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Robust Parallel Laser Driving of Quantum Dots for Multiplexing of Quantum Light Sources
Authors:
Ajan Ramachandran,
Grant R. Wilbur,
Reuble Mathew,
Allister Mason,
Sabine ONeal,
Dennis G. Deppe,
Kimberley C. Hall
Abstract:
Deterministic sources of quantum light (i.e. single photons or pairs of entangled photons) are required for a whole host of applications in quantum technology, including quantum imaging, quantum cryptography and the long-distance transfer of quantum information in future quantum networks. Semiconductor quantum dots are ideal candidates for solid-state quantum emitters as these artificial atoms hav…
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Deterministic sources of quantum light (i.e. single photons or pairs of entangled photons) are required for a whole host of applications in quantum technology, including quantum imaging, quantum cryptography and the long-distance transfer of quantum information in future quantum networks. Semiconductor quantum dots are ideal candidates for solid-state quantum emitters as these artificial atoms have large dipole moments and a quantum confined energy level structure, enabling the realization of single photon sources with high repetition rates and high single photon purity. Quantum dots may also be triggered using a laser pulse for on-demand operation. The naturally-occurring size variations in ensembles of quantum dots offers the potential to increase the bandwidth of quantum communication systems through wavelength-division multiplexing, but conventional laser triggering schemes based on Rabi rotations are ineffective when applied to inequivalent emitters. Here we report the demonstration of the simultaneous triggering of >10 quantum dots using adiabatic rapid passage. We show that high-fidelity quantum state inversion is possible in a system of quantum dots with a 15~meV range of optical transition energies using a single broadband, chirped laser pulse, laying the foundation for high-bandwidth, multiplexed quantum networks.
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Submitted 28 November, 2023;
originally announced November 2023.
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Spectrally-modified frequency-swept pulses for optically-driven quantum light sources
Authors:
G. R. Wilbur,
A. Binai-Motlagh,
A. Clarke,
A. Ramachandran,
N. Milson,
J. P. Healey,
S. O'Neal,
D. G. Deppe,
K. C. Hall
Abstract:
We present a driving scheme for solid-state quantum emitters using frequency-swept pulses containing a spectral hole resonant with the optical transition in the emitter. Our scheme enables high-fidelity state inversion, exhibits robustness to variations in the laser pulse parameters and is immune to phonon-mediated excitation-induced dephasing, benefits that derive from the the insensitivity of th…
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We present a driving scheme for solid-state quantum emitters using frequency-swept pulses containing a spectral hole resonant with the optical transition in the emitter. Our scheme enables high-fidelity state inversion, exhibits robustness to variations in the laser pulse parameters and is immune to phonon-mediated excitation-induced dephasing, benefits that derive from the the insensitivity of the adiabaticity condition to variations in the experimental parameters. Our resonant driving approach could be combined with spectral filtering of the scattered pump light and photonic devices for enhanced collection efficiency to realize simultaneous high indistinguishability and brightness in single photon source applications.
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Submitted 2 March, 2022;
originally announced March 2022.
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Suppression of Decoherence tied to Electron-Phonon Coupling in Telecom-Compatible Quantum Dots: Low-threshold Reappearance Regime for Quantum State Inversion
Authors:
A. Ramachandran,
G. R. Wilbur,
S. O'Neal,
D. G. Deppe,
K. C. Hall
Abstract:
We demonstrate full suppression of dephasing tied to deformation potential coupling of confined electrons to longitunidal acoustic (LA) phonons in optical control experiments on large semiconductor quantum dots (QDs) with emission compatible with the low-dispersion telecommunications band at 1.3~$μ$m. By exploiting the sensitivity of the electron-phonon spectral density to the size and shape of th…
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We demonstrate full suppression of dephasing tied to deformation potential coupling of confined electrons to longitunidal acoustic (LA) phonons in optical control experiments on large semiconductor quantum dots (QDs) with emission compatible with the low-dispersion telecommunications band at 1.3~$μ$m. By exploiting the sensitivity of the electron-phonon spectral density to the size and shape of the QD, we demonstrate a four-fold reduction in the threshold pulse area required to enter the decoupled regime for exciton inversion using adiabatic rapid passage (ARP). Our calculations of the quantum state dynamics provide good agreement with our experimental results and indicate that the symmetry of the QD wave function provides an additional means to engineer the electron-phonon interaction. Our findings will support the development of solid-state quantum emitters in future distributed quantum networks using semiconductor QDs.
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Submitted 4 December, 2020; v1 submitted 24 June, 2020;
originally announced June 2020.
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Ultrafast acoustic phonon scattering in CH$_3$NH$_3$PbI$_3$ revealed by femtosecond four-wave mixing
Authors:
Samuel A. March,
Drew B. Riley,
Charlotte Clegg,
Daniel Webber,
Ian G. Hill,
Zhi-Gang Yu,
Kimberley C. Hall
Abstract:
Carrier scattering processes are studied in CH$_3$NH$_3$PbI$_3$ using temperature-dependent four-wave mixing experiments. Our results indicate that scattering by ionized impurities limits the interband dephasing time (T$_2$) below 30~K, with strong electron-phonon scattering dominating at higher temperatures (with a timescale of 125 fs at 100 K). Our theoretical simulations provide quantitative ag…
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Carrier scattering processes are studied in CH$_3$NH$_3$PbI$_3$ using temperature-dependent four-wave mixing experiments. Our results indicate that scattering by ionized impurities limits the interband dephasing time (T$_2$) below 30~K, with strong electron-phonon scattering dominating at higher temperatures (with a timescale of 125 fs at 100 K). Our theoretical simulations provide quantitative agreement with the measured carrier scattering rate and show that the rate of acoustic phonon scattering is enhanced by strong spin-orbit coupling, which modifies the band-edge density of states. The Rashba coefficient extracted from fitting the experimental results ($γ_c=2$ eV angstrom) is in agreement with calculations of the surface Rashba effect and recent experiments using the photogalvanic effect on thin films.
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Submitted 15 July, 2019;
originally announced July 2019.
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Detection of Rashba spin splitting in 2D organic-inorganic perovskite via precessional carrier spin relaxation
Authors:
Seth B. Todd,
Drew B. Riley,
Ali Binai-Motlagh,
Charlotte Clegg,
Ajan Ramachandran,
Samuel A. March,
Ian G. Hill,
Constantinos C. Stoumpos,
Mercouri G. Kanatzidis,
Zhi-Gang Yu,
Kimberley C. Hall
Abstract:
The strong spin-orbit interaction in the organic-inorganic perovskites tied to the incorporation of heavy elements (\textit{e.g.} Pb, I) makes these materials interesting for applications in spintronics. Due to a lack of inversion symmetry associated with distortions of the metal-halide octahedra, the Rashba effect (used \textit{e.g.} in spin field-effect transistors and spin filters) has been pre…
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The strong spin-orbit interaction in the organic-inorganic perovskites tied to the incorporation of heavy elements (\textit{e.g.} Pb, I) makes these materials interesting for applications in spintronics. Due to a lack of inversion symmetry associated with distortions of the metal-halide octahedra, the Rashba effect (used \textit{e.g.} in spin field-effect transistors and spin filters) has been predicted to be much larger in these materials than in traditional III-V semiconductors such as GaAs, supported by the recent observation of a near record Rashba spin splitting in CH$_3$NH$_3$PbBr$_3$ using angle-resolved photoemission spectroscopy (ARPES). More experimental studies are needed to confirm and quantify the presence of Rashba effects in the organic-inorganic perovskite family of materials. Here we apply time-resolved circular dichroism techniques to the study of carrier spin dynamics in a 2D perovskite thin film [(BA)$_2$MAPb$_2$I$_7$; BA = CH$_3$(CH$_2$)$_3$NH$_3$, MA = CH$_3$NH$_3$]. Our findings confirm the presence of a Rashba spin splitting via the dominance of precessional spin relaxation induced by the Rashba effective magnetic field. The size of the Rashba spin splitting in our system was extracted from simulations of the measured spin dynamics incorporating LO-phonon and electron-electron scattering, yielding a value of 10 meV at an electron energy of 50 meV above the band gap, representing a 20 times larger value than in GaAs quantum wells.
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Submitted 27 July, 2018;
originally announced July 2018.
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Carrier Diffusion in Thin-Film CH3NH3PbI3 Perovskite Measured using Four-Wave Mixing
Authors:
D. Webber,
C. Clegg,
A. W. Mason,
S. A. March,
I. G. Hill,
K. C. Hall
Abstract:
We report the application of femtosecond four-wave mixing (FWM) to the study of carrier transport in solution-processed CH3NH3PbI3. The diffusion coefficient was extracted through direct detection of the lateral diffusion of carriers utilizing the transient grating technique, coupled with simultaneous measurement of decay kinetics exploiting the versatility of the boxcar excitation beam geometry.…
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We report the application of femtosecond four-wave mixing (FWM) to the study of carrier transport in solution-processed CH3NH3PbI3. The diffusion coefficient was extracted through direct detection of the lateral diffusion of carriers utilizing the transient grating technique, coupled with simultaneous measurement of decay kinetics exploiting the versatility of the boxcar excitation beam geometry. The observation of exponential decay of the transient grating versus interpulse delay indicates diffusive transport with negligible trap** within the first nanosecond following excitation. The in-plane transport geometry in our experiments enabled the diffusion length to be compared directly with the grain size, indicating that carriers move across multiple grain boundaries prior to recombination. Our experiments illustrate the broad utility of FWM spectroscopy for rapid characterization of macroscopic film transport properties.
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Submitted 13 June, 2017;
originally announced June 2017.
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Simultaneous observation of free and defect-bound excitons in CH3NH3PbI3 using four-wave mixing spectroscopy
Authors:
Samuel A. March,
Charlotte Clegg,
Drew B. Riley,
Daniel Webber,
Ian G. Hill,
Kimberley C. Hall
Abstract:
Solar cells incorporating organic-inorganic perovskite, which may be fabricated using low-cost solution-based processing, have witnessed a dramatic rise in efficiencies yet their fundamental photophysical properties are not well understood. The exciton binding energy, central to the charge collection process, has been the subject of considerable controversy due to subtleties in extracting it from…
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Solar cells incorporating organic-inorganic perovskite, which may be fabricated using low-cost solution-based processing, have witnessed a dramatic rise in efficiencies yet their fundamental photophysical properties are not well understood. The exciton binding energy, central to the charge collection process, has been the subject of considerable controversy due to subtleties in extracting it from conventional linear spectroscopy techniques due to strong broadening tied to disorder. Here we report the simultaneous observation of free and defect-bound excitons in CH3NH3PbI3 films using four-wave mixing (FWM) spectroscopy. Due to the high sensitivity of FWM to excitons, tied to their longer coherence decay times than unbound electron-hole pairs, we show that the exciton resonance energies can be directly observed from the nonlinear optical spectra. Our results indicate low-temperature binding energies of 13 meV (29 meV) for the free (defect-bound) exciton, with the 16 meV localization energy for excitons attributed to binding to point defects. Our findings shed light on the wide range of binding energies (2-55 meV) reported in recent years.
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Submitted 5 August, 2016;
originally announced August 2016.
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Signatures of four-particle correlations associated with exciton-carrier interactions in coherent spectroscopy on bulk GaAs
Authors:
D. Webber,
B. L. Wilmer,
X. Liu,
M. Dobrowolska,
J. K. Furdyna,
A. D. Bristow,
K. C. Hall
Abstract:
Transient four-wave mixing studies of bulk GaAs under conditions of broad bandwidth excitation of primarily interband transitions have enabled four-particle correlations tied to degenerate (exciton-exciton) and nondegenerate (exciton-carrier) interactions to be studied. Real two-dimensional Fourier-transform spectroscopy (2DFTS) spectra reveal a complex response at the heavy-hole exciton emission…
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Transient four-wave mixing studies of bulk GaAs under conditions of broad bandwidth excitation of primarily interband transitions have enabled four-particle correlations tied to degenerate (exciton-exciton) and nondegenerate (exciton-carrier) interactions to be studied. Real two-dimensional Fourier-transform spectroscopy (2DFTS) spectra reveal a complex response at the heavy-hole exciton emission energy that varies with the absorption energy, ranging from dispersive on the diagonal, through absorptive for low-energy interband transitions to dispersive with the opposite sign for interband transitions high above band gap. Simulations using a multilevel model augmented by many-body effects provide excellent agreement with the 2DFTS experiments and indicate that excitation-induced dephasing (EID) and excitation-induced shift (EIS) affect degenerate and nondegenerate interactions equivalently, with stronger exciton-carrier coupling relative to exciton-exciton coupling by approximately an order of magnitude. These simulations also indicate that EID effects are three times stronger than EIS in contributing to the coherent response of the semiconductor.
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Submitted 20 May, 2016;
originally announced May 2016.
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Role of Strain on the Coherent Properties of GaAs Excitons and Biexcitons
Authors:
Brian L. Wilmer,
Daniel Webber,
Joseph M. Ashley,
Kimberley C. Hall,
Alan D. Bristow
Abstract:
Polarization-dependent two-dimensional Fourier-transform spectroscopy (2DFTS) is performed on excitons in strained bulk GaAs layers probing the coherent response for differing amounts of strain. Biaxial tensile strain lifts the degeneracy of heavy-hole (HH) and light-hole (LH) valence states, leading to an observed splitting of the associated excitons at low temperature. Increasing the strain incr…
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Polarization-dependent two-dimensional Fourier-transform spectroscopy (2DFTS) is performed on excitons in strained bulk GaAs layers probing the coherent response for differing amounts of strain. Biaxial tensile strain lifts the degeneracy of heavy-hole (HH) and light-hole (LH) valence states, leading to an observed splitting of the associated excitons at low temperature. Increasing the strain increases the magnitude of the HH/LH exciton peak splitting, induces an asymmetry in the off-diagonal coherences, increases the difference in the HH and LH exciton homogenous linewidths, and increases the inhomogeneous broadening of both exciton species. All results arise from strain-induced variations in the local electronic environment, which is not uniform along the growth direction of the thin layers. For cross-linear polarized excitation, wherein excitonic signals give way to biexcitonic signals, the high-strain sample shows evidence of bound LH, HH, and mixed biexcitons.
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Submitted 18 August, 2016; v1 submitted 19 May, 2016;
originally announced May 2016.
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Four-wave mixing in perovskite photovoltaic materials reveals long dephasing times and weaker many-body interactions than GaAs
Authors:
Samuel A. March,
Drew B. Riley,
Charlotte Clegg,
Daniel Webber,
Xinyu Liu,
Margaret Dobrowolska,
Jacek K. Furdyna,
Ian G. Hill,
Kimberley C. Hall
Abstract:
Perovksite semiconductors have shown promise for low-cost solar cells, lasers and photodetectors, yet their fundamental photophysical properties are not well understood. Recent observations of a low ($\sim$few meV) exciton binding energy and evidence of hot phonon effects in the room temperature phase suggest that perovskites are much closer to inorganic semiconductors than the absorber layers in…
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Perovksite semiconductors have shown promise for low-cost solar cells, lasers and photodetectors, yet their fundamental photophysical properties are not well understood. Recent observations of a low ($\sim$few meV) exciton binding energy and evidence of hot phonon effects in the room temperature phase suggest that perovskites are much closer to inorganic semiconductors than the absorber layers in traditional organic photovoltaics, signaling the need for experiments that shed light on the placement of perovskite materials within the spectrum of semiconductors used in optoelectronics and photovoltaics. Here we use four-wave mixing (FWM) to contrast the coherent optical response of CH$_3$NH$_3$PbI$_3$ thin films and crystalline GaAs. At carrier densities relevant for solar cell operation, our results show that carriers interact surprisingly weakly via the Coulomb interaction in perovskite, much weaker than in inorganic semiconductors. These weak many-body effects lead to a dephasing time in CH$_3$NH$_3$PbI$_3$ $\sim$3 times longer than in GaAs. Our results also show that the strong enhancement of the exciton FWM signal tied to excitation-induced dephasing in GaAs and other III-V semiconductors does not occur in perovskite due to weak exciton-carrier scattering interactions.
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Submitted 22 September, 2016; v1 submitted 16 February, 2016;
originally announced February 2016.
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Cross-talk minimising stabilizers
Authors:
Kaila C. S. Hall,
Daniel K. L. Oi
Abstract:
Verification and characterisation of quantum states are crucial for the implementation of quantum information processing, especially for many-body systems such as cluster states in optical lattices. In theory, it is simple to estimate the distance of a state with a target cluster state by measurement of a set of suitable stabilizer operators. However, experimental non-idealities can lead to compli…
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Verification and characterisation of quantum states are crucial for the implementation of quantum information processing, especially for many-body systems such as cluster states in optical lattices. In theory, it is simple to estimate the distance of a state with a target cluster state by measurement of a set of suitable stabilizer operators. However, experimental non-idealities can lead to complications, in particular cross-talk in single site addressing and measurement. By making a suitable choice of stabilizer operator sets we may be able to reduce, but not eliminate, these cross-talk errors. The degree of cross-talk mitigation depends on the geometry of the cluster state and subsets of cross-talk free stabilizers can be generated for certain shapes using a simple algorithm.
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Submitted 16 July, 2015;
originally announced July 2015.
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Bell inequality violation in the presence of vacancies and incomplete measurements
Authors:
Kaila C. S. Hall,
Daniel K. L. Oi
Abstract:
The characterization of a quantum system can be complicated by non-ideal measurement processes. In many systems, the underlying physical measurement is only sensitive to a single fixed state, complementary outcomes are inferred by non-detection leaving them vulnerable to out-of-Hilbert space errors such as particle loss. It is still possible to directly verify the violation of a Bell inequality, h…
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The characterization of a quantum system can be complicated by non-ideal measurement processes. In many systems, the underlying physical measurement is only sensitive to a single fixed state, complementary outcomes are inferred by non-detection leaving them vulnerable to out-of-Hilbert space errors such as particle loss. It is still possible to directly verify the violation of a Bell inequality, hence witness entanglement of a bipartite state, in the presence of large vacancy rates using such an incomplete measurement by optimizing the measurement settings. The scheme is robust against imperfect a priori state knowledge and also moderate amounts of error in state determination.
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Submitted 23 December, 2014;
originally announced December 2014.
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Response to "Comment on `Performance of a spin-based insulated gate field effect transistor' [Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260]" [cond-mat/0604532]
Authors:
Michael E. Flatté,
Kimberley C. Hall
Abstract:
A recent e-print (cond-mat/0604532) presented a proposed Comment to Applied Physics Letters on our publication Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260. Here is our Response. As the proposed Comment has now been rejected by Applied Physics Letters, neither the Comment nor the Response will be published in Applied Physics Letters in this form.
A recent e-print (cond-mat/0604532) presented a proposed Comment to Applied Physics Letters on our publication Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260. Here is our Response. As the proposed Comment has now been rejected by Applied Physics Letters, neither the Comment nor the Response will be published in Applied Physics Letters in this form.
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Submitted 17 July, 2006;
originally announced July 2006.
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Performance of a spin-based insulated gate field effect transistor
Authors:
Kimberley C. Hall,
Michael E. Flatté
Abstract:
Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin transistors use static spin-selective barriers and gate control of spin relaxation. The different origins of transistor action lead to distinct size dependences of…
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Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin transistors use static spin-selective barriers and gate control of spin relaxation. The different origins of transistor action lead to distinct size dependences of the power dissipation in these transistors and permit sufficiently small spin-based transistors to surpass the performance of charge-based transistors at room temperature or above. This includes lower threshold voltages, smaller gate capacitances, reduced gate switching energies and smaller source-drain leakage currents.
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Submitted 9 March, 2006;
originally announced March 2006.
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Efficient electron spin detection with positively charged quantum dots
Authors:
K. Gundogdu,
K. C. Hall,
Thomas F. Boggess,
O. B. Shchekin,
D. G. Deppe
Abstract:
We report the application of time- and polarization-resolved photoluminescence up-conversion spectroscopy to the study of spin capture and energy relaxation in positively and negatively charged, as well as neutral, InAs self-assembled quantum dots. When compared to the neutral dots, we find that carrier capture and relaxation to the ground state is much faster in the highly charged dots, suggest…
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We report the application of time- and polarization-resolved photoluminescence up-conversion spectroscopy to the study of spin capture and energy relaxation in positively and negatively charged, as well as neutral, InAs self-assembled quantum dots. When compared to the neutral dots, we find that carrier capture and relaxation to the ground state is much faster in the highly charged dots, suggesting that electron-hole scattering dominates this process. The long spin lifetime, short capture time, and high radiative efficiency of the positively charged dots, indicates that these structures are superior to both quantum well and neutral quantum dot light-emitting diode (LED) spin detectors for spintronics applications.
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Submitted 2 November, 2003;
originally announced November 2003.
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Non-magnetic semiconductor spin transistor
Authors:
K. C. Hall,
Wayne H. Lau,
K. Gundogdu,
Michael E. Flatte,
Thomas F. Boggess
Abstract:
We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in (110) InAs/GaSb/AlSb heterostructures, which together with the enhanced spin decay times in (110) quantum wells demonstrates the potential for exploitation of BI…
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We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in (110) InAs/GaSb/AlSb heterostructures, which together with the enhanced spin decay times in (110) quantum wells demonstrates the potential for exploitation of BIA effects in semiconductor spintronics devices. Spin injection and detection is achieved using spin-dependent resonant interband tunneling and spin transistor action is realized through control of the electron spin lifetime in an InAs lateral transport channel using an applied electric field (Rashba effect). This device may also be used as a spin valve, or a magnetic field sensor. The electronic structure and spin relaxation times for the spin transistor proposed here are calculated using a nonperturbative 14-band k.p nanostructure model.
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Submitted 28 July, 2003;
originally announced July 2003.
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Spin relaxation in (110) and (001) InAs/GaSb superlattices
Authors:
K. C. Hall,
K. Gundogdu,
E. Altunkaya,
W. H. Lau,
Michael E. Flatte,
Thomas F. Boggess,
J. J. Zinck,
W. B. Barvosa-Carter,
S. L. Skeith
Abstract:
We report an enhancement of the electron spin relaxation time (T1) in a (110) InAs/GaSb superlattice by more than an order of magnitude (25 times) relative to the corresponding (001) structure. The spin dynamics were measured using polarization sensitive pump probe techniques and a mid-infrared, subpicosecond PPLN OPO. Longer T1 times in (110) superlattices are attributed to the suppression of t…
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We report an enhancement of the electron spin relaxation time (T1) in a (110) InAs/GaSb superlattice by more than an order of magnitude (25 times) relative to the corresponding (001) structure. The spin dynamics were measured using polarization sensitive pump probe techniques and a mid-infrared, subpicosecond PPLN OPO. Longer T1 times in (110) superlattices are attributed to the suppression of the native interface asymmetry and bulk inversion asymmetry contributions to the precessional D'yakonov Perel spin relaxation process. Calculations using a nonperturbative 14-band nanostructure model give good agreement with experiment and indicate that possible structural inversion asymmetry contributions to T1 associated with compositional mixing at the superlattice interfaces may limit the observed spin lifetime in (110) superlattices. Our findings have implications for potential spintronics applications using InAs/GaSb heterostructures.
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Submitted 7 January, 2003;
originally announced January 2003.
