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Spatially sha** waves to penetrate deep inside a forbidden gap
Authors:
Ravitej Uppu,
Manashee Adhikary,
Cornelis A. M. Harteveld,
Willem L. Vos
Abstract:
It is well known that waves incident upon a crystal are transported only over a limited distance - the Bragg length - before being reflected by Bragg interference. Here, we demonstrate how to send waves much deeper into crystals, by studying light in exemplary two-dimensional silicon photonic crystals. By spatially sha** the optical wavefronts, we observe that the intensity of laterally scattere…
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It is well known that waves incident upon a crystal are transported only over a limited distance - the Bragg length - before being reflected by Bragg interference. Here, we demonstrate how to send waves much deeper into crystals, by studying light in exemplary two-dimensional silicon photonic crystals. By spatially sha** the optical wavefronts, we observe that the intensity of laterally scattered light, that probes the internal energy density, is enhanced at a tunable distance away from the front surface. The intensity is up to $100 \times$ enhanced compared to random wavefronts and extends as far as $8 \times$ the Bragg length. Our novel steering of waves inside a forbidden gap exploits the transport channels induced by unavoidable deviations from perfect periodicity, here unavoidable fabrication deviations.
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Submitted 21 July, 2020;
originally announced July 2020.
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Reflectivity of Finite 3D GaAs Photonic Band Gap Crystals
Authors:
Takeyoshi Tajiri,
Shun Takahashi,
Cornelis A. M. Harteveld,
Yasuhiko Arakawa,
Satoshi Iwamoto,
Willem L. Vos
Abstract:
We study the optical reflectivity of three-dimensional (3D) photonic band gap crystals with increasing thickness. The crystals consist of GaAs plates with nanorod arrays that are assembled by an advanced stacking method into high-quality 3D woodpile structures. We observe intense and broad reflectivity peak with stop bands that correspond to a broad gap in the photonic band structures. The maximum…
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We study the optical reflectivity of three-dimensional (3D) photonic band gap crystals with increasing thickness. The crystals consist of GaAs plates with nanorod arrays that are assembled by an advanced stacking method into high-quality 3D woodpile structures. We observe intense and broad reflectivity peak with stop bands that correspond to a broad gap in the photonic band structures. The maximum reflectivity quickly reaches high values even for a few crystal layers. Remarkably, the bandwidth of the stop bands hardly decreases with increasing crystal thickness, in good agreement with FDTD simulations. This behavior differs remarkably from the large changes observed earlier in weakly interacting 3D photonic crystals. The nearly constant bandwidth and high reflectivity are rationalized by multiple Bragg interference that occurs in strongly interacting photonic band gap crystals, whereby the incident light scatters from multiple reciprocal lattice vectors simultaneously, in particular from oblique ones that are parallel to a longer crystal dimension and thus experience hardly any finite size effects. Our new insights have favorable consequences for the application of 3D photonic band gap crystals, notably since even thin structures reveal the full band gap functionality, including devices that shield quantum bits from vacuum fluctuations.
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Submitted 17 January, 2020;
originally announced January 2020.
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Experimental probe of a complete 3D photonic band gap
Authors:
Manashee Adhikary,
Ravitej Uppu,
Cornelis A. M. Harteveld,
Diana A. Grishina,
Willem L. Vos
Abstract:
The identification of a complete three-dimensional (3D) photonic band gap in real crystals always employs theoretical or numerical models that invoke idealized crystal structures. Thus, this approach is prone to false positives (gap wrongly assigned) or false negatives (gap missed). Therefore, we propose a purely experimental probe of the 3D photonic band gap that pertains to many different classe…
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The identification of a complete three-dimensional (3D) photonic band gap in real crystals always employs theoretical or numerical models that invoke idealized crystal structures. Thus, this approach is prone to false positives (gap wrongly assigned) or false negatives (gap missed). Therefore, we propose a purely experimental probe of the 3D photonic band gap that pertains to many different classes of photonic materials. We study position and polarization-resolved reflectivity spectra of 3D inverse woodpile structures that consist of two perpendicular nanopore arrays etched in silicon. We observe intense reflectivity peaks $(R > 90\%)$ typical of high-quality crystals with broad stopbands. We track the stopband width versus pore radius, which agrees much better with the predicted 3D photonic band gap than with a directional stop gap on account of the large numerical aperture used. A parametric plot of s-polarized versus p-polarized stopband width agrees very well with the 3D band gap and is model-free. This practical probe provides fast feedback on the advanced nanofabrication needed for 3D photonic crystals and stimulates practical applications of band gaps in 3D silicon nanophotonics and photonic integrated circuits, photovoltaics, cavity QED, and quantum information processing.
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Submitted 5 September, 2019; v1 submitted 4 September, 2019;
originally announced September 2019.
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X-ray imaging non-destructively identifies functional 3D photonic nanostructures
Authors:
D. A. Grishina,
C. A. M. Harteveld,
A. Pacureanu,
D. Devashish,
A. Lagendijk,
P. Cloetens,
W. L. Vos
Abstract:
To investigate the performance of three-dimensional (3D) nanostructures, it is vital to study in situ their internal structure non-destructively. Hence, we perform synchrotron X-ray holographic tomography on exemplary 3D silicon photonic band gap crystals without irreversible preparation steps. Here, we obtain real space 3D density distributions of whole crystals buried on 2 mm^2 beams with 20 nan…
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To investigate the performance of three-dimensional (3D) nanostructures, it is vital to study in situ their internal structure non-destructively. Hence, we perform synchrotron X-ray holographic tomography on exemplary 3D silicon photonic band gap crystals without irreversible preparation steps. Here, we obtain real space 3D density distributions of whole crystals buried on 2 mm^2 beams with 20 nanometer resolution. Our X-ray results identify why structures that look similar in scanning electron microscopy have vastly different nanophotonic functionality: One crystal with a broad photonic gap reveals 3D periodicity as designed ("Good"), a second structure without gap reveals a buried void ("Bad"), a third one without gap is shallow due to fabrication errors ("Ugly"). We conclude that X-ray tomography is a crucial tool to critically assess 3D functional nanostructures.
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Submitted 3 August, 2018;
originally announced August 2018.
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Looking inside three-dimensional (3D) silicon photonic band gap crystals
Authors:
W. L. Vos,
D. A. Grishina,
P. Cloetens,
C. A. M. Harteveld,
P. W. H. Pinkse
Abstract:
We have performed an x-ray holotomography study of a three-dimensional (3D) photonic band gap crystal. The crystals was made from silicon by CMOS-compatible methods. We manage to obtain the 3D material density throughout the fabricated crystal. We observe that the structural design is for most aspects well-realized by the fabricated nanostructure. One peculiar feature is a slight shear-distortion…
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We have performed an x-ray holotomography study of a three-dimensional (3D) photonic band gap crystal. The crystals was made from silicon by CMOS-compatible methods. We manage to obtain the 3D material density throughout the fabricated crystal. We observe that the structural design is for most aspects well-realized by the fabricated nanostructure. One peculiar feature is a slight shear-distortion of the cubic crystal structure. We conclude that 3D X-ray tomography has great potential to solve many future questions on optical metamaterials.
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Submitted 8 September, 2016;
originally announced October 2016.
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Method to make a single-step etch mask for 3D monolithic nanostructures
Authors:
D. A. Grishina,
C. A. M. Harteveld,
L. A. Woldering,
W. L. Vos
Abstract:
Current nanostructure fabrication by etching is usually limited to planar structures as they are defined by a planar mask. The realisation of three-dimensional (3D) nanostructures by etching requires technologies beyond planar masks. We present a method to fabricate a 3D mask that allows to etch three-dimensional monolithic nanostructures by using only CMOS-compatible processes. The mask is writte…
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Current nanostructure fabrication by etching is usually limited to planar structures as they are defined by a planar mask. The realisation of three-dimensional (3D) nanostructures by etching requires technologies beyond planar masks. We present a method to fabricate a 3D mask that allows to etch three-dimensional monolithic nanostructures by using only CMOS-compatible processes. The mask is written in a hard-mask layer that is deposited on two adjacent inclined surfaces of a Si wafer. By projecting in single step two different 2D patterns within one 3D mask on the two inclined surfaces, the mutual alignment between the patterns is ensured. Thereby after the mask pattern is defined, the etching of deep pores in two oblique directions yields a three-dimensional structure in Si. As a proof of concept we demonstrate 3D mask fabrication for three-dimensional diamond-like photonic band gap crystals in silicon. The fabricated crystals reveal a broad stop gap in optical reflectivity measurements. We propose how 3D nanostructures with five different Bravais lattices can be realised, namely cubic, tetragonal, orthorhombic, monoclinic, and hexagonal, and demonstrate a mask for a 3D hexagonal crystal. We also demonstrate the mask for a diamond-structure crystal with a 3D array of cavities. In general, the 2D patterns for the different surfaces can be completely independent and still be in perfect mutual alignment. Indeed, we observe an alignment accuracy of better than 3.0 nm between the 2D mask patterns on the inclined surfaces, which permits one to etch well-defined monolithic 3D nanostructures.
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Submitted 29 June, 2015; v1 submitted 29 May, 2015;
originally announced May 2015.
