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Energy Spectrum of Primary Knock-on Atoms and Atomic Displacement Calculations in Metallic Alloys Under Neutron Irradiation
Authors:
Faranak Hatami
Abstract:
Materials subjected to neutron irradiation experience damage due to displacement cascades triggered by nuclear reactions. This paper presents a practical method to calculate primary atomic recoil events (PKAs), which lead to cascade damage, based on energy and recoiling species. We developed a custom code to identify PKAs and extract their properties using MCNPX and SRIM. This code determines the…
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Materials subjected to neutron irradiation experience damage due to displacement cascades triggered by nuclear reactions. This paper presents a practical method to calculate primary atomic recoil events (PKAs), which lead to cascade damage, based on energy and recoiling species. We developed a custom code to identify PKAs and extract their properties using MCNPX and SRIM. This code determines the specifications of recoil atoms from the data provided by the PTRAC card in MCNPX. Consequently, the energy spectrum of PKAs generated through various reaction channels, including elastic/inelastic scattering and transmutations such as (n, α), (n, p), and (n, γ), is calculated. This PKA spectrum is then input into SRIM, which calculates the total number of atomic displacements using the binary collision approximation (BCA) and provides crucial information about the spatial distribution of defects within the irradiated material. Our results indicate that elastic scattering is the predominant reaction, producing most PKAs with energies in the range of several keV. In contrast, inelastic scattering becomes the dominant interaction for generating high-energy PKAs (~EPKA>1 MeV). Additionally, we observed that the number of Frenkel pairs versus ion energy curves for light particle ion implantation (such as H and He) is significantly smaller than for heavier ions.
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Submitted 12 June, 2024;
originally announced June 2024.
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Comparison of Different Machine Learning Approaches to Predict Viscosity of Tri-n-Butyl Phosphate Mixtures Using Experimental Data
Authors:
Faranak Hatami,
Mousa Moradi
Abstract:
Tri-n-butyl phosphate (TBP) is a solvent that is commonly used in a variety of industries, including the nuclear and chemical industries, for its ability to dissolve and purify various inorganic acids and metals. It is often used in hydrometallurgical processes to separate and purify these substances. Machine learning models offer a promising alternative to traditional methods for predicting the v…
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Tri-n-butyl phosphate (TBP) is a solvent that is commonly used in a variety of industries, including the nuclear and chemical industries, for its ability to dissolve and purify various inorganic acids and metals. It is often used in hydrometallurgical processes to separate and purify these substances. Machine learning models offer a promising alternative to traditional methods for predicting the viscosity of TBP mixtures. By training machine learning models on a dataset of viscosity measurements, it is possible to accurately predict the viscosity of TBP mixtures at different compositions, densities, and temperatures, which can save time and resources and reduce the risk of exposure to toxic solvents. This paper aimed at proposing Machine Learning (ML) techniques to automatically predict the viscosity of TBP mixtures using experimental data. For comparison peruses, we trained five different ML algorithms including Support Vector Regressor (SVR), Random Forest (RF), Logistic Regression (LR), Gradient Boosted Decision Trees (XGBoost), and Neural Network (NN). We collected a total of 511 measurements for TBP mixtures with temperature-based density, at different compositions, containing hexane, dodecane, cyclohexane, n-heptane, toluene, and ethylbenzene measured at temperatures of T= (288.15, 293.15, 298.15, 303.15, 308.15, 313.15, 318.15, 323.15, and 328.15) K. The results revealed that the NN model with 25 and 50 neurons in the hidden layers could achieve the best viscosity predictions for a system of TBP mixtures. The NN model outperformed other regular ML models in terms of Mean Square Error (MSE) of 0.157 % and adjusted R2 of 99.72 % on the test data set. This paper demonstrated that the NN model can be an appropriate option to accurately predict the viscosity of TBP + Ethylbenzene with a margin of deviation as low as 0.049 %.
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Submitted 4 November, 2023;
originally announced November 2023.
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Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer
Authors:
Srivatsa Chakravarthi,
Nicholas S. Yama,
Alex Abulnaga,
Ding Huang,
Christian Pederson,
Karine Hestroffer,
Fariba Hatami,
Nathalie P. de Leon,
Kai-Mei C. Fu
Abstract:
Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV)…
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Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stam** process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors ($Q$) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with $Q$ of 4100, we observe a three-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of $C = 2$. These results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.
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Submitted 13 December, 2022; v1 submitted 9 December, 2022;
originally announced December 2022.
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Triply-Resonant Sum Frequency Conversion with Gallium Phosphide Ring Resonators
Authors:
Alan D. Logan,
Shivangi Shree,
Srivatsa Chakravarthi,
Nicholas Yama,
Christian Pederson,
Karine Hestroffer,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
We demonstrate quasi-phase matched, triply-resonant sum frequency conversion in 10.6-um-diameter integrated gallium phosphide ring resonators. A small-signal, waveguide-to-waveguide power conversion efficiency of 8%/mW is measured for conversion from telecom (1536 nm) and near infrared (1117 nm) to visible (647 nm) wavelengths with an absolute power conversion efficiency of 6.3% measured at satura…
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We demonstrate quasi-phase matched, triply-resonant sum frequency conversion in 10.6-um-diameter integrated gallium phosphide ring resonators. A small-signal, waveguide-to-waveguide power conversion efficiency of 8%/mW is measured for conversion from telecom (1536 nm) and near infrared (1117 nm) to visible (647 nm) wavelengths with an absolute power conversion efficiency of 6.3% measured at saturation pump power. For the complementary difference frequency generation process, a single photon conversion efficiency of 7.2%/mW from visible to telecom is projected for resonators with optimized coupling. Efficient conversion from visible to telecom will facilitate long-distance transmission of spin-entangled photons from solid-state emitters such as the diamond NV center, allowing long-distance entanglement for quantum networks.
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Submitted 16 August, 2022; v1 submitted 13 August, 2022;
originally announced August 2022.
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Target-wavelength-trimmed second harmonic generation with gallium phosphide-on-nitride ring resonators
Authors:
Lillian Thiel,
Alan D. Logan,
Srivatsa Chakravarthi,
Shivangi Shree,
Karine Hestroffer,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm…
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We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm of a single target wavelength. Second harmonic generation from telecom to near infrared at a target wavelength is shown in multiple devices with quality factors on the order of $10^4$. Post-fabrication tuning is an essential tool for targeted wavelength applications including quantum frequency conversion
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Submitted 8 October, 2021; v1 submitted 7 October, 2021;
originally announced October 2021.
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Inverse-designed photon extractors for optically addressable defect qubits
Authors:
Srivatsa Chakravarthi,
Pengning Chao,
Christian Pederson,
Sean Molesky,
Andrew Ivanov,
Karine Hestroffer,
Fariba Hatami,
Alejandro W. Rodriguez,
Kai-Mei C. Fu
Abstract:
Solid-state defect qubit systems with spin-photon interfaces show great promise for quantum information and metrology applications. Photon collection efficiency, however, presents a major challenge for defect qubits in high refractive index host materials. Inverse-design optimization of photonic devices enables unprecedented flexibility in tailoring critical parameters of a spin-photon interface i…
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Solid-state defect qubit systems with spin-photon interfaces show great promise for quantum information and metrology applications. Photon collection efficiency, however, presents a major challenge for defect qubits in high refractive index host materials. Inverse-design optimization of photonic devices enables unprecedented flexibility in tailoring critical parameters of a spin-photon interface including spectral response, photon polarization and collection mode. Further, the design process can incorporate additional constraints, such as fabrication tolerance and material processing limitations. Here we design and demonstrate a compact hybrid gallium phosphide on diamond inverse-design planar dielectric structure coupled to single near-surface nitrogen-vacancy centers formed by implantation and annealing. We observe device operation near the theoretical limit and measure up to a 14-fold broadband enhancement in photon extraction efficiency. We expect that such inverse-designed devices will enable realization of scalable arrays of single-photon emitters, rapid characterization of new quantum emitters, sensing and efficient heralded entanglement schemes.
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Submitted 15 December, 2020; v1 submitted 24 July, 2020;
originally announced July 2020.
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400%/W second harmonic conversion efficiency in $\mathrm{14 μm}$-diameter gallium phosphide-on-oxide resonators
Authors:
Alan D. Logan,
Michael Gould,
Emma R. Schmidgall,
Karine Hestroffer,
Zin Lin,
Weiliang **,
Arka Majumdar,
Fariba Hatami,
Alejandro W. Rodriguez,
Kai-Mei C. Fu
Abstract:
Second harmonic conversion from 1550~nm to 775~nm with an efficiency of 400% W$^{-1}$ is demonstrated in a gallium phosphide (GaP) on oxide integrated photonic platform. The platform consists of doubly-resonant, phase-matched ring resonators with quality factors $Q \sim 10^4$, low mode volumes $V \sim 30 (λ/n)^3$, and high nonlinear mode overlaps. Measurements and simulations indicate that convers…
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Second harmonic conversion from 1550~nm to 775~nm with an efficiency of 400% W$^{-1}$ is demonstrated in a gallium phosphide (GaP) on oxide integrated photonic platform. The platform consists of doubly-resonant, phase-matched ring resonators with quality factors $Q \sim 10^4$, low mode volumes $V \sim 30 (λ/n)^3$, and high nonlinear mode overlaps. Measurements and simulations indicate that conversion efficiencies can be increased by a factor of 20 by improving the waveguide-cavity coupling to achieve critical coupling in current devices.
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Submitted 10 October, 2018;
originally announced October 2018.
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The electrical conductivity tensor of $β$-Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries
Authors:
Christian Golz,
Vanesa Hortelano,
Fariba Hatami,
W. Ted Masselink,
Zbigniew Galazka,
Oliver Bierwagen
Abstract:
The semiconducting oxide $β$-Gallium Oxide ($β$-Ga$_{2}$O$_{3}$) possesses a monoclinic unit cell whose low symmetry generally leads to anisotropic physical properties. For example, its electrical conductivity is generally described by a polar symmetrical tensor of second rank consisting of four independent components. Using van der Pauw measurements in a well-defined square geometry on differentl…
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The semiconducting oxide $β$-Gallium Oxide ($β$-Ga$_{2}$O$_{3}$) possesses a monoclinic unit cell whose low symmetry generally leads to anisotropic physical properties. For example, its electrical conductivity is generally described by a polar symmetrical tensor of second rank consisting of four independent components. Using van der Pauw measurements in a well-defined square geometry on differently-oriented high-quality bulk samples and the comparison to finite element simulations we precisely determine the ratio of all elements of the $β$-Ga$_{2}$O$_{3}$ 3-dimensional electrical conductivity tensor. Despite the structural anisotropy a nearly isotropic conductivity at and above room temperature was found with the principal conductivities deviating from each other by less than 6% and the off-diagonal element being $\approx3$% of the diagonal ones. Analysis of the temperature dependence of the anisotropy and mobility of differently doped samples allows us to compare the anisotropy for dominant phonon-scattering to that for dominant ionized-impurity scattering. For both scattering mechanisms, the conductivites along the $a$ and $b$-direction agree within 2%. In contrast, the conductivity along $c$-direction amounts to $0.96\times$ and up to $1.12\times$ that along the $b$-direction for phonon and ionized impurity scattering, respectively. The determined transport anisotropies are larger than the theoretically predicted effective mass anisotropy, suggesting slightly anisotropic scattering mechanisms. We demonstrate that significantly higher anisotropies can be caused by oriented extended structural defects in the form of low-angle grain boundaries for which we determined energy barriers of multiple 10 meV.
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Submitted 12 March, 2019; v1 submitted 21 June, 2018;
originally announced June 2018.
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Very degenerate elliptic equations under almost critical Sobolev regularity
Authors:
Albert Clop,
Raffaella Giova,
Farhad Hatami,
Antonia Passarelli di Napoli
Abstract:
We prove the local Lipschitz continuity and the higher differentiability of local minimizers of integral functionals with non autonomous integrand which is degenerate convex with respect to the gradient variable. The main novelty here is that the results are obtained assuming that the coefficients have weak derivative in an almost critical Zygmund class and the datum f is assumed to belong to the…
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We prove the local Lipschitz continuity and the higher differentiability of local minimizers of integral functionals with non autonomous integrand which is degenerate convex with respect to the gradient variable. The main novelty here is that the results are obtained assuming that the coefficients have weak derivative in an almost critical Zygmund class and the datum f is assumed to belong to the same Zygmund class.
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Submitted 6 June, 2019; v1 submitted 23 March, 2018;
originally announced March 2018.
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Frequency control of single quantum emitters in integrated photonic circuits
Authors:
Emma R. Schmidgall,
Srivatsa Chakravarthi,
Michael Gould,
Ian R. Christen,
Karine Hestroffer,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect…
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Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.
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Submitted 23 February, 2018;
originally announced February 2018.
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Graphene enhanced field emission from InP nanocrystals
Authors:
L. Iemmo,
A. Di Bartolomeo,
F. Giubileo,
G. Luongo,
M. Passacantando,
G. Niu,
F. Hatami,
O. Skibitzki,
T. Schroeder
Abstract:
We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP nanocrystals with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the field emission by Fowler-Nordheim theory and find t…
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We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP nanocrystals with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the field emission by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.
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Submitted 6 August, 2017;
originally announced August 2017.
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Efficient extraction of zero-phonon-line photons from single nitrogen-vacancy centers in an integrated GaP-on-diamond platform
Authors:
Michael Gould,
Emma R. Schmidgall,
Shabnam Dadgostar,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
Scaling beyond two-node quantum networks using nitrogen vacancy (NV) centers in diamond is limited by the low probability of collecting zero phonon line (ZPL) photons from single centers. Here, we demonstrate GaP-on-diamond disk resonators which resonantly couple ZPL photons from single NV centers to single-mode waveguides. In these devices, the probability of a single NV center emitting a ZPL pho…
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Scaling beyond two-node quantum networks using nitrogen vacancy (NV) centers in diamond is limited by the low probability of collecting zero phonon line (ZPL) photons from single centers. Here, we demonstrate GaP-on-diamond disk resonators which resonantly couple ZPL photons from single NV centers to single-mode waveguides. In these devices, the probability of a single NV center emitting a ZPL photon into the guided waveguide mode after optical excitation can reach 9%, due to a combination of resonant enhancement of the ZPL emission and efficient coupling between the resonator and waveguide. We verify the single-photon nature of the emission and experimentally demonstrate both high in-waveguide photon numbers and substantial Purcell enhancement for a set of devices. These devices may enable scalable integrated quantum networks based on NV centers.
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Submitted 15 June, 2016; v1 submitted 6 June, 2016;
originally announced June 2016.
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GaAs/GaP quantum dots: Ensemble of direct and indirect heterostructures with room temperature optical emission
Authors:
S. Dadgostar,
J. Schmidtbauer,
T. Boeck,
A. Torres,
O. Martínez,
J. Jiménez,
J. W. Tomm,
A. Mogilatenko,
W. T. Masselink,
F. Hatami
Abstract:
We describe the optical emission and the carrier dynamics of an ensemble of self-assembled GaAs quantum dots embedded in GaP(001). The QD formation is driven by the 3.6 % lattice mismatch between GaAs and GaP in Stranski-Krastanow mode after deposition of more than 1.2 monolayers of GaAs. The quantum dots have an areal density between 6 and 7.6x1010 per cm-2 and multimodal size distribution. The l…
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We describe the optical emission and the carrier dynamics of an ensemble of self-assembled GaAs quantum dots embedded in GaP(001). The QD formation is driven by the 3.6 % lattice mismatch between GaAs and GaP in Stranski-Krastanow mode after deposition of more than 1.2 monolayers of GaAs. The quantum dots have an areal density between 6 and 7.6x1010 per cm-2 and multimodal size distribution. The luminescence spectra show two peaks in the range of 1.7 and 2.1 eV. The samples with larger quantum dots have red emission and show less thermal quenching compared to the samples with smaller QDs. The large QDs luminescence up to room temperature. We attribute the high energy emission to indirect carrier recombination in the thin quantum wells or small strained quantum dots, whereas the low energy red emission is due to the direct electron-hole recombination in the relaxed quantum dots.
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Submitted 8 December, 2015;
originally announced December 2015.
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A Large-Scale GaP-on-Diamond Integrated Photonics Platform for NV Center-Based Quantum Information
Authors:
Michael Gould,
Srivatsa Chakravarthi,
Ian R. Christen,
Nicole Thomas,
Shabnam Dadgostar,
Yuncheng Song,
Minjoo Larry Lee,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place th…
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We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place the platform in a strong position to realize measurement-based quantum information protocols utilizing the NV center in diamond.
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Submitted 16 October, 2015;
originally announced October 2015.
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Ultra-Low Threshold Monolayer Semiconductor Nanocavity Lasers
Authors:
Sanfeng Wu,
Sonia Buckley,
John R. Schaibley,
Liefeng Feng,
Jiaqiang Yan,
David G. Mandrus,
Fariba Hatami,
Wang Yao,
Jelena Vuckovic,
Arka Majumdar,
Xiaodong Xu
Abstract:
Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation.…
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Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC). However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pum** threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.
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Submitted 6 February, 2015;
originally announced February 2015.
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Control of Two-Dimensional Excitonic Light Emission via Photonic Crystal
Authors:
Sanfeng Wu,
Sonia Buckley,
Aaron M. Jones,
Jason S. Ross,
Nirmal J. Ghimire,
Jiaqiang Yan,
David G. Mandrus,
Wang Yao,
Fariba Hatami,
Jelena Vučković,
Arka Majumdar,
Xiaodong Xu
Abstract:
Monolayers of transition metal dichalcogenides (TMDCs) have emerged as new optoelectronic materials in the two dimensional (2D) limit, exhibiting rich spin-valley interplays, tunable excitonic effects, and strong light-matter interactions. An essential yet undeveloped ingredient for many photonic applications is the manipulation of its light emission. Here we demonstrate the control of excitonic l…
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Monolayers of transition metal dichalcogenides (TMDCs) have emerged as new optoelectronic materials in the two dimensional (2D) limit, exhibiting rich spin-valley interplays, tunable excitonic effects, and strong light-matter interactions. An essential yet undeveloped ingredient for many photonic applications is the manipulation of its light emission. Here we demonstrate the control of excitonic light emission from monolayer tungsten diselenide (WSe2) in an integrated photonic structure, achieved by transferring one monolayer onto a photonic crystal (PhC) with a cavity. In addition to the observation of greatly enhanced (~60 times) photoluminescence of WSe2 and an effectively coupled cavity-mode emission, we are able to redistribute the emitted photons both polarly and azimuthally in the far field through designing PhC structures, as revealed by momentum-resolved microscopy. A 2D optical antenna is thus constructed. Our work suggests a new way of manipulating photons in hybrid 2D photonics, important for future energy efficient optoelectronics and 2D nano-lasers.
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Submitted 23 November, 2013;
originally announced November 2013.
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Controlling the Spontaneous Emission Rate of Monolayer MoS$_2$ in a Photonic Crystal Nanocavity
Authors:
Xuetao Gan,
Yuanda Gao,
Kin Fai Mak,
Xinwen Yao,
Ren-Jye Shiue,
Arend van der Zande,
Matthew Trusheim,
Fariba Hatami,
Tony F. Heinz,
James Hone,
Dirk Englund
Abstract:
We report on controlling the spontaneous emission (SE) rate of a molybdenum disulfide (MoS$_2$) monolayer coupled with a planar photonic crystal (PPC) nanocavity. Spatially resolved photoluminescence (PL) map** shows strong variations of emission when the MoS$_2$ monolayer is on the PPC cavity, on the PPC lattice, on the air gap, and on the unpatterned gallium phosphide substrate. Polarization d…
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We report on controlling the spontaneous emission (SE) rate of a molybdenum disulfide (MoS$_2$) monolayer coupled with a planar photonic crystal (PPC) nanocavity. Spatially resolved photoluminescence (PL) map** shows strong variations of emission when the MoS$_2$ monolayer is on the PPC cavity, on the PPC lattice, on the air gap, and on the unpatterned gallium phosphide substrate. Polarization dependences of the cavity-coupled MoS$_2$ emission show a more than 5 times stronger extracted PL intensity than the un-coupled emission, which indicates an underlying cavity mode Purcell enhancement of MoS$_2$ SE rate exceeding a factor of 70.
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Submitted 3 October, 2013;
originally announced October 2013.
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Bayesian Inference For Exponential Distribution Based On Upper Record Range
Authors:
P. Nasiri,
S. Hosseini,
M. Yarmohammadi,
F. Hatami
Abstract:
This paper deals with Bayesian estimations of scale parameter of the exponential distribution based on upper record range (Rn). This has been done in two steps; point and interval. In the first step the quadratic, squared error and absolute error, loss functions have been considered to obtain Bayesian-point estimations. Also in the next step the shortest Bayes interval (Hight Posterior Density int…
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This paper deals with Bayesian estimations of scale parameter of the exponential distribution based on upper record range (Rn). This has been done in two steps; point and interval. In the first step the quadratic, squared error and absolute error, loss functions have been considered to obtain Bayesian-point estimations. Also in the next step the shortest Bayes interval (Hight Posterior Density interval) and Bayes interval with equal tails based on upper record range have been found. Therefore, the Homotopy Perturbation Method(HPM) has been applied to obtain the limits of Hight Posterior Density intervals. Moreover, efforts have been made to meet the admissibility conditions for linear estimators based on upper record range of the form mRn+d by obtained Bayesian point estimations. So regarding the consideration of loss functions, the prior distribution between the conjunction family has been chosen to be able to produce the linear estimations from upper record range statistics. Finally, some numerical examples and simulations have been presented.
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Submitted 25 June, 2013;
originally announced June 2013.
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On the global existence solution for a chemotaxis model
Authors:
Farhad Hatami,
Mohammad Bagher Ghaemi
Abstract:
This paper has been withdrawn by the authors. We consider the attraction-repulsion chemotaxis system (3 complicated PDEs system) under homogeneous Neumann boundary conditions in a bounded domain Ω with smooth boundary, then the classical solutions to the system are uniformly-in-time bounded. After the local existence and uniqueness of solutions was proved, some priory estimates and proves will be…
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This paper has been withdrawn by the authors. We consider the attraction-repulsion chemotaxis system (3 complicated PDEs system) under homogeneous Neumann boundary conditions in a bounded domain Ω with smooth boundary, then the classical solutions to the system are uniformly-in-time bounded. After the local existence and uniqueness of solutions was proved, some priory estimates and proves will be established for the global existence of solutions (see the complete abstract in the PDF version of paper).
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Submitted 3 July, 2013; v1 submitted 24 June, 2013;
originally announced June 2013.
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Quasiresonant Excitation of InP/InGaP Quantum Dots Using Second Harmonic Generated in a Photonic Crystal Cavity
Authors:
Sonia Buckley,
Kelley Rivoire,
Fariba Hatami,
Jelena Vuckovic
Abstract:
Indistinguishable single photons are necessary for quantum information processing applications. Resonant or quasiresonant excitation of single quantum dots provides greater single photon indistinguishability than incoherent pum**, but is also more challenging experimentally. Here, we demonstrate high signal to noise quasiresonant excitation of InP/InGaP quantum dots. The excitation is provided v…
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Indistinguishable single photons are necessary for quantum information processing applications. Resonant or quasiresonant excitation of single quantum dots provides greater single photon indistinguishability than incoherent pum**, but is also more challenging experimentally. Here, we demonstrate high signal to noise quasiresonant excitation of InP/InGaP quantum dots. The excitation is provided via second harmonic generated from a telecommunications wavelength laser resonant with the fundamental mode of a photonic crystal cavity, fabricated at twice the quantum dot transition wavelength. The second harmonic is generated using the χ(2) nonlinearity of the InGaP material matrix.
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Submitted 3 October, 2012;
originally announced October 2012.
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Second harmonic generation in GaP photonic crystal waveguides
Authors:
Kelley Rivoire,
Sonia Buckley,
Fariba Hatami,
Jelena Vuckovic
Abstract:
We demonstrate enhanced second harmonic generation in a gallium phosphide photonic crystal waveguide with a measured external conversion efficiency of 5$\times10^{-7}$/W. Our results are promising for frequency conversion of on-chip integrated emitters having broad spectra or large inhomogeneous broadening, as well as for frequency conversion of ultrashort pulses.
We demonstrate enhanced second harmonic generation in a gallium phosphide photonic crystal waveguide with a measured external conversion efficiency of 5$\times10^{-7}$/W. Our results are promising for frequency conversion of on-chip integrated emitters having broad spectra or large inhomogeneous broadening, as well as for frequency conversion of ultrashort pulses.
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Submitted 31 May, 2011;
originally announced June 2011.
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Deterministic coupling of a single nitrogen vacancy center to a photonic crystal cavity
Authors:
Dirk Englund,
Brendan Shields,
Kelley Rivoire,
Fariba Hatami,
Jelena Vuckovic,
Hongkun Park,
Mikhail D. Lukin
Abstract:
We describe and experimentally demonstrate a technique for deterministic coupling between a photonic crystal (PC) nanocavity and single emitters. The technique is based on in-situ scanning of a PC cavity over a sample and allows the positioning of the cavity over a desired emitter with nanoscale resolution. The power of the technique, which we term a Scanning Cavity Microscope (SCM), is demonstrat…
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We describe and experimentally demonstrate a technique for deterministic coupling between a photonic crystal (PC) nanocavity and single emitters. The technique is based on in-situ scanning of a PC cavity over a sample and allows the positioning of the cavity over a desired emitter with nanoscale resolution. The power of the technique, which we term a Scanning Cavity Microscope (SCM), is demonstrated by coupling the PC nanocavity to a single nitrogen vacancy (NV) center in diamond, an emitter system that provides optically accessible electron and nuclear spin qubits.
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Submitted 12 May, 2010;
originally announced May 2010.
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Second harmonic generation in gallium phosphide photonic crystal nanocavities with ultralow continuous wave pump power
Authors:
Kelley Rivoire,
Ziliang Lin,
Fariba Hatami,
W. Ted Masselink,
Jelena Vuckovic
Abstract:
We demonstrate second harmonic generation in photonic crystal nanocavities fabricated in the semiconductor gallium phosphide. We observe second harmonic radiation at 750 nm with input powers of only nanowatts coupled to the cavity and conversion efficiency $P_{\rm out}/P_{\rm in, coupled}^2 = 430%/{\rm W}$. The large electronic band gap of GaP minimizes absorption loss, allowing efficient conver…
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We demonstrate second harmonic generation in photonic crystal nanocavities fabricated in the semiconductor gallium phosphide. We observe second harmonic radiation at 750 nm with input powers of only nanowatts coupled to the cavity and conversion efficiency $P_{\rm out}/P_{\rm in, coupled}^2 = 430%/{\rm W}$. The large electronic band gap of GaP minimizes absorption loss, allowing efficient conversion. Our results are promising for integrated, low-power light sources and on-chip reduction of input power in other nonlinear processes.
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Submitted 25 October, 2009;
originally announced October 2009.
