-
High-Mobility Bismuth-based Transparent P-Type Oxide from High-throughput Material Screening
Authors:
Amit Bathia,
Geoffroy Hautier,
Tan Nilgianskul,
Anna Miglio,
Gian-Marco Rignanese,
Xavier Gonze,
** Suntivich
Abstract:
Transparent oxides are essential building blocks to many technologies, ranging from components in transparent electronics, transparent conductors, to absorbers and protection layers in photovoltaics and photoelectrochemical devices. However, thus far, it has been difficult to develop p-type oxides with wide band gap and high hole mobility; current state-of-art transparent p-type oxides have hole m…
▽ More
Transparent oxides are essential building blocks to many technologies, ranging from components in transparent electronics, transparent conductors, to absorbers and protection layers in photovoltaics and photoelectrochemical devices. However, thus far, it has been difficult to develop p-type oxides with wide band gap and high hole mobility; current state-of-art transparent p-type oxides have hole mobility in the range of < 10 cm$^2$/Vs, much lower than their n-type counterparts. Using high-throughput computational screening to guide the discovery of novel oxides with wide band gap and high hole mobility, we report the computational identification and the experimental verification of a bismuth-based double-perovskite oxide that meets these requirements. Our identified candidate, Ba$_2$BiTaO$_6$, has an optical band gap larger than 4 eV and a Hall hole mobility above 30 cm$^2$/Vs. We rationalize this finding with molecular orbital intuitions; Bi$^{3+}$ with filled s-orbitals strongly overlap with the oxygen p, increasing the extent of the metal-oxygen covalency and effectively reducing the valence effective mass, while Ta$^{5+}$ forms a conduction band with low electronegativity, leading to a high band gap beyond the visible range. Our concerted theory-experiment effort points to the growing utility of a data-driven materials discovery and the combination of both informatics and chemical intuitions as a way to discover future technological materials.
△ Less
Submitted 14 December, 2014;
originally announced December 2014.
-
Low-Dimensional Transport and Large Thermoelectric Power Factors in Bulk Semiconductors by Band Engineering of Highly Directional Electronic States
Authors:
Daniel I. Bilc,
Geoffroy Hautier,
David Waroquiers,
Gian-Marco Rignanese,
Philippe Ghosez
Abstract:
Thermoelectrics are promising to address energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanost…
▽ More
Thermoelectrics are promising to address energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanostructures or the introduction of resonant states were suggested as possible solutions to this paradox but with limited success. Here, we propose an original approach to fulfill both requirements in bulk semiconductors. It exploits the highly-directional character of some orbitals to engineer the band-structure and produce a type of low-dimensional transport similar to that targeted in nanostructures, while retaining isotropic properties. Using first-principles calculations, the theoretical concept is demonstrated in Fe$_2$YZ Heusler compounds, yielding power factors 4-5 times larger than in classical thermoelectrics at room temperature. Our findings are totally generic and rationalize the search of alternative compounds with a similar behavior. Beyond thermoelectricity, these might be relevant also in the context of electronic, superconducting or photovoltaic applications.
△ Less
Submitted 2 April, 2015; v1 submitted 19 May, 2014;
originally announced May 2014.
-
Accuracy of generalized gradient approximation functionals for density functional perturbation theory calculations
Authors:
Lianhua He,
Fang Liu,
Geoffroy Hautier,
Micael J. T. Oliveira,
Miguel A. L. Marques,
Fernando D. Vila,
J. J. Rehr,
G. -M. Rignanese,
Aihui Zhou
Abstract:
We assess the validity of various exchange-correlation functionals for computing the structural, vibrational, dielectric, and thermodynamical properties of materials in the framework of density-functional perturbation theory (DFPT). We consider five generalized-gradient approximation (GGA) functionals (PBE, PBEsol, WC, AM05, and HTBS) as well as the local density approximation (LDA) functional. We…
▽ More
We assess the validity of various exchange-correlation functionals for computing the structural, vibrational, dielectric, and thermodynamical properties of materials in the framework of density-functional perturbation theory (DFPT). We consider five generalized-gradient approximation (GGA) functionals (PBE, PBEsol, WC, AM05, and HTBS) as well as the local density approximation (LDA) functional. We investigate a wide variety of materials including a semiconductor (silicon), a metal (copper), and various insulators (SiO$_2$ $α$-quartz and stishovite, ZrSiO$_4$ zircon, and MgO periclase). For the structural properties, we find that PBEsol and WC are the closest to the experiments and AM05 performs only slightly worse. All three functionals actually improve over LDA and PBE in contrast with HTBS, which is shown to fail dramatically for $α$-quartz. For the vibrational and thermodynamical properties, LDA performs surprisingly very good. In the majority of the test cases, it outperforms PBE significantly and also the WC, PBEsol and AM05 functionals though by a smaller margin (and to the detriment of structural parameters). On the other hand, HTBS performs also poorly for vibrational quantities. For the dielectric properties, none of the functionals can be put forward. They all (i) fail to reproduce the electronic dielectric constant due to the well-known band gap problem and (ii) tend to overestimate the oscillator strengths (and hence the static dielectric constant).
△ Less
Submitted 18 September, 2013;
originally announced September 2013.
-
High-Throughput Screening of Perovskite Alloys for Piezoelectric Performance and Formability
Authors:
Rickard Armiento,
Boris Kozinsky,
Geoffroy Hautier,
Marco Fornari,
Gerbrand Ceder
Abstract:
We screen a large chemical space of perovskite alloys for systems with the right properties to accommodate a morphotropic phase boundary (MPB) in their composition-temperature phase diagram, a crucial feature for high piezoelectric performance. We start from alloy end-points previously identified in a high-throughput computational search. An interpolation scheme is used to estimate the relative en…
▽ More
We screen a large chemical space of perovskite alloys for systems with the right properties to accommodate a morphotropic phase boundary (MPB) in their composition-temperature phase diagram, a crucial feature for high piezoelectric performance. We start from alloy end-points previously identified in a high-throughput computational search. An interpolation scheme is used to estimate the relative energies between different perovskite distortions for alloy compositions with a minimum of computational effort. Suggested alloys are further screened for thermodynamic stability. The screening identifies alloy systems already known to host a MPB, and suggests a few new ones that may be promising candidates for future experiments. Our method of investigation may be extended to other perovskite systems, e.g., (oxy-)nitrides, and provides a useful methodology for any application of high-throughput screening of isovalent alloy systems.
△ Less
Submitted 6 September, 2013;
originally announced September 2013.
-
Low Hole Effective Mass p-type Transparent Conducting Oxides: Identification and Design Principles
Authors:
Geoffroy Hautier,
Anna Miglio,
Gerbrand Ceder,
Gian-Marco Rignanese,
Xavier Gonze
Abstract:
The development of high performance transparent conducting oxides (TCOs) is critical to many technologies from transparent electronics to solar cells. While n-type TCOs are present in many devices, current p-type TCOs are not largely commercialized as they exhibit much lower carrier mobilities, due to the large hole effective masses of most oxides. Here, we conduct a high-throughput computational…
▽ More
The development of high performance transparent conducting oxides (TCOs) is critical to many technologies from transparent electronics to solar cells. While n-type TCOs are present in many devices, current p-type TCOs are not largely commercialized as they exhibit much lower carrier mobilities, due to the large hole effective masses of most oxides. Here, we conduct a high-throughput computational search on thousands of binary and ternary oxides and identify several highly promising compounds displaying exceptionally low hole effective masses (up to an order of magnitude lower than state of the art p-type TCOs) as well as wide band gaps. In addition to the discovery of specific compounds, the chemical rationalization of our findings opens new directions, beyond current Cu-based chemistries, for the design and development of future p-type TCOs.
△ Less
Submitted 22 April, 2013;
originally announced April 2013.
