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Showing 1–3 of 3 results for author: Hargett, T

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  1. Spin-orbit enabled quantum transport channels in a two-hole double quantum dot

    Authors: Alex Bogan, Sergei Studenikin, Marek Korkusinski, Louis Gaudreau, Jason Phoenix, Piotr Zawadzki, Andy Sachrajda, Lisa Tracy, John Reno, Terry Hargett

    Abstract: We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map out the complete spectra of the two-hole system. By performing measurements in both source-drain voltage directions, at different detunings and magnetic fields… ▽ More

    Submitted 6 April, 2021; originally announced April 2021.

    Comments: 43 pages, 14 figures

    Journal ref: Phys. Rev. B 103, 235310 (2021)

  2. Landau-Zener-Stuckelberg-Majorana interferometry of a single hole

    Authors: Alex Bogan, Sergei Studenikin, Marek Korkusinski, Louis Gaudreau, Piotr Zawadzki, Andy S. Sachrajda, Lisa Tracy, John Reno, Terry Hargett

    Abstract: We perform Landau-Zener-Stuckelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. In analogy to the electron systems, at magnetic field B=0 and high modulation frequencies we observe the photon-assisted tunneling (PAT) between dots, which smoothly evolves into the typical LZSM funnel-shaped inter… ▽ More

    Submitted 9 November, 2017; originally announced November 2017.

    Comments: 6 pages, 4 figures, and supplementary material

    Journal ref: Phys. Rev. Lett. 120, 207701 (2018)

  3. arXiv:1312.1977  [pdf, ps, other

    cond-mat.mes-hall

    Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure

    Authors: L. A. Tracy, T. W. Hargett, J. L. Reno

    Abstract: We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hol… ▽ More

    Submitted 6 December, 2013; originally announced December 2013.

    Comments: 4 pages, 4 figures, submitted for publication