High-Fidelity Bell-State Preparation with $^{40}$Ca$^+$ Optical Qubits
Authors:
Craig R. Clark,
Holly N. Tinkey,
Brian C. Sawyer,
Adam M. Meier,
Karl A. Burkhardt,
Christopher M. Seck,
Christopher M. Shappert,
Nicholas D. Guise,
Curtis E. Volin,
Spencer D. Fallek,
Harley T. Hayden,
Wade G. Rellergert,
Kenton R. Brown
Abstract:
Entanglement generation in trapped-ion systems has relied thus far on two distinct but related geometric phase gate techniques: Molmer-Sorensen and light-shift gates. We recently proposed a variant of the light-shift scheme where the qubit levels are separated by an optical frequency [B. C. Sawyer and K. R. Brown, Phys. Rev. A 103, 022427 (2021)]. Here we report an experimental demonstration of th…
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Entanglement generation in trapped-ion systems has relied thus far on two distinct but related geometric phase gate techniques: Molmer-Sorensen and light-shift gates. We recently proposed a variant of the light-shift scheme where the qubit levels are separated by an optical frequency [B. C. Sawyer and K. R. Brown, Phys. Rev. A 103, 022427 (2021)]. Here we report an experimental demonstration of this entangling gate using a pair of $^{40}$Ca$^+$ ions in a cryogenic surface-electrode ion trap and a commercial, high-power, 532 nm Nd:YAG laser. Generating a Bell state in 35 $μ$s, we directly measure an infidelity of $6(3) \times 10^{-4}$ without subtraction of experimental errors. The 532 nm gate laser wavelength suppresses intrinsic photon scattering error to $\sim 1 \times 10^{-5}$.
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Submitted 18 October, 2021; v1 submitted 12 May, 2021;
originally announced May 2021.
Single-ion addressing via trap potential modulation in global optical fields
Authors:
Christopher M. Seck,
Adam M. Meier,
J. True Merrill,
Harley T. Hayden,
Brian C. Sawyer,
Curtis E. Volin,
Kenton R. Brown
Abstract:
To date, individual addressing of ion qubits has relied primarily on local Rabi or transition frequency differences between ions created via electromagnetic field spatial gradients or via ion transport operations. Alternatively, it is possible to synthesize arbitrary local one-qubit gates by leveraging local phase differences in a global driving field. Here we report individual addressing of…
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To date, individual addressing of ion qubits has relied primarily on local Rabi or transition frequency differences between ions created via electromagnetic field spatial gradients or via ion transport operations. Alternatively, it is possible to synthesize arbitrary local one-qubit gates by leveraging local phase differences in a global driving field. Here we report individual addressing of $^{40}$Ca$^+$ ions in a two-ion crystal using axial potential modulation in a global gate laser field. We characterize the resulting gate performance via one-qubit randomized benchmarking, applying different random sequences to each co-trapped ion. We identify the primary error sources and compare the results with single-ion experiments to better understand our experimental limitations. These experiments form a foundation for the universal control of two ions, confined in the same potential well, with a single gate laser beam.
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Submitted 10 February, 2020; v1 submitted 11 November, 2019;
originally announced November 2019.
