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Visualizing moiré ferroelectricity via plasmons and nano-photocurrent in graphene/twisted-WSe2 structures
Authors:
Shuai Zhang,
Yang Liu,
Zhiyuan Sun,
Xinzhong Chen,
Baichang Li,
S. L. Moore,
Song Liu,
Zhiying Wang,
S. E. Rossi,
Ran **g,
Jordan Fonseca,
Birui Yang,
Yinming Shao,
Chun-Ying Huang,
Taketo Handa,
Lin Xiong,
Matthew Fu,
Tsai-Chun Pan,
Dorri Halbertal,
Xinyi Xu,
Wenjun Zheng,
P. J. Schuck,
A. N. Pasupathy,
C. R. Dean,
Xiaoyang Zhu
, et al. (6 additional authors not shown)
Abstract:
Ferroelectricity, a spontaneous and reversible electric polarization, is found in certain classes of van der Waals (vdW) material heterostructures. The discovery of ferroelectricity in twisted vdW layers provides new opportunities to engineer spatially dependent electric and optical properties associated with the configuration of moiré superlattice domains and the network of domain walls. Here, we…
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Ferroelectricity, a spontaneous and reversible electric polarization, is found in certain classes of van der Waals (vdW) material heterostructures. The discovery of ferroelectricity in twisted vdW layers provides new opportunities to engineer spatially dependent electric and optical properties associated with the configuration of moiré superlattice domains and the network of domain walls. Here, we employ near-field infrared nano-imaging and nano-photocurrent measurements to study ferroelectricity in minimally twisted WSe2. The ferroelectric domains are visualized through the imaging of the plasmonic response in a graphene monolayer adjacent to the moiré WSe2 bilayers. Specifically, we find that the ferroelectric polarization in moiré domains is imprinted on the plasmonic response of the graphene. Complementary nano-photocurrent measurements demonstrate that the optoelectronic properties of graphene are also modulated by the proximal ferroelectric domains. Our approach represents an alternative strategy for studying moiré ferroelectricity at native length scales and opens promising prospects for (opto)electronic devices.
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Submitted 12 September, 2023;
originally announced September 2023.
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Domain-dependent surface adhesion in twisted few-layer graphene: Platform for moiré-assisted chemistry
Authors:
Valerie Hsieh,
Dorri Halbertal,
Nathan R. Finney,
Ziyan Zhu,
Eli Gerber,
Michele Pizzochero,
Emine Kucukbenli,
Gabriel R. Schleder,
Mattia Angeli,
Kenji Watanabe,
Takashi Taniguchi,
Eun-Ah Kim,
Efthimios Kaxiras,
James Hone,
Cory R. Dean,
D. N. Basov
Abstract:
Twisted van der Waals multilayers are widely regarded as a rich platform to access novel electronic phases, thanks to the multiple degrees of freedom such as layer thickness and twist angle that allow control of their electronic and chemical properties. Here, we propose that the stacking domains that form naturally due to the relative twist between successive layers act as an additional "knob" for…
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Twisted van der Waals multilayers are widely regarded as a rich platform to access novel electronic phases, thanks to the multiple degrees of freedom such as layer thickness and twist angle that allow control of their electronic and chemical properties. Here, we propose that the stacking domains that form naturally due to the relative twist between successive layers act as an additional "knob" for controlling the behavior of these systems, and report the emergence and engineering of stacking domain-dependent surface chemistry in twisted few-layer graphene. Using mid-infrared near-field optical microscopy and atomic force microscopy, we observe a selective adhesion of metallic nanoparticles and liquid water at the domains with rhombohedral stacking configurations of minimally twisted double bi- and tri-layer graphene. Furthermore, we demonstrate that the manipulation of nanoparticles located at certain stacking domains can locally reconfigure the moiré superlattice in their vicinity at the μm-scale. In addition, we report first-principles simulations of the energetics of adhesion of metal atoms and water molecules on the stacking domains in an attempt to elucidate the origin of the observed selective adhesion. Our findings establish a new approach to controlling moiré-assisted chemistry and nanoengineering.
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Submitted 27 April, 2023; v1 submitted 19 October, 2022;
originally announced October 2022.
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Unconventional Nonlocal Relaxation Dynamics in a Twisted Graphene Moire Superlattice
Authors:
Dorri Halbertal,
Simon Turkel,
Christopher J. Ciccarino,
Jonas Profe,
Nathan Finney,
Valerie Hsieh,
Kenji Watanabe,
Takashi Taniguchi,
James Hone,
Cory Dean,
Prineha Narang,
Abhay N. Pasupathy,
Dante M. Kennes,
D. N. Basov
Abstract:
The electronic and structural properties of atomically thin materials can be controllably tuned by assembling them with an interlayer twist. During this process, constituent layers spontaneously rearrange themselves in search of a lowest energy configuration. Such relaxation phenomena can lead to unexpected and novel material properties. Here, we study twisted double trilayer graphene (TDTG) using…
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The electronic and structural properties of atomically thin materials can be controllably tuned by assembling them with an interlayer twist. During this process, constituent layers spontaneously rearrange themselves in search of a lowest energy configuration. Such relaxation phenomena can lead to unexpected and novel material properties. Here, we study twisted double trilayer graphene (TDTG) using nano-optical and tunneling spectroscopy tools. We reveal a surprising optical and electronic contrast, as well as a stacking energy imbalance emerging between the moiré domains. We attribute this contrast to an unconventional form of lattice relaxation in which an entire graphene layer spontaneously shifts position during fabrication. We analyze the energetics of this transition and demonstrate that it is the result of a non-local relaxation process, in which an energy gain in one domain of the moire lattice is paid for by a relaxation that occurs in the other.
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Submitted 19 January, 2023; v1 submitted 22 August, 2022;
originally announced August 2022.
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Moiré Modulated Lattice Strain and Thickness-Dependent Lattice Expansion in Epitaxial Ultrathin Films of PdTe$_2$
Authors:
Jacob Cook,
Dorri Halbertal,
Qiangsheng Lu,
Mathew Snyder,
Yew San Hor,
Dmitri N. Basov,
Guang Bian
Abstract:
We report the epitaxial growth of PdTe$_2$ ultrathin films on topological insulator Bi$_2$Se$_3$. A prominent Moiré pattern was observed in STM measurements. The Moiré periodicity increases as film thickness decreases, indicating a lattice expansion of epitaxial PdTe$_2$ thin films with lower thicknesses. In addition, our simulations based on Moiré Metrology reveal uniaxial lattice strains at the…
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We report the epitaxial growth of PdTe$_2$ ultrathin films on topological insulator Bi$_2$Se$_3$. A prominent Moiré pattern was observed in STM measurements. The Moiré periodicity increases as film thickness decreases, indicating a lattice expansion of epitaxial PdTe$_2$ thin films with lower thicknesses. In addition, our simulations based on Moiré Metrology reveal uniaxial lattice strains at the edge of PdTe$_2$ domains, and anisotropic strain distributions throughout the Moiré supercell with a net change in lattice strain up to ~2.9%. Our DFT calculations show that this strain effect leads to a narrowing of the band gap at $Γ$ point near the Fermi level. Under a strain of ~2.8%, the band gap at $Γ$ closes completely. Further increasing the lattice strain makes the band gap reopen and the order of conduction band and valence bands inverted in energy. The results offer a proof of concept for constructing quantum grids of topological materials under the modulation of Moiré potentials.
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Submitted 22 June, 2022; v1 submitted 14 June, 2022;
originally announced June 2022.
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Multi-layered atomic relaxation in van der Waals heterostructures
Authors:
Dorri Halbertal,
Lennart Klebl,
Valerie Hsieh,
Jacob Cook,
Stephen Carr,
Guang Bian,
Cory Dean,
Dante M. Kennes,
Dmitri. N. Basov
Abstract:
When two-dimensional van der Waals materials are stacked to build heterostructures, moiré patterns emerge from twisted interfaces or from mismatch in lattice constant of individual layers. Relaxation of the atomic positions is a direct, generic consequence of the moiré pattern, with many implications for the physical properties. Moiré driven atomic relaxation may be naively thought to be restricte…
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When two-dimensional van der Waals materials are stacked to build heterostructures, moiré patterns emerge from twisted interfaces or from mismatch in lattice constant of individual layers. Relaxation of the atomic positions is a direct, generic consequence of the moiré pattern, with many implications for the physical properties. Moiré driven atomic relaxation may be naively thought to be restricted to the interfacial layers and thus irrelevant for multi-layered heterostructures. However, we provide experimental evidence for the importance of the three dimensional nature of the relaxation in two types of van der Waals heterostructures: First, in multi-layer graphene twisted on graphite at small twist angles ($θ\approx0.14^\circ$) we observe propagation of relaxation domains even beyond 18 graphene layers. Second, we show how for multi-layer PdTe$_2$ on Bi$_2$Se$_3$ the moiré lattice constant depends on the number of PdTe$_2$ layers. Motivated by the experimental findings, we developed a continuum approach to model multi-layered relaxation processes based on the generalized stacking fault energy functional given by ab-initio simulations. Leveraging the continuum property of the approach enables us to access large scale regimes and achieve agreement with our experimental data for both systems. Furthermore it is well known that the electronic structure of graphene sensitively depends on local lattice deformations. Therefore we study the impact of multi-layered relaxation on the local density of states of the twisted graphitic system. We identify measurable implications for the system, experimentally accessible by scanning tunneling microscopy. Our multi-layered relaxation approach is not restricted to the discussed systems, and can be used to uncover the impact of an interfacial defect on various layered systems of interest.
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Submitted 14 March, 2023; v1 submitted 13 June, 2022;
originally announced June 2022.
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Dual-gated graphene devices for near-field nano-imaging
Authors:
Sai S. Sunku,
Dorri Halbertal,
Rebecca Engelke,
Hyobin Yoo,
Nathan R. Finney,
Nicola Curreli,
Guangxin Ni,
Cheng Tan,
Alexander S. McLeod,
Chiu Fan Bowen Lo,
Cory R. Dean,
James C. Hone,
Philip Kim,
Dmitri N. Basov
Abstract:
Graphene-based heterostructures display a variety of phenomena that are strongly tunable by electrostatic local gates. Monolayer graphene (MLG) exhibits tunable surface plasmon polaritons, as revealed by scanning nano-infrared experiments. In bilayer graphene (BLG), an electronic gap is induced by a perpendicular displacement field. Gapped BLG is predicted to display unusual effects such as plasmo…
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Graphene-based heterostructures display a variety of phenomena that are strongly tunable by electrostatic local gates. Monolayer graphene (MLG) exhibits tunable surface plasmon polaritons, as revealed by scanning nano-infrared experiments. In bilayer graphene (BLG), an electronic gap is induced by a perpendicular displacement field. Gapped BLG is predicted to display unusual effects such as plasmon amplification and domain wall plasmons with significantly larger lifetime than MLG. Furthermore, a variety of correlated electronic phases highly sensitive to displacement fields have been observed in twisted graphene structures. However, applying perpendicular displacement fields in nano-infrared experiments has only recently become possible (Ref. 1). In this work, we fully characterize two approaches to realizing nano-optics compatible top-gates: bilayer $\text{MoS}_2$ and MLG. We perform nano-infrared imaging on both types of structures and evaluate their strengths and weaknesses. Our work paves the way for comprehensive near-field experiments of correlated phenomena and plasmonic effects in graphene-based heterostructures.
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Submitted 21 March, 2021; v1 submitted 19 November, 2020;
originally announced November 2020.
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Hyperbolic enhancement of photocurrent patterns in minimally twisted bilayer graphene
Authors:
Sai S. Sunku,
Dorri Halbertal,
Tobias Stauber,
Shaowen Chen,
Alexander S. McLeod,
Andrey Rikhter,
Michael E. Berkowitz,
Chiu Fan Bowen Lo,
Derick E. Gonzalez-Acevedo,
James C. Hone,
Cory R. Dean,
Michael M. Fogler,
D. N. Basov
Abstract:
Quasi-periodic moiré patterns and their effect on electronic properties of twisted bilayer graphene (TBG) have been intensely studied. At small twist angle $θ$, due to atomic reconstruction, the moiré superlattice morphs into a network of narrow domain walls separating micron-scale AB and BA stacking regions. We use scanning probe photocurrent imaging to resolve nanoscale variations of the Seebeck…
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Quasi-periodic moiré patterns and their effect on electronic properties of twisted bilayer graphene (TBG) have been intensely studied. At small twist angle $θ$, due to atomic reconstruction, the moiré superlattice morphs into a network of narrow domain walls separating micron-scale AB and BA stacking regions. We use scanning probe photocurrent imaging to resolve nanoscale variations of the Seebeck coefficient occurring at these domain walls. The observed features become enhanced in a range of mid-infrared frequencies where the hexagonal boron nitride (hBN), which we use as a TBG substrate, is optically hyperbolic. Our results illustrate new capabilities of nano-photocurrent technique for probing nanoscale electronic inhomogeneities in two-dimensional materials.
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Submitted 21 March, 2021; v1 submitted 10 November, 2020;
originally announced November 2020.
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Deep moiré potentials in twisted transition metal dichalcogenide bilayers
Authors:
Sara Shabani,
Dorri Halbertal,
Wen**g Wu,
Mingxing Chen,
Song Liu,
James Hone,
Wang Yao,
Dmitri N. Basov,
Xiaoyang Zhu,
Abhay N. Pasupathy
Abstract:
In twisted bilayers of semiconducting transition metal dichalcogenides (TMDs), a combination of structural rippling and electronic coupling gives rise to periodic moiré potentials that can confine charged and neutral excitations. Here, we report experimental measurements of the structure and spectroscopic properties of twisted bilayers of WSe2 and MoSe2 in the H-stacking configuration using scanni…
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In twisted bilayers of semiconducting transition metal dichalcogenides (TMDs), a combination of structural rippling and electronic coupling gives rise to periodic moiré potentials that can confine charged and neutral excitations. Here, we report experimental measurements of the structure and spectroscopic properties of twisted bilayers of WSe2 and MoSe2 in the H-stacking configuration using scanning tunneling microscopy (STM). Our experiments reveal that the moiré potential in these bilayers at small angles is unexpectedly large, reaching values of above 300 meV for the valence band and 150 meV for the conduction band - an order of magnitude larger than theoretical estimates based on interlayer coupling alone. We further demonstrate that the moiré potential is a non-monotonic function of moiré wavelength, reaching a maximum at around a 13nm moiré period. This non-monotonicity coincides with a drastic change in the structure of the moiré pattern from a continuous variation of stacking order at small moiré wavelengths to a one-dimensional soliton dominated structure at large moiré wavelengths. We show that the in-plane structure of the moiré pattern is captured well by a continuous mechanical relaxation model, and find that the moiré structure and internal strain rather than the interlayer coupling is the dominant factor in determining the moiré potential. Our results demonstrate the potential of using precision moiré structures to create deeply trapped carriers or excitations for quantum electronics and optoelectronics.
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Submitted 17 August, 2020;
originally announced August 2020.
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Moiré metrology of energy landscapes in van der Waals heterostructures
Authors:
Dorri Halbertal,
Nathan R. Finney,
Sai S. Sunku,
Alexander Kerelsky,
Carmen Rubio-Verdú,
Sara Shabani,
Lede Xian,
Stephen Carr,
Shaowen Chen,
Charles Zhang,
Lei Wang,
Derick Gonzalez-Acevedo,
Alexander S. McLeod,
Daniel Rhodes,
Kenji Watanabe,
Takashi Taniguchi,
Efthimios Kaxiras,
Cory R. Dean,
James C. Hone,
Abhay N. Pasupathy,
Dante M. Kennes,
Angel Rubio,
D. N. Basov
Abstract:
The emerging field of twistronics, which harnesses the twist angle between two-dimensional materials, represents a promising route for the design of quantum materials, as the twist-angle-induced superlattices offer means to control topology and strong correlations. At the small twist limit, and particularly under strain, as atomic relaxation prevails, the emergent moiré superlattice encodes elusiv…
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The emerging field of twistronics, which harnesses the twist angle between two-dimensional materials, represents a promising route for the design of quantum materials, as the twist-angle-induced superlattices offer means to control topology and strong correlations. At the small twist limit, and particularly under strain, as atomic relaxation prevails, the emergent moiré superlattice encodes elusive insights into the local interlayer interaction. Here we introduce moiré metrology as a combined experiment-theory framework to probe the stacking energy landscape of bilayer structures at the 0.1 meV/atom scale, outperforming the gold-standard of quantum chemistry. Through studying the shapes of moiré domains with numerous nano-imaging techniques, and correlating with multi-scale modelling, we assess and refine first-principle models for the interlayer interaction. We document the prowess of moiré metrology for three representative twisted systems: bilayer graphene, double bilayer graphene and H-stacked $MoSe_2/WSe_2$. Moiré metrology establishes sought after experimental benchmarks for interlayer interaction, thus enabling accurate modelling of twisted multilayers.
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Submitted 26 November, 2020; v1 submitted 11 August, 2020;
originally announced August 2020.
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Nonlinear twistoptics at symmetry-broken interfaces
Authors:
Kaiyuan Yao,
Nathan R. Finney,
** Zhang,
Samuel L. Moore,
Lede Xian,
Nicolas Tancogne-Dejean,
Fang Liu,
Jenny Ardelean,
Xinyi Xu,
Dorri Halbertal,
K. Watanabe,
T. Taniguchi,
Hector Ochoa,
Ana Asenjo-Garcia,
Xiaoyang Zhu,
D. N. Basov,
Angel Rubio,
Cory R. Dean,
James Hone,
P. James Schuck
Abstract:
Broken symmetries induce strong nonlinear optical responses in materials and at interfaces. Twist angle can give complete control over the presence or lack of inversion symmetry at a crystal interface, and is thus an appealing knob for tuning nonlinear optical systems. In contrast to conventional nonlinear crystals with rigid lattices, the weak interlayer coupling in van der Waals (vdW) heterostru…
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Broken symmetries induce strong nonlinear optical responses in materials and at interfaces. Twist angle can give complete control over the presence or lack of inversion symmetry at a crystal interface, and is thus an appealing knob for tuning nonlinear optical systems. In contrast to conventional nonlinear crystals with rigid lattices, the weak interlayer coupling in van der Waals (vdW) heterostructures allows for arbitrary selection of twist angle, making nanomechanical manipulation of fundamental interfacial symmetry possible within a single device. Here we report highly tunable second harmonic generation (SHG) from nanomechanically rotatable stacks of bulk hexagonal boron nitride (BN) crystals, and introduce the term twistoptics to describe studies of optical properties in dynamically twistable vdW systems. We observe SHG intensity modulated by a factor of more than 50, polarization patterns determined by moiré interface symmetry, and enhanced conversion efficiency for bulk crystals by stacking multiple pieces of BN joined by symmetry-broken interfaces. Our study provides a foundation for compact twistoptics architectures aimed at efficient, scalable, and tunable frequency-conversion, and demonstrates SHG as a robust probe of buried vdW interfaces.
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Submitted 20 August, 2020; v1 submitted 24 June, 2020;
originally announced June 2020.
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Nano-photocurrent map** of local electronic structure in twisted bilayer graphene
Authors:
Sai S. Sunku,
Alexander S. McLeod,
Tobias Stauber,
Hyobin Yoo,
Dorri Halbertal,
Guangxin Ni,
Aaron Sternbach,
Bor-Yuan Jiang,
Takashi Taniguchi,
Kenji Watanabe,
Philip Kim,
Michael M. Fogler,
D. N. Basov
Abstract:
We report a combined nano-photocurrent and infrared nanoscopy study of twisted bilayer graphene (TBG) enabling access to the local electronic phenomena at length scales as short as 20 nm. We show that the photocurrent changes sign at carrier densities tracking the local superlattice density of states of TBG. We use this property to identify domains of varying local twist angle by local photo-therm…
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We report a combined nano-photocurrent and infrared nanoscopy study of twisted bilayer graphene (TBG) enabling access to the local electronic phenomena at length scales as short as 20 nm. We show that the photocurrent changes sign at carrier densities tracking the local superlattice density of states of TBG. We use this property to identify domains of varying local twist angle by local photo-thermoelectric effect. Consistent with the photocurrent study, infrared nano-imaging experiments reveal optical conductivity features dominated by twist-angle dependent interband transitions. Our results provide a fast and robust method for map** the electronic structure of TBG and suggest that similar methods can be broadly applied to probe electronic inhomogeneities of moiré superlattices in other van der Waals heterostructures.
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Submitted 12 June, 2020;
originally announced June 2020.
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One-Dimensional Moiré Excitons in Transition-Metal Dichalcogenide Heterobilayers
Authors:
Yusong Bai,
Lin Zhou,
Jue Wang,
Wen**g Wu,
Leo McGilly,
Dorri Halbertal,
Chiu Fan B. Lo,
Fang Liu,
Jenny Ardelean,
Pasqual Rivera,
Nathan R. Finney,
Xuchen Yang,
Dmitri N. Basov,
Wang Yao,
Xiaodong Xu,
James Hone,
Abhay Pasupathy,
Xiaoyang Zhu
Abstract:
The formation of interfacial moiré patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer excitons in transition-metal dichalcogenide (TMDC) heterobilayers, signatures of quantum confinement by the moiré landscape have been reported in recent experimental…
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The formation of interfacial moiré patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer excitons in transition-metal dichalcogenide (TMDC) heterobilayers, signatures of quantum confinement by the moiré landscape have been reported in recent experimental studies. Such moiré confinement has offered the exciting possibility to tailor new excitonic systems, such as ordered arrays of zero-dimensional (0D) quantum emitters and their coupling into topological superlattices. A remarkable nature of the moiré potential is its dramatic response to strain, where a small uniaxial strain can tune the array of quantum-dot-like 0D traps into parallel stripes of one-dimensional (1D) quantum wires. Here, we present direct evidence for the 1D moiré potentials from real space imaging and the corresponding 1D moiré excitons from photoluminescence (PL) emission in MoSe2/WSe2 heterobilayers. Whereas the 0D moiré excitons display quantum emitter-like sharp PL peaks with circular polarization, the PL emission from 1D moiré excitons has linear polarization and two orders of magnitude higher intensity. The results presented here establish strain engineering as a powerful new method to tailor moiré potentials as well as their optical and electronic responses on demand.
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Submitted 5 April, 2020; v1 submitted 13 December, 2019;
originally announced December 2019.
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Moiré-less Correlations in ABCA Graphene
Authors:
Alexander Kerelsky,
Carmen Rubio-Verdú,
Lede Xian,
Dante M. Kennes,
Dorri Halbertal,
Nathan Finney,
Larry Song,
Simon Turkel,
Lei Wang,
K. Watanabe,
T. Taniguchi,
James Hone,
Cory Dean,
Dmitri Basov,
Angel Rubio,
Abhay N. Pasupathy
Abstract:
Atomically thin van der Waals materials stacked with an interlayer twist have proven to be an excellent platform towards achieving gate-tunable correlated phenomena linked to the formation of flat electronic bands. In this work we demonstrate the formation of emergent correlated phases in multilayer rhombohedral graphene - a simple material that also exhibits a flat electronic band but without the…
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Atomically thin van der Waals materials stacked with an interlayer twist have proven to be an excellent platform towards achieving gate-tunable correlated phenomena linked to the formation of flat electronic bands. In this work we demonstrate the formation of emergent correlated phases in multilayer rhombohedral graphene - a simple material that also exhibits a flat electronic band but without the need of having a moiré superlattice induced by twisted van der Waals layers. We show that two layers of bilayer graphene that are twisted by an arbitrary tiny angle host large (micron-scale) regions of uniform rhombohedral four-layer (ABCA) graphene that can be independently studied. Scanning tunneling spectroscopy reveals that ABCA graphene hosts an unprecedentedly sharp flat band of 3-5 meV half-width. We demonstrate that when this flat band straddles the Fermi level, a correlated many-body gap emerges with peak-to-peak value of 9.5 meV at charge neutrality. Mean field theoretical calculations indicate that the two primary candidates for the appearance of this broken symmetry state are a charge transfer excitonic insulator and a ferrimagnet. Finally, we show that ABCA graphene hosts surface topological helical edge states at natural interfaces with ABAB graphene which can be turned on and off with gate voltage, implying that small angle twisted double bilayer graphene is an ideal programmable topological quantum material.
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Submitted 5 November, 2019; v1 submitted 31 October, 2019;
originally announced November 2019.
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Imaging work and dissipation in the quantum Hall state in graphene
Authors:
Arthur Marguerite,
John Birkbeck,
Amit Aharon-Steinberg,
Dorri Halbertal,
Kousik Bagani,
Ido Marcus,
Yuri Myasoedov,
Andre K. Geim,
David J. Perello,
Eli Zeldov
Abstract:
Topology is a powerful recent concept asserting that quantum states could be globally protected against local perturbations. Dissipationless topologically protected states are thus of major fundamental interest as well as of practical importance in metrology and quantum information technology. Although topological protection can be robust theoretically, in realistic devices it is often fragile aga…
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Topology is a powerful recent concept asserting that quantum states could be globally protected against local perturbations. Dissipationless topologically protected states are thus of major fundamental interest as well as of practical importance in metrology and quantum information technology. Although topological protection can be robust theoretically, in realistic devices it is often fragile against various dissipative mechanisms, which are difficult to probe directly because of their microscopic origins. By utilizing scanning nanothermometry, we visualize and investigate microscopic mechanisms undermining the apparent topological protection in the quantum Hall state in graphene. Our simultaneous nanoscale thermal and scanning gate microscopy shows that the dissipation is governed by crosstalk between counterpropagating pairs of downstream and upstream channels that appear at graphene boundaries because of edge reconstruction. Instead of local Joule heating, however, the dissipation mechanism comprises two distinct and spatially separated processes. The work generating process that we image directly and which involves elastic tunneling of charge carriers between the quantum channels, determines the transport properties but does not generate local heat. The independently visualized heat and entropy generation process, in contrast, occurs nonlocally upon inelastic resonant scattering off single atomic defects at graphene edges, while not affecting the transport. Our findings offer a crucial insight into the mechanisms concealing the true topological protection and suggest venues for engineering more robust quantum states for device applications.
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Submitted 21 July, 2019;
originally announced July 2019.
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Resonant electron-lattice cooling in graphene
Authors:
Jian Feng Kong,
Leonid Levitov,
Dorri Halbertal,
Eli Zeldov
Abstract:
Controlling energy flows in solids through switchable electron-lattice cooling can grant access to a range of interesting and potentially useful energy transport phenomena. Here we discuss a unique switchable electron-lattice cooling mechanism arising in graphene due to phonon emission mediated by resonant scattering on defects in crystal lattice, which displays interesting analogy to the Purcell…
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Controlling energy flows in solids through switchable electron-lattice cooling can grant access to a range of interesting and potentially useful energy transport phenomena. Here we discuss a unique switchable electron-lattice cooling mechanism arising in graphene due to phonon emission mediated by resonant scattering on defects in crystal lattice, which displays interesting analogy to the Purcell effect in optics. This mechanism strongly enhances the electron-phonon cooling rate, since non-equilibrium carriers in the presence of momentum recoil due to disorder can access a larger phonon phase space and emit phonons more effciently. Resonant energy dependence of phonon emission translates into gate-tunable cooling rates, exhibiting giant enhancement of cooling occurring when the carrier energy is aligned with the electron resonance of the defect.
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Submitted 25 June, 2018; v1 submitted 25 October, 2017;
originally announced October 2017.
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Imaging resonant dissipation from individual atomic defects in graphene
Authors:
Dorri Halbertal,
Moshe Ben Shalom,
Aviram Uri,
Kousik Bagani,
Alexander Y. Meltzer,
Ido Marcus,
Yuri Myasoedov,
John Birkbeck,
Leonid S. Levitov,
Andre K. Geim,
Eli Zeldov
Abstract:
Conversion of electric current into heat involves microscopic processes that operate on nanometer length-scales and release minute amounts of power. While central to our understanding of the electrical properties of materials, individual mediators of energy dissipation have so far eluded direct observation. Using scanning nano-thermometry with sub-micro K sensitivity we visualize and control phono…
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Conversion of electric current into heat involves microscopic processes that operate on nanometer length-scales and release minute amounts of power. While central to our understanding of the electrical properties of materials, individual mediators of energy dissipation have so far eluded direct observation. Using scanning nano-thermometry with sub-micro K sensitivity we visualize and control phonon emission from individual atomic defects in graphene. The inferred electron-phonon 'cooling power spectrum' exhibits sharp peaks when the Fermi level comes into resonance with electronic quasi-bound states at such defects, a hitherto uncharted process. Rare in the bulk but abundant at graphene's edges, switchable atomic-scale phonon emitters define the dominant dissipation mechanism. Our work offers new insights for addressing key materials challenges in modern electronics and engineering dissipation at the nanoscale.
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Submitted 4 October, 2017;
originally announced October 2017.
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Nanoscale thermal imaging of dissipation in quantum systems
Authors:
Dorri Halbertal,
Jo Cuppens,
Moshe Ben Shalom,
Lior Embon,
Nitzan Shadmi,
Yonathan Anahory,
HR Naren,
Jayanta Sarkar,
Aviram Uri,
Yuval Ronen,
Yury Myasoedov,
Leonid Levitov,
Ernesto Joselevich,
Andre Konstantin Geim,
Eli Zeldov
Abstract:
Energy dissipation is a fundamental process governing the dynamics of physical, chemical, and biological systems. It is also one of the main characteristics distinguishing quantum and classical phenomena. In condensed matter physics, in particular, scattering mechanisms, loss of quantum information, or breakdown of topological protection are deeply rooted in the intricate details of how and where…
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Energy dissipation is a fundamental process governing the dynamics of physical, chemical, and biological systems. It is also one of the main characteristics distinguishing quantum and classical phenomena. In condensed matter physics, in particular, scattering mechanisms, loss of quantum information, or breakdown of topological protection are deeply rooted in the intricate details of how and where the dissipation occurs. Despite its vital importance the microscopic behavior of a system is usually not formulated in terms of dissipation because the latter is not a readily measureable quantity on the microscale. Although nanoscale thermometry is gaining much recent interest, the existing thermal imaging methods lack the necessary sensitivity and are unsuitable for low temperature operation required for study of quantum systems. Here we report a superconducting quantum interference nano-thermometer device with sub 50 nm diameter that resides at the apex of a sharp pipette and provides scanning cryogenic thermal sensing with four orders of magnitude improved thermal sensitivity of below 1 μK/Hz1/2. The non-contact non-invasive thermometry allows thermal imaging of very low nanoscale energy dissipation down to the fundamental Landauer limit of 40 fW for continuous readout of a single qubit at 1 GHz at 4.2 K. These advances enable observation of dissipation due to single electron charging of individual quantum dots in carbon nanotubes and reveal a novel dissipation mechanism due to resonant localized states in hBN encapsulated graphene, opening the door to direct imaging of nanoscale dissipation processes in quantum matter.
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Submitted 6 September, 2016;
originally announced September 2016.
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Electrically tunable multi-terminal SQUID-on-tip
Authors:
Aviram Uri,
Alexander Y. Meltzer,
Yonathan Anahory,
Lior Embon,
Ella O. Lachman,
Dorri Halbertal,
Naren HR,
Yuri Myasoedov,
Martin E. Huber,
Andrea Young,
Eli Zeldov
Abstract:
We present a new nanoscale superconducting quantum interference device (SQUID) whose interference pattern can be shifted electrically in-situ. The device consists of a nanoscale four-terminal/four-junction SQUID fabricated at the apex of a sharp pipette using a self-aligned three-step deposition of Pb. In contrast to conventional two-terminal/two-junction SQUIDs that display optimal sensitivity wh…
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We present a new nanoscale superconducting quantum interference device (SQUID) whose interference pattern can be shifted electrically in-situ. The device consists of a nanoscale four-terminal/four-junction SQUID fabricated at the apex of a sharp pipette using a self-aligned three-step deposition of Pb. In contrast to conventional two-terminal/two-junction SQUIDs that display optimal sensitivity when flux biased to about a quarter of the flux quantum, the additional terminals and junctions allow optimal sensitivity at arbitrary applied flux, thus eliminating the magnetic field "blind spots". We demonstrate spin sensitivity of 5 to 8 $μ_B/\text{Hz}^{1/2}$ over a continuous field range of 0 to 0.5 T, with promising applications for nanoscale scanning magnetic imaging.
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Submitted 26 September, 2016; v1 submitted 16 June, 2016;
originally announced June 2016.
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Probing dynamics and pinning of single vortices in superconductors at nanometer scales
Authors:
Lior Embon,
Yonathan Anahory,
Alexander Suhov,
Dorri Halbertal,
Jo Cuppens,
Anton Yakovenko,
Aviram Uri,
Yuri Myasoedov,
Michael L. Rappaport,
Martin E. Huber,
Alexander V. Gurevich,
Eli Zeldov
Abstract:
The dynamics of quantized magnetic vortices and their pinning by materials defects determine electromagnetic properties of superconductors, particularly their ability to carry non-dissipative currents. Despite recent advances in the understanding of the complex physics of vortex matter, the behavior of vortices driven by current through a multi-scale potential of the actual materials defects is st…
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The dynamics of quantized magnetic vortices and their pinning by materials defects determine electromagnetic properties of superconductors, particularly their ability to carry non-dissipative currents. Despite recent advances in the understanding of the complex physics of vortex matter, the behavior of vortices driven by current through a multi-scale potential of the actual materials defects is still not well understood, mostly due to the scarcity of appropriate experimental tools capable of tracing vortex trajectories on nanometer scales. Using a novel scanning superconducting quantum interference microscope we report here an investigation of controlled dynamics of vortices in lead films with sub-Angstrom spatial resolution and unprecedented sensitivity. We measured, for the first time, the fundamental dependence of the elementary pinning force of multiple defects on the vortex displacement, revealing a far more complex behavior than has previously been recognized, including striking spring softening and broken-spring depinning, as well as spontaneous hysteretic switching between cellular vortex trajectories. Our results indicate the importance of thermal fluctuations even at 4.2 K and of the vital role of ripples in the pinning potential, giving new insights into the mechanisms of magnetic relaxation and electromagnetic response of superconductors.
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Submitted 7 November, 2014;
originally announced November 2014.
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A three-junction SQUID-on-tip with tunable in-plane and out-of-plane magnetic field sensitivity
Authors:
Yonathan Anahory,
Jonathan Reiner,
Lior Embon,
Dorri Halbertal,
Anton Yakovenko,
Yuri Myasoedov,
Michael L. Rappaport,
Martin E. Huber,
Eli Zeldov
Abstract:
Nanoscale superconducting quantum interference devices (SQUIDs) demonstrate record sensitivities to small magnetic moments, but are typically sensitive only to the field component that is normal to the plane of the SQUID and out-of-plane with respect to the scanned surface. We report on a nanoscale three-junction Pb SQUID which is fabricated on the apex of a sharp tip. Because of its three-dimensi…
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Nanoscale superconducting quantum interference devices (SQUIDs) demonstrate record sensitivities to small magnetic moments, but are typically sensitive only to the field component that is normal to the plane of the SQUID and out-of-plane with respect to the scanned surface. We report on a nanoscale three-junction Pb SQUID which is fabricated on the apex of a sharp tip. Because of its three-dimensional structure, it exhibits a unique tunable sensitivity to both in-plane and out-of-plane fields. We analyze the two-dimensional interference pattern from both numerical and experimental points of view. This device is integrated into a scanning microscope and its ability to independently measure the different components of the magnetic field with outstanding spin sensitivity better than $5\ \frac{μ_B}{\mathrm{Hz}^{1/2}}$ is demonstrated. This highlights its potential as a local probe of nanoscale magnetic structures.
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Submitted 7 October, 2014;
originally announced October 2014.
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Numeric spectral radiation hydrodynamic calculations of supernova shock breakouts
Authors:
Nir Sapir,
Dorri Halbertal
Abstract:
We present here an efficient numerical scheme for solving the non-relativistic 1D radiation-hydrodynamics equations including inelastic Compton scattering, which is not included in most codes and is crucial for solving problems such as shock breakout. The devised code is applied to the problems of a steady-state planar radiation mediated shock (RMS) and RMS breakout from a stellar envelope. The re…
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We present here an efficient numerical scheme for solving the non-relativistic 1D radiation-hydrodynamics equations including inelastic Compton scattering, which is not included in most codes and is crucial for solving problems such as shock breakout. The devised code is applied to the problems of a steady-state planar radiation mediated shock (RMS) and RMS breakout from a stellar envelope. The results are in agreement with those of a previous work on shock breakout \citep{Sapir13}, in which Compton equilibrium between matter and radiation was assumed and the "effective photon" approximation was used to describe the radiation spectrum. In particular, we show that the luminosity and its temporal dependence, the peak temperature at breakout, and the universal shape of the spectral fluence derived in this earlier work are all accurate. Although there is a discrepancy between the spectral calculations and the effective photon approximation due to the inaccuracy of the effective photon approximation estimate of the effective photon production rate, which grows with lower densities and higher velocities, the difference in peak temperature reaches only $30\%$ for the most discrepant cases of fast shocks in blue supergiants. The incompatibility of the stellar envelope shock breakout model results with observed properties of X-ray flashes and the discrepancy between the predicted and observed rates of X-ray flashes \citep{Sapir13} remain unexplained.
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Submitted 10 August, 2014;
originally announced August 2014.
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Scanning nano-SQUID with single electron spin sensitivity
Authors:
Denis Vasyukov,
Yonathan Anahory,
Lior Embon,
Dorri Halbertal,
Jo Cuppens,
Lior Ne'eman,
Amit Finkler,
Yehonathan Segev,
Yuri Myasoedov,
Michael L. Rappaport,
Martin E. Huber,
Eli Zeldov
Abstract:
One of the critical milestones in the intensive pursuit of quantitative nanoscale magnetic imaging tools is achieving the level of sensitivity required for detecting the field generated by the spin magnetic moment μB of a single electron. Superconducting quantum interference devices (SQUIDs), which were traditionally the most sensitive magnetometers, could not hitherto reach this goal because of t…
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One of the critical milestones in the intensive pursuit of quantitative nanoscale magnetic imaging tools is achieving the level of sensitivity required for detecting the field generated by the spin magnetic moment μB of a single electron. Superconducting quantum interference devices (SQUIDs), which were traditionally the most sensitive magnetometers, could not hitherto reach this goal because of their relatively large effective size (of the order of 1 μm). Here we report self-aligned fabrication of nano-SQUIDs with diameters as small as 46 nm and with an extremely low flux noise of 50 nΦ0/Hz^1/2, representing almost two orders of magnitude improvement in spin sensitivity, down to 0.38 μB/Hz^1/2. In addition, the devices operate over a wide range of magnetic fields with 0.6 μB/Hz^1/2 sensitivity even at 1 T. We demonstrate magnetic imaging of vortices in type II superconductor that are 120 nm apart and scanning measurements of AC magnetic fields down to 50 nT. The unique geometry of these nano-SQUIDs that reside on the apex of a sharp tip allows approaching the sample to within a few nm, which paves the way to a new class of single-spin resolved scanning probe microscopy.
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Submitted 3 August, 2013;
originally announced August 2013.
