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Spin-orbit fields in asymmetric (001) quantum wells
Authors:
P. S. Eldridge,
J. Hübner,
S. Oertel,
R. T. Harley,
M. Henini,
M. Oestreich
Abstract:
We measure simultaneously the in-plane electron g-factor and spin relaxation rate in a series of undoped inversion-asymmetric (001)-oriented GaAs/AlGaAs quantum wells by spin-quantum beat spectroscopy. In combination the two quantities reveal the absolute values of both the Rashba and the Dresselhaus coefficients and prove that the Rashba coefficient can be negligibly small despite huge conduction…
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We measure simultaneously the in-plane electron g-factor and spin relaxation rate in a series of undoped inversion-asymmetric (001)-oriented GaAs/AlGaAs quantum wells by spin-quantum beat spectroscopy. In combination the two quantities reveal the absolute values of both the Rashba and the Dresselhaus coefficients and prove that the Rashba coefficient can be negligibly small despite huge conduction band potential gradients which break the inversion symmetry. The negligible Rashba coefficient is a consequence of the 'isomorphism' of conduction and valence band potentials in quantum systems where the asymmetry is solely produced by alloy variations.
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Submitted 11 October, 2010;
originally announced October 2010.
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Increased color conversion efficiency in hybrid light emitting diodes utilizing non-radiative energy transfer
Authors:
S. Chanyawadee,
P. G. Lagoudakis,
R. T. Harley,
M. D. B. Charlton,
D. V. Talapin,
S. Lin
Abstract:
We fabricate a highly efficient colour conversion light emitting diode consisting of surface-patterned blue emitters and semiconductor colloidal nanocrystal quantum dots (NQDs). Electrically injected carriers in the blue emitter (donor) are efficiently transferred to the NQDs (acceptor) via nonradiative energy transfer in addition to conventional radiative energy transfer. The existence of nonra…
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We fabricate a highly efficient colour conversion light emitting diode consisting of surface-patterned blue emitters and semiconductor colloidal nanocrystal quantum dots (NQDs). Electrically injected carriers in the blue emitter (donor) are efficiently transferred to the NQDs (acceptor) via nonradiative energy transfer in addition to conventional radiative energy transfer. The existence of nonradiative energy transfer is verified by the simultaneous observation of increased donor emission decay rate, the transient transfer of carriers at the acceptor and a 2-fold enhancement of the NQD electroluminescence.
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Submitted 29 July, 2009;
originally announced July 2009.
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Absence of the Rashba effect in undoped asymmetric quantum wells
Authors:
P. S. Eldridge,
W. J. H Leyland,
J. D. Mar,
P. G. Lagoudakis,
R. Winkler,
O. Z. Karimov,
M. Henini,
D Taylor,
R. T. Phillips,
R T Harley
Abstract:
To an electron moving in free space an electric field appears as a magnetic field which interacts with and can reorient the electron spin. In semiconductor quantum wells this spin-orbit interaction seems to offer the possibility of gate-voltage control in spintronic devices but, as the electrons are subject to both ion-core and macroscopic structural potentials, this over-simple picture has lead…
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To an electron moving in free space an electric field appears as a magnetic field which interacts with and can reorient the electron spin. In semiconductor quantum wells this spin-orbit interaction seems to offer the possibility of gate-voltage control in spintronic devices but, as the electrons are subject to both ion-core and macroscopic structural potentials, this over-simple picture has lead to intense debate. For example, an externally applied field acting on the envelope of the electron wavefunction determined by the macroscopic potential, underestimates the experimentally observed spin-orbit field by many orders of magnitude while the Ehrenfest theorem suggests that it should actually be zero. Here we challenge, both experimentally and theoretically, the widely held belief that any inversion asymmetry of the macroscopic potential, not only electric field, will produce a significant spin-orbit field for electrons. This conclusion has far-reaching consequences for the design of spintronic devices while illuminating important fundamental physics.
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Submitted 30 July, 2008;
originally announced July 2008.
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Energy-Dependent Electron-Electron Scattering and Spin Dynamics in a Two Dimensional Electron Gas
Authors:
W. J. H. Leylanda,
R. T. Harley,
M. Henini,
A. J. Shields,
I. Farrer,
D. A. Ritchie
Abstract:
Measurements of spin dynamics of electrons in a degenerate two dimensional electron gas, where the Dyakonov-Perel mechanism is dominant, have been used to investigate the electron scattering time (tp*) as a function of energy near the Fermi energy. Close to the Fermi energy the spin evolution is oscillatory, indicating a quasi-collision-free regime of spin dynamics. As the energy is increased a…
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Measurements of spin dynamics of electrons in a degenerate two dimensional electron gas, where the Dyakonov-Perel mechanism is dominant, have been used to investigate the electron scattering time (tp*) as a function of energy near the Fermi energy. Close to the Fermi energy the spin evolution is oscillatory, indicating a quasi-collision-free regime of spin dynamics. As the energy is increased a transition to exponential, collision-dominated, spin decay occurs. The frequency and the value of tp* are extracted using a Monte Carlo simulation method. At the Fermi energy tp* is very close to the ensemble momentum relaxation time (tp) obtained from the electron mobility. For higher energies tp* falls quadratically, consistent with theoretical expectations for the onset of electron-electron scattering which is inhibited by the Pauli principle at the Fermi energy.
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Submitted 8 March, 2008;
originally announced March 2008.
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Non-radiative exciton energy transfer in hybrid organic-inorganic heterostructures
Authors:
S. Chanyawadee,
P. G. Lagoudakis,
R. T. Harley,
D. G. Lidzey,
M. Henini
Abstract:
Non-radiative optical energy transfer from a GaAs quantum well to a thin overlayer of an infrared organic semiconductor dye is unambiguously demonstrated. The dynamics of exciton transfer are studied in the time-domain using pump-probe spectroscopy at the donor site and fluorescence spectroscopy at the acceptor site. The effect is observed as simultaneous increase of the population decay rate at…
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Non-radiative optical energy transfer from a GaAs quantum well to a thin overlayer of an infrared organic semiconductor dye is unambiguously demonstrated. The dynamics of exciton transfer are studied in the time-domain using pump-probe spectroscopy at the donor site and fluorescence spectroscopy at the acceptor site. The effect is observed as simultaneous increase of the population decay rate at the donor and of the rise time of optical emission at the acceptor sites. The hybrid configuration under investigation provides an alternative non-radiative, non-contact pum** route to electrical carrier injection that overcomes the losses imposed by the associated low carrier mobility of organic emitters.
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Submitted 16 November, 2007;
originally announced November 2007.
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Temperature Dependence of Rashba Spin-orbit Coupling in Quantum Wells
Authors:
P. S. Eldridge,
W. J. H. Leyland,
P. G. Lagoudakis,
O. Z. Karimov,
M. Henini,
D. Taylor,
R. T. Phillips,
R. T. Harley
Abstract:
We perform an all-optical spin-dynamic measurement of the Rashba spin-orbit interaction in (110)-oriented GaAs/AlGaAs quantum wells. The crystallographic direction of quantum confinement allows us to disentangle the contributions to spin-orbit coupling from the structural inversion asymmetry (Rashba term) and the bulk inversion asymmetry. We observe an unexpected temperature dependence of the Ra…
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We perform an all-optical spin-dynamic measurement of the Rashba spin-orbit interaction in (110)-oriented GaAs/AlGaAs quantum wells. The crystallographic direction of quantum confinement allows us to disentangle the contributions to spin-orbit coupling from the structural inversion asymmetry (Rashba term) and the bulk inversion asymmetry. We observe an unexpected temperature dependence of the Rashba spin-orbit interaction strength that signifies the importance of the usually neglected higher-order terms of the Rashba coupling.
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Submitted 30 July, 2007;
originally announced July 2007.
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Oscillatory D'yakonov-Perel' spin dynamics in two dimensional electron gases
Authors:
W. J. H. Leyland,
R. T. Harley,
M. Henini,
D. Taylor,
A. J. Shields,
I. Farrer,
D. A. Ritchie
Abstract:
Optical pump-probe measurements of spin-dynamics at temperatures down to 1.5K are described for a series of (001)-oriented GaAs/AlGaAs quantum well samples containing high mobility two-dimensional electron gases (2DEGs). For well widths ranging from 5 nm to 20 nm and 2DEG sheet densities from 1.75x1011cm-2 to 3.5x1011cm-2 the evolution of a small injected spin population is found to be a damped…
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Optical pump-probe measurements of spin-dynamics at temperatures down to 1.5K are described for a series of (001)-oriented GaAs/AlGaAs quantum well samples containing high mobility two-dimensional electron gases (2DEGs). For well widths ranging from 5 nm to 20 nm and 2DEG sheet densities from 1.75x1011cm-2 to 3.5x1011cm-2 the evolution of a small injected spin population is found to be a damped oscillation rather than exponential relaxation, consistent with the quasi-collision-free regime of D'yakonov-Perel spin dynamics. A Monte Carlo simulation method is used to extract the spin-orbit-induced electron spin precession frequency |W(kF)| and electron momentum scattering time tp* at the Fermi wavevector. The spin decay time passes through a minimum at a temperature corresponding to the transition from collision-free to collision-dominated regimes and tp* is found to be close to the ensemble momentum scattering time tp obtained from Hall measurements of electron mobility. The values of |W(kF)| give the Dresselhaus (BIA) coefficient of spin-orbit interaction as a function of electron confinement energy in the quantum show, qualitatively, the behaviour expected from k.p theory.
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Submitted 27 July, 2007;
originally announced July 2007.
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Enhanced spin relaxation time due to electron-electron scattering in semiconductors
Authors:
W. J. H. Leyland,
G. H. John,
R. T. Harley,
M. M. Glazov,
E. L. Ivchenko,
D. A. Ritchie,
A. J. Shields,
M. Henini
Abstract:
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques were applied in order to study in detail the temperature-, concentration- and quantum-well-width- dependencies of the spin relaxation rate of a small photoexcit…
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We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques were applied in order to study in detail the temperature-, concentration- and quantum-well-width- dependencies of the spin relaxation rate of a small photoexcited electron population. A rapid enhancement of the spin life-time with temperature up to a maximum near the Fermi temperature of the 2DEG was demonstrated experimentally. These observations are consistent with the D'yakonov-Perel' spin relaxation mechanism controlled by electron-electron collisions. The experimental results and theoretical predictions for the spin relaxation times are in good quantitative agreement.
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Submitted 21 October, 2006;
originally announced October 2006.
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High temperature gate control of quantum well spin memory
Authors:
O. Z. Karimov,
G. H. John,
R. T. Harley,
W. H. Lau,
M. E. Flatte,
M. Henini,
R. Airey
Abstract:
Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a ten-fold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm-1 at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field-independent below 20 kV cm-1 reflecting quantum well interfac…
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Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a ten-fold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm-1 at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field-independent below 20 kV cm-1 reflecting quantum well interface asymmetry. The results indicate the achievability of voltage-gateable spin-memory time longer than 3 ns simultaneously with high electron mobility.
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Submitted 16 May, 2003;
originally announced May 2003.
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D'yakonov-Perel' spin relaxation under electron-electron collisions in n-type QWs
Authors:
M. M. Glazov,
E. L. Ivchenko,
M. A. Brand,
O. Z. Karimov,
R. T. Harley
Abstract:
The D'yakonov-Perel' spin relaxation mechanism in n-doped GaAs/AlGaAs quantum wells (QWs) has been studied both theoretically and experimentally. The temperature dependence of the spin relaxation time has been calculated for arbitrary degeneracy of the 2D electron gas. The comparison between theory and experiment shows that, in high-mobility n-doped QWs, the studied spin decoherence is controlle…
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The D'yakonov-Perel' spin relaxation mechanism in n-doped GaAs/AlGaAs quantum wells (QWs) has been studied both theoretically and experimentally. The temperature dependence of the spin relaxation time has been calculated for arbitrary degeneracy of the 2D electron gas. The comparison between theory and experiment shows that, in high-mobility n-doped QWs, the studied spin decoherence is controlled by electron-electron collisions.
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Submitted 12 May, 2003;
originally announced May 2003.
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Dynamic Nuclear Overhauser Shifts in Larmor beats from a quantum well
Authors:
A. Malinowski,
R. T. Harley
Abstract:
The significance of nuclear spin polarisation in time-resolved optical studies of III-V semiconductors is addressed. Electron Larmor beats in pump-probe reflectivity from a GaAs/AlGaAs quantum well show Overhauser shift of 0.7 T due to accumulated nuclear polarisation <I>/I=0.065. This leads to precision values of electron g-factor, elucidates nuclear spin pum** and diffusion mechanisms in qua…
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The significance of nuclear spin polarisation in time-resolved optical studies of III-V semiconductors is addressed. Electron Larmor beats in pump-probe reflectivity from a GaAs/AlGaAs quantum well show Overhauser shift of 0.7 T due to accumulated nuclear polarisation <I>/I=0.065. This leads to precision values of electron g-factor, elucidates nuclear spin pum** and diffusion mechanisms in quantum wells and informs discussion of implications for spin-electronics and transport.
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Submitted 28 October, 1999;
originally announced October 1999.
