A singlet-triplet hole-spin qubit in MOS silicon
Authors:
S. D. Liles,
D. J. Halverson,
Z. Wang,
A. Shamim,
R. S. Eggli,
I. K. **,
J. Hillier,
K. Kumar,
I. Vorreiter,
M. Rendell,
J. H. Huang,
C. C. Escott,
F. E. Hudson,
W. H. Lim,
D. Culcer,
A. S. Dzurak,
A. R. Hamilton
Abstract:
Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We observe rapid qubit control with sing…
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Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We observe rapid qubit control with singlet-triplet oscillations up to 400 MHz. The qubit exhibits promising coherence, with a maximum dephasing time of 600 ns, which is enhanced to 1.3 us using refocusing techniques. We investigate the magnetic field anisotropy of the eigenstates, and determine a magnetic field orientation to improve the qubit initialisation fidelity. These results present a step forward for spin qubit technology, by implementing a high quality singlet-triplet hole-spin qubit in planar architecture suitable for scaling up to 2D arrays of coupled qubits.
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Submitted 14 October, 2023;
originally announced October 2023.
