Showing 1–3 of 3 results for author: He, X Y

Parallel field magnetoresistance in topological insulator thin films

Authors: C. J. Lin, X. Y. He, J. Liao, X. X. Wang, V. Sacksteder IV, W. M. Yang, T. Guan, Q. M. Zhang, L. Gu, G. Y. Zhang, C. G. Zeng, X. Dai, K. H. Wu, Y. Q. Li

Abstract: We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi2Se3 and (Bi,Sb)2Te3 thin films are compared with existing theoretical models of parallel field magnetotransport. We conclude that the TI thin films bring parallel field transport into… ▽ More We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi2Se3 and (Bi,Sb)2Te3 thin films are compared with existing theoretical models of parallel field magnetotransport. We conclude that the TI thin films bring parallel field transport into a unique regime in which the coupling of surface states to bulk and to opposite surfaces is indispensable for understanding the observed MR. The β parameter extracted from parallel field MR can in principle provide a figure of merit for searching TI compounds with more insulating bulk than existing materials. △ Less

Submitted 27 July, 2013; originally announced July 2013.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 88, 041307(R) (2013)

Local photocurrent generation in thin films of the topological insulator Bi2Se3

Authors: C. Kastl, T. Guan, X. Y. He, K. H. Wu, Y. Q. Li, A. W. Holleitner

Abstract: We report on the optoelectronic properties of thin films of Bi2Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitude. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits… ▽ More We report on the optoelectronic properties of thin films of Bi2Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitude. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits. We interpret the patterns to originate from a local photocurrent generation due to potential fluctuations. △ Less

Submitted 17 October, 2012; originally announced October 2012.

Journal ref: Appl. Phys. Lett. 101, 251110 (2012)

Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport

Authors: J. Chen, X. Y. He, K. H. Wu, Z. Q. Ji, L. Lu, J. R. Shi, J. H. Smet, Y. Q. Li

Abstract: We demonstrate that the weak antilocalization effect can serve as a convenient method for detecting decoupled surface transport in topological insulator thin films. In the regime where a bulk Fermi surface coexists with the surface states, the low field magnetoconductivity is described well by the Hikami-Larkin-Nagaoka equation for single component transport of non-interacting electrons. When the… ▽ More We demonstrate that the weak antilocalization effect can serve as a convenient method for detecting decoupled surface transport in topological insulator thin films. In the regime where a bulk Fermi surface coexists with the surface states, the low field magnetoconductivity is described well by the Hikami-Larkin-Nagaoka equation for single component transport of non-interacting electrons. When the electron density is lowered, the magnetotransport behavior deviates from the single component description and strong evidence is found for independent conducting channels at the bottom and top surfaces. The magnetic-field-dependent part of corrections to conductivity due to the Zeeman energy is shown to be negligible despite non-negligible electron-electron interactions. △ Less

Submitted 27 April, 2011; v1 submitted 5 April, 2011; originally announced April 2011.

Comments: 5 pages, 3 figures. For comments and questions, please contact: [email protected]

Journal ref: Phys. Rev. B 83, 241304(R) (2011)