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Picosecond Femtojoule Resistive Switching in Nanoscale VO$_{2}$ Memristors
Authors:
S. W. Schmid,
L. Pósa,
T. N. Török,
B. Sánta,
Z. Pollner,
G. Molnár,
Y. Horst,
J. Volk,
J. Leuthold,
A. Halbritter,
M. Csontos
Abstract:
Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible energy consumption. The dynamics of the Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified as a rich and reliable sou…
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Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible energy consumption. The dynamics of the Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified as a rich and reliable source of such functional complexity. However, its full potential in high-speed and low-power operation has been largely unexplored. We fabricated nanoscale VO$_{2}$ devices embedded in a broad-band test circuit to study the speed and energy limitations of their resistive switching operation. Our picosecond time-resolution, real-time resistive switching experiments and numerical simulations demonstrate that tunable low-resistance states can be set by the application of 20~ps long, $<$1.7~V amplitude voltage pulses at 15~ps incubation times and switching energies starting from a few femtojoule. Moreover, we demonstrate that at nanometer-scale device sizes not only the electric field induced insulator-to-metal transition, but also the thermal conduction limited metal-to-insulator transition can take place at timescales of 100's of picoseconds. These orders of magnitude breakthroughs open the route to the design of high-speed and low-power dynamical circuits for a plethora of neuromorphic computing applications from pattern recognition to numerical optimization.
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Submitted 20 March, 2024;
originally announced March 2024.
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Improving single-molecule conductance measurements with change point detection from the econometrics toolbox
Authors:
Joseph M. Hamill,
William Bro-Jørgensen,
Zoltán Balogh,
Haixing Li,
Susanne Leitherer,
David Solomon,
András Halbritter,
Gemma Solomon
Abstract:
Structural breaks occur in timeseries data across a broad range of fields, from economics to nanosciences. For measurements of single-molecule break junctions, structural breaks in conductance versus displacement data occur when the molecular junction ruptures. This moment is significant because the molecule is likely in its most extended geometry, and therefore resembles most closely the geometry…
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Structural breaks occur in timeseries data across a broad range of fields, from economics to nanosciences. For measurements of single-molecule break junctions, structural breaks in conductance versus displacement data occur when the molecular junction ruptures. This moment is significant because the molecule is likely in its most extended geometry, and therefore resembles most closely the geometry used in theoretical predictions. Conventional single-molecule break junction data analysis, on the other hand, typically uses the entire molecular plateau to estimate the single-molecule conductance, which skews the estimate when the plateau is sloped. Borrowing from econometrics, where the study of structural breaks is well established, we present change point detection (CPD) as a tool to search for junction rupture in single-molecule break junction data, and improve estimates in single-molecule conductance. We demonstrate that using CPD instead of the conventional 1D conductance histogram to determine the mean molecular conductance yields a standard deviation in the estimate of typically half that of the conventional approach, greatly improving accuracy. We apply CPD to three separate data sets, two on 4,4'-bipyridine and one on a silane, two at room temperature and one at 4 K, two in one lab, one in another, to show the wide applicability of even the simplest of CPD algorithms: the Chow test. This versatility and better accuracy will propagate into more accurate theoretical simulations. These improved metrics, in turn, will further improve any downstream analyses, including all emerging machine learning approaches.
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Submitted 23 January, 2024;
originally announced January 2024.
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Autonomous neural information processing by a dynamical memristor circuit
Authors:
Dániel Molnár,
Tímea Nóra Török,
Roland Kövecs,
László Pósa,
Péter Balázs,
György Molnár,
Nadia Jimenez Olalla,
Juerg Leuthold,
János Volk,
Miklós Csontos,
András Halbritter
Abstract:
Analog tunable memristors are widely utilized as artificial synapses in various neural network applications. However, exploiting the dynamical aspects of their conductance change to implement active neurons is still in its infancy, awaiting the realization of efficient neural signal recognition functionalities. Here we experimentally demonstrate an artificial neural information processing unit tha…
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Analog tunable memristors are widely utilized as artificial synapses in various neural network applications. However, exploiting the dynamical aspects of their conductance change to implement active neurons is still in its infancy, awaiting the realization of efficient neural signal recognition functionalities. Here we experimentally demonstrate an artificial neural information processing unit that can detect a temporal pattern in a very noisy environment, fire a single output spike upon successful detection and reset itself in a fully unsupervised, autonomous manner. This circuit relies on the dynamical operation of only two memristive blocks: a non-volatile Ta$_2$O$_5$ device and a volatile VO$_2$ unit. A fading functionality with exponentially tunable memory time constant enables adaptive operation dynamics, which can be tailored for the targeted temporal pattern recognition task. In the trained circuit false input patterns only induce short-term variations. In contrast, the desired signal activates long-term memory operation of the non-volatile component, which triggers a firing output of the volatile block.
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Submitted 25 July, 2023;
originally announced July 2023.
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Noise tailoring, noise annealing and external noise injection strategies in memristive Hopfield neural networks
Authors:
János Gergő Fehérvári,
Zoltán Balogh,
Tímea Nóra Török,
András Halbritter
Abstract:
The commercial introduction of a novel electronic device is often preceded by a lengthy material optimization phase devoted to the suppression of device noise as much as possible. The emergence of novel computing architectures, however, triggers a paradigm change in noise engineering, demonstrating that a non-suppressed, but properly tailored noise can be harvested as a computational resource in p…
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The commercial introduction of a novel electronic device is often preceded by a lengthy material optimization phase devoted to the suppression of device noise as much as possible. The emergence of novel computing architectures, however, triggers a paradigm change in noise engineering, demonstrating that a non-suppressed, but properly tailored noise can be harvested as a computational resource in probabilistic computing schemes. Such strategy was recently realized on the hardware level in memristive Hopfield neural networks delivering fast and highly energy efficient optimization performance. Inspired by these achievements we perform a thorough analysis of simulated memristive Hopfield neural networks relying on realistic noise characteristics acquired on various memristive devices. These characteristics highlight the possibility of orders of magnitude variations in the noise level depending on the material choice as well as on the resistance state (and the corresponding active region volume) of the devices. Our simulations separate the effects of various device non-idealities on the operation of the Hopfield neural network by investigating the role of the programming accuracy, as well as the noise type and noise amplitude of the ON and OFF states. Relying on these results we propose optimized noise tailoring, noise annealing, and external noise injection strategies.
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Submitted 22 July, 2023;
originally announced July 2023.
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Voltage-time dilemma and stochastic threshold voltage variation in pure silver atomic switches
Authors:
Anna Nyáry,
Zoltán Balogh,
Máté Vigh,
Botond Sánta,
László Pósa,
András Halbritter
Abstract:
The formation and dissolution of silver nanowires plays a fundamental role in a broad range of resistive switching devices, fundamentally relying on the electrochemical metallization phenomenon. It was shown, however, that resistive switching may also appear in pure metallic nanowires lacking any silver-ion-hosting embedding environment, but this pure atomic switching mechanism fundamentally diffe…
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The formation and dissolution of silver nanowires plays a fundamental role in a broad range of resistive switching devices, fundamentally relying on the electrochemical metallization phenomenon. It was shown, however, that resistive switching may also appear in pure metallic nanowires lacking any silver-ion-hosting embedding environment, but this pure atomic switching mechanism fundamentally differs from the conventional electrochemical-metallization-based resistive switching. To facilitate the quantitative description of the former phenomenon, we investigate broad range of Ag atomic junctions with a special focus on the frequency-dependence and the fundamentally stochastic cycle-to-cycle variation of the switching threshold voltage. These devices are established in an ultra-high purity environment where electrochemical metallization can be excluded. The measured characteristics are successfully described by a vibrational pum** model, yielding consistent predictions for the weak frequency dependence and the large variance of the switching threshold voltage. We also demonstrate that electrochemical-metallization-based resistive switching and pure atomic switching may appear in the same device structure, and therefore the proper understanding of the pure atomic switching mechanism has a distinguished importance in silver-based electrochemical metallization cells.
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Submitted 9 June, 2023;
originally announced June 2023.
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Configuration-specific insight to single-molecule conductance and noise data revealed by principal component projection method
Authors:
Zoltán Balogh,
Gréta Mezei,
Nóra Tenk,
András Magyarkuti,
András Halbritter
Abstract:
We explore the merits of neural network boosted, principal-component-projection-based, unsupervised data classification in single-molecule break junction measurements, demonstrating that this method identifies highly relevant trace classes according to the well-defined and well-visualized internal correlations of the dataset. To this end, we investigate single-molecule structures exhibiting double…
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We explore the merits of neural network boosted, principal-component-projection-based, unsupervised data classification in single-molecule break junction measurements, demonstrating that this method identifies highly relevant trace classes according to the well-defined and well-visualized internal correlations of the dataset. To this end, we investigate single-molecule structures exhibiting double molecular configurations, exploring the role of the leading principal components in the identification of alternative junction evolution trajectories. We show how the proper principal component projections can be applied to separately analyze the high or low-conductance molecular configurations, which we exploit in $1/f$-type noise measurements on bipyridine molecules. This approach untangles the unclear noise evolution of the entire dataset, identifying the coupling of the aromatic ring to the electrodes through the $π$ orbitals in two distinct conductance regions, and its subsequent uncoupling as these configurations are stretched.
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Submitted 8 March, 2023;
originally announced March 2023.
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Quantum transport properties of tantalum-oxide resistive switching filaments
Authors:
Tímea Nóra Török,
Péter Makk,
Zoltán Balogh,
Miklós Csontos,
András Halbritter
Abstract:
Filamentary resistive switching devices are not only considered as promising building blocks for brain-inspired computing architectures, but they also realize an unprecedented operation regime, where the active device volume reaches truly atomic dimensions. Such atomic-sized resistive switching filaments represent the quantum transport regime, where the transmission eigenvalues of the conductance…
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Filamentary resistive switching devices are not only considered as promising building blocks for brain-inspired computing architectures, but they also realize an unprecedented operation regime, where the active device volume reaches truly atomic dimensions. Such atomic-sized resistive switching filaments represent the quantum transport regime, where the transmission eigenvalues of the conductance channels are considered as a specific device fingerprint. Here, we gain insight into the quantum transmission properties of close-to-atomic-sized resistive switching filaments formed across an insulating Ta$_2$O$_5$ layer through superconducting subgap spectroscopy. This method reveals the transmission density function of the open conduction channels contributing to the device conductance. Our analysis confirms the formation of truly atomic-sized filaments composed of 3-8 Ta atoms at their narrowest cross-section. We find that this diameter remains unchanged upon resistive switching. Instead, the switching is governed by the redistribution of oxygen vacancies within the filamentary volume. The set/reset process results in the reduction/formation of an extended barrier at the bottleneck of the filament which enhances/reduces the transmission of the highly open conduction channels.
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Submitted 6 February, 2023;
originally announced February 2023.
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Picosecond Time-Scale Resistive Switching Monitored in Real-Time
Authors:
Miklós Csontos,
Yannik Horst,
Nadia Jimenez Olalla,
Ueli Koch,
Ivan Shorubalko,
András Halbritter,
Juerg Leuthold
Abstract:
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling potential and energy efficiency but also in unprecedented speed. Yet, the breakthrough in high-frequency applications still requires the clarification of the domin…
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The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling potential and energy efficiency but also in unprecedented speed. Yet, the breakthrough in high-frequency applications still requires the clarification of the dominant mechanisms and inherent limitations of ultra-fast resistive switching. Here we investigate bipolar, multilevel resistive switchings in tantalum pentoxide based memristors with picosecond time resolution. We experimentally demonstrate cyclic resistive switching operation due to 20 ps long voltage pulses of alternating polarity. Through the analysis of the real-time response of the memristor we find that the set switching can take place at the picosecond time-scale where it is only compromised by the bandwidth limitations of the experimental setup. In contrast, the completion of the reset transitions significantly exceeds the duration of the ultra-short voltage bias, demonstrating the dominant role of thermal diffusion and underlining the importance of dedicated thermal engineering for future high-frequency memristor circuit applications.
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Submitted 14 September, 2022;
originally announced September 2022.
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1/f noise spectroscopy and noise tailoring of nanoelectronic devices
Authors:
Zoltán Balogh,
Gréta Mezei,
László Pósa,
Botond Sánta,
András Magyarkuti,
András Halbritter
Abstract:
In this paper, we review the 1/f-type noise properties of nanoelectronic devices focusing on three demonstrative platforms: resistive switching memories, graphene nanogaps and single-molecule nanowires. The functionality of such ultrasmall devices is confined to an extremely small volume, where bulk considerations on the noise loose their validity: the relative contribution of a fluctuator heavily…
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In this paper, we review the 1/f-type noise properties of nanoelectronic devices focusing on three demonstrative platforms: resistive switching memories, graphene nanogaps and single-molecule nanowires. The functionality of such ultrasmall devices is confined to an extremely small volume, where bulk considerations on the noise loose their validity: the relative contribution of a fluctuator heavily depends on its distance from the device bottleneck, and the noise characteristics are sensitive to the nanometer-scale device geometry and the details of the mostly non-classical transport mechanism. All these are reflected by a highly system-specific dependence of the noise properties on the active device volume (and the related device resitance), the frequency, or the applied voltage. Accordingly, 1/f-type noise measurements serve as a rich fingerprint of the relevant transport and noise-generating mechanisms in the studied nanoelectronic systems. Finally, we demonstrate that not only the fundamental understanding and the targeted noise suppression is fueled by the 1/f-type noise analysis, but novel probabilistic computing hardware platforms heavily seek well tailorable nanoelectric noise sources.
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Submitted 4 June, 2021;
originally announced June 2021.
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Breaking the quantum PIN code of atomic synapses
Authors:
Tímea Nóra Török,
Miklós Csontos,
Péter Makk,
András Halbritter
Abstract:
Atomic synapses represent a special class of memristors whose operation relies on the formation of metallic nanofilaments bridging two electrodes across an insulator. Due to the magnifying effect of this narrowest cross-section on the device conductance, a nanometer scale displacement of a few atoms grants access to various resistive states at ultimately low energy costs, satisfying the fundamenta…
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Atomic synapses represent a special class of memristors whose operation relies on the formation of metallic nanofilaments bridging two electrodes across an insulator. Due to the magnifying effect of this narrowest cross-section on the device conductance, a nanometer scale displacement of a few atoms grants access to various resistive states at ultimately low energy costs, satisfying the fundamental requirements of neuromorphic computing hardware. Yet, device engineering lacks the complete quantum characterization of such filamentary conductance. Here we analyze multiple Andreev reflection processes emerging at the filament terminals when superconducting electrodes are utilized. Thereby the quantum PIN code, i.e. the transmission probabilities of each individual conduction channel contributing to the conductance of the nanojunctions is revealed. Our measurements on Nb$_2$O$_5$ resistive switching junctions provide a profound experimental evidence that the onset of the high conductance ON state is manifested via the formation of truly atomic-sized metallic filaments.
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Submitted 17 July, 2020;
originally announced July 2020.
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Voltage-controlled binary conductance switching in gold-4,4'-bipyridine-gold single-molecule nanowires
Authors:
Gréta Mezei,
Zoltán Balogh,
András Magyarkuti,
András Halbritter
Abstract:
We investigate gold-4,4'-bipyridine-gold single-molecule junctions with the mechanically controllable break junction technique at cryogenic temperature ($T=4.2\,\text{K}$). We observe bistable probabilistic conductance switching between the two molecular binding configurations, influenced both by the mechanical actuation, and the applied voltage. We demonstrate that the relative dominance of the t…
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We investigate gold-4,4'-bipyridine-gold single-molecule junctions with the mechanically controllable break junction technique at cryogenic temperature ($T=4.2\,\text{K}$). We observe bistable probabilistic conductance switching between the two molecular binding configurations, influenced both by the mechanical actuation, and the applied voltage. We demonstrate that the relative dominance of the two conductance states is tunable by the electrode displacement, whereas the voltage manipulation induces an exponential speedup of both switching times. The detailed investigation of the voltage-tunable switching rates provides an insight into the possible switching mechanisms.
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Submitted 8 June, 2020;
originally announced June 2020.
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Unsupervised feature recognition in single molecule break junction data
Authors:
A. Magyarkuti,
N. Balogh,
Z. Balogh,
L. Venkataraman,
A. Halbritter
Abstract:
Single-molecule break junction measurements deliver a huge number of conductance vs.\ electrode separation traces. Along such measurements the target molecules may bind to the electrodes in different geometries, and the evolution and rupture of the single-molecule junction may also follow distinct trajectories. The unraveling of the various typical trace classes is a prerequisite of the proper phy…
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Single-molecule break junction measurements deliver a huge number of conductance vs.\ electrode separation traces. Along such measurements the target molecules may bind to the electrodes in different geometries, and the evolution and rupture of the single-molecule junction may also follow distinct trajectories. The unraveling of the various typical trace classes is a prerequisite of the proper physical interpretation of the data. Here we exploit the efficient feature recognition properties of neural networks to automatically find the relevant trace classes. To eliminate the need for manually labeled training data we apply a combined method, which automatically selects training traces according to the extreme values of principal component projections or some auxiliary measured quantities, and then the network captures the features of these characteristic traces, and generalizes its inference to the entire dataset. The use of a simple neural network structure also enables a direct insight to the decision making mechanism. We demonstrate that this combined machine learning method is efficient in the unsupervised recognition of unobvious, but highly relevant trace classes within low and room temperature gold-4,4' bipyridine-gold single molecule break junction data.
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Submitted 9 January, 2020;
originally announced January 2020.
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Temporal correlations and structural memory effects in break junction measurements
Authors:
A. Magyarkuti,
K. P. Lauritzen,
Z. Balogh,
A. Nyáry,
G. Mészáros,
P. Makk,
G. C. Solomon,
A. Halbritter
Abstract:
We review data analysis techniques that can be used to study temporal correlations among conductance traces in break junction measurements. We show that temporal histograms are a simple but efficient tool to check the temporal homogeneity of the conductance traces, or to follow spontaneous or triggered temporal variations, like structural modifications in trained contacts, or the emergence of sing…
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We review data analysis techniques that can be used to study temporal correlations among conductance traces in break junction measurements. We show that temporal histograms are a simple but efficient tool to check the temporal homogeneity of the conductance traces, or to follow spontaneous or triggered temporal variations, like structural modifications in trained contacts, or the emergence of single-molecule signatures after molecule dosing. To statistically analyze the presence and the decay time of temporal correlations, we introduce shifted correlation plots. Finally, we demonstrate that correlations between opening and subsequent closing traces may indicate structural memory effects in atomic-sized metallic and molecular junctions. Applying these methods on measured and simulated gold metallic contacts as a test system, we show that the surface diffusion induced flattening of the broken junctions helps to produce statistically independent conductance traces at room temperature, whereas at low temperature repeating tendencies are observed as long as the contacts are not closed to sufficiently high conductance setpoints. Applying opening-closing correlation analysis on Pt-CO-Pt single-molecule junctions, we demonstrate pronounced contact memory effects and recovery of the molecule for junctions breaking before atomic chains are formed. However, if chains are pulled the random relaxation of the chain and molecule after rupture prevents opening-closing correlations.
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Submitted 5 December, 2016;
originally announced December 2016.
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Asymmetry-induced resistive switching in Ag-Ag$_{2}$S-Ag memristors enabling a simplified atomic-scale memory design
Authors:
A. Gubicza,
D. Zs. Manrique,
L. Pósa,
C. J. Lambert,
G. Mihály,
M. Csontos,
A. Halbritter
Abstract:
Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching memory cell. Here we demonstrate equivalent, stable switching behavior in metallic Ag-Ag$_{2}$S-Ag nan…
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Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching memory cell. Here we demonstrate equivalent, stable switching behavior in metallic Ag-Ag$_{2}$S-Ag nanojunctions at room temperature. Our experimental results and numerical simulations reveal that the polarity of the switchings is solely determined by the geometrical asymmetry of the electrode surfaces. By the lithographical design of a proof of principle device we demonstrate the merits of simplified fabrication of atomic-scale, robust planar Ag$_{2}$S memory cells.
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Submitted 14 April, 2016;
originally announced April 2016.
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Pulling Platinum Atomic Chains by Carbon Monoxide Molecules
Authors:
Péter Makk,
Zoltán Balogh,
Szabolcs Csonka,
András Halbritter
Abstract:
The interaction of carbon monoxide molecules with atomic-scale platinum nanojunctions is investigated by low temperature mechanically controllable break junction experiments. Combining plateaus' length analysis, two dimensional conductance-displacement histograms and conditional correlation analysis a comprehensive microscopic picture is proposed about the formation and evolution of Pt-CO-Pt singl…
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The interaction of carbon monoxide molecules with atomic-scale platinum nanojunctions is investigated by low temperature mechanically controllable break junction experiments. Combining plateaus' length analysis, two dimensional conductance-displacement histograms and conditional correlation analysis a comprehensive microscopic picture is proposed about the formation and evolution of Pt-CO-Pt single-molecule configurations. Our analysis implies that before pure Pt monoatomic chains would be formed a CO molecule infiltrates the junction, first in a configuration being perpendicular to the contact axis. This molecular junction is strong enough to pull a monoatomic platinum chain with the molecule being incorporated in the chain. Along the chain formation the molecule can either stay in the perpendicular configuration, or rotate to a parallel configuration. The evolution of the single-molecule configurations along the junction displacement shows quantitative agreement with theoretical predictions, justifying the interpretation in terms of perpendicular and parallel molecular alignment. Our analysis demonstrates that the combination of two dimensional conductance-displacement histograms with conditional correlation analysis is a useful tool to separately analyze fundamentally different types of junction trajectories in single molecule break junction experiments.
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Submitted 18 January, 2016;
originally announced January 2016.
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Alternative types of molecule-decorated atomic chains in Au-CO-Au single-molecule junctions
Authors:
Zoltán Balogh,
Péter Makk,
András Halbritter
Abstract:
We investigate the formation and evolution of Au-CO single-molecule break junctions. The conductance histogram exhibits two distinct molecular configurations, which are further investigated by a combined statistical analysis. According to conditional histogram and correlation analysis these molecular configurations show strong anticorrelations with each other and with pure Au monoatomic junctions…
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We investigate the formation and evolution of Au-CO single-molecule break junctions. The conductance histogram exhibits two distinct molecular configurations, which are further investigated by a combined statistical analysis. According to conditional histogram and correlation analysis these molecular configurations show strong anticorrelations with each other and with pure Au monoatomic junctions and atomic chains. We identify molecular precursor configurations with somewhat higher conductance which are formed prior to single-molecule junctions. According to detailed length analysis two distinct types of molecule-affected chain formation processes are observed, and we compare these results to former theoretical calculations considering bridge and atop type molecular configurations where the latter has reduced conductance due to destructive Fano interference.
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Submitted 8 January, 2016;
originally announced January 2016.
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Precursor configurations and post-rupture evolution of Ag-CO-Ag single-molecule junctions
Authors:
Zoltán Balogh,
Dávid Visontai,
Péter Makk,
Katalin Gillemot,
László Oroszlány,
László Pósa,
Colin Lambert,
András Halbritter
Abstract:
Experimental correlation analysis and first-principles theory are used to probe the structure and evolution of Ag-CO-Ag single-molecule junctions, both before the formation, and after the rupture of the junctions. Two dimensional correlation histograms and conditional histograms demonstrate that prior to the single-molecule bridge configuration the CO molecule is already bound parallel to the Ag s…
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Experimental correlation analysis and first-principles theory are used to probe the structure and evolution of Ag-CO-Ag single-molecule junctions, both before the formation, and after the rupture of the junctions. Two dimensional correlation histograms and conditional histograms demonstrate that prior to the single-molecule bridge configuration the CO molecule is already bound parallel to the Ag single-atom contact. This molecular precursor configuration is accompanied by the opening of additional conductance channels compared to the single-channel transport in pure Ag monoatomic junctions. To investigate the post-rupture evolution of the junction we introduce a cross-correlation analysis between the opening and the subsequent closing conductance traces. This analysis implies that the molecule is bound rigidly to the apex of one electrode, and so the same single-molecule configuration is re-established as the junction is closed. The experimental results are confirmed by ab initio simulations of the evolution of contact geometries, transmission eigenvalues and scattering wavefunctions.
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Submitted 8 January, 2016;
originally announced January 2016.
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GHz Operation of Nanometer-Scale Metallic Memristors: Highly Transparent Conductance Channels in Ag$_{2}$S Devices
Authors:
A. Geresdi,
M. Csontos,
A. Gubicza,
A. Halbritter,
G. Mihály
Abstract:
The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag$_{2}$S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive switching on the nanosecond time scale. Utilizing point contact Andreev reflection spectroscopy we…
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The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag$_{2}$S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive switching on the nanosecond time scale. Utilizing point contact Andreev reflection spectroscopy we studied the nature of electron transport in the active volume of the memristive junctions showing that both the ON and OFF states correspond to truly nanometer scale, highly transparent metallic channels. Our results demonstrate the merits of Ag$_{2}$S nanojunctions as nanometer-scale memory cells with GHz operation frequencies.
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Submitted 18 October, 2013;
originally announced October 2013.
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From stochastic single atomic switch to nanoscale resistive memory device
Authors:
A. Geresdi,
A. Halbritter,
A. Gyenis,
P. Makk,
G. Mihály
Abstract:
Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to the nanometer sizes. Here we study the switching characteristics of nanoscale junctions created between a tungsten tip and a silver film covered by a thin ionic c…
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Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to the nanometer sizes. Here we study the switching characteristics of nanoscale junctions created between a tungsten tip and a silver film covered by a thin ionic conductor layer. Atomic-sized junctions show spectacular current induced switching characteristics, but both the magnitude of the switching voltage and the direction of the switching vary randomly for different junctions. In contrast, for somewhat larger junctions with diameters of a few nanometers a well defined, reproducible switching behavior is observed which is associated with the formation and destruction of nanoscale channels in the ionic conductor surface layer. Our results define a low size limit of 3 nm for reliable ionic nano-switches, which is well below the resolution of recent lithographic techniques.
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Submitted 22 April, 2011; v1 submitted 28 June, 2010;
originally announced June 2010.
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Transition from coherent mesoscopic single particle transport to proximity Josephson-current
Authors:
A. Geresdi,
A. Halbritter,
G. Mihály
Abstract:
The transport through a metal-superconductor interface is governed by a special charge conversion process, the Andreev reflection, where each incident electron drags another electron with itself to form a Cooper pair. At the normal side a hole is left behind dressed by superconducting correlations. For a low transparency interface the simultaneous transfer of two charges is strongly suppressed lea…
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The transport through a metal-superconductor interface is governed by a special charge conversion process, the Andreev reflection, where each incident electron drags another electron with itself to form a Cooper pair. At the normal side a hole is left behind dressed by superconducting correlations. For a low transparency interface the simultaneous transfer of two charges is strongly suppressed leading to a reduced conductance. Here we demonstrate that this reduced conductance can be turned to an infinite one by tuning the nanoscale geometry. Creating variable size nanojunctions between a thin metallic film and a superconducting tip we study how multiple phase-coherent scatterings enhance the superconducting correlations at the normal side. By increasing the coherent volume of carriers initially the transmission through the interface is continuously enhanced. However, as the phase-coherent volume reaches the opposite surface of the thin film a resonator is formed, and a robust transition is induced due to Cooper pair condensation.
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Submitted 22 April, 2011; v1 submitted 24 June, 2010;
originally announced June 2010.
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Regular atomic narrowing of Ni, Fe and V nanowires resolved by 2D correlation analysis
Authors:
A. Halbritter,
P. Makk,
Sz. Mackowiak,
Sz. Csonka,
M. Wawrzyniak,
J. Martinek
Abstract:
We present a novel statistical method for the study of stable atomic configurations in breaking nanowires based on the 2D cross-correlation analysis of conductance versus electrode separation traces. Applying this method, we can clearly resolve the typical evolutions of the conductance staircase in some transition metal nanojunctions (Ni, Fe, V) up to high conductance values. In these metals our a…
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We present a novel statistical method for the study of stable atomic configurations in breaking nanowires based on the 2D cross-correlation analysis of conductance versus electrode separation traces. Applying this method, we can clearly resolve the typical evolutions of the conductance staircase in some transition metal nanojunctions (Ni, Fe, V) up to high conductance values. In these metals our analysis demonstrates a very well ordered atomic narrowing of the nanowire, indicating a very regular, stepwise decrease of the number of atoms in the minimal cross section of the junction, in contrast to the majority of the metals. All these features are hidden in traditional conductance histograms.
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Submitted 8 June, 2011; v1 submitted 9 June, 2010;
originally announced June 2010.
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Temperature dependent conductances of deformable molecular devices
Authors:
Balázs Dóra,
András Halbritter
Abstract:
Transport through a molecular device coupled to a vibrational mode is studied. By map** it to the Yu-Anderson model in the large contact broadening limit, the zero bias electric and heat conductances are evaluated non-perturbatively. These exhibit a step from their T=0 value to half of its value as T increases due to the opening of the inelastic scattering channel. The spectral function exhibi…
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Transport through a molecular device coupled to a vibrational mode is studied. By map** it to the Yu-Anderson model in the large contact broadening limit, the zero bias electric and heat conductances are evaluated non-perturbatively. These exhibit a step from their T=0 value to half of its value as T increases due to the opening of the inelastic scattering channel. The spectral function exhibits the Franck-Condon suppressed multiphonon steps. The Wiedemann-Franz law is satisfied at low and high temperatures, but is violated in between. Relations to experiments are discussed.
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Submitted 4 June, 2009;
originally announced June 2009.
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Interaction of hydrogen molecules with superconducting nanojunctions
Authors:
P. Makk,
Sz. Csonka,
A. Halbritter
Abstract:
In this paper the interaction of hydrogen molecules with atomic-sized superconducting nanojunctions is studied. It is demonstrated by conductance histogram measurements that the superconductors niobium, tantalum and aluminum show a strong interaction with hydrogen, whereas for lead a slight interaction is observed, and for tin and indium no significant interaction is detectable. For Nb, Ta and P…
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In this paper the interaction of hydrogen molecules with atomic-sized superconducting nanojunctions is studied. It is demonstrated by conductance histogram measurements that the superconductors niobium, tantalum and aluminum show a strong interaction with hydrogen, whereas for lead a slight interaction is observed, and for tin and indium no significant interaction is detectable. For Nb, Ta and Pb subgap method is applied to determine the transmission eigenvalues of the nanojunctions in hydrogen environment. It is shown, that in Nb and Ta the mechanical behavior of the junction is spectacularly influenced by hydrogen reflected by extremely long conductance traces, but the electronic properties based on the transmission eigenvalues are similar to those of pure junctions. Evidences for the formation of a single-molecule bridge between the electrodes -- as in recently studied platinum hydrogen system -- were not found.
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Submitted 10 February, 2008;
originally announced February 2008.
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Nanoscale spin-polarization in dilute magnetic semiconductor (In,Mn)Sb
Authors:
A. Geresdi,
A. Halbritter,
M. Csontos,
Sz. Csonka,
G. Mihaly,
T. Wojtowicz,
X. Liu,
B. Janko,
J. K. Furdyna
Abstract:
Results of point contact Andreev reflection (PCAR) experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagnet interface. We investigate the influence of surface transparency, and study the crossover from ballistic to diffusive transport regime as contact size is varied. Application of a Nb tip to a (In,Mn)Sb sample with Cur…
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Results of point contact Andreev reflection (PCAR) experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagnet interface. We investigate the influence of surface transparency, and study the crossover from ballistic to diffusive transport regime as contact size is varied. Application of a Nb tip to a (In,Mn)Sb sample with Curie temperature Tc of 5.4 K allowed the determination of spin-polarization when the ferromagnetic phase transition temperature is crossed. We find a striking difference between the temperature dependence of the local spin polarization and of the macroscopic magnetization, and demonstrate that nanoscale clusters with magnetization close to the saturated value are present even well above the magnetic phase transition temperature.
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Submitted 9 January, 2008;
originally announced January 2008.
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Huge negative differential conductance in Au-H2 molecular nanojunctions
Authors:
A. Halbritter,
P. Makk,
Sz. Csonka,
G. Mihaly
Abstract:
Experimental results showing huge negative differential conductance in gold-hydrogen molecular nanojunctions are presented. The results are analyzed in terms of two-level system (TLS) models: it is shown that a simple TLS model cannot produce peaklike structures in the differential conductance curves, whereas an asymmetrically coupled TLS model gives perfect fit to the data. Our analysis implies…
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Experimental results showing huge negative differential conductance in gold-hydrogen molecular nanojunctions are presented. The results are analyzed in terms of two-level system (TLS) models: it is shown that a simple TLS model cannot produce peaklike structures in the differential conductance curves, whereas an asymmetrically coupled TLS model gives perfect fit to the data. Our analysis implies that the excitation of a bound molecule to a large number of energetically similar loosely bound states is responsible for the peaklike structures. Recent experimental studies showing related features are discussed within the framework of our model.
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Submitted 19 February, 2008; v1 submitted 14 June, 2007;
originally announced June 2007.
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Pulling gold nanowires with a hydrogen clamp
Authors:
Sz. Csonka,
A. Halbritter,
G. Mihaly
Abstract:
In this paper an experimental study of the interaction of hydrogen molecules with gold nanowires is presented. Our results show, that chains of Au atoms can also be pulled in hydrogen environment, however in this case the conductance of the chain is strongly reduced compared to the perfect transmission of pure Au chains. The comparison of our experiments with recent theoretical prediction for th…
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In this paper an experimental study of the interaction of hydrogen molecules with gold nanowires is presented. Our results show, that chains of Au atoms can also be pulled in hydrogen environment, however in this case the conductance of the chain is strongly reduced compared to the perfect transmission of pure Au chains. The comparison of our experiments with recent theoretical prediction for the hydrogen welding of Au nanowires implies that a hydrogen molecule can even be incorporated in the gold nanocontact, and this hydrogen clamp is strong enough to pull a chain of gold atoms.
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Submitted 28 November, 2005; v1 submitted 17 February, 2005;
originally announced February 2005.
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Slow two-level systems in point contacts
Authors:
A. Halbritter,
L. Borda,
A. Zawadowski
Abstract:
A great variety of experiments, like heat release measurements, acoustic measurements, and transport measurements on mesoscopic samples have proved that two level systems (TLSs) have a crucial role in the low temperature thermal and electric properties of disordered systems. This paper is aimed at reviewing the role of slow TLSs in point contacts. First the theory of point contacts is summarized…
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A great variety of experiments, like heat release measurements, acoustic measurements, and transport measurements on mesoscopic samples have proved that two level systems (TLSs) have a crucial role in the low temperature thermal and electric properties of disordered systems. This paper is aimed at reviewing the role of slow TLSs in point contacts. First the theory of point contacts is summarized, concentrating on the discussion of different point contact models, and on the different regimes of electron flow in the contact, mainly focusing on the ballistic and diffusive limit. The Boltzmann equation is solved in both regimes, and the position dependence of the electrical potential is determined. Then the scattering processes in point contacts are investigated, particularly concentrating on the scattering on slow TLSs. If the the electron assisted transitions between the two states are negligible the electron-two level system interaction can be treated with a simplified Hamiltonian. The scattering on such slow TLSs causes nonlinearity in the current-voltage characteristics of the point contact, which can be determined using Fermi's golden role. These calculations are presented showing both the contribution of elastic and inelastic scattering, and including the dependence on the position of the TLS, and on the effect of high frequency irradiation. These results are used to discuss the differences between these slow TLSs and the fast centers which may be described by the two channel Kondo model. The available experimental results are analyzed, distinguishing between the effects due to the different types of TLSs.
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Submitted 1 July, 2004;
originally announced July 2004.
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Conductance of Pd-H nanojunctions
Authors:
Sz. Csonka,
A. Halbritter,
G. Mihaly,
O. I. Shklyarevskii,
S. Speller,
H. van Kempen
Abstract:
Results of an experimental study of palladium nanojunctions in hydrogen environment are presented. Two new hydrogen-related atomic configurations are found, which have a conductances of ~0.5 and ~1 quantum unit (2e^2/h). Phonon spectrum measurements demonstrate that these configurations are situated between electrodes containing dissolved hydrogen. The crucial differences compared to the previou…
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Results of an experimental study of palladium nanojunctions in hydrogen environment are presented. Two new hydrogen-related atomic configurations are found, which have a conductances of ~0.5 and ~1 quantum unit (2e^2/h). Phonon spectrum measurements demonstrate that these configurations are situated between electrodes containing dissolved hydrogen. The crucial differences compared to the previously studied Pt-H_2 junctions, and the possible microscopic realizations of the new configurations in palladium-hydrogen atomic-sized contacts are discussed.
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Submitted 22 April, 2004;
originally announced April 2004.
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Hydrogen-assisted distortion of gold nanowires
Authors:
A. Halbritter,
Sz. Csonka,
G. Mihaly,
O. I. Shklyarevskii,
S. Speller,
H. van Kempen
Abstract:
In this paper the influence of adsorbed hydrogen on the behavior of gold nanojunctions is investigated. It is found, that the hydrogen environment has a strong effect on the conductance of atomic-sized gold junctions, which is markedly reflected by the growth of an additional peak in the conductance histogram at 0.5 quantum unit, 2e^2/h. The statistical analysis of the conductance traces implies…
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In this paper the influence of adsorbed hydrogen on the behavior of gold nanojunctions is investigated. It is found, that the hydrogen environment has a strong effect on the conductance of atomic-sized gold junctions, which is markedly reflected by the growth of an additional peak in the conductance histogram at 0.5 quantum unit, 2e^2/h. The statistical analysis of the conductance traces implies that the new peak arises due to the hydrogen-assisted distortion of atomic gold chains.
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Submitted 7 April, 2004;
originally announced April 2004.
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Quantum interference structures in the conductance plateaus of gold nanojunctions
Authors:
A. Halbritter,
Sz. Csonka,
G. Mihály,
O. I. Shklyarevskii,
S. Speller,
H. van Kempen
Abstract:
The conductance of breaking metallic nanojunctions shows plateaus alternated with sudden jumps, corresponding to the stretching of stable atomic configurations and atomic rearrangements, respectively. We investigate the structure of the conductance plateaus both by measuring the voltage dependence of the plateaus' slope on individual junctions and by a detailed statistical analysis on a large am…
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The conductance of breaking metallic nanojunctions shows plateaus alternated with sudden jumps, corresponding to the stretching of stable atomic configurations and atomic rearrangements, respectively. We investigate the structure of the conductance plateaus both by measuring the voltage dependence of the plateaus' slope on individual junctions and by a detailed statistical analysis on a large amount of contacts. Though the atomic discreteness of the junction plays a fundamental role in the evolution of the conductance, we find that the fine structure of the conductance plateaus is determined by quantum interference phenomenon to a great extent.
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Submitted 24 February, 2004; v1 submitted 3 November, 2003;
originally announced November 2003.
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Transition from tunneling to direct contact in tungsten nanojunctions
Authors:
A. Halbritter,
Sz. Csonka,
G. Mihaly,
E. Jurdik,
O. Yu. Kolesnychenko,
O. I. Shklyarevskii,
S. Speller,
H. van Kempen
Abstract:
We apply the mechanically controllable break junctions technique to investigate the transition from tunneling to direct contact in tungsten. This transition is quite different from that of other metals and is determined by the local electronic properties of the tungsten surface and the relief of the electrodes at the point of their closest proximity. The conductance traces show a rich variety of…
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We apply the mechanically controllable break junctions technique to investigate the transition from tunneling to direct contact in tungsten. This transition is quite different from that of other metals and is determined by the local electronic properties of the tungsten surface and the relief of the electrodes at the point of their closest proximity. The conductance traces show a rich variety of patterns from the avalanche-like jump to a mesoscopic contact to the completely smooth transition between direct contact and tunneling. Due to the occasional absence of an adhesive jump the conductance of the contact can be continuously monitored at ultra-small electrode separations. The conductance histograms of tungsten are either featureless or show two distinct peaks related to the sequential opening of spatially separated groups of conductance channels. The role of surface states of tungsten and their contribution to the junction conductance at sub-Angstrom electrode separations are discussed.
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Submitted 17 April, 2003;
originally announced April 2003.
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Connective neck evolution and conductance steps in hot point contacts
Authors:
A. Halbritter,
Sz. Csonka,
O. Yu. Kolesnychenko,
G. Mihaly,
O. I. Shklyarevskii,
H. van Kempen
Abstract:
Dynamic evolution of the connective neck in Al and Pb mechanically controllable break junctions was studied during continuous approach of electrodes at bias voltages V_b up to a few hundred mV. A high level of power dissipation (10^-4 - 10^-3 W) and high current density (j > 10^10 A/cm^2) in the constriction lead to overheating of the contact area, electromigration and current-enhanced diffusion…
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Dynamic evolution of the connective neck in Al and Pb mechanically controllable break junctions was studied during continuous approach of electrodes at bias voltages V_b up to a few hundred mV. A high level of power dissipation (10^-4 - 10^-3 W) and high current density (j > 10^10 A/cm^2) in the constriction lead to overheating of the contact area, electromigration and current-enhanced diffusion of atoms out of the "hot spot". At a low electrode approach rate (10 - 50 pm/s) the transverse dimension of the neck and the conductance of the junction depend on V_b and remain nearly constant over the approach distance of 10 - 30 nm. For V_b > 300 mV the connective neck consists of a few atoms only and the quantum nature of conductance manifests itself in abrupt steps and reversible jumps between two or more levels. These features are related to an ever changing number of individual conductance channels due to the continuous rearrangement in atomic configuration of the neck, the recurring motion of atoms between metastable states, the formation and breaking of isolated one-atom contacts and the switching between energetically preferable neck geometries.
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Submitted 10 December, 2001;
originally announced December 2001.
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Slow Two-Level Systems in Metallic Point contacts
Authors:
L. Borda,
A. Halbritter,
A. Zawadowski
Abstract:
This paper was withdrawn by the authors.
This paper was withdrawn by the authors.
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Submitted 24 June, 2004; v1 submitted 30 July, 2001;
originally announced July 2001.
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Giant Magnetoresistance at the Interface of Iron Thin Films
Authors:
J. Balogh,
L. F. Kiss,
A. Halbritter,
I. Kézsmárki,
G. Mihály
Abstract:
Ag/Fe/Ag and Cr/Fe/Cr trilayers with a single $25 nm$ thick ferromagnetic layer exhibit giant magnetoresistance (GMR) type behavior. The resistance decreases for parallel and transversal magnetic field alignements with a Langevin-type magnetic field dependence up to B=12 T. The phenomenon is explained by a granular interface structure. Results on Fe/Ag multilayers are also interpreted in terms o…
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Ag/Fe/Ag and Cr/Fe/Cr trilayers with a single $25 nm$ thick ferromagnetic layer exhibit giant magnetoresistance (GMR) type behavior. The resistance decreases for parallel and transversal magnetic field alignements with a Langevin-type magnetic field dependence up to B=12 T. The phenomenon is explained by a granular interface structure. Results on Fe/Ag multilayers are also interpreted in terms of a granular interface magnetoresistance.
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Submitted 29 November, 2000;
originally announced November 2000.
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Search for Magnetic Field Induced Gap in a High-Tc Superconductor
Authors:
G. Mihaly,
A. Halbritter,
L. Mihaly,
L. Forro
Abstract:
Break junctions made of the optimally doped high temperature superconductor Bi2Sr2Ca2CuO8 with Tc of 90 K has been investigated in magnetic fields up to 12 T, at temperatures from 4.2 K to Tc. The junction resistance varied between 1kOhm and 300kOhm. The differential conductance at low biases did not exhibit a significant magnetic field dependence, indicating that a magnetic-field-induced gap (K…
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Break junctions made of the optimally doped high temperature superconductor Bi2Sr2Ca2CuO8 with Tc of 90 K has been investigated in magnetic fields up to 12 T, at temperatures from 4.2 K to Tc. The junction resistance varied between 1kOhm and 300kOhm. The differential conductance at low biases did not exhibit a significant magnetic field dependence, indicating that a magnetic-field-induced gap (Krishana et al., Science 277 83 (1997)), if exists, must be smaller than 0.25 meV.
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Submitted 24 February, 2000;
originally announced February 2000.
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Transport properties and point contact spectra of Ni_xNb_{1-x} metallic glasses
Authors:
A. Halbritter,
O. Yu. Kolesnychenko,
G. Mihaly,
O. I. Shklyarevskii,
H. van Kempen
Abstract:
Bulk resistivity and point contact spectra of Ni_xNb_{1-x} metallic glasses have been investigated as functions of temperature (0.3-300K) and magnetic field (0-12T). Metallic glasses in this family undergo a superconducting phase transition determined by the Nb concentration. When superconductivity was suppressed by a strong magnetic field, both the bulk sample R(T) and the point contact differe…
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Bulk resistivity and point contact spectra of Ni_xNb_{1-x} metallic glasses have been investigated as functions of temperature (0.3-300K) and magnetic field (0-12T). Metallic glasses in this family undergo a superconducting phase transition determined by the Nb concentration. When superconductivity was suppressed by a strong magnetic field, both the bulk sample R(T) and the point contact differential resistance curves of Ni_xNb_{1-x} showed logarithmic behavior at low energies, which is explained by a strong electron - "two level system" coupling. We studied the temperature, magnetic field and contact resistance dependence of Ni_{44}Nb_{56} point-contact spectra in the superconducting state and found telegraph-like fluctuations superimposed on superconducting characteristics. These R(V) characteristics are extremely sensitive detectors for slow relaxing "two level system" motion.
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Submitted 1 February, 2000; v1 submitted 10 January, 2000;
originally announced January 2000.
