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Freeform terahertz structures fabricated by multi-photon lithography and metal coating
Authors:
Pascal Maier,
Alexander Kotz,
Joachim Hebeler,
Qiaoshuang Zhang,
Christian Benz,
Alexander Quint,
Marius Kretschmann,
Tobias Harter,
Sebastian Randel,
Uli Lemmer,
Wolfgang Freude,
Thomas Zwick,
Christian Koos
Abstract:
Direct-write multi-photon laser lithography (MPL) combines highest resolution on the nanoscale with essentially unlimited 3D design freedom. Over the previous years, the groundbreaking potential of this technique has been demonstrated in various application fields, including micromechanics, material sciences, microfluidics, life sciences as well as photonics, where in-situ printed optical coupling…
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Direct-write multi-photon laser lithography (MPL) combines highest resolution on the nanoscale with essentially unlimited 3D design freedom. Over the previous years, the groundbreaking potential of this technique has been demonstrated in various application fields, including micromechanics, material sciences, microfluidics, life sciences as well as photonics, where in-situ printed optical coupling elements offer new perspectives for package-level system integration. However, millimeter-wave (mmW) and terahertz (THz) devices could not yet leverage the unique strengths of MPL, even though the underlying devices and structures could also greatly benefit from 3D freeform microfabrication. One of the key challenges in this context is the fact that functional mmW and THz structures require materials with high electrical conductivity and low dielectric losses, which are not amenable to structuring by multi-photon polymerization. In this work, we introduce and experimentally demonstrate a novel approach that allows to leverage MPL for fabricating high-performance mmW and THz structures with hitherto unachieved functionalities. Our concept exploits in-situ printed polymer templates that are selectively coated through highly directive metal deposition techniques in combination with precisely aligned 3D-printed shadowing structures. The resulting metal-coated freeform structures offer high surface quality in combination with low dielectric losses and conductivities comparable to bulk material values, while lending themselves to fabrication on planar mmW/THz circuits. We experimentally show the viability of our concept by demonstrating a series of functional THz structures such as THz interconnects, probe tips, and suspended antennas. We believe that our approach offers disruptive potential in the field of mmW and THz technology and may unlock an entirely new realm of laser-based 3D manufacturing.
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Submitted 6 January, 2024;
originally announced January 2024.
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Generalized Kramers-Kronig Receiver for Coherent THz Communications
Authors:
Tobias Harter,
Christoph Füllner,
Juned N. Kemal,
Sandeep Ummethala,
Johannes L. Steinmann,
Miriam Brosi,
Jeffrey L. Hesler,
Erik Bründermann,
Anke-Susanne Müller,
Wolfgang Freude,
Sebastian Randel,
Christian Koos
Abstract:
High-speed communication systems rely on spectrally efficient modulation formats that encode information both on the amplitude and on the phase of an electromagnetic carrier. Coherent detection of such signals typically uses rather complex receiver schemes, requiring a continuous-wave (c.w.) local oscillator (LO) as a phase reference and a mixer circuit for spectral down-conversion. In optical com…
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High-speed communication systems rely on spectrally efficient modulation formats that encode information both on the amplitude and on the phase of an electromagnetic carrier. Coherent detection of such signals typically uses rather complex receiver schemes, requiring a continuous-wave (c.w.) local oscillator (LO) as a phase reference and a mixer circuit for spectral down-conversion. In optical communications, the so-called Kramers-Kronig (KK) scheme has been demonstrated to greatly simplify the receiver, reducing the hardware to a single photodiode. In this approach, an LO tone is transmitted along with the signal, and the amplitude and phase of the complex signal envelope are reconstructed from the photocurrent by digital signal processing. This reconstruction exploits the fact that the real and the imaginary part, or, equivalently, the amplitude and the phase of an analytic signal are connected by a KK-type relation. Here, we transfer the KK scheme to high-speed wireless communications at THz carrier frequencies. We use a Schottky-barrier diode (SBD) as a nonlinear element and generalize the theory of KK processing to account for the non-quadratic characteristics of this device. Using 16-state quadrature amplitude modulation (16QAM), we transmit a net data rate of 115 Gbit/s at a carrier frequency of 0.3 THz over a distance of 110 m.
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Submitted 8 July, 2019;
originally announced July 2019.
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Wireless THz link with optoelectronic transmitter and receiver
Authors:
Tobias Harter,
Sandeep Ummethala,
Matthias Blaicher,
Sascha Muehlbrandt,
Stefan Wolf,
Marco Weber,
Md Mosaddek Hossain Adib,
Juned N. Kemal,
Marco Merboldt,
Florian Boes,
Simon Nellen,
Axel Tessmann,
Martin Walther,
Björn Globisch,
Thomas Zwick,
Wolfgang Freude,
Sebastian Randel,
Christian Koos
Abstract:
Photonics might play a key role in future wireless communication systems that operate at THz carrier frequencies. A prime example is the generation of THz data streams by mixing optical signals in high-speed photodetectors. Over the previous years, this concept has enabled a series of wireless transmission experiments at record-high data rates. Reception of THz signals in these experiments, howeve…
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Photonics might play a key role in future wireless communication systems that operate at THz carrier frequencies. A prime example is the generation of THz data streams by mixing optical signals in high-speed photodetectors. Over the previous years, this concept has enabled a series of wireless transmission experiments at record-high data rates. Reception of THz signals in these experiments, however, still relied on electronic circuits. In this paper, we show that wireless THz receivers can also greatly benefit from optoelectronic signal processing techniques, in particular when carrier frequencies beyond 0.1 THz and wideband tunability over more than an octave is required. Our approach relies on a high-speed photoconductor and a photonic local oscillator for optoelectronic down-conversion of THz data signals to an intermediate frequency band that is easily accessible by conventional microelectronics. By tuning the frequency of the photonic local oscillator, we can cover a wide range of carrier frequencies between 0.03 THz and 0.34 THz. We demonstrate line rates of up to 10 Gbit/s on a single channel and up to 30 Gbit/s on multiple channels over a distance of 58 m. To the best of our knowledge, our experiments represent the first demonstration of a THz transmission link that exploits optoelectronic signal processing techniques both at the transmitter and the receiver.
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Submitted 10 January, 2019;
originally announced January 2019.
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THz-to-Optical Conversion in Wireless Communications Using an Ultra-Broadband Plasmonic Modulator
Authors:
Sandeep Ummethala,
Tobias Harter,
Kira Koehnle,
Zheng Li,
Sascha Muehlbrandt,
Yasar Kutuvantavida,
Juned Kemal,
Jochen Schaefer,
Axel Tessmann,
Suresh Kumar Garlapati,
Andreas Bacher,
Lothar Hahn,
Martin Walther,
Thomas Zwick,
Sebastian Randel,
Wolfgang Freude,
Christian Koos
Abstract:
Future wireless communication networks have to handle data rates of tens or even hundreds of Gbit/s per link, requiring carrier frequencies in the unallocated terahertz (THz) spectrum. In this context, seamless integration of THz links into existing fiber-optic infrastructures is of great importance to complement the inherent portability and flexibility advantages of wireless networks by the relia…
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Future wireless communication networks have to handle data rates of tens or even hundreds of Gbit/s per link, requiring carrier frequencies in the unallocated terahertz (THz) spectrum. In this context, seamless integration of THz links into existing fiber-optic infrastructures is of great importance to complement the inherent portability and flexibility advantages of wireless networks by the reliable and virtually unlimited capacity of optical transmission systems. On the technological level, this requires novel device and signal processing concepts for direct conversion of data streams between the THz and the optical domains. Here, we report on the first demonstration of a THz link that is seamlessly integrated into a fiber-optic network using direct terahertz-to-optical (T/O) conversion at the wireless receiver. We exploit an ultra-broadband silicon-plasmonic modulator having a 3 dB bandwidth in excess of 0.36 THz for T/O conversion of a 50 Gbit/s data stream that is transmitted on a 0.2885 THz carrier over a 16 m-long wireless link. Optical-to-terahertz (O/T) conversion at the wireless transmitter relies on photomixing in a uni-travelling-carrier photodiode.
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Submitted 6 November, 2018;
originally announced December 2018.
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Silicon-plasmonic integrated circuits for terahertz signal generation and coherent detection
Authors:
Tobias Harter,
Sascha Muehlbrandt,
Sandeep Ummethala,
Alexander Schmid,
Lothar Hahn,
Wolfgang Freude,
Christian Koos
Abstract:
Optoelectronic signal processing offers great potential for generation and detection of ultra-broadband waveforms in the THz range, so-called T-waves. However, fabrication of the underlying high-speed photodiodes and photoconductors still relies on complex processes using dedicated III-V semiconductor substrates. This severely limits the application potential of current T-wave transmitters and rec…
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Optoelectronic signal processing offers great potential for generation and detection of ultra-broadband waveforms in the THz range, so-called T-waves. However, fabrication of the underlying high-speed photodiodes and photoconductors still relies on complex processes using dedicated III-V semiconductor substrates. This severely limits the application potential of current T-wave transmitters and receivers, in particular when it comes to highly integrated systems that combine photonic signal processing with optoelectronic conversion to THz frequencies. In this paper, we demonstrate that these limitations can be overcome by plasmonic internal photoemission detectors (PIPED). PIPED can be realized on the silicon photonic platform and hence allow to leverage the enormous opportunities of the associated device portfolio. In our experiments, we demonstrate both T-wave signal generation and coherent detection at frequencies of up to 1 THz. To proof the viability of our concept, we monolithically integrate a PIPED transmitter and a PIPED receiver on a common silicon photonic chip and use them for measuring the complex transfer impedance of an integrated T-wave device.
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Submitted 23 February, 2018;
originally announced February 2018.
