Showing 1–6 of 6 results for author: Hallam, T

Low-temperature synthesis and electrocatalytic application of large-area PtTe2 thin films

Authors: John B. Mc Manus, Dominik V. Horvath, Michelle P. Browne, Conor P. Cullen, Graeme Cunningham, Toby Hallam, Kuanysh Zhussupbekov, Daragh Mullarkey, Cormac Ó Coileáin, Igor V. Shvets, Martin Pumera, Georg S. Duesberg, Niall McEvoy

Abstract: The synthesis of transition metal dichalcogenides (TMDs) has been a primary focus for 2D nanomaterial research over the last 10 years, however, only a small fraction of this research has been concentrated on transition metal ditellurides. In particular, nanoscale platinum ditelluride (PtTe2) has rarely been investigated, despite its potential applications in catalysis, photonics and spintronics. O… ▽ More The synthesis of transition metal dichalcogenides (TMDs) has been a primary focus for 2D nanomaterial research over the last 10 years, however, only a small fraction of this research has been concentrated on transition metal ditellurides. In particular, nanoscale platinum ditelluride (PtTe2) has rarely been investigated, despite its potential applications in catalysis, photonics and spintronics. Of the reports published, the majority examine mechanically-exfoliated flakes from chemical vapor transport (CVT) grown crystals. While this production method is ideal for fundamental studies, it is very resource intensive therefore rendering this process unsuitable for large scale applications. In this report, the synthesis of thin films of PtTe2 through the reaction of solid-phase precursor films is described. This offers a production method for large-area, thickness-controlled PtTe2, suitable for a range of applications. These polycrystalline PtTe2 films were grown at temperatures as low as 450 degC, significantly below the typical temperatures used in the CVT synthesis methods. To investigate their potential applicability, these films were examined as electrocatalysts for the hydrogen evolution reaction (HER) and oxygen reduction reaction (ORR). The films showed promising catalytic behavior, however, the PtTe2 was found to undergo chemical transformation to a substoichiometric chalcogenide compound under ORR conditions. This study shows while PtTe2 is stable and highly useful for HER, this property does not apply to ORR, which undergoes a fundamentally different mechanism. This study broadens our knowledge of the electrocatalysis of TMDs. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Raman Characterization of Platinum Diselenide Thin Films

Authors: Maria O'Brien, Niall McEvoy, Carlo Motta, Jian-Yao Zheng, Nina C. Berner, Jani Kotakoski, Kenan Elibol, Timothy J. Pennycook, Jannik C. Meyer, Chanyoung Yim, Mohamed Abid, Toby Hallam, John F. Donegan, Stefano Sanvito, Georg S. Duesberg

Abstract: Platinum diselenide (PtSe2) is a newly discovered 2D material which is of great interest for applications in electronics and catalysis. PtSe2 films were synthesized by thermally-assisted selenization of predeposited platinum films and scanning transmission electron microscopy revealed the crystal structure of these films to be 1T. Raman scattering of these films was studied as a function of film t… ▽ More Platinum diselenide (PtSe2) is a newly discovered 2D material which is of great interest for applications in electronics and catalysis. PtSe2 films were synthesized by thermally-assisted selenization of predeposited platinum films and scanning transmission electron microscopy revealed the crystal structure of these films to be 1T. Raman scattering of these films was studied as a function of film thickness, laser wavelength and laser polarization. Eg and A1g Raman active modes were identified using polarization measurements in the Raman setup. These modes were found to display a clear position and intensity dependence with film thickness, for multiple excitation wavelengths, and their peak positions agree with simulated phonon dispersion curves for PtSe2. These results highlight the practicality of using Raman spectroscopy as a prime characterization technique for newly-synthesized 2D materials. △ Less

Submitted 31 December, 2015; originally announced December 2015.

Map** of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects

Authors: Maria OBrien, Niall McEvoy, Damien Hanlon, Toby Hallam, Jonathan N. Coleman, Georg S. Duesberg

Abstract: Layered inorganic materials, such as the transition metal dichalcogenides (TMDs), have attracted much attention due to their exceptional electronic and optical properties. Reliable synthesis and characterization of these materials must be developed if these properties are to be exploited. Herein, we present low-frequency Raman analysis of MoS2, MoSe2, WSe2 and WS2 grown by chemical vapour depositi… ▽ More Layered inorganic materials, such as the transition metal dichalcogenides (TMDs), have attracted much attention due to their exceptional electronic and optical properties. Reliable synthesis and characterization of these materials must be developed if these properties are to be exploited. Herein, we present low-frequency Raman analysis of MoS2, MoSe2, WSe2 and WS2 grown by chemical vapour deposition (CVD). Raman spectra are acquired over large areas allowing changes in the position and intensity of the shear and layer-breathing modes to be visualized in maps. This allows detailed characterization of mono- and few-layered TMDs which is complementary to well-established (high-frequency) Raman and photoluminescence spectroscopy. This study presents a major step** stone in fundamental understanding of layered materials as map** the low-frequency modes allows the quality, symmetry, stacking configuration and layer number of 2D materials to be probed over large areas. In addition, we report on anomalous resonance effects in the low-frequency region of the WS2 Raman spectrum. △ Less

Submitted 8 December, 2015; v1 submitted 4 August, 2015; originally announced August 2015.

Origami-based spintronics in graphene

Authors: A. T. Costa, M. S. Ferreira, Toby Hallam, Georg S. Duesberg, A. H. Castro Neto

Abstract: We show that periodically folded graphene sheets with enhanced spin-orbit interaction due to curvature effects can carry spin polarized currents and have gaps in the electronic spectrum in the presence of weak magnetic fields. Our results indicate that such origami-like structures can be used efficiently in spintronic applications. We show that periodically folded graphene sheets with enhanced spin-orbit interaction due to curvature effects can carry spin polarized currents and have gaps in the electronic spectrum in the presence of weak magnetic fields. Our results indicate that such origami-like structures can be used efficiently in spintronic applications. △ Less

Submitted 14 August, 2013; v1 submitted 10 April, 2013; originally announced April 2013.

Atomically precise placement of single dopants in Si

Authors: S. R. Schofield, N. J. Curson, M. Y. Simmons, F. J. Ruess, T. Hallam, L. Oberbeck, R. G. Clark

Abstract: We demonstrate the controlled incorporation of P dopant atoms in Si (001) presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si (001) and show that it is possible to thermally incorporate P atoms into Si (001) below the H desorption temperature. Control over the precise spatial location at which P atoms are inc… ▽ More We demonstrate the controlled incorporation of P dopant atoms in Si (001) presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si (001) and show that it is possible to thermally incorporate P atoms into Si (001) below the H desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H-lithography. We demonstrate the positioning of single P atoms in Si with ~ 1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms. △ Less

Submitted 23 July, 2003; originally announced July 2003.

Comments: 5 pages, 4 figures

Measurement of phosphorus segregation in silicon at the atomic-scale using STM

Authors: Lars Oberbeck, Neil J. Curson, Toby Hallam, Michelle Y. Simmons, Robert G. Clark, Gerhard Bilger

Abstract: In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunnelling microscopy (STM) and molecular beam epitaxy it is necessary to minimize the segregation/diffusion of dopant atoms during silicon encapsulation. We characterize the surface segregation/diffusion of phosphorus atoms from a $δ$-doped layer in silicon after encapsulation at 250$^{\circ}$C and roo… ▽ More In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunnelling microscopy (STM) and molecular beam epitaxy it is necessary to minimize the segregation/diffusion of dopant atoms during silicon encapsulation. We characterize the surface segregation/diffusion of phosphorus atoms from a $δ$-doped layer in silicon after encapsulation at 250$^{\circ}$C and room temperature using secondary ion mass spectrometry (SIMS), Auger electron spectroscopy (AES), and STM. We show that the surface phosphorus density can be reduced to a few percent of the initial $δ$-doped density if the phosphorus atoms are encapsulated with 5 or 10 monolayers of epitaxial silicon at room temperature. We highlight the limitations of SIMS and AES to determine phosphorus segregation at the atomic-scale and the advantage of using STM directly. △ Less

Submitted 21 July, 2003; originally announced July 2003.