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Stable electroluminescence in ambipolar dopant-free lateral p-n junctions
Authors:
Lin Tian,
Francois Sfigakis,
Arjun Shetty,
Ho-Sung Kim,
Nachiket Sherlekar,
Sara Hosseini,
Man Chun Tam,
Brad van Kasteren,
Brandon Buonacorsi,
Zach Merino,
Stephen R. Harrigan,
Zbigniew Wasilewski,
Jonathan Baugh,
Michael E. Reimer
Abstract:
Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other components, such as single electron pumps and spin qubits. A major obstacle to integration has been unwanted charge accumulation at the p-n junction gap that suppr…
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Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other components, such as single electron pumps and spin qubits. A major obstacle to integration has been unwanted charge accumulation at the p-n junction gap that suppresses light emission, either due to enhanced non-radiative recombination or inhibition of p-n current. Typically, samples must frequently be warmed to room temperature to dissipate this built-up charge and restore light emission in a subsequent cooldown. Here, we introduce a practical gate voltage protocol that clears this parasitic charge accumulation, in-situ at low temperature, enabling the indefinite cryogenic operation of devices. This reset protocol enabled the optical characterization of stable, bright, dopant-free lateral p-n junctions with electroluminescence linewidths among the narrowest (< 1 meV; < 0.5 nm) reported in this type of device. It also enabled the unambiguous identification of the ground state of neutral free excitons (heavy and light holes), as well as charged excitons (trions). The free exciton emission energies for both photoluminescence and electroluminescence are found to be nearly identical (within 0.2 meV or 0.1 nm). The binding and dissociation energies for free and charged excitons are reported. A free exciton lifetime of 237 ps was measured by time-resolved electroluminescence, compared to 419 ps with time-resolved photoluminescence.
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Submitted 15 August, 2023; v1 submitted 19 June, 2023;
originally announced June 2023.
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Geometry-dependent two-photon absorption followed by free-carrier absorption in AlGaAs waveguides
Authors:
Daniel H. G. Espinosa,
Stephen R. Harrigan,
Kashif M. Awan,
Payman Rasekh,
Ksenia Dolgaleva
Abstract:
Nonlinear absorption can limit the efficiency of nonlinear optical devices. However, it can also be exploited for optical limiting or switching applications. Thus, characterization of nonlinear absorption in photonic devices is imperative. This work used the nonlinear transmittance technique to measure the two-photon absorption coefficients ($α_2$) of AlGaAs waveguides in the strip-loaded, nanowir…
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Nonlinear absorption can limit the efficiency of nonlinear optical devices. However, it can also be exploited for optical limiting or switching applications. Thus, characterization of nonlinear absorption in photonic devices is imperative. This work used the nonlinear transmittance technique to measure the two-photon absorption coefficients ($α_2$) of AlGaAs waveguides in the strip-loaded, nanowire, and half-core geometries in the wavelength range from $1480$ to $1560~\text{nm}$. The highest $α_2$ values of $2.4$, $2.3$, and $1.1~\text{cm}/\text{GW}$ were measured at $1480~\text{nm}$ for a $0.8$-nm-wide half-core, $0.6$-nm-wide nanowire, and $0.9$-nm-wide strip-loaded waveguides, respectively, with $α_2$ decreasing with increasing wavelength. The free-carrier absorption cross-section was also estimated from the nonlinear transmittance data to be around $2.2\times10^{-16}~\text{cm}^2$ for all three geometries. Our results contribute to a better understanding of the nonlinear absorption in heterostructure waveguides of different cross-sectional geometries. We discuss how the electric field distribution in the different layers of a heterostructure can lead to geometry-dependent effective two-photon absorption coefficients. More specifically, we pinpoint the third-order nonlinear confinement factor as a design parameter to estimate the strength of the effective nonlinear absorption, in addition to tailoring the bandgap energy by varying material composition.
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Submitted 26 October, 2021; v1 submitted 21 July, 2021;
originally announced July 2021.
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Optical observation of single spins in silicon
Authors:
A. T. K. Kurkjian,
D. B. Higginbottom,
C. Chartrand,
E. R. MacQuarrie,
J. R. Klein,
N. R. Lee-Hone,
J. Stacho,
C. Bowness,
L. Bergeron,
A. DeAbreu,
N. A. Brunelle,
S. R. Harrigan,
J. Kanaganayagam,
M. Kazemi,
D. W. Marsden,
T. S. Richards,
L. A. Stott,
S. Roorda,
K. J. Morse,
M. L. W. Thewalt,
S. Simmons
Abstract:
The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter interfaces which meet a subset of these demands are encouraging efforts to identify new high-performance alternatives. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advan…
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The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter interfaces which meet a subset of these demands are encouraging efforts to identify new high-performance alternatives. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advanced platform within the global integrated photonics and microelectronics industries, as well as host to record-setting long-lived spin qubits. Despite the overwhelming potential of the silicon quantum platform, the optical detection of individually addressable photon-spin interfaces in silicon has remained elusive. In this work we produce tens of thousands of individually addressable `$T$ centre' photon-spin qubits in integrated silicon photonic structures, and characterize their spin-dependent telecommunications-band optical transitions. These results unlock immediate opportunities to construct silicon-integrated, telecommunications-band quantum information networks.
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Submitted 12 March, 2021;
originally announced March 2021.
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Non-adiabatic single-electron pump in a dopant-free GaAs/AlGaAs 2DEG
Authors:
B. Buonacorsi,
F. Sfigakis,
A. Shetty,
M. C. Tam,
H. S. Kim,
S. R. Harrigan,
F. Hohls,
M. E. Reimer,
Z. R. Wasilewski,
J. Baugh
Abstract:
We have realized quantized charge pum** using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically-driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance consideri…
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We have realized quantized charge pum** using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically-driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance considering the relaxed experimental conditions: one-gate pum** in zero magnetic field and temperatures up to 5K, driven by a simple RF sine waveform. Fitting to a universal decay cascade model yields values for the figure of merit $δ$ that compare favorably to reported modulation-doped GaAs pumps operating under similar conditions. The devices reported here are already suitable for optoelectronics applications, and with further improvement could offer a route to a current standard that does not require sub-Kelvin temperatures and high magnetic fields.
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Submitted 16 September, 2021; v1 submitted 26 February, 2021;
originally announced February 2021.
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Tunable Four-Wave Mixing in AlGaAs Waveguides of Three Different Geometries
Authors:
Daniel H. G. Espinosa,
Kashif M. Awan,
Mfon Odungide,
Stephen R. Harrigan,
David R. Sanchez J.,
Ksenia Dolgaleva
Abstract:
The AlGaAs material platform has been intensively used to develop nonlinear photonic devices on-a-chip, thanks to its superior nonlinear optical properties. We propose a new AlGaAs waveguide geometry, called half-core etched, which represents a compromise between two previously studied geometries, namely the nanowire and strip-loaded waveguides, combining their best qualities. We performed tunable…
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The AlGaAs material platform has been intensively used to develop nonlinear photonic devices on-a-chip, thanks to its superior nonlinear optical properties. We propose a new AlGaAs waveguide geometry, called half-core etched, which represents a compromise between two previously studied geometries, namely the nanowire and strip-loaded waveguides, combining their best qualities. We performed tunable four-wave mixing (FWM) experiments in all three of these geometries in the telecommunications C-band (wavelengths around 1550 nm), with a pulsed pump beam and a continuous-wave (CW) signal beam. The maximum FWM peak efficiencies achieved in the nanowire, strip-loaded and half-core geometries were about -5 dB, -8 dB and -9 dB, respectively. These values are among the highest reported in AlGaAs waveguides. The signal-to-idler conversion ranges were also remarkable: 161 nm for the strip-loaded and half-core waveguides and 152 nm for the nanowire. Based on our findings, we conclude that the half-core geometry is an alternative approach to the nanowire geometry, which has been earlier deemed the most efficient geometry, to perform wavelength conversion in the spectral region above the half-bandgap. Moreover, we show that the half-core geometry exhibits fewer issues associated with multiphoton absorption than the nanowire geometry.
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Submitted 11 September, 2020; v1 submitted 9 July, 2020;
originally announced July 2020.
