-
Evidence for a direct band gap in the topological insulator Bi2Se3 from theory and experiment
Authors:
I. A. Nechaev,
R. C. Hatch,
M. Bianchi,
D. Guan,
C. Friedrich,
I. Aguilera,
J. L. Mi,
B. B. Iversen,
S. Blügel,
Ph. Hofmann,
E. V. Chulkov
Abstract:
Using angle-resolved photoelectron spectroscopy and ab-initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Gamma point. Experimentally, this is shown by a three-dimensional band map** in large fractions of the Brillouin zone. Theoretically, we demonstrate that the valence band maximum is located at…
▽ More
Using angle-resolved photoelectron spectroscopy and ab-initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Gamma point. Experimentally, this is shown by a three-dimensional band map** in large fractions of the Brillouin zone. Theoretically, we demonstrate that the valence band maximum is located at the Brillouin center only if many-body effects are included in the calculation. Otherwise, it is found in a high-symmetry mirror plane away from the zone center.
△ Less
Submitted 19 March, 2013; v1 submitted 16 October, 2012;
originally announced October 2012.
-
Robust Surface Do** of Bi$_2$Se$_3$ by Rb Intercalation
Authors:
Marco Bianchi,
Richard C. Hatch,
Zheshen Li,
Philip Hofmann,
Fei Song,
Jianli Mi,
Bo Brummerstedt Iversen,
Zakaria M. Abd El-Fattah,
Peter Löptien,
Lihui Zhou,
Alexander Ako Khajetoorians,
Jens Wiebe,
Roland Wiesendanger,
Justin Wells
Abstract:
Rubidium adsorption on the surface of the topological insulator Bi$_2$Se$_3$ is found to induce a strong downward band bending, leading to the appearance of a quantum-confined two dimensional electron gas states (2DEGs) in the conduction band. The 2DEGs shows a strong Rashba-type spin-orbit splitting, and it has previously been pointed out that this has relevance to nano-scale spintronics devices.…
▽ More
Rubidium adsorption on the surface of the topological insulator Bi$_2$Se$_3$ is found to induce a strong downward band bending, leading to the appearance of a quantum-confined two dimensional electron gas states (2DEGs) in the conduction band. The 2DEGs shows a strong Rashba-type spin-orbit splitting, and it has previously been pointed out that this has relevance to nano-scale spintronics devices. The adsorption of Rb atoms, on the other hand, renders the surface very reactive and exposure to oxygen leads to a rapid degrading of the 2DEGs. We show that intercalating the Rb atoms, presumably into the van der Waals gaps in the quintuple layer structure of Bi$_2$Se$_3$, drastically reduces the surface reactivity while not affecting the promising electronic structure. The intercalation process is observed above room temperature and accelerated with increasing initial Rb coverage, an effect that is ascribed to the Coulomb interaction between the charged Rb ions. Coulomb repulsion is also thought to be responsible for a uniform distribution of Rb on the surface.
△ Less
Submitted 2 August, 2012;
originally announced August 2012.
-
The electronic structure of clean and adsorbate-covered Bi2Se3: an angle-resolved photoemission study
Authors:
Marco Bianchi,
Richard C. Hatch,
Dandan Guan,
Tilo Planke,
Jianli Mi,
Bo Brummerstedt Iversen,
Philip Hofmann
Abstract:
Angle-resolved photoelectron spectroscopy is used for a detailed study of the electronic structure of the topological insulator Bi2Se3. Nominally stoichiometric and calcium-doped samples were investigated. The pristine surface shows the topological surface state in the bulk band gap. As time passes, the Dirac point moves to higher binding energies, indicating an increasingly strong downward bendin…
▽ More
Angle-resolved photoelectron spectroscopy is used for a detailed study of the electronic structure of the topological insulator Bi2Se3. Nominally stoichiometric and calcium-doped samples were investigated. The pristine surface shows the topological surface state in the bulk band gap. As time passes, the Dirac point moves to higher binding energies, indicating an increasingly strong downward bending of the bands near the surface. This time-dependent band bending is related to a contamination of the surface and can be accelerated by intentionally exposing the surface to carbon monoxide and other species. For a sufficiently strong band bending, additional states appear at the Fermi level. These are interpreted as quantised conduction band states. For large band bendings, these states are found to undergo a strong Rashba splitting. The formation of quantum well states is also observed for the valence band states. Different interpretations of similar data are also discussed.
△ Less
Submitted 7 June, 2012;
originally announced June 2012.
-
Molecular fingerprints in the electronic properties of crystalline organic semiconductors: from experiment to theory
Authors:
S. Ciuchi,
R. C. Hatch,
H. Höchst,
C. Faber,
X. Blase,
S. Fratini
Abstract:
By comparing photoemission spectroscopy with a non-perturbative dynamical mean field theory extension to many-body ab initio calculations, we show in the prominent case of pentacene crystals that an excellent agreement with experiment for the bandwidth, dispersion and lifetime of the hole carrier bands can be achieved in organic semiconductors provided that one properly accounts for the coupling t…
▽ More
By comparing photoemission spectroscopy with a non-perturbative dynamical mean field theory extension to many-body ab initio calculations, we show in the prominent case of pentacene crystals that an excellent agreement with experiment for the bandwidth, dispersion and lifetime of the hole carrier bands can be achieved in organic semiconductors provided that one properly accounts for the coupling to molecular vibrational modes and the presence of disorder. Our findings rationalize the growing experimental evidence that even the best band structure theories based on a many-body treatment of electronic interactions cannot reproduce the experimental photoemission data in this important class of materials.
△ Less
Submitted 6 June, 2012; v1 submitted 9 November, 2011;
originally announced November 2011.
-
Simultaneous quantization of bulk conduction and valence states through adsorption of nonmagnetic impurities on Bi2Se3
Authors:
Marco Bianchi,
Richard C. Hatch,
Jianli Mi,
Bo Brummerstedt Iversen,
Philip Hofmann
Abstract:
Exposing the (111) surface of the topological insulator Bi2Se3 to carbon monoxide results in strong shifts of the features observed in angle-resolved photoemission. The behavior is very similar to an often reported `aging' effect of the surface and it is concluded that this aging is most likely due to the adsorption of rest gas molecules. The spectral changes are also similar to those recently rep…
▽ More
Exposing the (111) surface of the topological insulator Bi2Se3 to carbon monoxide results in strong shifts of the features observed in angle-resolved photoemission. The behavior is very similar to an often reported `aging' effect of the surface and it is concluded that this aging is most likely due to the adsorption of rest gas molecules. The spectral changes are also similar to those recently reported in connection with the adsorption of the magnetic adatom Fe. All spectral changes can be explained by a simultaneous confinement of the conduction band and valence band states. This is only possible because of the unusual bulk electronic structure of Bi2Se3. The valence band quantization leads to spectral features which resemble those of a band gap opening at the Dirac point.
△ Less
Submitted 19 May, 2011;
originally announced May 2011.
-
Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering
Authors:
Richard C. Hatch,
Marco Bianchi,
Dandan Guan,
Shining Bao,
Jianli Mi,
Bo Brummerstedt Iversen,
Louis Nilsson,
Liv Hornekaer,
Philip Hofmann
Abstract:
The electron dynamics of the topological surface state on Bi2Se3(111) is investigated by temperature-dependent angle-resolved photoemission. The electron-phonon coupling strength is determined in a spectral region for which only intraband scattering involving the topological surface band is possible. The electron-phonon coupling constant is found to be lambda=0.25(5), more than an order of magnitu…
▽ More
The electron dynamics of the topological surface state on Bi2Se3(111) is investigated by temperature-dependent angle-resolved photoemission. The electron-phonon coupling strength is determined in a spectral region for which only intraband scattering involving the topological surface band is possible. The electron-phonon coupling constant is found to be lambda=0.25(5), more than an order of magnitude higher than the corresponding value for intraband scattering in the noble metal surface states. The stability of the topological state with respect to surface irregularities was also tested by introducing a small concentration of surface defects via ion bombardment. It is found that, in contrast to the bulk states, the topological state can no longer be observed in the photoemission spectra and this cannot merely be attributed to surface defect-induced momentum broadening.
△ Less
Submitted 26 April, 2011;
originally announced April 2011.
-
Large tuneable Rashba spin splitting of a two-dimensional electron gas in Bi2Se3
Authors:
P. D. C. King,
R. C. Hatch,
M. Bianchi,
R. Ovsyannikov,
C. Lupulescu,
G. Landolt,
B. Slomski,
J. H. Dil,
D. Guan,
J. L. Mi,
E. D. L. Rienks,
J. Fink,
A. Lindblad,
S. Svensson,
S. Bao,
G. Balakrishnan,
B. B. Iversen,
J. Osterwalder,
W. Eberhardt,
F. Baumberger,
Ph. Hofmann
Abstract:
We report a Rashba spin splitting of a two-dimensional electron gas in the topological insulator Bi$_2$Se$_3$ from angle-resolved photoemission spectroscopy. We further demonstrate its electrostatic control, and show that spin splittings can be achieved which are at least an order-of-magnitude larger than in other semiconductors. Together these results show promise for the miniaturization of spint…
▽ More
We report a Rashba spin splitting of a two-dimensional electron gas in the topological insulator Bi$_2$Se$_3$ from angle-resolved photoemission spectroscopy. We further demonstrate its electrostatic control, and show that spin splittings can be achieved which are at least an order-of-magnitude larger than in other semiconductors. Together these results show promise for the miniaturization of spintronic devices to the nanoscale and their operation at room temperature.
△ Less
Submitted 26 August, 2011; v1 submitted 16 March, 2011;
originally announced March 2011.
-
Electron-phonon coupling in crystalline Pentacene films
Authors:
Richard C. Hatch,
David L. Huber,
Hartmut Höchst
Abstract:
The electron-phonon(e-p) interaction in Pentacene (Pn) films grown on Bi(001) was investigated using photoemission spectroscopy. The spectra reveal thermal broadening from which we determine an e-p mass enhancement factor of lambda = 0.36 +/- 0.05 and an effective Einstein energy of omega_E = 11 +/- 4 meV. From omega_E it is inferred that dominant contributions to the e-p effects observed in ARP…
▽ More
The electron-phonon(e-p) interaction in Pentacene (Pn) films grown on Bi(001) was investigated using photoemission spectroscopy. The spectra reveal thermal broadening from which we determine an e-p mass enhancement factor of lambda = 0.36 +/- 0.05 and an effective Einstein energy of omega_E = 11 +/- 4 meV. From omega_E it is inferred that dominant contributions to the e-p effects observed in ARPES come from intermolecular vibrations. Based on the experimental data for lambda we extract an effective Peierls coupling value of g_eff = 0.55. The e-p coupling narrows the HOMO band width by 15 +/- 8% between 75K and 300K.
△ Less
Submitted 28 January, 2010; v1 submitted 28 August, 2009;
originally announced August 2009.
-
HOMO band structure and anisotropic effective hole mass in thin crystalline Pentacene films
Authors:
Richard C. Hatch,
David L. Huber,
Hartmut Hoechst
Abstract:
The band dispersion of the two highest occupied molecular orbital (HOMO)-derived bands in thin crystalline Pentacene films grown on Bi(001) was determined by photoemission spectroscopy. Compared to first-principles calculations our data show a significantly smaller band width and a much larger band separation indicating that the molecular interactions are weaker than predicted by theory--a direc…
▽ More
The band dispersion of the two highest occupied molecular orbital (HOMO)-derived bands in thin crystalline Pentacene films grown on Bi(001) was determined by photoemission spectroscopy. Compared to first-principles calculations our data show a significantly smaller band width and a much larger band separation indicating that the molecular interactions are weaker than predicted by theory--a direct contradiction to previous reports by Kakuta et al. [Phys. Rev. Lett. 98, 247601 (2007)]. The effective hole mass m* at M-bar is found to be anisotropic and larger than theoretically predicted. Comparison of m* to field effect mobility measurements shows that the band structure has a strong influence on the mobility even at room temperature where we estimate the scattering rate to be tau ~3 fs.
△ Less
Submitted 12 October, 2009; v1 submitted 29 July, 2009;
originally announced July 2009.
