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Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence
Authors:
M. Čulo,
M. Basletić,
E. Tafra,
A. Hamzić,
S. Tomić,
F. Fischgrabe,
V. Moshnyaga,
B. Korin-Hamzić
Abstract:
We report the temperature and magnetic field dependence of transport properties in epitaxial films of the manganite La$_{1-x}$Ca$_{x}$MnO$_{3}$ in the overdoped region of the phase diagram for $x > 0.5$, where a charge--ordered (CO) and an antiferromagnetic (AF) phase are present. Resistivity, magnetoresistance and angular dependence of magnetoresistance were measured in the temperature interval…
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We report the temperature and magnetic field dependence of transport properties in epitaxial films of the manganite La$_{1-x}$Ca$_{x}$MnO$_{3}$ in the overdoped region of the phase diagram for $x > 0.5$, where a charge--ordered (CO) and an antiferromagnetic (AF) phase are present. Resistivity, magnetoresistance and angular dependence of magnetoresistance were measured in the temperature interval $4.2 ~\mathrm{K} < T < 300 ~\mathrm{K}$, for three concentrations $x = 0.52, 0.58$ and $0.75$ and in magnetic fields up to 5 T. The semiconductor/insulator--like behavior in zero field was observed in the entire temperature range for all three concentrations \textit{x} and the electric conduction, at lower temperatures, in the CO state obeys 3D Mott's variable--range hop** model. A huge negative magnetoresistance for $x = 0.52$ and $x = 0.58$, a metal--insulator transition for $B > 3 ~\mathrm{T}$ for $x = 0.52$ and the presence of anisotropy in magnetoresistance for $x = 0.52$ and $x = 0.58$ show the fingerprints of colossal magnetoresistance (CMR) behavior implying the existence of ferromagnetic (FM) clusters. The declining influence of the FM clusters in the CO/AF part of the phase diagram with increasing $x$ contributes to a possible explanation that a phase coexistence is the origin of the CMR phenomenon.
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Submitted 24 April, 2017;
originally announced April 2017.
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Anisotropic charge dynamics in the quantum spin-liquid candidate $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$
Authors:
M. Pinteric,
M. Culo,
O. Milat,
M. Basletic,
B. Korin-Hamzic,
E. Tafra,
A. Hamzic,
T. Ivek,
T. Peterseim,
K. Miyagawa,
K. Kanoda,
J. A. Schlueter,
M. Dressel,
S. Tomic
Abstract:
We have in detail characterized the anisotropic charge response of the dimer Mott insulator $κ$-(BEDT-TTF)$_2$\-Cu$_2$(CN)$_3$ by dc conductivity, Hall effect and dielectric spectroscopy. At room temperature the Hall coefficient is positive and close to the value expected from stoichiometry; the temperature behavior follows the dc resistivity $ρ(T)$. Within the planes the dc conductivity is well d…
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We have in detail characterized the anisotropic charge response of the dimer Mott insulator $κ$-(BEDT-TTF)$_2$\-Cu$_2$(CN)$_3$ by dc conductivity, Hall effect and dielectric spectroscopy. At room temperature the Hall coefficient is positive and close to the value expected from stoichiometry; the temperature behavior follows the dc resistivity $ρ(T)$. Within the planes the dc conductivity is well described by variable-range hop** in two dimensions; this model, however, fails for the out-of-plane direction. An unusually broad in-plane dielectric relaxation is detected below about 60 K; it slows down much faster than the dc conductivity following an Arrhenius law. At around 17 K we can identify a pronounced dielectric anomaly concomitantly with anomalous features in the mean relaxation time and spectral broadening. The out-of-plane relaxation, on the other hand, shows a much weaker dielectric anomaly; it closely follows the temperature behavior of the respective dc resistivity. At lower temperatures, the dielectric constant becomes smaller both within and perpendicular to the planes; also the relaxation levels off. The observed behavior bears features of relaxor-like ferroelectricity. Because heterogeneities impede its long-range development, only a weak tunneling-like dynamics persists at low temperatures. We suggest that the random potential and domain structure gradually emerge due to the coupling to the anion network.
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Submitted 10 October, 2014; v1 submitted 22 July, 2014;
originally announced July 2014.
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Extrinsic Spin Hall Effect Induced by Iridium Impurities in Copper
Authors:
Y. Niimi,
M. Morota,
D. H. Wei,
C. Deranlot,
M. Basletic,
A. Hamzic,
A. Fert,
Y. Otani
Abstract:
We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, $(2.1 \pm 0.6)$% throughout the concentration range between 1% and 1…
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We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, $(2.1 \pm 0.6)$% throughout the concentration range between 1% and 12%, is practically independent of temperature. These results represent a clear example of predominant skew scattering extrinsic contribution to the spin Hall effect in a nonmagnetic alloy.
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Submitted 22 March, 2011; v1 submitted 20 February, 2011;
originally announced February 2011.
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The Hall effect in the organic conductor TTF-TCNQ: Choice of geometry for accurate measurements of highly anisotropic system
Authors:
Emil Tafra,
Matija Čulo,
Mario Basletić,
Bojana Korin-Hamzić,
Amir Hamzić,
C. S. Jacobsen
Abstract:
We have measured the Hall effect on recently synthesized single crystals of quasi-one-dimensional organic conductor TTF-TCNQ, a well known charge transfer complex that has two kinds of conductive stacks: the donor (TTF) and the acceptor (TCNQ) chains. The measurements were performed in the temperature interval 30 K < T < 300 K and for several different magnetic field and current directions through…
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We have measured the Hall effect on recently synthesized single crystals of quasi-one-dimensional organic conductor TTF-TCNQ, a well known charge transfer complex that has two kinds of conductive stacks: the donor (TTF) and the acceptor (TCNQ) chains. The measurements were performed in the temperature interval 30 K < T < 300 K and for several different magnetic field and current directions through the crystal. By applying the equivalent isotropic sample (EIS) approach, we have demonstrated the importance of the choice of optimal geometry for accurate Hall effect measurements. Our results show, contrary to past belief, that the Hall coefficient does not depend on the geometry of measurements and that the Hall coefficient value is around zero in high temperature region (T > 150 K), implying that there is no dominance of either TTF or TCNQ chain. At lower temperatures, our measurements clearly prove that all three phase transitions of TTF-TCNQ could be identified from Hall effect measurements.
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Submitted 24 January, 2012; v1 submitted 25 January, 2011;
originally announced January 2011.
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Influence of do** on the Hall coefficient in Sr_{14-x}Ca_xCu_24O_41
Authors:
E. Tafra,
B. Korin-Hamzic,
M. Basletic,
A. Hamzic,
M. Dressel,
J. Akimitsu
Abstract:
We present Hall-effect measurements of two-leg ladder compounds Sr_{14-x}Ca_xCu_24O_41 (0 <= x <= 11.5) with the aim to determine the number of carriers participating in dc transport. Distribution of holes between the ladder and chain subsystems is one of the crucial questions important for understanding the physics of these compounds. Our Hall effect and resistivity measurements show typical se…
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We present Hall-effect measurements of two-leg ladder compounds Sr_{14-x}Ca_xCu_24O_41 (0 <= x <= 11.5) with the aim to determine the number of carriers participating in dc transport. Distribution of holes between the ladder and chain subsystems is one of the crucial questions important for understanding the physics of these compounds. Our Hall effect and resistivity measurements show typical semiconducting behavior for x < 11.5. However, for x=11.5, the results are completely different, and the Hall coefficient and resistivity behavior is qualitatively similar to that of high temperature copper-oxide superconductors. We have determined the effective number of carriers at room temperature and compared it to the number of holes in the ladders obtained by other experimental techniques. We propose that going from x=0 to x=11.5 less than 1 hole per formula unit is added to the ladders and is responsible for a pronounced change in resistivity with Ca do**.
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Submitted 23 October, 2008; v1 submitted 16 July, 2008;
originally announced July 2008.
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Enhanced superconductivity in Hf-base metallic glasses
Authors:
Emil Tafra,
Mario Basletic,
Ramir Ristic,
Emil Babic,
Amir Hamzic
Abstract:
Systematic study of electrical resistivity of Hf_{100-x}Fe_x (x=20,25), Hf_{100-x}Cu_x (x=30,40,50), and Ti_{65}Cu_{35} metallic glasses has been done in the temperature range 0.3 K - 290 K, and in magnetic fields B <= 5 T. All Hf-base alloys are superconducting with T_c >= 0.44 K, which is well above T_c of pure crystalline Hf (0.13 K). From the initial slopes of the upper critical fields, (dH_…
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Systematic study of electrical resistivity of Hf_{100-x}Fe_x (x=20,25), Hf_{100-x}Cu_x (x=30,40,50), and Ti_{65}Cu_{35} metallic glasses has been done in the temperature range 0.3 K - 290 K, and in magnetic fields B <= 5 T. All Hf-base alloys are superconducting with T_c >= 0.44 K, which is well above T_c of pure crystalline Hf (0.13 K). From the initial slopes of the upper critical fields, (dH_{c2}/dT)_{T_c}, and resistivities we determined the dressed electronic densities of states, N_γ(E_F), for all alloys. Both T_c and N_γ(E_F) decrease with increasing x (Fe and Cu content). The results are compared with those for corresponding Zr-base metallic glasses and ion-implanted Hf films.
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Submitted 26 September, 2008; v1 submitted 3 June, 2008;
originally announced June 2008.
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Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn
Authors:
M. Pozek,
I. Kupcic,
A. Dulcic,
A. Hamzic,
D. Paar,
M. Basletic,
E. Tafra,
G. V. M. Williams
Abstract:
Ru{1-x}Sn{x}Sr2EuCu2O8 and Ru{1-x}Sn{x}Sr2GdCu2O8 have been comprehensively studied by microwave and dc resistivity and magnetoresistivity and by the dc Hall measurements. The magnetic ordering temperature T_m is considerably reduced with increasing Sn content. However, do** with Sn leads to only slight reduction of the superconducting critical temperature T_c accompanied with the increase of…
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Ru{1-x}Sn{x}Sr2EuCu2O8 and Ru{1-x}Sn{x}Sr2GdCu2O8 have been comprehensively studied by microwave and dc resistivity and magnetoresistivity and by the dc Hall measurements. The magnetic ordering temperature T_m is considerably reduced with increasing Sn content. However, do** with Sn leads to only slight reduction of the superconducting critical temperature T_c accompanied with the increase of the upper critical field B_c2, indicating an increased disorder in the system and a reduced scattering length of the conducting holes in CuO2 layers. In spite of the increased scattering rate, the normal state resistivity and the Hall resistivity are reduced with respect to the pure compound, due to the increased number of itinerant holes in CuO2 layers, which represent the main conductivity channel. Most of the electrons in RuO2 layers are presumably localized, but the observed negative magnetoresistance and the extraordinary Hall effect lead to the conclusion that there exists a small number of itinerant electrons in RuO$_2$ layers that exhibit colossal magnetoresistance.
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Submitted 19 July, 2007;
originally announced July 2007.
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High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives
Authors:
G. Herranz,
M. Basletic,
M. Bibes,
C. Carretero,
E. Tafra,
E. Jacquet,
K. Bouzehouane,
C. Deranlot,
A. Hamzic,
J. -M. Broto,
A. Barthelemy,
A. Fert
Abstract:
We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High mobility conduction is observed at low deposition oxygen pressures (PO2 < 10^-5 mbar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experi…
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We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High mobility conduction is observed at low deposition oxygen pressures (PO2 < 10^-5 mbar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low PO2, other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics.
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Submitted 19 April, 2007;
originally announced April 2007.
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Magnetotransport of lanthanum doped RuSr2GdCu2O8 - the role of gadolinium
Authors:
M. Pozek,
A. Dulcic,
A. Hamzic,
M. Basletic,
E. Tafra,
G. V. M. Williams,
S. Kraemer
Abstract:
Strongly underdoped RuSr_1.9La_0.1GdCu_2O_8 has been comprehensively studied by dc magnetization, microwave measurements, magnetoresistivity and Hall resistivity in fields up to 9 T and temperatures down to 1.75 K. Electron do** by La reduces the hole concentration in the CuO2 planes and completely suppresses superconductivity. Microwave absorption, dc resistivity and ordinary Hall effect data…
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Strongly underdoped RuSr_1.9La_0.1GdCu_2O_8 has been comprehensively studied by dc magnetization, microwave measurements, magnetoresistivity and Hall resistivity in fields up to 9 T and temperatures down to 1.75 K. Electron do** by La reduces the hole concentration in the CuO2 planes and completely suppresses superconductivity. Microwave absorption, dc resistivity and ordinary Hall effect data indicate that the carrier concentration is reduced and a semiconductor-like temperature dependence is observed. Two magnetic ordering transitions are observed. The ruthenium sublattice orders antiferromagnetically at 155 K for low applied magnetic field and the gadolinium sublattice antiferromagnetically orders at 2.8 K. The magnetoresistivity exhibits a complicated temperature dependence due to the combination of the two magnetic orderings and spin fluctuations. It is shown that the ruthenium magnetism influences the conductivity in the RuO2 layers while the gadolinium magnetism influences the conductivity in the CuO2 layers. The magnetoresistivity is isotropic above 4 K, but it becomes anisotropic when gadolinium orders antiferromagnetically.
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Submitted 20 December, 2006;
originally announced December 2006.
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Origin and Perspectives of High Mobility in LaAlO3/SrTiO3 Structures
Authors:
G. Herranz,
M. Basletic,
M. Bibes,
C. Carretero,
E. Tafra,
E. Jacquet,
K. Bouzehouane,
C. Deranlot,
J. -L. Maurice,
A. Hamzic,
J. -P. Contour,
A. Barthelemy,
A. Fert
Abstract:
LaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological applications a full understanding of the dimensionality and origin of the conducting electronic system is crucial. To shed light on this issue, we have investigat…
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LaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological applications a full understanding of the dimensionality and origin of the conducting electronic system is crucial. To shed light on this issue, we have investigated the magnetotransport properties of a LaAlO3 layer epitaxially grown at low oxygen pressure on a TiO2-terminated (001)-SrTiO3 substrate. In agreement with recent reports, a low-temperature mobility of about 10^4 cm2/Vs has been found. We conclusively show that the electronic system is three-dimensional, excluding any interfacial confinement of carriers. We argue that the high-mobility conduction originates from the do** of SrTiO3 with oxygen vacancies and that it extends over hundreds of microns into the SrTiO3 substrate. Such high mobility SrTiO3-based heterostructures have a unique potential for electronic and spintronics devices.
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Submitted 7 June, 2006;
originally announced June 2006.
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Full oxide heterostructure combining a high-Tc diluted ferromagnet with a high-mobility conductor
Authors:
G. Herranz,
M. Basletic,
M. Bibes,
R. Ranchal,
A. Hamzic,
E. Tafra,
K. Bouzehouane,
E. Jacquet,
J. -P. Contour,
A. Barthelemy,
A. Fert
Abstract:
We report on the growth of heterostructures composed of layers of the high-Curie temperature ferromagnet Co-doped (La,Sr)TiO3 (Co-LSTO) with high-mobility SrTiO3 (STO) substrates processed at low oxygen pressure. While perpendicular spin-dependent transport measurements in STO//Co-LSTO/LAO/Co tunnel junctions demonstrate the existence of a large spin polarization in Co-LSTO, planar magnetotransp…
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We report on the growth of heterostructures composed of layers of the high-Curie temperature ferromagnet Co-doped (La,Sr)TiO3 (Co-LSTO) with high-mobility SrTiO3 (STO) substrates processed at low oxygen pressure. While perpendicular spin-dependent transport measurements in STO//Co-LSTO/LAO/Co tunnel junctions demonstrate the existence of a large spin polarization in Co-LSTO, planar magnetotransport experiments on STO//Co-LSTO samples evidence electronic mobilities as high as 10000 cm2/Vs at T = 10 K. At high enough applied fields and low enough temperatures (H < 60 kOe, T < 4 K) Shubnikov-de Haas oscillations are also observed. We present an extensive analysis of these quantum oscillations and relate them with the electronic properties of STO, for which we find large scattering rates up to ~ 10 ps. Thus, this work opens up the possibility to inject a spin-polarized current from a high-Curie temperature diluted oxide into an isostructural system with high-mobility and a large spin diffusion length.
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Submitted 21 December, 2005;
originally announced December 2005.
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Conduction anisotropy and Hall effect in the organic conductor (TMTTF)2AsF6: evidence for Luttinger liquid and charge ordering
Authors:
Bojana Korin-Hamzic,
Emil Tafra,
Mario Basletic,
Amir Hamzic,
Martin Dressel
Abstract:
We present the high-temperature (70 K < T < 300 K) resistivity anisotropy and Hall effect measurements of the quasi-one-dimensional (1D) organic conductor (TMTTF)2AsF6. The temperature variations of the resistivity are pronouncedly different for the three different directions, with metallic-like at high temperatures for the a-axis only. Above 220 K the Hall coefficient R_H is constant, positive…
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We present the high-temperature (70 K < T < 300 K) resistivity anisotropy and Hall effect measurements of the quasi-one-dimensional (1D) organic conductor (TMTTF)2AsF6. The temperature variations of the resistivity are pronouncedly different for the three different directions, with metallic-like at high temperatures for the a-axis only. Above 220 K the Hall coefficient R_H is constant, positive and strongly enhanced over the expected value; and the corresponding carrier concentration is almost 100 times lower than calculated for one hole/unit cell. Our results give evidence for the existence of a high-temperature regime above 200 K where the 1D Luttinger liquid features appear in the transport properties. Our measurements also give strong evidence of charge ordering in (TMTTF)2AsF6. At the charge-ordering transition T_{CO} \approx 100 K, R_H(T) abruptly changes its behavior, switches sign and rapidly increases with further temperature decrease.
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Submitted 6 September, 2005;
originally announced September 2005.
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Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization
Authors:
G. Herranz,
R. Ranchal,
M. Bibes,
H. Jaffres,
E. Jacquet,
J. L. Maurice,
K. Bouzehouane,
F. Wyczisk,
E. Tafra,
M. Basletic,
A. Hamzic,
C. Colliex,
J. -P. Contour,
A. Barthelemy,
A. Fert
Abstract:
We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO com…
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We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO combining high-resolution transmission electron microscopy and Auger electron spectroscopy excluded the presence of Co clusters in the Co-LSTO layer and thus, the measured ferromagnetism and high spin polarization are intrinsic properties of this DMOS. Our results argue for the DMOS approach with complex oxide materials in spintronics.
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Submitted 11 August, 2005;
originally announced August 2005.
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Magnetization reversal by injection and transfer of spin: experiments and theory
Authors:
A. Fert,
V. Cros,
J. -M. George,
J. Grollier,
H. Jaffres,
A. Hamzic,
A. Vaures,
G. Faini,
J. Ben Youssef,
H. Le Gall
Abstract:
Reversing the magnetization of a ferromagnet by spin transfer from a current, rather than by applying a magnetic field, is the central idea of an extensive current research. After a review of our experiments of current-induced magnetization reversal in Co/Cu/Co trilayered pillars, we present the model we have worked out for the calculation of the current-induced torque and the interpretation of…
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Reversing the magnetization of a ferromagnet by spin transfer from a current, rather than by applying a magnetic field, is the central idea of an extensive current research. After a review of our experiments of current-induced magnetization reversal in Co/Cu/Co trilayered pillars, we present the model we have worked out for the calculation of the current-induced torque and the interpretation of the experiments.
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Submitted 30 October, 2003;
originally announced October 2003.
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Hall resistivity in unconventional spin density wave in (TMTSF)2PF6 below T=4.2K
Authors:
M. Basletic,
B. Korin-Hamzic,
A. Hamzic,
K. Maki
Abstract:
It is well documented that SDW in (TMTSF)2PF6 undergoes another phase transition at T*\approx 4K, though the nature of the new low temperature phase is controversial. We have shown recently that the new phase is well described in terms of unconventional SDW (USDW) which modifies the quasiparticle spectrum dramatically. In this paper we show that the same model describes consistently the Hall res…
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It is well documented that SDW in (TMTSF)2PF6 undergoes another phase transition at T*\approx 4K, though the nature of the new low temperature phase is controversial. We have shown recently that the new phase is well described in terms of unconventional SDW (USDW) which modifies the quasiparticle spectrum dramatically. In this paper we show that the same model describes consistently the Hall resistivity observed in (TMTSF)2PF6.
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Submitted 9 August, 2003;
originally announced August 2003.
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Switching a spin-valve back and forth by current-induced domain wall motion
Authors:
J. Grollier,
P. Boulenc,
V. Cros,
A. Hamzic,
A. Vaures,
A. Fert,
G. Faini
Abstract:
We have studied the current-induced displacement of a domain wall (DW) in the permalloy (Py) layer of a Co/Cu/Py spin valve structure at zero and very small applied field. The displacement is in opposite direction for opposite dc currents, and the current density required to move DW is only of the order of 10^6 A/cm^2. For H = 3 Oe, a back and forth DW motion between two stable positions is obse…
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We have studied the current-induced displacement of a domain wall (DW) in the permalloy (Py) layer of a Co/Cu/Py spin valve structure at zero and very small applied field. The displacement is in opposite direction for opposite dc currents, and the current density required to move DW is only of the order of 10^6 A/cm^2. For H = 3 Oe, a back and forth DW motion between two stable positions is observed. We also discuss the effect of an applied field on the DW motion.
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Submitted 14 April, 2003;
originally announced April 2003.
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Field dependence of magnetization reversal by spin transfer
Authors:
J. Grollier,
V. Cros,
H. Jaffres,
A. Hamzic,
J. M. George,
G. Faini,
J. Ben Youssef,
H. Legall,
A. Fert
Abstract:
We analyse the effect of the applied field (Happl) on the current-driven magnetization reversal in pillar-shaped Co/Cu/Co trilayers, where we observe two different types of transition between the parallel (P) and antiparallel (AP) magnetic configurations of the Co layers. If Happl is weaker than a rather small threshold value, the transitions between P and AP are irreversible and relatively shar…
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We analyse the effect of the applied field (Happl) on the current-driven magnetization reversal in pillar-shaped Co/Cu/Co trilayers, where we observe two different types of transition between the parallel (P) and antiparallel (AP) magnetic configurations of the Co layers. If Happl is weaker than a rather small threshold value, the transitions between P and AP are irreversible and relatively sharp. For Happl exceding the threshold value, the same transitions are progressive and reversible. We show that the criteria for the stability of the P and AP states and the experimentally observed behavior can be precisely accounted for by introducing the current-induced torque of the spin transfer models in a Landau-Lifschitz-Gilbert equation. This approach also provides a good description for the field dependence of the critical currents.
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Submitted 18 November, 2002;
originally announced November 2002.
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Conduction Anisotropy, Hall Effect, and Magnetoresistance of (TMTSF)2ReO4 at High Temperatures
Authors:
Bojana Korin-Hamzic,
Emil Tafra,
Mario Basletic,
Amir Hamzic,
Gabriele Untereiner,
Martin Dressel
Abstract:
We investigated the transport properties of the quasi one-dimensional organic metal (TMTSF)2ReO4 above the anion-ordering metal-insulator transition (T_{AO} \approx 180K). The pronounced conductivity anisotropy, a small and smoothly temperature dependent Hall effect, and a small, positive and temperature dependent magnetoresistance are analyzed within the existing Fermi-liquid and non-Fermi liqu…
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We investigated the transport properties of the quasi one-dimensional organic metal (TMTSF)2ReO4 above the anion-ordering metal-insulator transition (T_{AO} \approx 180K). The pronounced conductivity anisotropy, a small and smoothly temperature dependent Hall effect, and a small, positive and temperature dependent magnetoresistance are analyzed within the existing Fermi-liquid and non-Fermi liquid models. We propose that the transport properties of quasi one-dimensional Bechgaard salts at high temperatures can be described within the Fermi liquid description.
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Submitted 23 January, 2003; v1 submitted 19 July, 2002;
originally announced July 2002.
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Switching the magnetic configuration of a spin valve by current induced domain wall motion
Authors:
J. Grollier,
D. Lacour,
V. Cros,
A. Hamzic,
A. Vaures,
A. Fert,
D. Adam,
G. Faini
Abstract:
We present experimental results on the displacement of a domain wall by injection of a dc current through the wall. The samples are 1 micron wide long stripes of a CoO/Co/Cu/NiFe classical spin valve structure.
The stripes have been patterned by electron beam lithography. A neck has been defined at 1/3 of the total length of the stripe and is a pinning center for the domain walls, as shown by…
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We present experimental results on the displacement of a domain wall by injection of a dc current through the wall. The samples are 1 micron wide long stripes of a CoO/Co/Cu/NiFe classical spin valve structure.
The stripes have been patterned by electron beam lithography. A neck has been defined at 1/3 of the total length of the stripe and is a pinning center for the domain walls, as shown by the steps of the giant magnetoresistance curves at intermediate levels (1/3 or 2/3) between the resistances corresponding to the parallel and antiparallel configurations. We show by electric transport measurements that, once a wall is trapped, it can be moved by injecting a dc current higher than a threshold current of the order of magnitude of 10^7 A/cm^2. We discuss the different possible origins of this effect, i.e. local magnetic field created by the current and/or spin transfer from spin polarized current.
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Submitted 11 June, 2002;
originally announced June 2002.
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Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8
Authors:
M. Pozek,
A. Dulcic,
D. Paar,
A. Hamzic,
M. Basletic,
E. Tafra,
G. V. M. Williams,
S. Kramer
Abstract:
Comprehensive measurements of dc and ac susceptibility, dc resistance, magnetoresistance, Hall resistivity, and microwave absorption and dispersion in fields up to 8 T have been carried out on RuSr_2GdCu_2O_8 with the aim to establish the properties of RuO_2 and CuO_2 planes. At ~130 K, where the magnetic order develops in the RuO_2 planes, one observes a change in the slope of dc resistance, ch…
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Comprehensive measurements of dc and ac susceptibility, dc resistance, magnetoresistance, Hall resistivity, and microwave absorption and dispersion in fields up to 8 T have been carried out on RuSr_2GdCu_2O_8 with the aim to establish the properties of RuO_2 and CuO_2 planes. At ~130 K, where the magnetic order develops in the RuO_2 planes, one observes a change in the slope of dc resistance, change in the sign of magnetoresistance, and the appearance of an extraordinary Hall effect. These features indicate that the RuO_2 planes are conducting. A detailed analysis of the ac susceptibility and microwave data on both, ceramic and powder samples show that the penetration depth remains frequency dependent and larger than the London penetration depth even at low temperatures. We conclude that the conductivity in the RuO_2 planes remains normal even when superconducting order is developed in the CuO_2 planes below \~45 K. Thus, experimental evidence is provided in support of theoretical models which base the coexistence of superconductivity and magnetic order on decoupled CuO_2 and RuO_2 planes.
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Submitted 20 December, 2001;
originally announced December 2001.
