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Room-Temperature Charge Stability Modulated by Quantum Effects in a Nanoscale Silicon Island
Authors:
S. J. Shin,
J. J. Lee,
H. J. Kang,
J. B. Choi,
S. -R. Eric Yang,
Y. Takahashi,
D. G. Hasko
Abstract:
We report on transport measurement performed on a room-temperature-operating ultra-small Coulomb blockade devices with a silicon island of sub-5nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This…
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We report on transport measurement performed on a room-temperature-operating ultra-small Coulomb blockade devices with a silicon island of sub-5nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This key feature of charge stability with additional fine structures of Coulomb peaks are successfully modeled by including the interplay between Coulomb interaction, valley splitting, and strong quantum confinement, which leads to several low-energy many-body excited states for each dot occupancy. These excited states become enhanced in the sub-5nm ultra-small scale and persist even at 300K in the form of cluster, leading to the substantial modulation of charge stability.
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Submitted 18 January, 2012;
originally announced January 2012.
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Microwave-assisted transport via localized states in degenerately doped Si single electron transistors
Authors:
A. Rossi,
D. G. Hasko
Abstract:
Resonant microwave-assisted and DC transport are investigated in degenerately doped silicon single electron transistors. A model based on hop** via localized impurity states is developed and first used to explain both the DC temperature dependence and the AC response. In particular, the non-monotonic power dependence of the resonant current under irradiation is proved to be consistent with spati…
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Resonant microwave-assisted and DC transport are investigated in degenerately doped silicon single electron transistors. A model based on hop** via localized impurity states is developed and first used to explain both the DC temperature dependence and the AC response. In particular, the non-monotonic power dependence of the resonant current under irradiation is proved to be consistent with spatial Rabi oscillations between these localized states.
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Submitted 7 July, 2010; v1 submitted 9 March, 2010;
originally announced March 2010.
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Microwave driven arbitrary coupling between trapped charge resonances in a silicon single electron transistor
Authors:
Morteza Erfani,
David G. Hasko,
Alessandro Rossi,
Wan Sik Cho,
Jung-Bum Choi
Abstract:
In quantum computation, information is processed by gates that must coherently couple separate qubits. In many systems the qubits are naturally coupled, but such an always-on interaction limits the algorithms that may be implemented. Coupling interactions may also be directed in devices and circuits that are provided with additional control wiring. This can be achieved by adjusting the gate volta…
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In quantum computation, information is processed by gates that must coherently couple separate qubits. In many systems the qubits are naturally coupled, but such an always-on interaction limits the algorithms that may be implemented. Coupling interactions may also be directed in devices and circuits that are provided with additional control wiring. This can be achieved by adjusting the gate voltage in a semiconductor device or an additional flux in a superconducting device. Such control signals must be applied adiabatically (limiting the speed) and the additional wiring provides pathways for noise, which leads to decoherence. Here we demonstrate an alternative approach to coupling by exploiting the nonlinear behaviour of a degenerately doped silicon transistor. A single transistor can exhibit a large number of individual resonances, which are seen as changes in the source-drain current of a dc-biased device. These resonances may be addressed in frequency space due to their high quality factors. Two widely separated resonances are addressed and coupled in three-frequency spectroscopy by ensuring that the third frequency corresponds to the difference between the two individual resonances. The nonlinearity causes the generation of additional driving signals with appropriate frequency and phase relationships to ensure coupling, resulting in additional spectroscopic features that could be exploited for rapid state manipulation and gate operations.
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Submitted 10 March, 2010;
originally announced March 2010.
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Dynamical behavior of damped driven coupled single electron simple harmonic oscillators
Authors:
M. Ziaur Rahman Khan,
D. G. Hasko,
M. S. M. Saifullah,
M. E. Welland
Abstract:
Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave microwave spectroscopy to study the behavior of electrons trapped at defects within the gate dielectric of a sol-gel-based high-k silicon MOSFET. Disorder leads…
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Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave microwave spectroscopy to study the behavior of electrons trapped at defects within the gate dielectric of a sol-gel-based high-k silicon MOSFET. Disorder leads to a wide distribution in trap properties, allowing more than 1000 traps to be individually addressed in a single transistor within the accessible frequency domain. Their dynamical behavior is explored by pulsing the microwave excitation over a range of times comparable to the phase coherence time and the lifetime of the electron in the trap. Trap occupancy is limited to a single electron, which can be manipulated by resonant microwave excitation and the resulting change in trap occupancy is detected by the change in the channel current of the transistor. The trap behavior is described by a classical damped driven simple harmonic oscillator model, with the phase coherence, lifetime and coupling strength parameters derived from a continuous wave (CW) measurement only. For pulse times shorter than the phase coherence time, the energy exchange between traps, due to the coupling, strongly modulates the observed drain current change. This effect could be exploited for 2-qubit gate operation. The very large number of resonances observed in this system would allow a complex multi-qubit quantum mechanical circuit to be realized by this mechanism using only a single transistor.
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Submitted 31 March, 2011; v1 submitted 2 February, 2010;
originally announced February 2010.
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Enhanced Quantum Effects in an Ultra-Small Coulomb Blockaded Device Operating at Room-Temperature
Authors:
S. J. Shin,
C. S. Jeong,
B. J. Park,
T. K. Yoon,
J. J. Lee,
S. J. Kim,
J. B. Choi,
Y. Takahashi,
D. G. Hasko
Abstract:
An ultra-small Coulomb blockade device can be regarded as a mesoscopic artificial atom system and provides a rich experimental environment for studying quantum transport phenomena[1]. Previously, these quantum effects have been investigated using relatively large devices at ultra-low temperatures, where they give rise to a fine additional structure on the Coulomb oscillations [2-13]. Here, we re…
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An ultra-small Coulomb blockade device can be regarded as a mesoscopic artificial atom system and provides a rich experimental environment for studying quantum transport phenomena[1]. Previously, these quantum effects have been investigated using relatively large devices at ultra-low temperatures, where they give rise to a fine additional structure on the Coulomb oscillations [2-13]. Here, we report transport measurements carried out on a sub-2nm single-electron device; this size is sufficiently small that Coulomb blockade, and other quantum effects, persist up to room temperature (RT). These devices were made by scaling the size of a FinFET structure down to an ultimate limiting form, resulting in the reliable formation of a sub-2nm silicon Coulomb island. Four clear Coulomb diamonds can be observed at RT and the 2nd Coulomb diamond is unusually large, due to quantum confinement. The observed characteristics are successfully modeled on the basis of a very low electron number on the island, combined with Pauli spin exclusion. These effects offer additional functionality for future RT-operating single-electron device applications
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Submitted 21 January, 2010;
originally announced January 2010.
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Cryogenic instrumentation for fast current measurement in a silicon single electron transistor
Authors:
T. Ferrus,
D. G. Hasko,
Q. R. Morrissey,
S. R. Burge,
E. J. Freeman,
M. J. French,
A. Lam,
L. Creswell,
R. J. Collier,
D. A. Williams,
G. A. D. Briggs
Abstract:
We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance amplifiers. The ability for the low temperature electronics to carry out faster measurements than with room temperature electronics is investigated by the use of a phosp…
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We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance amplifiers. The ability for the low temperature electronics to carry out faster measurements than with room temperature electronics is investigated by the use of a phosphorous-doped single-electron transistor. A single-shot technique is successfully implemented and used to observe the real time decay of a quantum state. A discussion on various measurement strategies is presented and the consequences on electron heating and noise are analysed.
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Submitted 2 June, 2010; v1 submitted 21 April, 2009;
originally announced April 2009.
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Single shot measurement of a silicon single electron transistor
Authors:
D. G. Hasko,
T. Ferrus,
Q. R. Morrissey,
S. R. Burge,
E. J. Freeman,
M. J. French,
A. Lam,
L. Creswell,
R. J. Collier,
D. A. Williams,
G. A. D. Briggs
Abstract:
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorous-doped silicon single electron transistor that was irradiated with a microwave pu…
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We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorous-doped silicon single electron transistor that was irradiated with a microwave pulse. Relaxation times up to 90 us are observed, suggesting the presence of well isolated electron excitations within the device. It is expected that these are associated with long decoherence time and the device may be suitable for quantum information processing.
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Submitted 21 November, 2008; v1 submitted 5 November, 2008;
originally announced November 2008.
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A Model for an Irreversible Bias Current in the Superconducting Qubit Measurement Process
Authors:
G. D. Hutchinson,
C. A. Holmes,
T. M. Stace,
T. P. Spiller,
G. J. Milburn,
S. D. Barrett,
D. G. Hasko,
D. A. Williams
Abstract:
The superconducting charge-phase `Quantronium' qubit is considered in order to develop a model for the measurement process used in the experiment of Vion et. al. [Science 296 886 (2002)]. For this model we propose a method for including the bias current in the read-out process in a fundamentally irreversible way, which to first order, is approximated by the Josephson junction tilted-washboard po…
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The superconducting charge-phase `Quantronium' qubit is considered in order to develop a model for the measurement process used in the experiment of Vion et. al. [Science 296 886 (2002)]. For this model we propose a method for including the bias current in the read-out process in a fundamentally irreversible way, which to first order, is approximated by the Josephson junction tilted-washboard potential phenomenology. The decohering bias current is introduced in the form of a Lindblad operator and the Wigner function for the current biased read-out Josephson junction is derived and analyzed. During the read-out current pulse used in the Quantronium experiment we find that the coherence of the qubit initially prepared in a symmetric superposition state is lost at a time of 0.2 nanoseconds after the bias current pulse has been applied. A timescale which is much shorter than the experimental readout time. Additionally we look at the effect of Johnson-Nyquist noise with zero mean from the current source during the qubit manipulation and show that the decoherence due to the irreversible bias current description is an order of magnitude smaller than that found through adding noise to the reversible tilted washboard potential model. Our irreversible bias current model is also applicable to the persistent current based qubits where the state is measured according to its flux via a small inductance direct current superconducting quantum interference device (DC-SQUID).
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Submitted 10 October, 2006;
originally announced October 2006.
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Charge-qubit operation of an isolated double quantum dot
Authors:
J. Gorman,
D. G. Hasko,
D. A. Williams
Abstract:
We have investigated coherent time evolution of pseudo-molecular states of an isolated (leadless) silicon double quantum-dot, where operations are carried out via capacitively-coupled elements. Manipulation is performed by short pulses applied to a nearby gate, and measurement is performed by a single-electron transistor. The electrical isolation of this qubit results in a significantly longer c…
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We have investigated coherent time evolution of pseudo-molecular states of an isolated (leadless) silicon double quantum-dot, where operations are carried out via capacitively-coupled elements. Manipulation is performed by short pulses applied to a nearby gate, and measurement is performed by a single-electron transistor. The electrical isolation of this qubit results in a significantly longer coherence time than previous reports for semiconductor charge qubits realized in artificial molecules.
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Submitted 2 August, 2005; v1 submitted 18 April, 2005;
originally announced April 2005.
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Design of quasi-lateral p-n junction for optical spin-detection in low-dimensional systems
Authors:
B. Kaestner,
D. G. Hasko,
D. A. Williams
Abstract:
A technology is reviewed which allows one to produce quasi-lateral 2D electron and hole gas junctions of arbitrary shape. It may be implemented in a variety of semiconductor heterostructures. Here we concentrate on its realization in the GaAs/AlGaAs material system and discuss the possibility to use this structure for optical spin detection in low-dimensional systems.
A technology is reviewed which allows one to produce quasi-lateral 2D electron and hole gas junctions of arbitrary shape. It may be implemented in a variety of semiconductor heterostructures. Here we concentrate on its realization in the GaAs/AlGaAs material system and discuss the possibility to use this structure for optical spin detection in low-dimensional systems.
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Submitted 5 November, 2004;
originally announced November 2004.
