Chloride Molecular Do** Technique on 2D Materials: WS2 and MoS2
Authors:
Lingming Yang,
Kausik Majumdar,
Han Liu,
Yuchen Du,
Heng Wu,
Michael Hatzistergos,
P. Y. Hung,
Robert Tieckelmann,
Wilman Tsai,
Chris Hobbs,
Peide D. Ye
Abstract:
Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular do** technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After do**, the Rc of WS2 and MoS2 have been decreased to 0.7 kohm*um and 0.5 kohm*um, respectively. The significant r…
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Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular do** technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After do**, the Rc of WS2 and MoS2 have been decreased to 0.7 kohm*um and 0.5 kohm*um, respectively. The significant reduction of the Rc is attributed to the achieved high electron do** density thus significant reduction of Schottky barrier width. As a proof-ofconcept, high-performance few-layer WS2 field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 uA/um, an on/off ratio of 4*106, and a peak field-effect mobility of 60 cm2/V*s. This do** technique provides a highly viable route to diminish the Rc in TMDs, paving the way for high-performance 2D nano-electronic devices.
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Submitted 9 October, 2014;
originally announced October 2014.
High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Do**: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain Current (460 uA/um)
Authors:
Lingming Yang,
Kausik Majumdar,
Yuchen Du,
Han Liu,
Heng Wu,
Michael Hatzistergos,
Py Hung,
Robert Tieckelmann,
Wilman Tsai,
Chris Hobbs,
Peide D. Ye
Abstract:
In this paper, we report a novel chemical do** technique to reduce the contact resistance (Rc) of transition metal dichalcogenides (TMDs) - eliminating two major roadblocks (namely, do** and high Rc) towards demonstration of high-performance TMDs field-effect transistors (FETs). By using 1,2 dichloroethane (DCE) as the do** reagent, we demonstrate an active n-type do** density > 2*1019 cm-…
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In this paper, we report a novel chemical do** technique to reduce the contact resistance (Rc) of transition metal dichalcogenides (TMDs) - eliminating two major roadblocks (namely, do** and high Rc) towards demonstration of high-performance TMDs field-effect transistors (FETs). By using 1,2 dichloroethane (DCE) as the do** reagent, we demonstrate an active n-type do** density > 2*1019 cm-3 in a few-layer MoS2 film. This enabled us to reduce the Rc value to a record low number of 0.5 kohm*um, which is ~10x lower than the control sample without do**. The corresponding specific contact resistivity (pc) is found to decrease by two orders of magnitude. With such low Rc, we demonstrate 100 nm channel length (Lch) MoS2 FET with a drain current (Ids) of 460 uA/um at Vds = 1.6 V, which is twice the best value reported so far on MoS2 FETs.
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Submitted 17 June, 2014;
originally announced June 2014.
