Is the doped MoS2 basal plane an efficient hydrogen evolution catalyst? Calculations of voltage-dependent activation energy
Authors:
Sander Ø. Hanslin,
Hannes Jónsson,
Jaakko Akola
Abstract:
Transition metal dichalcogenides are cheap and earth-abundant candidates for the replacement of precious metals as catalyst materials. Experimental measurements of the hydrogen evolution reaction (HER), for example, have demonstrated significant electrocatalytic activity of MoS2 but there is large variation depending on preparation method. In order to gain information about the mechanism and activ…
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Transition metal dichalcogenides are cheap and earth-abundant candidates for the replacement of precious metals as catalyst materials. Experimental measurements of the hydrogen evolution reaction (HER), for example, have demonstrated significant electrocatalytic activity of MoS2 but there is large variation depending on preparation method. In order to gain information about the mechanism and active sites for HER, we have carried out calculations of the reaction and activation energy for HER at the transition metal doped basal plane of MoS2 under electrochemical conditions, i.e. including applied electrode potential and solvent effects. The calculations are based on identifying the relevant saddle points on the energy surface obtained from density functional theory within the generalized gradient approximation, and the information on energetics is used to construct voltage-dependent volcano plots. Do** with 3d-metal atoms as well as Pt is found to enhance hydrogen adsorption onto the basal plane by introducing electronic states within the band gap, and in some cases (Co, Ni, Cu, Pt) significant local symmetry breaking. The Volmer-Heyrovsky mechanism is found to be most likely and the associated energetics show considerable dopant and voltage-dependence. While the binding free energy of hydrogen can be tuned to be seemingly favorable for HER, the calculated activation energy turns out to be significant, at least 0.7 eV at a voltage of -0.5 V vs. SHE, indicating low catalytic activity of the doped basal plane. This suggests that other sites are responsible for the experimental activity, possibly edges or basal plane defects.
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Submitted 1 February, 2023; v1 submitted 3 October, 2022;
originally announced October 2022.
Light-induced Dzyaloshinskii-Moriya interactions in antiferromagnetic metals
Authors:
Sander Ø. Hanslin,
Alireza Qaiumzadeh
Abstract:
The Dzyaloshinskii-Moriya (DM) interaction plays an essential role in novel topological spintronics, and the ability to control this chiral interaction is of key importance. Develo** a general microscopic framework to compute nonequilibrium DM interactions, we theoretically show that the ac electric field component of a laser pulse induces nonequilibrium static DM interactions in an antiferromag…
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The Dzyaloshinskii-Moriya (DM) interaction plays an essential role in novel topological spintronics, and the ability to control this chiral interaction is of key importance. Develo** a general microscopic framework to compute nonequilibrium DM interactions, we theoretically show that the ac electric field component of a laser pulse induces nonequilibrium static DM interactions in an antiferromagnetic (AFM) system in the presence of relativistic spin-orbit coupling. These nonequilibrium DM interactions might even be anisotropic depending on the direction of magnetic moments and the laser pulse polarization. We further show that intense polarized laser pulses can in principle generate both classes of DM interactions, i.e., bulk-type and interfacial-type, in a magnetic system even though the crystal symmetry prohibits one of them in equilibrium. Our results reveal another aspect of rich behavior of periodically driven spin systems and the far-from-equilibrium magnetic systems.
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Submitted 21 April, 2021; v1 submitted 16 December, 2020;
originally announced December 2020.
