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Crystallographic dependence of Field Evaporation Energy Barrier in metals using Field Evaporation Energy Loss Spectroscopy map**
Authors:
François Vurpillot,
Constantinos Hatzoglou,
Benjamin Klaes,
Loic Rousseau,
Jean-Baptiste Maillet,
Ivan Blum,
Baptiste Gault,
Alfred Cerezo
Abstract:
Atom probe tomography data is composed of a list of coordinates of the reconstructed atoms in the probed volume. The elemental identity of each atom is derived from time-of-flight mass spectrometry, with no local energetic or chemical information readily available within the mass spectrum. Here, we used a new data processing technique referred to as field evaporation energy loss spectroscopy (FEEL…
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Atom probe tomography data is composed of a list of coordinates of the reconstructed atoms in the probed volume. The elemental identity of each atom is derived from time-of-flight mass spectrometry, with no local energetic or chemical information readily available within the mass spectrum. Here, we used a new data processing technique referred to as field evaporation energy loss spectroscopy (FEELS), which analyses the tails of mass peaks. FEELS was used to extract critical energetic parameters that characterize the field evaporation process, which are related to the binding energy of atoms to the surface under intense electrostatic field and dependent of the path followed by the departing atoms during the field evaporation process. We focused our study on different pure face centered cubic metals (Al, Ni, Rh). We demonstrate that the energetic parameters extracted from mass spectra can be mapped in 2D with nanometric resolution. A dependence on the considered crystallographic planes is observed, with sets of planes of low Miller indices showing a lower sensitivity to the intensity of the electric field, which indicates a lower effective attachment energy. The temperature is also an important parameter in particular for Al, which we attribute to an energetic transition between two paths of field evaporation between 25K and 60K close to (002) pole at the specimen's surface. This paper shows that the complex information that can be retrieved from the measured energy loss of surface atoms is important both instrumentally and fundamentally.
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Submitted 3 April, 2024;
originally announced April 2024.
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3D oxygen vacancy order and defect-property relations in multiferroic (LuFeO$_3$)$_9$/(LuFe$_2$O$_4$)$_1$ superlattices
Authors:
K. A. Hunnestad,
H. Das,
C. Hatzoglou,
M. Holtz,
C. M. Brooks,
A. T. J. van Helvoort,
D. A. Muller,
D. G. Schlom,
J. A. Mundy,
D. Meier
Abstract:
Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO$_3$)$_n$/(SrTiO$_3$)$_n$ superlattices. Although it is clear that variations in oxygen content are crucial for the electronic correlation phenomena in oxides, it remains a major challenge to quantify their impact. Her…
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Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO$_3$)$_n$/(SrTiO$_3$)$_n$ superlattices. Although it is clear that variations in oxygen content are crucial for the electronic correlation phenomena in oxides, it remains a major challenge to quantify their impact. Here, we measure the chemical composition in multiferroic (LuFeO$_3$)$_9$/(LuFe$_2$O$_4$)$_1$ superlattices, revealing a one-to-one correlation between the distribution of oxygen vacancies and the electric and magnetic properties. Using atom probe tomography, we observe oxygen vacancies arranging in a layered three-dimensional structure with a local density on the order of 10$^{14}$ cm$^{-2}$, congruent with the formula-unit-thick ferrimagnetic LuFe$_2$O$_4$ layers. The vacancy order is promoted by the locally reduced formation energy and plays a key role in stabilizing the ferroelectric domains and ferrimagnetism in the LuFeO$_3$ and LuFe$_2$O$_4$ layers, respectively. The results demonstrate the importance of oxygen vacancies for the room-temperature multiferroicity in this system and establish an approach for quantifying the oxygen defects with atomic-scale precision in 3D, giving new opportunities for deterministic defect-enabled property control in oxide heterostructures.
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Submitted 30 June, 2023;
originally announced July 2023.
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Optimizing compositional and atomic-level information of oxides in atom probe tomography
Authors:
Kasper Hunnestad,
Constantinos Hatzoglou,
Francois Vurpillot,
Inger-Emma Nylund,
Zewu Yan,
Edith Bourret,
Antonius. T. J. van Helvoort,
Dennis Meier
Abstract:
Atom probe tomography (APT) is a 3D analysis technique that offers unique chemical accuracy and sensitivity with sub-nanometer spatial resolution. Recently, there is an increasing interest in the application of APT to complex oxides materials, giving new insight into the relation between local variations in chemical composition and emergent physical properties. However, in contrast to the field of…
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Atom probe tomography (APT) is a 3D analysis technique that offers unique chemical accuracy and sensitivity with sub-nanometer spatial resolution. Recently, there is an increasing interest in the application of APT to complex oxides materials, giving new insight into the relation between local variations in chemical composition and emergent physical properties. However, in contrast to the field of metallurgy, where APT is routinely applied to study materials at the atomic level, complex oxides and their specific field evaporation mechanisms are much less explored. Here, we perform APT measurements on the hexagonal manganite ErMnO3 and systematically study the effect of different experimental parameters on the measured composition and atomic structure. We demonstrate that both the mass resolving power (MRP) and compositional accuracy can be improved by increasing the charge-state ratio (CSR) working at low laser energy (< 5 pJ). Furthermore, we observe a substantial preferential retention of Er atoms, which is suppressed at higher CSRs. We explain our findings based on fundamental field evaporation concepts, expanding the knowledge about the impact of key experimental parameters and the field evaporation process in complex oxides in general.
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Submitted 28 March, 2023;
originally announced March 2023.
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Quantitative 3D map** of chemical defects at charged grain boundaries in a ferroelectric oxide
Authors:
K. A. Hunnestad,
J. Schultheiß,
A. C. Mathisen,
I. Ushakov,
C. Hatzoglou,
A. T. J. van Helvoort,
D. Meier
Abstract:
Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. Related effects have been intensively studied in epitaxial systems, including ferroelectric domain walls and interfaces in superlattices. Here, we investigate the relation between polar discontinuities and the local chemistry at grain boundaries in polycrystalline fe…
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Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. Related effects have been intensively studied in epitaxial systems, including ferroelectric domain walls and interfaces in superlattices. Here, we investigate the relation between polar discontinuities and the local chemistry at grain boundaries in polycrystalline ferroelectric ErMnO3. Using orientation map** and different scanning probe microscopy techniques, we demonstrate that the polycrystalline material develops charged grain boundaries with enhanced electronic conductance. By performing atom probe tomography measurements, we find an enrichment of erbium and a depletion of oxygen at all grain boundaries. The observed compositional changes translate into a charge that exceeds possible polarization-driven effects, demonstrating that structural phenomena rather than electrostatics determine the local chemical composition and related changes in the electronic transport behavior. The study shows that the charged grain boundaries behave distinctly different from charged domain walls, giving additional opportunities for property engineering at polar oxide interfaces.
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Submitted 23 March, 2023; v1 submitted 15 December, 2022;
originally announced December 2022.
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Atomic-scale 3D imaging of individual dopant atoms in a complex oxide
Authors:
K. A. Hunnestad,
C. Hatzoglou,
Z. M. Khalid,
P. E. Vullum,
Z. Yan,
E. Bourret,
A. T. J. van Helvoort,
S. M. Selbach,
D. Meier
Abstract:
A small percentage of dopant atoms can completely change the physical properties of the host material. For example, chemical do** controls the electronic transport behavior of semiconductors and gives rise to a wide range of emergent electric and magnetic phenomena in oxides. Imaging of individual dopant atoms in lightly doped systems, however, remains a major challenge, hindering characterizati…
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A small percentage of dopant atoms can completely change the physical properties of the host material. For example, chemical do** controls the electronic transport behavior of semiconductors and gives rise to a wide range of emergent electric and magnetic phenomena in oxides. Imaging of individual dopant atoms in lightly doped systems, however, remains a major challenge, hindering characterization of the site-specific effects and local dopant concentrations that determine the atomic-scale physics. Here, we apply atom-probe tomography (APT) to resolve individual Ti atoms in the narrow band gap semiconductor ErMnO3 with a nominal proportion of 0.04 atomic percent. Our 3D imaging measures the Ti concentration at the unit cell level, providing quantitative information about the dopant distribution within the ErMnO3 crystal lattice. High-resolution APT maps reveal the 3D lattice position of individual Ti atoms, showing that they are located within the Mn layers with no signs of clustering or other chemical inhomogeneities. The 3D atomic-scale visualization of individual dopant atoms provides new opportunities for the study of local structure-property relations in complex oxides, representing an important step toward controlling dopant-driven quantum phenomena in next-generation oxide electronics.
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Submitted 30 October, 2021;
originally announced November 2021.
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Characterization of Pd and Pd@Au core-shell nanoparticles using atom probe tomography and field evaporation simulation
Authors:
Se-Ho Kim,
Kyuseon Jang,
Phil Woong Kang,
Jae-Pyoung Ahn,
Jae-Bok Seol,
Chang-Min Kwak,
Constantinos Hatzoglou,
Francois Vurpillot,
Pyuck-Pa Choi
Abstract:
We report on atom probe tomography analyses of Pd and Pd@Au nanoparticles embedded in a Ni matrix and the effects of local evaporation field variations on the atom probe data. In order to assess the integrity of the reconstructed atom maps, we performed numerical simulations of the field evaporation processes and compared the simulated datasets with experimentally acquired data. The distortions se…
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We report on atom probe tomography analyses of Pd and Pd@Au nanoparticles embedded in a Ni matrix and the effects of local evaporation field variations on the atom probe data. In order to assess the integrity of the reconstructed atom maps, we performed numerical simulations of the field evaporation processes and compared the simulated datasets with experimentally acquired data. The distortions seen in the atom maps for both Pd and Pd@Au nanoparticles could be mostly ascribed to local variations in chemical composition and elemental evaporation fields. The evaporation field values for Pd and Ni, taken from the image hump model and assumed in the simulations, yielded a good agreement between experimental and simulation results. In contrast, the evaporation field for Au, as predicted from the image hump model, appeared to be substantially overestimated and resulted in a large discrepancy between experiments and simulations.
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Submitted 10 February, 2021;
originally announced February 2021.
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Preferential evaporation in atom probe tomography: an analytical approach
Authors:
Constantinos Hatzoglou,
Solène Rouland,
Bertrand Radiguet,
Auriane Etienne,
Gérald da Costa,
Xavier Sauvage,
Philippe Pareige,
François Vurpillot
Abstract:
Atom probe tomography (APT) analysis conditions play a major role in the composition measurement accuracy. Preferential evaporation, which significantly biases apparent composition, more than other well-known phenomena in APT, is strongly connected to those analysis conditions. One way to optimize them, in order to have the most accurate measurement, is therefore to be able to predict and then to…
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Atom probe tomography (APT) analysis conditions play a major role in the composition measurement accuracy. Preferential evaporation, which significantly biases apparent composition, more than other well-known phenomena in APT, is strongly connected to those analysis conditions. One way to optimize them, in order to have the most accurate measurement, is therefore to be able to predict and then to estimate their influence on the apparent composition. An analytical model is proposed to quantify the preferential evaporation. This model is applied to three different alloys: NiCu, FeCrNi and FeCu. The model explains not only the analysis temperature dependence, as in already existing model, but also the dependence to the pulse fraction and the pulse frequency. Moreover, the model can also provide energetic constant directly linked to energy barrier, required to field evaporate atom from the sample surface. 2
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Submitted 20 August, 2020;
originally announced August 2020.
