Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots
Authors:
Robert R. Hayes,
Andrey A. Kiselev,
Matthew G. Borselli,
Steven S. Bui,
Edward T. Croke III,
Peter W. Deelman,
Brett M. Maune,
Ivan Milosavljevic,
Jeong-Sun Moon,
Richard S. Ross,
Adele E. Schmitz,
Mark F. Gyure,
Andrew T. Hunter
Abstract:
We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Using a new step-and-reach technique, we have experimentally verified the g-value of 2.0 +/- 0.1 for the observed Zeeman doublet. We have also measured T1 of single- and multi-electron spins in InGaAs quantum dots. The l…
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We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Using a new step-and-reach technique, we have experimentally verified the g-value of 2.0 +/- 0.1 for the observed Zeeman doublet. We have also measured T1 of single- and multi-electron spins in InGaAs quantum dots. The lifetimes of the Si/SiGe system are appreciably longer than those for InGaAs dots for comparable magnetic field strengths, but both approach one second at sufficiently low fields (< 1 T for Si, and < 0.2 T for InGaAs).
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Submitted 2 August, 2009;
originally announced August 2009.
