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Two-qubit logic between distant spins in silicon
Authors:
Jurgen Dijkema,
Xiao Xue,
Patrick Harvey-Collard,
Maximilian Rimbach-Russ,
Sander L. de Snoo,
Guoji Zheng,
Amir Sammak,
Giordano Scappucci,
Lieven M. K. Vandersypen
Abstract:
Direct interactions between quantum particles naturally fall off with distance. For future-proof qubit architectures, however, it is important to avail of interaction mechanisms on different length scales. In this work, we utilize a superconducting resonator to facilitate a coherent interaction between two semiconductor spin qubits 250 $μ$m apart. This separation is several orders of magnitude lar…
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Direct interactions between quantum particles naturally fall off with distance. For future-proof qubit architectures, however, it is important to avail of interaction mechanisms on different length scales. In this work, we utilize a superconducting resonator to facilitate a coherent interaction between two semiconductor spin qubits 250 $μ$m apart. This separation is several orders of magnitude larger than for the commonly employed direct interaction mechanisms in this platform. We operate the system in a regime where the resonator mediates a spin-spin coupling through virtual photons. We report anti-phase oscillations of the populations of the two spins with controllable frequency. The observations are consistent with iSWAP oscillations and ten nanosecond entangling operations. These results hold promise for scalable networks of spin qubit modules on a chip.
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Submitted 25 October, 2023;
originally announced October 2023.
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Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures
Authors:
L. Massai,
B. Hetényi,
M. Mergenthaler,
F. J. Schupp,
L. Sommer,
S. Paredes,
S. W. Bedell,
P. Harvey-Collard,
G. Salis,
A. Fuhrer,
N. W. Hendrickx
Abstract:
Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control. However, SOC also increases the susceptibility of spin qubits to charge noise. While qubit coherence can be significantly improved by operating at sweet spots with…
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Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control. However, SOC also increases the susceptibility of spin qubits to charge noise. While qubit coherence can be significantly improved by operating at sweet spots with reduced hyperfine or charge noise sensitivity, the latter ultimately limits coherence, underlining the importance of understanding and reducing charge noise at its source. In this work, we study the voltage-induced hysteresis commonly observed in SiGe-based quantum devices and show that the dominant charge fluctuators are localized at the semiconductor-oxide interface. By applying increasingly negative gate voltages to Hall bar and quantum dot devices, we investigate how the hysteretic filling of interface traps impacts transport metrics and charge noise. We find that the gate-induced accumulation and trap** of charge at the SiGe-oxide interface leads to an increased electrostatic disorder, as probed by transport measurements, as well as the activation of low-frequency relaxation dynamics, resulting in slow drifts and increased charge noise levels. Our results highlight the importance of a conservative device tuning strategy and reveal the critical role of the semiconductor-oxide interface in SiGe heterostructures for spin qubit applications.
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Submitted 9 October, 2023;
originally announced October 2023.
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Capacitive crosstalk in gate-based dispersive sensing of spin qubits
Authors:
Eoin G. Kelly,
Alexei Orekhov,
Nico Hendrickx,
Matthias Mergenthaler,
Felix Schupp,
Stephan Paredes,
Rafael S. Eggli,
Andreas V. Kuhlmann,
Patrick Harvey-Collard,
Andreas Fuhrer,
Gian Salis
Abstract:
In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the expense of increased susceptibility to crosstalk, as the resonator can amplify spurious signals and induce fluctuations in the quantum dot potential. We attach…
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In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the expense of increased susceptibility to crosstalk, as the resonator can amplify spurious signals and induce fluctuations in the quantum dot potential. We attach tank circuits with superconducting NbN inductors and internal quality factors $Q_{\mathrm{i}}$>1000 to the interdot barrier gate of silicon double quantum dot devices. Measuring the interdot transition in transport, we quantify radio-frequency crosstalk that results in a ring-up of the resonator when neighbouring plunger gates are driven with frequency components matching the resonator frequency. This effect complicates qubit operation and scales with the loaded quality factor of the resonator, the mutual capacitance between device gate electrodes, and with the inverse of the parasitic capacitance to ground. Setting qubit frequencies below the resonator frequency is expected to substantially suppress this type of crosstalk.
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Submitted 19 September, 2023;
originally announced September 2023.
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Probing the Jaynes-Cummings Ladder with Spin Circuit Quantum Electrodynamics
Authors:
Tobias Bonsen,
Patrick Harvey-Collard,
Maximilian Russ,
Jurgen Dijkema,
Amir Sammak,
Giordano Scappucci,
Lieven M. K. Vandersypen
Abstract:
We report observations of transitions between excited states in the Jaynes-Cummings ladder of circuit quantum electrodynamics with electron spins (spin circuit QED). We show that unexplained features in recent experimental work correspond to such transitions and present an input-output framework that includes these effects. In new experiments, we first reproduce previous observations and then reve…
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We report observations of transitions between excited states in the Jaynes-Cummings ladder of circuit quantum electrodynamics with electron spins (spin circuit QED). We show that unexplained features in recent experimental work correspond to such transitions and present an input-output framework that includes these effects. In new experiments, we first reproduce previous observations and then reveal both excited-state transitions and multiphoton transitions by increasing the probe power and using two-tone spectroscopy. This ability to probe the Jaynes-Cummings ladder is enabled by improvements in the coupling-to-decoherence ratio, and shows an increase in the maturity of spin circuit QED as an interesting platform for studying quantum phenomena.
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Submitted 25 April, 2023; v1 submitted 10 March, 2022;
originally announced March 2022.
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Coherent spin-spin coupling mediated by virtual microwave photons
Authors:
Patrick Harvey-Collard,
Jurgen Dijkema,
Guoji Zheng,
Amir Sammak,
Giordano Scappucci,
Lieven M. K. Vandersypen
Abstract:
We report the coherent coupling of two electron spins at a distance via virtual microwave photons. Each spin is trapped in a silicon double quantum dot at either end of a superconducting resonator, achieving spin-photon couplings up to around $g_s/2π= 40 \ \text{MHz}$. As the two spins are brought into resonance with each other, but detuned from the photons, an avoided crossing larger than the spi…
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We report the coherent coupling of two electron spins at a distance via virtual microwave photons. Each spin is trapped in a silicon double quantum dot at either end of a superconducting resonator, achieving spin-photon couplings up to around $g_s/2π= 40 \ \text{MHz}$. As the two spins are brought into resonance with each other, but detuned from the photons, an avoided crossing larger than the spin linewidths is observed with an exchange splitting around $2J/2π= 20 \ \text{MHz}$. In addition, photon-number states are resolved from the shift $2χ_s/2π= -13 \ \text{MHz}$ that they induce on the spin frequency. These observations demonstrate that we reach the strong dispersive regime of circuit quantum electrodynamics with spins. Achieving spin-spin coupling without real photons is essential to long-range two-qubit gates between spin qubits and scalable networks of spin qubits on a chip.
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Submitted 12 May, 2022; v1 submitted 2 August, 2021;
originally announced August 2021.
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On-chip microwave filters for high-impedance resonators with gate-defined quantum dots
Authors:
Patrick Harvey-Collard,
Guoji Zheng,
Jurgen Dijkema,
Nodar Samkharadze,
Amir Sammak,
Giordano Scappucci,
Lieven M. K. Vandersypen
Abstract:
Circuit quantum electrodynamics (QED) employs superconducting microwave resonators as quantum buses. In circuit QED with semiconductor quantum-dot-based qubits, increasing the resonator impedance is desirable as it enhances the coupling to the typically small charge dipole moment of these qubits. However, the gate electrodes necessary to form quantum dots in the vicinity of a resonator inadvertent…
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Circuit quantum electrodynamics (QED) employs superconducting microwave resonators as quantum buses. In circuit QED with semiconductor quantum-dot-based qubits, increasing the resonator impedance is desirable as it enhances the coupling to the typically small charge dipole moment of these qubits. However, the gate electrodes necessary to form quantum dots in the vicinity of a resonator inadvertently lead to a parasitic port through which microwave photons can leak, thereby reducing the quality factor of the resonator. This is particularly the case for high-impedance resonators, as the ratio of their total capacitance over the parasitic port capacitance is smaller, leading to larger microwave leakage than for 50-$Ω$ resonators. Here, we introduce an implementation of on-chip filters to suppress the microwave leakage. The filters comprise a high-kinetic-inductance nanowire inductor and a thin-film capacitor. The filter has a small footprint and can be placed close to the resonator, confining microwaves to a small area of the chip. The inductance and capacitance of the filter elements can be varied over a wider range of values than their typical spiral inductor and interdigitated capacitor counterparts. We demonstrate that the total linewidth of a 6.4 GHz and approximately 3-k$Ω$ resonator can be improved down to 540 kHz using these filters.
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Submitted 2 October, 2020; v1 submitted 11 May, 2020;
originally announced May 2020.
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Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures
Authors:
M. J. Curry,
M. Rudolph,
T. D. England,
A. M. Mounce,
R. M. Jock,
C. Bureau-Oxton,
P. Harvey-Collard,
P. A. Sharma,
J. M. Anderson,
D. M. Campbell,
J. R. Wendt,
D. R. Ward,
S. M. Carr,
M. P. Lilly,
M. S. Carroll
Abstract:
High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance o…
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High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 μW whereas the power of the AC-HBT ranges from 1 to 20 μW. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/$\sqrt{\textrm{Hz}}$ range. The charge sensitivity for the CB-HBT and AC-HBT is 330 μe/$\sqrt{\textrm{Hz}}$ and 400 μe/$\sqrt{\textrm{Hz}}$, respectively. For the single-shot readout performed, less than 10 μs is required for both circuits to achieve bit error rates below $10^{-3}$, which is a putative threshold for quantum error correction.
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Submitted 14 January, 2019;
originally announced January 2019.
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Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon
Authors:
Patrick Harvey-Collard,
N. Tobias Jacobson,
Chloé Bureau-Oxton,
Ryan M. Jock,
Vanita Srinivasa,
Andrew M. Mounce,
Daniel R. Ward,
John M. Anderson,
Ronald P. Manginell,
Joel R. Wendt,
Tammy Pluym,
Michael P. Lilly,
Dwight R. Luhman,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the s…
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Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.
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Submitted 11 June, 2019; v1 submitted 22 August, 2018;
originally announced August 2018.
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All-electrical universal control of a double quantum dot qubit in silicon MOS
Authors:
Patrick Harvey-Collard,
Ryan M. Jock,
N. Tobias Jacobson,
Andrew D. Baczewski,
Andrew M. Mounce,
Matthew J. Curry,
Daniel R. Ward,
John M. Anderson,
Ronald P. Manginell,
Joel R. Wendt,
Martin Rudolph,
Tammy Pluym,
Michael P. Lilly,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot rea…
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Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS.
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Submitted 6 February, 2018;
originally announced February 2018.
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Probing low noise at the MOS interface with a spin-orbit qubit
Authors:
Ryan M. Jock,
N. Tobias Jacobson,
Patrick Harvey-Collard,
Andrew M. Mounce,
Vanita Srinivasa,
Dan R. Ward,
John Anderson,
Ron Manginell,
Joel R. Wendt,
Martin Rudolph,
Tammy Pluym,
John King Gamble,
Andrew D. Baczewski,
Wayne M. Witzel,
Malcolm S. Carroll
Abstract:
The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns hav…
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The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $μ$s using 99.95% $^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise.
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Submitted 13 July, 2017;
originally announced July 2017.
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Coupling MOS Quantum Dot and Phosphorus Donor Qubit Systems
Authors:
M. Rudolph,
P. Harvey-Collard,
R. Jock,
N. T. Jacobson,
J. Wendt,
T. Pluym,
J. Dominguez,
G. Ten-Eyck,
R. Manginell,
M. P. Lilly,
M. S. Carroll
Abstract:
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin qubit that evolves under the QD-donor exchange interaction and the hyperfine interact…
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Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.
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Submitted 16 May, 2017;
originally announced May 2017.
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High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
Authors:
Patrick Harvey-Collard,
Benjamin D'Anjou,
Martin Rudolph,
N. Tobias Jacobson,
Jason Dominguez,
Gregory A. Ten Eyck,
Joel R. Wendt,
Tammy Pluym,
Michael P. Lilly,
William A. Coish,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge map** processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readou…
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The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge map** processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readout. We achieve average single-shot readout fidelities > 99.3% and > 99.86% for the conventional and enhanced readout respectively, the latter being the highest to date for spin blockade. The signal amplitude is enhanced to a full one-electron signal while preserving the readout speed. Furthermore, layout constraints are relaxed because the charge sensor signal is no longer dependent on being aligned with the conventional (2, 0) - (1, 1) charge dipole. Silicon donor-quantum-dot qubits are used for this study, for which the dipole insensitivity substantially relaxes donor placement requirements. One of the readout variations also benefits from a parametric lifetime enhancement by replacing the spin-relaxation process with a charge-metastable one. This provides opportunities to further increase the fidelity. The relaxation mechanisms in the different regimes are investigated. This work demonstrates a readout that is fast, has one-electron signal and results in higher fidelity. It further predicts that going beyond 99.9% fidelity in a few microseconds of measurement time is within reach.
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Submitted 31 January, 2018; v1 submitted 7 March, 2017;
originally announced March 2017.
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Valley splitting of single-electron Si MOS quantum dots
Authors:
John King Gamble,
Patrick Harvey-Collard,
N. Tobias Jacobson,
Andrew D. Baczewski,
Erik Nielsen,
Leon Maurer,
Inès Montaño,
Martin Rudolph,
M. S. Carroll,
C. H. Yang,
A. Rossi,
A. S. Dzurak,
Richard P. Muller
Abstract:
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory rem…
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Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from a new experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both the new experiment and a recently reported one. Through sampling millions of realistic cases of interface roughness, our method provides evidence that, despite radically different processing, the valley physics between the two samples is essentially the same. This work provides the first evidence that valley splitting can be deterministically predicted and controlled in metal oxide semiconductor quantum dots, a critical requirement for such systems to realize a reliable qubit platform.
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Submitted 11 October, 2016;
originally announced October 2016.
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Coherent coupling between a quantum dot and a donor in silicon
Authors:
Patrick Harvey-Collard,
N. Tobias Jacobson,
Martin Rudolph,
Jason Dominguez,
Gregory A. Ten Eyck,
Joel R. Wendt,
Tammy Pluym,
John King Gamble,
Michael P. Lilly,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of…
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Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a $^{31}$P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show that the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit.
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Submitted 18 October, 2017; v1 submitted 4 December, 2015;
originally announced December 2015.
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A Silicon Nanocrystal Tunnel Field Effect Transistor
Authors:
Patrick Harvey-Collard,
Dominique Drouin,
Michel Pioro-Ladrière
Abstract:
In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very thin silicon dioxyde and the channel in intrinsic polycrystalline silicon. The absence of do** eliminates the problem of achieving sharp do** profiles at th…
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In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very thin silicon dioxyde and the channel in intrinsic polycrystalline silicon. The absence of do** eliminates the problem of achieving sharp do** profiles at the junctions, which has proven a challenge for large-scale integration and in principle allows scaling down the atomic level. The demonstrated ncFET features a 10$^4$ on/off current ratio at room temperature, a low 30 pA/$μ$m leakage current at a 0.5 V bias, an on-state current on a par with typical all-Si TFETs and bipolar operation with high symmetry. Quantum dot transport spectroscopy is used to assess the band structure and energy levels of the silicon island.
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Submitted 19 May, 2014; v1 submitted 6 May, 2014;
originally announced May 2014.
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Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry
Authors:
Patrick Harvey-Collard,
Abdelatif Jaouad,
Dominique Drouin,
Michel Pioro-Ladrière
Abstract:
Inductively Coupled Plasma (ICP) etching of amorphous silicon (a-Si) nanostructures using a continuous C4F8/SF6 plasma over nanotopography in silicon dioxide (SiO2) is investigated. The coil power of the ICP system is used to tune the a-Si etch rate from 20 to 125 nm/min. The etch rates of a-Si, SiO2 and electroresist are measured depending on the SF6 ratio, platen power and chamber pressure and u…
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Inductively Coupled Plasma (ICP) etching of amorphous silicon (a-Si) nanostructures using a continuous C4F8/SF6 plasma over nanotopography in silicon dioxide (SiO2) is investigated. The coil power of the ICP system is used to tune the a-Si etch rate from 20 to 125 nm/min. The etch rates of a-Si, SiO2 and electroresist are measured depending on the SF6 ratio, platen power and chamber pressure and used to optimize the a-Si:SiO2 etch selectivity. The results on nanostructures show that the presence of an insulating etch-stop layer affects the passivation ratio required to achieve vertical sidewalls. A low pressure is also necessary in order to etch the silicon nanostructure embedded into the oxide nanotrenches to form a highly conformable a-Si nanowire. We argue that both of these behaviors could be explained by surface charging effects. Finally, etching of 20 nm a-Si nanowires that cross 15 nm trenches in oxide with vertical sidewalls and a 4.3:1 a-Si:SiO2 etch selectivity is demonstrated. This etching process can be used in applications where nanotopography is present such as single electron transistors or multigate transistors.
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Submitted 2 May, 2013;
originally announced May 2013.
