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Contact effects in polymer field-effect transistors
Authors:
D. Natelson,
B. H. Hamadani,
J. W. Ciszek,
D. A. Corley,
J. M. Tour
Abstract:
Contact resistances often contribute significantly to the overall device resistance in organic field-effect transistors (OFETs). Understanding charge injection at the metal-organic interface is critical to optimizing OFET device performance. We have performed a series of experiments using bottom-contact poly(3-hexylthiophene) (P3HT) OFETs in the shallow channel limit to examine the injection pro…
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Contact resistances often contribute significantly to the overall device resistance in organic field-effect transistors (OFETs). Understanding charge injection at the metal-organic interface is critical to optimizing OFET device performance. We have performed a series of experiments using bottom-contact poly(3-hexylthiophene) (P3HT) OFETs in the shallow channel limit to examine the injection process. When contacts are ohmic we find that contact resistivity is inversely proportional to carrier mobility, consistent with diffusion-limited injection. However, data from devices with other electrode materials indicate that this simple picture is inadequate to describe contacts with significant barriers. A generalized transmission line method allows the analysis of nonohmic contacts, and we find reasonable agreement with a model for injection that accounts for the hop** nature of conduction in the polymer. Variation of the (unintentional) dopant concentration in the P3HT can significantly alter the injection process via changes in metal-organic band alignment. At very low do** levels, transport suggests the formation of a barrier at the Au/P3HT interface, while Pt/P3HT contacts remain ohmic with comparatively low resistance. We recently observed that self-assembled monolayers on the metal source/drain electrodes can significantly decrease contact resistance and maintain ohmic conduction under conditions that would result in nonohmic, high resistance contacts to untreated electrodes. Finally, we discuss measurements on extremely short channel devices, in the initial steps toward examining transport through individual polymer chains.
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Submitted 27 July, 2006;
originally announced July 2006.
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Controlling charge injection in organic field-effect transistors using self-assembled monolayers
Authors:
B. H. Hamadani,
D. A. Corley,
J. W. Ciszek,
J. M. Tour,
D. Natelson
Abstract:
We have studied charge injection across the metal/organic semiconductor interface in bottom-contact poly(3-hexylthiophene) (P3HT) field-effect transistors, with Au source and drain electrodes modified by self-assembled monolayers (SAMs) prior to active polymer deposition. By using the SAM to engineer the effective Au work function, we markedly affect the charge injection process. We systematical…
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We have studied charge injection across the metal/organic semiconductor interface in bottom-contact poly(3-hexylthiophene) (P3HT) field-effect transistors, with Au source and drain electrodes modified by self-assembled monolayers (SAMs) prior to active polymer deposition. By using the SAM to engineer the effective Au work function, we markedly affect the charge injection process. We systematically examine the contact resistivity and intrinsic channel mobility, and show that chemically increasing the injecting electrode work function significantly improves hole injection relative to untreated Au electrodes.
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Submitted 24 May, 2006;
originally announced May 2006.
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Do** dependent charge injection and band alignment in organic field-effect transistors
Authors:
B. H. Hamadani,
H. Ding,
Y. Hao,
D. Natelson
Abstract:
We have studied metal/organic semiconductor charge injection in poly(3-hexylthiophene) (P3HT) field-effect transistors with Pt and Au electrodes as a function of annealing in vacuum. At low impurity dopant densities, Au/P3HT contact resistances increase and become nonohmic. In contrast, Pt/P3HT contacts remain ohmic even at far lower do**. Ultraviolet photoemission spectroscopy (UPS) reveals t…
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We have studied metal/organic semiconductor charge injection in poly(3-hexylthiophene) (P3HT) field-effect transistors with Pt and Au electrodes as a function of annealing in vacuum. At low impurity dopant densities, Au/P3HT contact resistances increase and become nonohmic. In contrast, Pt/P3HT contacts remain ohmic even at far lower do**. Ultraviolet photoemission spectroscopy (UPS) reveals that metal/P3HT band alignment shifts dramatically as samples are dedoped, leading to an increased injection barrier for holes, with a greater shift for Au/P3HT. These results demonstrate that do** can drastically alter band alignment and the charge injection process at metal/organic interfaces.
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Submitted 14 December, 2005;
originally announced December 2005.
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Extracting contact effects in organic field-effect transistors
Authors:
B. H. Hamadani,
D. Natelson
Abstract:
Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic field-effect transistors. These effects are more prevalent in short channel length devices and therefore should not be ignored when examining intrinsic properties such as the mobility and its dependence on temperature or gate voltage…
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Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic field-effect transistors. These effects are more prevalent in short channel length devices and therefore should not be ignored when examining intrinsic properties such as the mobility and its dependence on temperature or gate voltage. Here we outline a general procedure to extract contact current-voltage characteristics and the true channel mobility from the transport characteristics in bottom contact poly(3-hexylthiophene) field-effect transistors, for both Ohmic and nonlinear charge injection, over a broad range of temperatures and gate voltages. Distinguishing between contact and channel contributions in bottom contact OFETs is an important step toward improved understanding and modeling of these devices.
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Submitted 3 May, 2005;
originally announced May 2005.
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Nonlinear charge injection in organic field-effect transistors
Authors:
B. H. Hamadani,
D. Natelson
Abstract:
Transport properties of a series of poly(3-hexylthiophene) organic field effect transistors with Cr, Cu and Au source/drain electrodes were examined over a broad temperature range. The current-voltage characteristics of the injecting contacts are extracted from the dependence of conductance on channel length. With reasonable parameters, a model of hop** injection into a disordered density of l…
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Transport properties of a series of poly(3-hexylthiophene) organic field effect transistors with Cr, Cu and Au source/drain electrodes were examined over a broad temperature range. The current-voltage characteristics of the injecting contacts are extracted from the dependence of conductance on channel length. With reasonable parameters, a model of hop** injection into a disordered density of localized states, with emphasis on the primary injection event, agrees well with the field and the temperature dependence of the data over a broad range of temperatures and gate voltages.
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Submitted 11 October, 2004;
originally announced October 2004.
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Gated nonlinear transport in organic polymer field effect transistors
Authors:
B. H. Hamadani,
D. Natelson
Abstract:
We measure hole transport in poly(3-hexylthiophene) field effect transistors with channel lengths from 3 $μ$m down to 200 nm, from room temperature down to 10 K. Near room temperature effective mobilities inferred from linear regime transconductance are strongly dependent on temperature, gate voltage, and source-drain voltage. As $T$ is reduced below 200 K and at high source-drain bias, we find…
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We measure hole transport in poly(3-hexylthiophene) field effect transistors with channel lengths from 3 $μ$m down to 200 nm, from room temperature down to 10 K. Near room temperature effective mobilities inferred from linear regime transconductance are strongly dependent on temperature, gate voltage, and source-drain voltage. As $T$ is reduced below 200 K and at high source-drain bias, we find transport becomes highly nonlinear and is very strongly modulated by the gate. We consider whether this nonlinear transport is contact limited or a bulk process by examining the length dependence of linear conduction to extract contact and channel contributions to the source-drain resistance. The results indicate that these devices are bulk-limited at room temperature, and remain so as the temperature is lowered. The nonlinear conduction is consistent with a model of Poole-Frenkel-like hop** mechanism in the space-charge limited current regime. Further analysis within this model reveals consistency with a strongly energy dependent density of (localized) valence band states, and a crossover from thermally activated to nonthermal hop** below 30 K.
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Submitted 7 December, 2003;
originally announced December 2003.
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Temperature-dependent contact resistances in high-quality polymer field-effect transistors
Authors:
B. H. Hamadani,
D. Natelson
Abstract:
Contact resistances between organic semiconductors and metals can dominate the transport properties of electronic devices incorporating such materials. We report measurements of the parasitic contact resistance and the true channel resistance in bottom contact poly(3-hexylthiophene) (P3HT) field-effect transistors with channel lengths from 400 nm up to 40 $μ$m, from room temperature down to 77 K…
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Contact resistances between organic semiconductors and metals can dominate the transport properties of electronic devices incorporating such materials. We report measurements of the parasitic contact resistance and the true channel resistance in bottom contact poly(3-hexylthiophene) (P3HT) field-effect transistors with channel lengths from 400 nm up to 40 $μ$m, from room temperature down to 77 K. For fixed gate voltage, the ratio of contact to channel resistance decreases with decreasing temperature. We compare this result with a recent model for metal-organic semiconductor contacts. Mobilities corrected for this contact resistance can approach 1 cm$^{2}$/Vs at room temperature and high gate voltages.
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Submitted 7 December, 2003;
originally announced December 2003.
