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Interference dislocations in condensate of indirect excitons
Authors:
J. R. Leonard,
Lunhui Hu,
A. A. High,
A. T. Hammack,
Congjun Wu,
L. V. Butov,
K. L. Campman,
A. C. Gossard
Abstract:
Phase singularities in quantum states play a significant role both in the state properties and in the transition between the states. For instance, a transition to two-dimensional superfluid state is governed by pairing of vortices and, in turn, unpaired vortices can cause dissipations for particle fluxes. Vortices and other phase defects can be revealed by characteristic features in interference p…
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Phase singularities in quantum states play a significant role both in the state properties and in the transition between the states. For instance, a transition to two-dimensional superfluid state is governed by pairing of vortices and, in turn, unpaired vortices can cause dissipations for particle fluxes. Vortices and other phase defects can be revealed by characteristic features in interference patterns produced by the quantum system. We present dislocation-like phase singularities in interference patterns in a condensate of indirect excitons measured by shift-interferometry. We show that the observed dislocations in interference patterns are not associated with conventional phase defects: neither with vortices, nor with polarization vortices, nor with half-vortices, nor with skyrmions, nor with half-skyrmions. We present the origin of these new phase singularities in condensate interference patterns: the observed interference dislocations originate from converging of the condensate matter waves propagating from different sources.
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Submitted 17 October, 2019; v1 submitted 14 October, 2019;
originally announced October 2019.
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Predicting Scattering Scanning Near-field Optical Microscopy of Mass-produced Plasmonic Devices
Authors:
Lauren M. Otto,
Stanley P. Burgos,
Matteo Staffaroni,
Shen Ren,
Ozgun Suzer,
Barry C. Stipe,
Paul D. Ashby,
Aeron T. Hammack
Abstract:
Scattering scanning near-field optical microscopy enables optical imaging and characterization of plasmonic devices with nanometer-scale resolution well below the diffraction limit. This technique enables developers to probe and understand the waveguide-coupled plasmonic antenna in as-fabricated heat-assisted magnetic recording heads. In order validate and predict results and to extract informatio…
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Scattering scanning near-field optical microscopy enables optical imaging and characterization of plasmonic devices with nanometer-scale resolution well below the diffraction limit. This technique enables developers to probe and understand the waveguide-coupled plasmonic antenna in as-fabricated heat-assisted magnetic recording heads. In order validate and predict results and to extract information from experimental measurements that is physically comparable to simulations, a model was developed to translate the simulated electric field into expected near-field measurements using physical parameters specific to scattering scanning near-field optical microscopy physics. The methods used in this paper prove that scattering scanning near-field optical microscopy can be used to determine critical sub-diffraction-limited dimensions of optical field confinement, which is a crucial metrology requirement for the future of nano-optics, semiconductor photonic devices, and biological sensing where the near-field character of light is fundamental to device operation.
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Submitted 27 March, 2018; v1 submitted 14 February, 2018;
originally announced February 2018.
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Pancharatnam-Berry phase in condensate of indirect excitons
Authors:
J. R. Leonard,
A. A. High,
A. T. Hammack,
M. M. Fogler,
L. V. Butov,
K. L. Campman,
A. C. Gossard
Abstract:
We report on the observation of the Pancharatnam-Berry phase in a condensate of indirect excitons (IXs) in a GaAs coupled quantum well structure. The Pancharatnam-Berry phase leads to phase shifts of interference fringes in IX interference patterns. Correlations are found between the phase shifts, polarization pattern of IX emission, and onset of IX spontaneous coherence. The Pancharatnam-Berry ph…
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We report on the observation of the Pancharatnam-Berry phase in a condensate of indirect excitons (IXs) in a GaAs coupled quantum well structure. The Pancharatnam-Berry phase leads to phase shifts of interference fringes in IX interference patterns. Correlations are found between the phase shifts, polarization pattern of IX emission, and onset of IX spontaneous coherence. The Pancharatnam-Berry phase is acquired due to coherent spin precession in IX condensate. The effect of the Pancharatnam-Berry phase on the IX phase pattern is described in terms of an associated momentum.
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Submitted 2 September, 2017;
originally announced September 2017.
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Pattern Formation in the Exciton Inner Ring
Authors:
M. Remeika,
A. T. Hammack,
S. Poltavtsev,
L. V. Butov,
J. Wilkes,
A. L. Ivanov,
K. L. Campman,
M. Hanson,
A. C. Gossard
Abstract:
We report on the spatially separated pump-probe study of indirect excitons in the inner ring in the exciton emission pattern. A pump laser beam generates the inner ring and a weaker probe laser beam is positioned in the inner ring. The probe beam is found to suppress the exciton emission intensity in the ring. We also report on the inner ring fragmentation and formation of multiple rings in the in…
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We report on the spatially separated pump-probe study of indirect excitons in the inner ring in the exciton emission pattern. A pump laser beam generates the inner ring and a weaker probe laser beam is positioned in the inner ring. The probe beam is found to suppress the exciton emission intensity in the ring. We also report on the inner ring fragmentation and formation of multiple rings in the inner ring region. These features are found to originate from a weak spatial modulation of the excitation beam intensity in the inner ring region. The modulation of exciton emission intensity anti-correlates with the modulation of the laser excitation intensity. The three phenomena - inner ring fragmentation, formation of multiple rings in the inner ring region, and emission suppression by a weak probe laser beam - have a common feature: a reduction of exciton emission intensity in the region of enhanced laser excitation. This effect is explained in terms of exciton transport and thermalization.
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Submitted 18 April, 2013;
originally announced April 2013.
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Spin currents in a coherent exciton gas
Authors:
A. A. High,
A. T. Hammack,
J. R. Leonard,
Sen Yang,
L. V. Butov,
T. Ostatnicky,
M. Vladimirova,
A. V. Kavokin,
T. C. H. Liew,
K. L. Campman,
A. C. Gossard
Abstract:
Spin currents and spin textures are observed in a coherent gas of indirect excitons. Applied magnetic fields bend the spin current trajectories and transform patterns of linear polarization from helical to spiral and patterns of circular polarization from four-leaf to bell-like-with-inversion.
Spin currents and spin textures are observed in a coherent gas of indirect excitons. Applied magnetic fields bend the spin current trajectories and transform patterns of linear polarization from helical to spiral and patterns of circular polarization from four-leaf to bell-like-with-inversion.
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Submitted 15 February, 2013;
originally announced February 2013.
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Spontaneous Coherence in a Cold Exciton Gas
Authors:
Alexander A. High,
Jason R. Leonard,
Aaron T. Hammack,
Michael M. Fogler,
Leonid V. Butov,
Alexey V. Kavokin,
Kenneth L. Campman,
Arthur C. Gossard
Abstract:
Excitons, bound pairs of electrons and holes, form a model system to explore the quantum physics of cold bosons in solids. Cold exciton gases can be realized in a system of indirect excitons, which can cool down below the temperature of quantum degeneracy due to their long lifetimes. Here, we report on the measurement of spontaneous coherence in a gas of indirect excitons. We found that extended s…
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Excitons, bound pairs of electrons and holes, form a model system to explore the quantum physics of cold bosons in solids. Cold exciton gases can be realized in a system of indirect excitons, which can cool down below the temperature of quantum degeneracy due to their long lifetimes. Here, we report on the measurement of spontaneous coherence in a gas of indirect excitons. We found that extended spontaneous coherence of excitons emerges in the region of the macroscopically ordered exciton state and in the region of vortices of linear polarization. The coherence length in these regions is much larger than in a classical gas, indicating a coherent state with a much narrower than classical exciton distribution in momentum space, characteristic of a condensate. We also observed phase singularities in the coherent exciton gas. Extended spontaneous coherence and phase singularities emerge when the exciton gas is cooled below a few Kelvin.
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Submitted 22 September, 2011; v1 submitted 1 September, 2011;
originally announced September 2011.
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Spin Texture in a Cold Exciton Gas
Authors:
A. A. High,
A. T. Hammack,
J. R. Leonard,
Sen Yang,
L. V. Butov,
T. Ostatnicky,
A. V. Kavokin,
A. C. Gossard
Abstract:
We report on the observation of a spin texture in a cold exciton gas in a GaAs/AlGaAs coupled quantum well structure. The spin texture is observed around the exciton rings. The observed phenomena include: a ring of linear polarization, a vortex of linear polarization with polarization perpendicular to the radial direction, an anisotropy in the exciton flux, a skew of the exciton fluxes in orthogon…
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We report on the observation of a spin texture in a cold exciton gas in a GaAs/AlGaAs coupled quantum well structure. The spin texture is observed around the exciton rings. The observed phenomena include: a ring of linear polarization, a vortex of linear polarization with polarization perpendicular to the radial direction, an anisotropy in the exciton flux, a skew of the exciton fluxes in orthogonal circular polarizations and a corresponding four-leaf pattern of circular polarization, a periodic spin texture, and extended exciton coherence in the region of the polarization vortex. The data indicate a transport regime where the spin polarization is locked to the direction of particle propagation and scattering is suppressed.
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Submitted 23 February, 2012; v1 submitted 1 March, 2011;
originally announced March 2011.
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Electrostatic Conveyer for Excitons
Authors:
A. G. Winbow,
J. R. Leonard,
M. Remeika,
Y. Y. Kuznetsova,
A. A. High,
A. T. Hammack,
L. V. Butov,
J. Wilkes,
A. A. Guenther,
A. L. Ivanov,
M. Hanson,
A. C. Gossard
Abstract:
We report on the study of indirect excitons in moving lattices - conveyers created by a set of AC voltages applied to the electrodes on the sample surface. The wavelength of this moving lattice is set by the electrode periodicity, the amplitude is controlled by the applied voltage, and the velocity is controlled by the AC frequency. We observed the dynamical localization-delocalization transition…
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We report on the study of indirect excitons in moving lattices - conveyers created by a set of AC voltages applied to the electrodes on the sample surface. The wavelength of this moving lattice is set by the electrode periodicity, the amplitude is controlled by the applied voltage, and the velocity is controlled by the AC frequency. We observed the dynamical localization-delocalization transition for excitons in the conveyers and measured its dependence on the exciton density and conveyer amplitude and velocity. We considered a model for exciton transport via conveyers. The theoretical simulations are in agreement with the experimental data.
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Submitted 25 February, 2011;
originally announced February 2011.
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Excitonic switches at 100 K temperatures
Authors:
G. Grosso,
J. Graves,
A. T. Hammack,
A. A. High,
L. V. Butov,
M. Hanson,
A. C. Gossard
Abstract:
Photonic and optoelectronic devices may offer the opportunity to realize efficient signal processing at speeds higher than in conventional electronic devices. Switches form the building blocks for circuits and fast photonic switches have been realized [1,2,3,4,5,6]. Recently, proof of principle of exciton optoelectronic devices was demonstrated [7,8]. Potential advantages of excitonic devices in…
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Photonic and optoelectronic devices may offer the opportunity to realize efficient signal processing at speeds higher than in conventional electronic devices. Switches form the building blocks for circuits and fast photonic switches have been realized [1,2,3,4,5,6]. Recently, proof of principle of exciton optoelectronic devices was demonstrated [7,8]. Potential advantages of excitonic devices include high operation and interconnection speed, small dimensions, and the opportunity to combine many elements into integrated circuits. Here, we demonstrate experimental proof of principle for the operation of excitonic switching devices at temperatures around 100 K. The devices are based on an AlAs/GaAs coupled quantum well structure and include the exciton optoelectronic transistor (EXOT), the excitonic bridge modulator (EXBM), and the excitonic pinch-off modulator (EXPOM). This is a two orders of magnitude increase in the operation temperature compared to the earlier devices, where operation was demonstrated at 1.5 K [7,8].
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Submitted 7 October, 2009; v1 submitted 3 October, 2009;
originally announced October 2009.
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Kinetics of the inner ring in the exciton emission pattern in GaAs coupled quantum wells
Authors:
A. T. Hammack,
L. V. Butov,
J. Wilkes,
L. Mouchliadis,
E. A. Muljarov,
A. L. Ivanov,
A. C. Gossard
Abstract:
We report on the kinetics of the inner ring in the exciton emission pattern. The formation time of the inner ring following the onset of the laser excitation is found to be about 30 ns. The inner ring was also found to disappear within 4 ns after the laser termination. The latter process is accompanied by a jump in the photoluminescence (PL) intensity. The spatial dependence of the PL-jump indic…
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We report on the kinetics of the inner ring in the exciton emission pattern. The formation time of the inner ring following the onset of the laser excitation is found to be about 30 ns. The inner ring was also found to disappear within 4 ns after the laser termination. The latter process is accompanied by a jump in the photoluminescence (PL) intensity. The spatial dependence of the PL-jump indicates that the excitons outside of the region of laser excitation, including the inner ring region, are efficiently cooled to the lattice temperature even during the laser excitation. The ring formation and disappearance are explained in terms of exciton transport and cooling.
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Submitted 3 September, 2009;
originally announced September 2009.
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Collection of indirect excitons in a diamond-shaped electrostatic trap
Authors:
A. A. High,
A. K. Thomas,
G. Grosso,
M. Remeika,
A. T. Hammack,
A. D. Meyertholen,
M. M. Fogler,
L. V. Butov,
M. Hanson,
A. C. Gossard
Abstract:
We report on the principle and realization of a new trap for excitons -- the diamond electrostatic trap -- which uses a single electrode to create a confining potential for excitons. We also create elevated diamond traps which permit evaporative cooling of the exciton gas. We observe collection of excitons towards the trap center with increasing exciton density. This effect is due to screening o…
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We report on the principle and realization of a new trap for excitons -- the diamond electrostatic trap -- which uses a single electrode to create a confining potential for excitons. We also create elevated diamond traps which permit evaporative cooling of the exciton gas. We observe collection of excitons towards the trap center with increasing exciton density. This effect is due to screening of disorder in the trap by the excitons. As a result, the diamond trap behaves as a smooth parabolic potential which realizes a cold and dense exciton gas at the trap center.
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Submitted 3 June, 2009;
originally announced June 2009.
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Localization-Delocalization Transition of Indirect Excitons in Lateral Electrostatic Lattices
Authors:
M. Remeika,
J. C. Graves,
A. T. Hammack,
A. D. Meyertholen,
M. M. Fogler,
L. V. Butov,
M. Hanson,
A. C. Gossard
Abstract:
We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results a…
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We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results are consistent with the model, which attributes the LDT to the interaction-induced percolation of the exciton gas through the external potential. We also discuss applications of the lattice potentials for estimating the strength of disorder and exciton interaction.
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Submitted 9 January, 2009;
originally announced January 2009.
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Effect of spatial resolution on the estimates of the coherence length of excitons in quantum wells
Authors:
M. M. Fogler,
Sen Yang,
A. T. Hammack,
L. V. Butov,
A. C. Gossard
Abstract:
We evaluate the effect of diffraction-limited resolution of the optical system on the estimates of the coherence length of 2D excitons deduced from the interferometric study of the exciton emission. The results are applied for refining our earlier estimates of the coherence length of a cold gas of indirect excitons in coupled quantum wells [S. Yang et al., Phys. Rev. Lett. 97, 187402(2006)]. We…
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We evaluate the effect of diffraction-limited resolution of the optical system on the estimates of the coherence length of 2D excitons deduced from the interferometric study of the exciton emission. The results are applied for refining our earlier estimates of the coherence length of a cold gas of indirect excitons in coupled quantum wells [S. Yang et al., Phys. Rev. Lett. 97, 187402(2006)]. We show that the apparent coherence length is well approximated by the quadratic sum of the actual exciton coherence length and the diffraction correction given by the conventional Abbe limit divided by 3.14. In practice, accounting for diffraction is necessary only when the coherence length is smaller than about one wavelength. The earlier conclusions regarding the strong enhancement of the exciton coherence length at low temperatures remain intact.
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Submitted 7 June, 2008; v1 submitted 16 April, 2008;
originally announced April 2008.
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Kinetics of indirect excitons in the optically-induced exciton trap
Authors:
A. T. Hammack,
L. V. Butov,
L. Mouchliadis,
A. L. Ivanov,
A. C. Gossard
Abstract:
We report on the kinetics of a low-temperature gas of indirect excitons in the optically-induced exciton trap. The excitons in the region of laser excitation are found to rapidly -- within 4 ns -- cool to the lattice temperature T = 1.4 K, while the excitons at the trap center are found to be cold -- essentially at the lattice temperature -- even during the excitation pulse. The loading time of…
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We report on the kinetics of a low-temperature gas of indirect excitons in the optically-induced exciton trap. The excitons in the region of laser excitation are found to rapidly -- within 4 ns -- cool to the lattice temperature T = 1.4 K, while the excitons at the trap center are found to be cold -- essentially at the lattice temperature -- even during the excitation pulse. The loading time of excitons to the trap center is found to be about 40 ns, longer than the cooling time yet shorter than the lifetime of the indirect excitons. The observed time hierarchy is favorable for creating a dense and cold exciton gas in optically-induced traps and for in situ control of the gas by varying the excitation profile in space and time before the excitons recombine.
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Submitted 28 June, 2007;
originally announced June 2007.
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The Interaction in the Macroscopically Ordered Exciton State
Authors:
Sen Yang,
A. V. Mintsev,
A. T. Hammack,
L. V. Butov,
A. C. Gossard
Abstract:
The macroscopically ordered exciton state (MOES) - a periodic array of beads with spatial order on a macroscopic length - appears in the external exciton rings at low temperatures below a few Kelvin. Here, we report on the experimental study of the interaction in the MOES. The exciton PL energy varies in concert with the intensity along the circumference of the ring, with the largest energy foun…
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The macroscopically ordered exciton state (MOES) - a periodic array of beads with spatial order on a macroscopic length - appears in the external exciton rings at low temperatures below a few Kelvin. Here, we report on the experimental study of the interaction in the MOES. The exciton PL energy varies in concert with the intensity along the circumference of the ring, with the largest energy found in the brightest regions. This shows that the MOES is characterized by the repulsive interaction and is not driven by the attractive interaction.
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Submitted 16 August, 2006; v1 submitted 16 August, 2006;
originally announced August 2006.
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Coherence Length of Cold Exciton Gases in Coupled Quantum Wells
Authors:
Sen Yang,
A. T. Hammack,
M. M. Fogler,
L. V. Butov,
A. C. Gossard
Abstract:
A Mach-Zehnder interferometer with spatial and spectral resolution was used to probe spontaneous coherence in cold exciton gases, which are implemented experimentally in the ring of indirect excitons in coupled quantum wells. A strong enhancement of the exciton coherence length is observed at temperatures below a few Kelvin. The increase of the coherence length is correlated with the macroscopic…
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A Mach-Zehnder interferometer with spatial and spectral resolution was used to probe spontaneous coherence in cold exciton gases, which are implemented experimentally in the ring of indirect excitons in coupled quantum wells. A strong enhancement of the exciton coherence length is observed at temperatures below a few Kelvin. The increase of the coherence length is correlated with the macroscopic spatial ordering of excitons.
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Submitted 27 June, 2006;
originally announced June 2006.
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Trap** of Cold Excitons with Laser Light
Authors:
A. T. Hammack,
M. Griswold,
L. V. Butov,
L. E. Smallwood,
A. L. Ivanov,
A. C. Gossard
Abstract:
Optical trap** and manipulation of neutral particles has led to a variety of experiments from stretching DNA-molecules to trap** and cooling of neutral atoms. An exciting recent outgrowth of the technique is an experimental implementation of atom Bose-Einstein condensation. In this paper, we propose and demonstrate laser induced trap** for a new system--a gas of excitons in quantum well st…
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Optical trap** and manipulation of neutral particles has led to a variety of experiments from stretching DNA-molecules to trap** and cooling of neutral atoms. An exciting recent outgrowth of the technique is an experimental implementation of atom Bose-Einstein condensation. In this paper, we propose and demonstrate laser induced trap** for a new system--a gas of excitons in quantum well structures. We report on the trap** of a highly degenerate Bose gas of excitons in laser induced traps.
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Submitted 22 March, 2006;
originally announced March 2006.
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Origin of the inner ring in photoluminescence patterns of quantum well excitons
Authors:
A. L. Ivanov,
L. E. Smallwood,
A. T. Hammack,
Sen Yang,
L. V. Butov,
A. C. Gossard
Abstract:
In order to explain and model the inner ring in photoluminescence (PL) patterns of indirect excitons in GaAs/AlGaAs quantum wells (QWs), we develop a microscopic approach formulated in terms of coupled nonlinear equations for the diffusion, thermalization and optical decay of the particles. The origin of the inner ring is unambiguously identified: it is due to cooling of indirect excitons in the…
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In order to explain and model the inner ring in photoluminescence (PL) patterns of indirect excitons in GaAs/AlGaAs quantum wells (QWs), we develop a microscopic approach formulated in terms of coupled nonlinear equations for the diffusion, thermalization and optical decay of the particles. The origin of the inner ring is unambiguously identified: it is due to cooling of indirect excitons in their propagation from the excitation spot. We infer that in our high-quality structures the in-plane diffusion coefficient is about 10-30cm^2/s and the amplitude of the disorder potential is about 0.45meV.
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Submitted 5 September, 2005;
originally announced September 2005.
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Excitons in Electrostatic Traps
Authors:
A. T. Hammack,
N. A. Gippius,
G. O. Andreev,
L. V. Butov,
M. Hanson,
A. C. Gossard
Abstract:
We consider in-plane electrostatic traps for indirect excitons in coupled quantum wells, where the traps are formed by a laterally modulated gate voltage. An intrinsic obstacle for exciton confinement in electrostatic traps is an in-plane electric field that can lead to exciton dissociation. We propose a design to suppress the in-plane electric field and, at the same time, to effectively confine…
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We consider in-plane electrostatic traps for indirect excitons in coupled quantum wells, where the traps are formed by a laterally modulated gate voltage. An intrinsic obstacle for exciton confinement in electrostatic traps is an in-plane electric field that can lead to exciton dissociation. We propose a design to suppress the in-plane electric field and, at the same time, to effectively confine excitons in the electrostatic traps. We present calculations for various classes of electrostatic traps and experimental proof of principle for trap** of indirect excitons in electrostatic traps.
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Submitted 1 April, 2005;
originally announced April 2005.
