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Kerr nonlinearity and parametric amplification with an Al-InAs superconductor-semiconductor Josephson junction
Authors:
Z. Hao,
T. Shaw,
M. Hatefipour,
W. M. Strickland,
B. H. Elfeky,
D. Langone,
J. Shabani,
S. Shankar
Abstract:
Nearly quantum limited Josephson parametric amplifiers (JPAs) are essential components in superconducting quantum circuits. However, higher order nonlinearities of the Josephson cosine potential are known to cause gain compression, therefore limiting scalability. In an effort to reduce the fourth order, or Kerr nonlinearity, we realize a parametric amplifier with an Al-InAs superconductor-semicond…
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Nearly quantum limited Josephson parametric amplifiers (JPAs) are essential components in superconducting quantum circuits. However, higher order nonlinearities of the Josephson cosine potential are known to cause gain compression, therefore limiting scalability. In an effort to reduce the fourth order, or Kerr nonlinearity, we realize a parametric amplifier with an Al-InAs superconductor-semiconductor hybrid Josephson junction (JJ). We extract the Kerr nonlinearity of the Al-InAs JJ from two different devices and show that it is three orders of magnitude lower compared to an Al-$\text{AlO}_\text{X}$ junction with identical Josephson inductance. We then demonstrate a four-wave-mixing (4WM) parametric amplifier made with an Al-InAs junction that achieves more than 20 dB of gain and -119 dBm of compression power, that outperforms single resonant JPAs based on Al junctions.
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Submitted 22 February, 2024; v1 submitted 16 February, 2024;
originally announced February 2024.
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Characterizing losses in InAs two-dimensional electron gas-based gatemon qubits
Authors:
William M. Strickland,
Lukas J. Baker,
Jaewoo Lee,
Krishna Dindial,
Bassel Heiba Elfeky,
Patrick J. Strohbeen,
Mehdi Hatefipour,
Peng Yu,
Ido Levy,
Jacob Issokson,
Vladimir E. Manucharyan,
Javad Shabani
Abstract:
The tunnelling of cooper pairs across a Josephson junction (JJ) allow for the nonlinear inductance necessary to construct superconducting qubits, amplifiers, and various other quantum circuits. An alternative approach using hybrid superconductor-semiconductor JJs can enable superconducting qubit architectures with all electric control. Here we present continuous-wave and time-domain characterizati…
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The tunnelling of cooper pairs across a Josephson junction (JJ) allow for the nonlinear inductance necessary to construct superconducting qubits, amplifiers, and various other quantum circuits. An alternative approach using hybrid superconductor-semiconductor JJs can enable superconducting qubit architectures with all electric control. Here we present continuous-wave and time-domain characterization of gatemon qubits and coplanar waveguide resonators based on an InAs two-dimensional electron gas. We show that the qubit undergoes a vacuum Rabi splitting with a readout cavity and we drive coherent Rabi oscillations between the qubit ground and first excited states. We measure qubit relaxation times to be $T_1 =$ 100 ns over a 1.5 GHz tunable band. We detail the loss mechanisms present in these materials through a systematic study of the quality factors of coplanar waveguide resonators. While various loss mechanisms are present in III-V gatemon circuits we detail future directions in enhancing the relaxation times of qubit devices on this platform.
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Submitted 20 February, 2024; v1 submitted 29 September, 2023;
originally announced September 2023.
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Andreev reflection of quantum Hall states through a quantum point contact
Authors:
Mehdi Hatefipour,
Joseph J. Cuozzo,
Ido Levy,
William M. Strickland,
Dylan Langone,
Enrico Rossi,
Javad Shabani
Abstract:
We investigate the interplay between the quantum Hall (QH) effect and superconductivity in InAs surface quantum well (SQW)/NbTiN heterostructures using a quantum point contact (QPC). We use QPC to control the proximity of the edge states to the superconductor. By measuring the upstream and downstream resistances of the device, we investigate the efficiency of Andreev conversion at the InAs/NbTiN i…
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We investigate the interplay between the quantum Hall (QH) effect and superconductivity in InAs surface quantum well (SQW)/NbTiN heterostructures using a quantum point contact (QPC). We use QPC to control the proximity of the edge states to the superconductor. By measuring the upstream and downstream resistances of the device, we investigate the efficiency of Andreev conversion at the InAs/NbTiN interface. Our experimental data is analyzed using the Landauer-Buttiker formalism, generalized to allow for Andreev reflection processes. We show that by varying the voltage of the QPC, $V_{QPC}$, the average Andreev reflection, $A$, at the QH-SC interface can be tuned from 50% to 10%. The evolution of $A$ with $V_{QPC}$ extracted from the measurements exhibits plateaus separated by regions for which $A$ varies continuously with $V_{QPC}$. The presence of plateaus suggests that for some ranges of $V_{QPC}$ the QPC might be pinching off almost completely from the QH-SC interface some of the edge modes. Our work shows a new experimental setup to control and advance the understanding of the complex interplay between superconductivity and QH effect in two-dimensional electron gas systems.
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Submitted 20 September, 2023; v1 submitted 4 September, 2023;
originally announced September 2023.
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The study of contact properties in edge-contacted graphene-aluminum Josephson junctions
Authors:
Zhujun Huang,
Neda Lotfizadeh,
Bassel H. Elfeky,
Kim Kisslinger,
Edoardo Cuniberto,
Peng Yu,
Mehdi Hatefipour,
Takashi Taniguchi,
Kenji Watanabe,
Javad Shabani,
Davood Shahrjerdi
Abstract:
Transparent contact interfaces in superconductor-graphene hybrid systems are critical for realizing superconducting quantum applications. Here, we examine the effect of the edge-contact fabrication process on the transparency of the superconducting aluminum-graphene junction. We show significant improvement in the transparency of our superconductor-graphene junctions by promoting the chemical comp…
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Transparent contact interfaces in superconductor-graphene hybrid systems are critical for realizing superconducting quantum applications. Here, we examine the effect of the edge-contact fabrication process on the transparency of the superconducting aluminum-graphene junction. We show significant improvement in the transparency of our superconductor-graphene junctions by promoting the chemical component of the edge contact etch process. Our results compare favorably with state-of-the-art graphene Josephson junctions. The findings of our study contribute to advancing the fabrication knowledge of edge-contacted superconductor-graphene junctions.
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Submitted 5 December, 2022;
originally announced December 2022.
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Magneto-anisotropic weak antilocalization in near-surface quantum wells
Authors:
S. M. Farzaneh,
Mehdi Hatefipour,
William F. Schiela,
Neda Lotfizadeh,
Peng Yu,
Bassel Heiba Elfeky,
William M. Strickland,
Alex Matos-Abiague,
Javad Shabani
Abstract:
We investigate the effects of an in-plane magnetic field on the weak antilocalization signature of near-surface quantum wells lacking bulk and inversion symmetry. The measured magnetoconductivity exhibits a strong anisotropy with respect to the direction of the in-plane magnetic field. The two-fold symmetry of the observed magneto-anisotropy originates from the competition between Rashba and Dress…
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We investigate the effects of an in-plane magnetic field on the weak antilocalization signature of near-surface quantum wells lacking bulk and inversion symmetry. The measured magnetoconductivity exhibits a strong anisotropy with respect to the direction of the in-plane magnetic field. The two-fold symmetry of the observed magneto-anisotropy originates from the competition between Rashba and Dresselhaus spin-orbit couplings. The high sensitivity of the weak antilocalization to the spin texture produced by the combined Zeeman and spin-orbit fields results in very large anisotropy ratios, reaching 100%. Using a semiclassical universal model in quantitative agreement with the experimental data, we uniquely determine the values of the Dresselhaus and Rashba parameters as well as the effective in-plane g-factor of the electrons. Understanding these parameters provides new prospects for novel applications ranging from spintronics to topological quantum computing.
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Submitted 14 November, 2022; v1 submitted 11 August, 2022;
originally announced August 2022.
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Controlling Fermi level pinning in near-surface InAs quantum wells
Authors:
William M. Strickland,
Mehdi Hatefipour,
Dylan Langone,
S. M. Farzaneh,
Javad Shabani
Abstract:
Hybrid superconductor-semiconductor heterostructures are a promising platform for quantum devices based on mesoscopic and topological superconductivity. In these structures, a semiconductor must be in close proximity to a superconductor and form an ohmic contact. This can be accommodated in narrow band gap semiconductors such as InAs, where the surface Fermi level is positioned close to the conduc…
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Hybrid superconductor-semiconductor heterostructures are a promising platform for quantum devices based on mesoscopic and topological superconductivity. In these structures, a semiconductor must be in close proximity to a superconductor and form an ohmic contact. This can be accommodated in narrow band gap semiconductors such as InAs, where the surface Fermi level is positioned close to the conduction band. In this work, we study the structural properties of near-surface InAs quantum wells and find that surface morphology is closely connected to low-temperature transport, where electron mobility is highly sensitive to the growth temperature of the underlying graded buffer layer. By introducing an In$_{0.81}$Al$_{0.19}$As cap** layer, we show that we can modify the surface Fermi level pinning within the first nanometer of the In$_{0.81}$Al$_{0.19}$As thin film. Experimental measurements show a strong agreement with Schrödinger-Poisson calculations of the electron density, suggesting the conduction band energy of the In$_{0.81}$Ga$_{0.19}$As and In$_{0.81}$Al$_{0.19}$As surface is pinned to \SI{40}{\milli eV} and \SI{309}{\milli eV} above the Fermi level respectively.
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Submitted 2 June, 2022;
originally announced June 2022.
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Coexistence of superconductivity and weak anti-localization at KTaO3 (111) interfaces
Authors:
Athby H. Al-Tawhid,
Jesse Kanter,
Mehdi Hatefipour,
Divine P. Kumah,
Javad Shabani,
Kaveh Ahadi
Abstract:
The intersection of two-dimensional superconductivity and topologically nontrivial states hosts a wide range of quantum phenomena, including Majorana fermions. Coexistence of topologically nontrivial states and superconductivity in a single material, however, remains elusive. Here, we report on the observation of two-dimensional superconductivity and weak anti-localization at the TiOx/KTaO3(111) i…
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The intersection of two-dimensional superconductivity and topologically nontrivial states hosts a wide range of quantum phenomena, including Majorana fermions. Coexistence of topologically nontrivial states and superconductivity in a single material, however, remains elusive. Here, we report on the observation of two-dimensional superconductivity and weak anti-localization at the TiOx/KTaO3(111) interfaces. A remnant, saturating resistance persists below the transition temperature as superconducting puddles fail to reach phase coherence. Signatures of weak anti-localization are observed below the superconducting transition, suggesting the coexistence of superconductivity and weak anti-localization. The superconducting interfaces show roughly one order of magnitude larger weak anti-localization correction, compared to non-superconducting interfaces, alluding to a relatively large coherence length in these interfaces.
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Submitted 20 September, 2021;
originally announced September 2021.
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Oxygen vacancy-induced anomalous Hall effect in a nominally non-magnetic oxide
Authors:
Athby H. Al-Tawhid,
Jesse Kanter,
Mehdi Hatefipour,
Douglas L. Irving,
Divine P. Kumah,
Javad Shabani,
Kaveh Ahadi
Abstract:
The anomalous Hall effect, a hallmark of broken time-reversal symmetry and spin-orbit coupling, is frequently observed in magnetically polarized systems. Its realization in non-magnetic systems, however, remains elusive. Here, we report on the observation of anomalous Hall effect in nominally non-magnetic KTaO3. Anomalous Hall effect emerges in reduced KTaO3 and shows an extrinsic to intrinsic cro…
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The anomalous Hall effect, a hallmark of broken time-reversal symmetry and spin-orbit coupling, is frequently observed in magnetically polarized systems. Its realization in non-magnetic systems, however, remains elusive. Here, we report on the observation of anomalous Hall effect in nominally non-magnetic KTaO3. Anomalous Hall effect emerges in reduced KTaO3 and shows an extrinsic to intrinsic crossover. A paramagnetic behavior is observed in reduced samples using first principles calculations and quantitative magnetometry. The observed anomalous Hall effect follows the oxygen vacancy-induced magnetization response, suggesting that the localized magnetic moments of the oxygen vacancies scatter conduction electrons asymmetrically and give rise to anomalous Hall effect. The anomalous Hall conductivity becomes insensitive to scattering rate in the low temperature limit (T<5 K), implying that the Berry curvature of the electrons on the Fermi surface controls the anomalous Hall effect. Our observations describe a detailed picture of many-body interactions, triggering anomalous Hall effect in a non-magnetic system.
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Submitted 27 December, 2022; v1 submitted 16 September, 2021;
originally announced September 2021.
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Induced superconducting pairing in integer quantum Hall edge states
Authors:
Mehdi Hatefipour,
Joseph J. Cuozzo,
Jesse Kanter,
William Strickland,
Christopher R. Allemang,
Tzu-Ming Lu,
Enrico Rossi,
Javad Shabani
Abstract:
Indium Arsenide (InAs) near surface quantum wells (QWs) are promising for the fabrication of semiconductor-superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum well and the ones in the superconductor. In this work we present results for InAs QWs in the quantum Hall regime placed in proximity of superconducting NbTiN. We…
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Indium Arsenide (InAs) near surface quantum wells (QWs) are promising for the fabrication of semiconductor-superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum well and the ones in the superconductor. In this work we present results for InAs QWs in the quantum Hall regime placed in proximity of superconducting NbTiN. We observe a negative downstream resistance with a corresponding reduction of Hall (upstream) resistance, consistent with a very high Andreev conversion. We analyze the experimental data using the Landauer-Büttiker formalism, generalized to allow for Andreev reflection processes. We attribute the high efficiency of Andreev conversion in our devices to the large transparency of the InAs/NbTiN interface and the consequent strong hybridization of the QH edge modes with the states in the superconductor.
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Submitted 6 April, 2022; v1 submitted 19 August, 2021;
originally announced August 2021.
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Local Control of Supercurrent Density in Epitaxial Planar Josephson Junctions
Authors:
Bassel H. Elfeky,
Neda Lotfizadeh,
William F. Schiela,
William M. Strickland,
Matthieu Dartiailh,
Kasra Sardashti,
Mehdi Hatefipour,
Peng Yu,
Natalia Pankratova,
Hanho Lee,
Vladimir E. Manucharyan,
Javad Shabani
Abstract:
The critical current response to an applied out-of-plane magnetic field in a Josephson junction provides insight into the uniformity of its current distribution. In Josephson junctions with semiconducting weak links, the carrier density and, therefore the overall current distribution could be modified electrostatically via metallic gates. Here, we show local control of the current distribution in…
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The critical current response to an applied out-of-plane magnetic field in a Josephson junction provides insight into the uniformity of its current distribution. In Josephson junctions with semiconducting weak links, the carrier density and, therefore the overall current distribution could be modified electrostatically via metallic gates. Here, we show local control of the current distribution in an epitaxial Al-InAs Josephson junction equipped with five mini-gates. We demonstrate that not only can the junction width be electrostatically defined but also we can locally adjust the current profile to form superconducting quantum interference devices. Our studies show enhanced edge conduction in such long junctions, which can be eliminated by mini-gates to create a uniform current distribution.
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Submitted 19 July, 2021; v1 submitted 16 July, 2021;
originally announced July 2021.
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Detecting induced $p \pm ip$ pairing at the Al-InAs interface with a quantum microwave circuit
Authors:
D. Phan,
J. Senior,
A. Ghazaryan,
M. Hatefipour,
W. M. Strickland,
J. Shabani,
M. Serbyn,
A. P. Higginbotham
Abstract:
Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a strong fingerprint from the two-component nature of…
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Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a strong fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband $p \pm i p$ pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to magnetic field. Separately resolving the Al and InAs contributions allows us to determine the carrier density and mobility in the InAs.
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Submitted 11 May, 2022; v1 submitted 8 July, 2021;
originally announced July 2021.
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Epitaxial Superconductor-Semiconductor Two-Dimensional Systems for Superconducting Quantum Circuits
Authors:
Joseph O'Connell Yuan,
Kaushini S. Wickramasinghe,
William M. Strickland,
Matthieu C. Dartiailh,
Kasra Sardashti,
Mehdi Hatefipour,
Javad Shabani
Abstract:
Qubits on solid state devices could potentially provide the rapid control necessary for develo** scalable quantum information processors. Materials innovation and design breakthroughs have increased functionality and coherence of qubits substantially over the past two decades. Here we show by improving interface between InAs as a semiconductor and Al as a superconductor, one can reliably fabrica…
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Qubits on solid state devices could potentially provide the rapid control necessary for develo** scalable quantum information processors. Materials innovation and design breakthroughs have increased functionality and coherence of qubits substantially over the past two decades. Here we show by improving interface between InAs as a semiconductor and Al as a superconductor, one can reliably fabricate voltage-controlled Josephson junction field effect transistor (JJ-FET) that can be used as tunable qubits, resonators, and coupler switches. We find that band gap engineering is crucial in realizing a two-dimensional electron gas near the surface. In addition, we show how the coupling between the semiconductor layer and the superconducting contacts can affect qubit properties. We present the anharmonicity and coupling strengths from one and two-photon absorption in a quantum two level system fabricated with a JJ-FET.
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Submitted 26 March, 2021;
originally announced April 2021.
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Tailoring Superconducting Phases Observed in Hyperdoped Si:Ga for Cryogenic Circuit Applications
Authors:
K. Sardashti,
T. Nguyen,
M. Hatefipour,
W. L. Sarney,
J. Yuan,
W. Mayer,
K. Kisslinger,
J. Shabani
Abstract:
Hyperdo** with gallium (Ga) has been established as a route to observe superconductivity in silicon (Si). The relatively large critical temperatures (T$_{\rm c}$) and magnetic fields (B$_{\rm c}$) make this phase attractive for cryogenic circuit applications, particularly for scalable hybrid superconductor--semiconductor platforms. However, the robustness of Si:Ga superconductivity at millikelvi…
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Hyperdo** with gallium (Ga) has been established as a route to observe superconductivity in silicon (Si). The relatively large critical temperatures (T$_{\rm c}$) and magnetic fields (B$_{\rm c}$) make this phase attractive for cryogenic circuit applications, particularly for scalable hybrid superconductor--semiconductor platforms. However, the robustness of Si:Ga superconductivity at millikelvin temperatures is yet to be evaluated. Here, we report the presence of a reentrant resistive transition below T$_{\rm c}$ for Si:Ga whose strength strongly depends on the distribution of the Ga clusters that precipitate in the implanted Si after annealing. By monitoring the reentrant resistance over a wide parameter space of implantation energies and fluences, we determine conditions that significantly improve the coherent coupling of Ga clusters, therefore, eliminating the reentrant transition even at temperatures as low as 20~mK.
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Submitted 8 December, 2020;
originally announced December 2020.
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Observation of Distinct Superconducting Phases in Hyperdoped p-type Germanium
Authors:
Kasra Sardashti,
Tri D. Nguyen,
Wendy L. Sarney,
Asher C. Leff,
Mehdi Hatefipour,
Matthieu C. Dartiailh,
Joseph Yuan,
William Mayer,
Javad Shabani
Abstract:
Realization of superconductivity in Group IV semiconductors could have a strong impact in the direction quantum technologies will take in the future. Therefore, it is imperative to understand the nature of the superconducting phases in materials such as Silicon and Germanium. Here, we report systematic synthesis and characterization of superconducting phases in hyperdoped Germanium prepared by Gal…
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Realization of superconductivity in Group IV semiconductors could have a strong impact in the direction quantum technologies will take in the future. Therefore, it is imperative to understand the nature of the superconducting phases in materials such as Silicon and Germanium. Here, we report systematic synthesis and characterization of superconducting phases in hyperdoped Germanium prepared by Gallium ion implantation beyond its solubility limits. The resulting structural and physical characteristics have been tailored by changing the implantation energy and activation annealing temperature. Surprisingly, in addition to the poly-crystalline phase with weakly-coupled superconducting Ga clusters we find a nano-crystalline phase with quasi-2D characteristics consisting of a thin Ga film constrained near top surfaces. The new phase shows signatures of strong disorder such as anomalous B${\rm c}$ temperature dependence and crossings in magentoresistance isotherms. Apart from using hyperdoped Ge as a potential test-bed for studying signatures of quantum phase transitions (e.g. quantum Griffith singularity), our results suggest the possibility of integration of hyperdoped Ge nano-crystalline phase into superconducting circuits due to its 2D nature.
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Submitted 13 August, 2020;
originally announced August 2020.
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Experimental Measurements of Effective Mass in Near Surface InAs Quantum Wells
Authors:
Joseph Yuan,
Mehdi Hatefipour,
Brenden A. Magill,
William Mayer,
Matthieu C. Dartiailh,
Kasra Sardashti,
Kaushini S. Wickramasinghe,
Giti A. Khodaparast,
Yasuhiro H. Matsuda,
Yoshimitsu Kohama,
Zhuo Yang,
Sunil Thapa,
Christopher J. Stanton,
Javad Shabani
Abstract:
Near surface indium arsenide quantum wells have recently attracted a great deal of interest since they can be interfaced epitaxially with superconducting films and have proven to be a robust platform for exploring mesoscopic and topological superconductivity. In this work, we present magnetotransport properties of two-dimensional electron gases confined to an indium arsenide quantum well near the…
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Near surface indium arsenide quantum wells have recently attracted a great deal of interest since they can be interfaced epitaxially with superconducting films and have proven to be a robust platform for exploring mesoscopic and topological superconductivity. In this work, we present magnetotransport properties of two-dimensional electron gases confined to an indium arsenide quantum well near the surface. The electron mass extracted from the envelope of the Shubnikov-de Haas oscillations shows an average effective mass $m^{*}$ = 0.04 at low magnetic field. Complementary to our magnetotransport study, we employed cyclotron resonance measurements and extracted the electron effective mass in the ultra high magnetic field regime. Our measurements show that the effective mass depends on magnetic field in this regime. The data can be understood by considering a model that includes non-parabolicity of the indium arsenide conduction bands.
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Submitted 18 May, 2020; v1 submitted 6 November, 2019;
originally announced November 2019.
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Superconducting proximity effect in InAsSb surface quantum wells with in-situ Al contact
Authors:
William Mayer,
William F. Schiela,
Joseph Yuan,
Mehdi Hatefipour,
Wendy L. Sarney,
Stefan P. Svensson,
Asher C. Leff,
Tiago Campos,
Kaushini S. Wickramasinghe,
Matthieu C. Dartiailh,
Igor Zutic,
Javad Shabani
Abstract:
We demonstrate robust superconducting proximity effect in InAs$_{0.5}$Sb$_{0.5}$ quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs$_{0.5}$Sb$_{0.5}$ supports stronger spin-orbit coupling and larger $g$-factor. However, these potentially desirable prop…
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We demonstrate robust superconducting proximity effect in InAs$_{0.5}$Sb$_{0.5}$ quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs$_{0.5}$Sb$_{0.5}$ supports stronger spin-orbit coupling and larger $g$-factor. However, these potentially desirable properties have not been previously measured in epitaxial heterostructures with superconductors, which could serve as a platform for fault-tolerant topological quantum computing. Through structural and transport characterization we observe high-quality interfaces and strong spin-orbit coupling. We fabricate Josephson junctions based on InAs$_{0.5}$Sb$_{0.5}$ quantum wells and observe strong proximity effect. These junctions exhibit product of normal resistance and critical current, $I_{c}R_{N} = \SI{270}{\micro V}$, and excess current, $I_{ex}R_{N} = \SI{200}{\micro V}$ at contact separations of 500~nm. Both of these quantities demonstrate a robust and long-range proximity effect with highly-transparent contacts.
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Submitted 31 March, 2020; v1 submitted 27 September, 2019;
originally announced September 2019.
