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Inducing superconductivity in quantum anomalous Hall regime
Authors:
Yu Huang,
Yu Fu,
Peng Zhang,
Kang L. Wang,
Qing Lin He
Abstract:
Interfacing the quantum anomalous Hall insulator with a conventional superconductor is known to be a promising manner for realizing a topological superconductor, which has been continuously pursued for years. Such a proximity route depends to a great extent on the control of the delicate interfacial coupling of the two constituents. However, a recent experiment reported the failure to reproduce su…
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Interfacing the quantum anomalous Hall insulator with a conventional superconductor is known to be a promising manner for realizing a topological superconductor, which has been continuously pursued for years. Such a proximity route depends to a great extent on the control of the delicate interfacial coupling of the two constituents. However, a recent experiment reported the failure to reproduce such a topological superconductor, which is ascribed to the negligence of the electrical short by the superconductor in the theoretical proposal. Here, we reproduce this topological superconductor with attention to the interface control. The resulted conductance matrix under a wide magnetic field range agrees with the fingerprint of this topological superconductor. This allows us to develop a phase diagram that unveils three regions parameterized by various coupling limits, which not only supports the feasibility to fabricate the topological superconductor by proximity but also fully explains the origin of the previous debate. The present work provides a comprehensible guide on fabricating the topological superconductor.
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Submitted 2 July, 2024;
originally announced July 2024.
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Topological Hall effect at above room temperature in heterostructures composed of a magnetic insulator and a heavy metal
Authors:
Qiming Shao,
Yawen Liu,
Guoqiang Yu,
Se Kwon Kim,
Xiaoyu Che,
Chi Tang,
Qing Lin He,
Yaroslav Tserkovnyak,
**g Shi,
Kang L. Wang
Abstract:
Non-volatile memory and computing technology rely on efficient read and write of ultra-tiny information carriers that do not wear out. Magnetic skyrmions are emerging as a potential carrier since they are topologically robust nanoscale spin textures that can be manipulated with ultralow current density. To date, most of skyrmions are reported in metallic films, which suffer from additional Ohmic l…
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Non-volatile memory and computing technology rely on efficient read and write of ultra-tiny information carriers that do not wear out. Magnetic skyrmions are emerging as a potential carrier since they are topologically robust nanoscale spin textures that can be manipulated with ultralow current density. To date, most of skyrmions are reported in metallic films, which suffer from additional Ohmic loss and thus high energy dissipation. Therefore, skyrmions in magnetic insulators are of technological importance for low-power information processing applications due to their low dam** and the absence of Ohmic loss. Moreover, they attract fundamental interest in studying various magnon-skyrmion interactions11. Skyrmions have been observed in one insulating material Cu2OSeO3 at cryogenic temperatures, where they are stabilized by bulk Dzyaloshinskii-Moriya interaction. Here, we report the observation of magnetic skyrmions that survive above room temperature in magnetic insulator/heavy metal heterostructures, i.e., thulium iron garnet/platinum. The presence of these skyrmions results from the Dzyaloshinskii-Moriya interaction at the interface and is identified by the emergent topological Hall effect. Through tuning the magnetic anisotropy via varying temperature, we observe skyrmions in a large window of external magnetic field and enhanced stability of skyrmions in the easy-plane anisotropy regime. Our results will help create a new platform for insulating skyrmion-based room temperature low dissipation spintronic applications.
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Submitted 15 April, 2019;
originally announced April 2019.
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Exploring interfacial exchange coupling and sublattice effect in heavy metal/ferrimagnetic insulator heterostructures using Hall measurements, x-ray magnetic circular dichroism, and neutron reflectometry
Authors:
Qiming Shao,
Alexander Grutter,
Yawen Liu,
Guoqiang Yu,
Chao-Yao Yang,
Dustin A. Gilbert,
Elke Arenholz,
Padraic Shafer,
Xiaoyu Che,
Chi Tang,
Mohammed Aldosary,
Aryan Navabi,
Qing Lin He,
Brian J. Kirby,
**g Shi,
Kang L. Wang
Abstract:
We use temperature-dependent Hall measurements to identify contributions of spin Hall, magnetic proximity, and sublattice effects to the anomalous Hall signal in heavy metal/ferrimagnetic insulator heterostructures with perpendicular magnetic anisotropy. This approach enables detection of both the magnetic proximity effect onset temperature and the magnetization compensation temperature and provid…
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We use temperature-dependent Hall measurements to identify contributions of spin Hall, magnetic proximity, and sublattice effects to the anomalous Hall signal in heavy metal/ferrimagnetic insulator heterostructures with perpendicular magnetic anisotropy. This approach enables detection of both the magnetic proximity effect onset temperature and the magnetization compensation temperature and provides essential information regarding the interfacial exchange coupling. Onset of a magnetic proximity effect yields a local extremum in the temperature-dependent anomalous Hall signal, which occurs at higher temperature as magnetic insulator thickness increases. This magnetic proximity effect onset occurs at much higher temperature in Pt than W. The magnetization compensation point is identified by a sharp anomalous Hall sign change and divergent coercive field. We directly probe the magnetic proximity effect using x-ray magnetic circular dichroism and polarized neutron reflectometry, which reveal an antiferromagnetic coupling between W and the magnetic insulator. Finally, we summarize the exchange-coupling configurations and the anomalous Hall-effect sign of the magnetized heavy metal in various heavy metal/magnetic insulator heterostructures.
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Submitted 26 February, 2019; v1 submitted 20 November, 2018;
originally announced November 2018.
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Spectroscopic Fingerprint of Chiral Majorana Modes at the Edge of a Quantum Anomalous Hall Insulator / Superconductor Heterostructure
Authors:
J. Shen,
J. Lyu,
J. Z. Gao,
Y. -M. Xie,
C. -Z. Chen,
C. -w. Cho,
O. Atanov,
Z. Chen,
K. Liu,
Y. J. Hu,
K. Y. Yip,
S. K. Goh,
Q. L. He,
L. Pan,
K. L. Wang,
K. T. Law,
R. Lortz
Abstract:
With the recent discovery of the quantum anomalous Hall insulator (QAHI), which exhibits the conductive quantum Hall edge states without external magnetic field, it becomes possible to create a novel topological superconductor (SC) by introducing superconductivity into these edge states. In this case, two distinct topological superconducting phases with one or two chiral Majorana edge modes were t…
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With the recent discovery of the quantum anomalous Hall insulator (QAHI), which exhibits the conductive quantum Hall edge states without external magnetic field, it becomes possible to create a novel topological superconductor (SC) by introducing superconductivity into these edge states. In this case, two distinct topological superconducting phases with one or two chiral Majorana edge modes were theoretically predicted, characterized by Chern numbers (N ) of 1 and 2, respectively. We present spectroscopic evidence from Andreev reflection experiments for the presence of chiral Majorana modes in a Nb / (Cr0.12Bi0.26Sb0.62)2Te3 heterostructure with distinct signatures attributed to two different topological superconducting phases. The results are in qualitatively good agreement with the theoretical predictions.
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Submitted 31 October, 2019; v1 submitted 12 September, 2018;
originally announced September 2018.
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Role of dimensional crossover on spin-orbit torque efficiency in magnetic insulator thin films
Authors:
Qiming Shao,
Chi Tang,
Guoqiang Yu,
Aryan Navabi,
Hao Wu,
Congli He,
Junxue Li,
Pramey Upadhyaya,
Peng Zhang,
Seyed Armin Razavi,
Qing Lin He,
Yawen Liu,
Pei Yang,
Se Kwon Kim,
Cheng Zheng,
Yizhou Liu,
Lei Pan,
Roger Lake,
Xiufeng Han,
Yaroslav Tserkovnyak,
**g Shi,
Kang L. Wang
Abstract:
Magnetic insulators (MIs) attract tremendous interest for spintronic applications due to low Gilbert dam** and absence of Ohmic loss. Magnetic order of MIs can be manipulated and even switched by spin-orbit torques (SOTs) generated through spin Hall effect and Rashba-Edelstein effect in heavy metal/MI bilayers. SOTs on MIs are more intriguing than magnetic metals since SOTs cannot be transferred…
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Magnetic insulators (MIs) attract tremendous interest for spintronic applications due to low Gilbert dam** and absence of Ohmic loss. Magnetic order of MIs can be manipulated and even switched by spin-orbit torques (SOTs) generated through spin Hall effect and Rashba-Edelstein effect in heavy metal/MI bilayers. SOTs on MIs are more intriguing than magnetic metals since SOTs cannot be transferred to MIs through direct injection of electron spins. Understanding of SOTs on MIs remains elusive, especially how SOTs scale with the film thickness. Here, we observe the critical role of dimensionality on the SOT efficiency by systematically studying the MI layer thickness dependent SOT efficiency in tungsten/thulium iron garnet (W/TmIG) bilayers. We first show that the TmIG thin film evolves from two-dimensional to three-dimensional magnetic phase transitions as the thickness increases, due to the suppression of long-wavelength thermal fluctuation. Then, we report the significant enhancement of the measured SOT efficiency as the thickness increases. We attribute this effect to the increase of the magnetic moment density in concert with the suppression of thermal fluctuations. At last, we demonstrate the current-induced SOT switching in the W/TmIG bilayers with a TmIG thickness up to 15 nm. The switching current density is comparable with those of heavy metal/ferromagnetic metal cases. Our findings shed light on the understanding of SOTs in MIs, which is important for the future development of ultrathin MI-based low-power spintronics.
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Submitted 29 January, 2018; v1 submitted 24 August, 2017;
originally announced August 2017.
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Topological transitions induced by antiferromagnetism in a thin-film topological insulator
Authors:
Qing Lin He,
Gen Yin,
Luyan Yu,
Alexander J. Grutter,
Lei Pan,
Xufeng Kou,
Xiaoyu Che,
Guoqiang Yu,
Tianxiao Nie,
Bin Zhang,
Qiming Shao,
Koichi Murata,
Xiaodan Zhu,
Yabin Fan,
Xiaodong Han,
Brian J. Kirby,
Kang L. Wang
Abstract:
Ferromagnetism in topological insulators (TIs) opens a topologically non-trivial exchange band gap, providing an exciting platform to manipulate the topological order through an external magnetic field. Here, we experimentally show that the surface of an antiferromagnetic thin film can independently control the topological order of the top and the bottom surface states of a TI thin film through pr…
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Ferromagnetism in topological insulators (TIs) opens a topologically non-trivial exchange band gap, providing an exciting platform to manipulate the topological order through an external magnetic field. Here, we experimentally show that the surface of an antiferromagnetic thin film can independently control the topological order of the top and the bottom surface states of a TI thin film through proximity couplings. During the magnetization reversal in a field scan, two intermediate spin configurations stem from unsynchronized magnetic switchings of the top and the bottom AFM/TI interfaces. These magnetic configurations are shown to result in new topological phases with non-zero Chern numbers for each surface, introducing two counter-propagating chiral edge modes inside the exchange gap. This change in the number of transport channels, as the result of the topological transitions, induces antisymmetric magneto-resistance spikes during the magnetization reversal. With the high Neel ordering temperature provided by the antiferromagnetic layers, the signature of the induced topological transition persists in transport measurements up to a temperature of around 90 K, a factor of three over the Curie temperature in a typical magnetically doped TI thin film.
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Submitted 5 December, 2016;
originally announced December 2016.
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Chiral Majorana edge state in a quantum anomalous Hall insulator-superconductor structure
Authors:
Qing Lin He,
Lei Pan,
Alexander L. Stern,
Edward Burks,
Xiaoyu Che,
Gen Yin,
**g Wang,
Biao Lian,
Quan Zhou,
Eun Sang Choi,
Koichi Murata,
Xufeng Kou,
Tianxiao Nie,
Qiming Shao,
Yabin Fan,
Shou-Cheng Zhang,
Kai Liu,
**g Xia,
Kang L. Wang
Abstract:
After the recognition of the possibility to implement Majorana fermions using the building blocks of solid-state matters, the detection of this peculiar particle has been an intense focus of research. Here we experimentally demonstrate a collection of Majorana fermions living in a one-dimensional transport channel at the boundary of a superconducting quantum anomalous Hall insulator thin film. A s…
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After the recognition of the possibility to implement Majorana fermions using the building blocks of solid-state matters, the detection of this peculiar particle has been an intense focus of research. Here we experimentally demonstrate a collection of Majorana fermions living in a one-dimensional transport channel at the boundary of a superconducting quantum anomalous Hall insulator thin film. A series of topological phase changes are controlled by the reversal of the magnetization, where a half-integer quantized conductance plateau (0.5e2/h) is observed as a clear signature of the Majorana phase. This transport signature can be well repeated during many magnetic reversal sweeps, and can be tracked at different temperatures, providing a promising evidence of the chiral Majorana edge modes in the system.
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Submitted 17 June, 2016;
originally announced June 2016.
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Robust two-dimensional superconductivity and vortex system in Bi2Te3/FeTe heterostructures
Authors:
Hong-Chao Liu,
Hui Li,
Qing Lin He,
Iam Keong Sou,
Swee K. Goh,
Jiannong Wang
Abstract:
The discovery of two-dimensional superconductivity in Bi2Te3/FeTe heterostructure provides a new platform for the search of Majorana fermions in condensed matter systems. Since Majorana fermions are expected to reside at the core of the vortices, a close examination of the vortex dynamics in superconducting interface is of paramount importance. Here, we report the robustness of the interfacial sup…
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The discovery of two-dimensional superconductivity in Bi2Te3/FeTe heterostructure provides a new platform for the search of Majorana fermions in condensed matter systems. Since Majorana fermions are expected to reside at the core of the vortices, a close examination of the vortex dynamics in superconducting interface is of paramount importance. Here, we report the robustness of the interfacial superconductivity and 2D vortex dynamics in four as-grown and aged Bi2Te3/FeTe heterostructure with different Bi2Te3 epilayer thickness (3, 5, 7, 14 nm). After two years' air exposure, superconductivity remains robust even when the thickness of Bi2Te3 epilayer is down to 3 nm. Meanwhile, a new feature at ~13 K is induced in the aged samples, and the high field studies reveal its relevance to superconductivity. The resistance of all as-grown and aged heterostructures, just below the superconducting transition temperature follows the Arrhenius relation, indicating the thermally activated flux flow behavior at the interface of Bi2Te3 and FeTe. Moreover, the activation energy exhibits a logarithmic dependence on the magnetic field, providing a compelling evidence for the 2D vortex dynamics in this novel system. The weak disorder associated with aging-induced Te vacancies is possibly responsible for these observed phenomena.
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Submitted 19 May, 2016;
originally announced May 2016.
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Tailoring Exchange Couplings in Magnetic Topological Insulator/Antiferromagnet Heterostructures
Authors:
Qing Lin He,
Xufeng Kou,
Alexander J. Grutter,
Lei Pan,
Xiaoyu Che,
Yuxiang Liu,
Tianxiao Nie,
Steven M. Disseler,
Brian J. Kirby,
William Ratcliff II,
Qiming Shao,
Koichi Murata,
Yabin Fan,
Mohammad Montazeri,
Julie A. Borchers,
Kang L. Wang
Abstract:
Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures with Néel order in an antiferromagnetic CrSb and magnetic topological order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineeri…
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Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures with Néel order in an antiferromagnetic CrSb and magnetic topological order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineering. Through deliberate geometrical design of heterostructures and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the magnetic properties of the topological surface massive Dirac fermions. This work provides a new framework on integrating topological insulators with antiferromagnetic materials and unveils new avenues towards dissipationless topological antiferromagnetic spintronics.
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Submitted 16 May, 2016;
originally announced May 2016.
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Large-area epitaxial growth of MoSe2 via an incandescent molybdenum source
Authors:
Man-Kit Cheng,
**g Liang,
Ying-Hoi Lai,
Liang-Xi Pang,
Yi Liu,
Junying Shen,
Jianqiang Hou,
Qing Lin He,
Bochao Xu,
Junshu Chen,
Gan Wang,
Chang Liu,
Rolf Lortz,
Iam-Keong Sou
Abstract:
We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were characterized using transmission electron microscopy, energy dispersive X-ray spectroscopy, atomic force microscopy, Raman spectroscopy, photoluminescence, reflection high energy electron diffraction (RHEED) and angular resolved photoemission spectroscopy (ARP…
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We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were characterized using transmission electron microscopy, energy dispersive X-ray spectroscopy, atomic force microscopy, Raman spectroscopy, photoluminescence, reflection high energy electron diffraction (RHEED) and angular resolved photoemission spectroscopy (ARPES). A new Raman characteristic peak at 1591 cm-1 was identified. Results from Raman spectroscopy, photoluminescence, RHEED and ARPES studies consistently reveal that large-area single crystalline mono-layer of MoSe2 could be achieved by this technique. This technique enjoys several advantages over conventional approaches and could be extended to the growth of other two-dimensional layered materials containing a low-vapor-pressure element.
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Submitted 15 June, 2017; v1 submitted 9 September, 2015;
originally announced September 2015.
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Tunable interaction-induced localization of surface electrons in antidot nanostructured Bi2Te3 thin films
Authors:
Hong-Chao Liu,
Hai-Zhou Lu,
Hong-Tao He,
Baikui Li,
Shi-Guang Liu,
Qing Lin He,
Gan Wang,
Iam Keong Sou,
Shun-Qing Shen,
Jiannong Wang
Abstract:
Recently, a logarithmic decrease of conductivity has been observed in topological insulators at low temperatures, implying a tendency of localization of surface electrons. Here, we report quantum transport experiments on the topological insulator Bi2Te3 thin films with arrayed antidot nanostructures. With increasing density of the antidots, a systematic decrease is observed in the slope of the log…
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Recently, a logarithmic decrease of conductivity has been observed in topological insulators at low temperatures, implying a tendency of localization of surface electrons. Here, we report quantum transport experiments on the topological insulator Bi2Te3 thin films with arrayed antidot nanostructures. With increasing density of the antidots, a systematic decrease is observed in the slope of the logarithmic temperature-dependent conductivity curves, indicating the electron-electron interaction can be tuned by the antidots. Meanwhile, the weak anti-localization effect revealed in magnetoconductivity exhibits an enhanced dominance of electron-electron interaction among decoherence mechanisms. The observation can be understood from an antidot-induced reduction of the effective dielectric constant, which controls the interactions between the surface electrons. Our results clarify the indispensable role of the electron-electron interaction in the localization of surface electrons and indicate the localization of surface electrons in an interacting topological insulator.
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Submitted 8 October, 2014;
originally announced October 2014.
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Large gap, a pseudogap and proximity effect in the Bi2Te3/Fe1+yTe interfacial superconductor
Authors:
M. Q. He,
Q. L. He,
J. Y. Shen,
H. C. Liu,
Y. Zheng,
C. H. Wong,
Q. H. Chen,
J. N. Wang,
K. T. Law,
I. K. Sou,
A. P. Petrovic,
R. Lortz
Abstract:
We report directional point-contact spectroscopy data on the novel Bi2Te3/Fe1+yTe interfacial superconductor for a Bi2Te3 thickness of 9 quintuple layers, bonded by van der Waals epitaxy to a Fe1+yTe film at an atomically sharp interface. Our data show a very large superconducting twin-gap structure with an energy scale exceeding that of bulk FeSe or FeSe1-xTex by a factor of 4. While the larger g…
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We report directional point-contact spectroscopy data on the novel Bi2Te3/Fe1+yTe interfacial superconductor for a Bi2Te3 thickness of 9 quintuple layers, bonded by van der Waals epitaxy to a Fe1+yTe film at an atomically sharp interface. Our data show a very large superconducting twin-gap structure with an energy scale exceeding that of bulk FeSe or FeSe1-xTex by a factor of 4. While the larger gap is isotropic and attributed to a thin FeTe layer in proximity of the interface, the smaller gap has a pronounced anisotropy and is associated with proximity-induced superconductivity in the topological insulator Bi2Te3. Zero resistance is lost above 8 K, but superconducting fluctuations are visible up to at least 12 K and the large gap is replaced by a pseudogap that persists up to 40 K. The spectra show a pronounced zero-bias conductance peak in the superconducting state, which may be a signature of an unconventional pairing mechanism.
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Submitted 29 October, 2014; v1 submitted 22 July, 2014;
originally announced July 2014.
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Two-dimensional superconductivity at the interface of a Bi2Te3/FeTe heterostructure
Authors:
Qing Lin He,
Hongchao Liu,
Mingquan He,
Ying Hoi Lai,
Hongtao He,
Gan Wang,
Kam Tuen Law,
Rolf Lortz,
Jiannong Wang,
Iam Keong Sou
Abstract:
Superconductivity at the interface of a heterostructure confined to nanometer-sized scale offers unique opportunities to study the exotic physics of two-dimensional superconductivity. The realization of superconductivity at the interface between a topological insulator and an iron-chalcogenide compound is highly attractive for exploring several recent theoretical predictions involving these two ne…
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Superconductivity at the interface of a heterostructure confined to nanometer-sized scale offers unique opportunities to study the exotic physics of two-dimensional superconductivity. The realization of superconductivity at the interface between a topological insulator and an iron-chalcogenide compound is highly attractive for exploring several recent theoretical predictions involving these two new classes of materials. Here, we report transport measurements on a Bi2Te3/FeTe heterostructure fabricated via van der Waals epitaxy, which demonstrate superconductivity at the interface induced by the Bi2Te3 epilayer with thickness even down to one quintuple layer. The two-dimensional nature of the observed superconductivity with the highest transition temperature around 12 K was verified by the existence of a Berezinsky-Kosterlitz-Thouless transition and the diverging ratio of in-plane to out-plane upper critical field on approaching the superconducting transition temperature. With the combination of interface superconductivity and Dirac surface states of Bi2Te3, the heterostructure studied in this work provides a novel platform for realizing Majorana fermions.
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Submitted 21 April, 2014; v1 submitted 24 September, 2013;
originally announced September 2013.
