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Temperature Dependence of Relativistic Valence Band Splitting Induced by an Altermagnetic Phase Transition
Authors:
M. Hajlaoui,
S. W. D'Souza,
L. Šmejkal,
D. Kriegner,
G. Krizman,
T. Zakusylo,
N. Olszowska,
O. Caha,
J. Michalička,
A. Marmodoro,
K. Výborný,
A. Ernst,
M. Cinchetti,
J. Minar,
T. Jungwirth,
G. Springholz
Abstract:
Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of spin-splitting have been documented within the framework of the non-relativistic spin group symmetry, there has been limited exploration of the inclusion of relativistic symmetry and its impact on the emergence of a nov…
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Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of spin-splitting have been documented within the framework of the non-relativistic spin group symmetry, there has been limited exploration of the inclusion of relativistic symmetry and its impact on the emergence of a novel spin-splitting in the band structure. This study delves into the intricate relativistic electronic structure of an AM material, alpha-MnTe. Employing temperature-dependent angle-resolved photoelectron spectroscopy across the AM phase transition, we elucidate the emergence of a relativistic valence band splitting concurrent with the establishment of magnetic order. This discovery is validated through disordered local moment calculations, modeling the influence of magnetic order on the electronic structure and confirming the magnetic origin of the observed splitting. The temperature-dependent splitting is ascribed to the advent of relativistic spin-splitting resulting from the strengthening of AM order in alpha-MnTe as the temperature decreases. This sheds light on a previously unexplored facet of this intriguing material.
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Submitted 14 June, 2024; v1 submitted 17 January, 2024;
originally announced January 2024.
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Valley-Polarized quantum Hall phase in a strain-controlled Dirac system
Authors:
G. Krizman,
J. Bermejo-Ortiz,
T. Zakusylo,
M. Hajlaoui,
T. Takashiro,
M. Rosmus,
N. Olszowska,
J. J. Kolodziej,
G. Bauer,
Y. Guldner,
G. Springholz,
L. -A. de Vaulchier
Abstract:
In multivalley systems, the valley pseudospin offers rich physics going from encoding of information by its polarization (valleytronics), to exploring novel phases of matter when its degeneracy is changed. Here, by strain engineering, we reveal fully valley-polarized quantum Hall (QH) phases in the Pb1-xSnxSe Dirac system. Remarkably, when the valley energy splitting exceeds the fundamental band g…
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In multivalley systems, the valley pseudospin offers rich physics going from encoding of information by its polarization (valleytronics), to exploring novel phases of matter when its degeneracy is changed. Here, by strain engineering, we reveal fully valley-polarized quantum Hall (QH) phases in the Pb1-xSnxSe Dirac system. Remarkably, when the valley energy splitting exceeds the fundamental band gap, we observe a bipolar QH phase, heralded by the coexistence of hole and electron chiral edge states at distinct valleys in the same quantum well. This suggests that spatially overlaid counter-propagating chiral edge states emerging at different valleys do not interfere with each other.
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Submitted 4 January, 2024;
originally announced January 2024.
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A Novel Ferroelectric Rashba Semiconductor
Authors:
Gauthier Krizman,
Tetiana Zakusylo,
Lakshmi Sajeev,
Mahdi Hajlaoui,
Takuya Takashiro,
Marcin Rosmus,
Natalia Olszowska,
Jacek J. Kolodziej,
Guenther Bauer,
Ondrej Caha,
Gunther Springholz
Abstract:
Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the…
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Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. Yet, only very few materials have been established to belong to this class of multifunctional materials. Here, Pb1-xGexTe is unraveled as a novel FERSC system down to nanoscale. The ferroelectric phase transition and concomitant lattice distortion is demonstrated by temperature dependent X-ray diffraction, and its effect on electronic properties are measured by angle-resolved photoemission spectroscopy. In few nanometer-thick epitaxial heterostructures, a large Rashba spin-splitting is exhibiting a wide tuning range as a function of temperature and Ge content. Our work defines Pb1- xGexTe as a high-potential FERSC system for spintronic applications.
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Submitted 19 October, 2023;
originally announced October 2023.
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Persistence of structural distortion and bulk band Rashba splitting in SnTe above its ferroelectric critical temperature
Authors:
Frédéric Chassot,
Aki Pulkkinen,
Geoffroy Kremer,
Tetiana Zakusylo,
Gauthier Krizman,
Mahdi Hajlaoui,
J. Hugo Dil,
Juraj Krempaský,
Ján Minár,
Gunther Springholz,
Claude Monney
Abstract:
The ferroelectric semiconductor $α$-SnTe has been regarded as a topological crystalline insulator and the dispersion of its surface states has been intensively measured with angle-resolved photoemission spectroscopy (ARPES) over the last decade. However, much less attention has been given to the impact of the ferroelectric transition on its electronic structure, and in particular on its bulk state…
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The ferroelectric semiconductor $α$-SnTe has been regarded as a topological crystalline insulator and the dispersion of its surface states has been intensively measured with angle-resolved photoemission spectroscopy (ARPES) over the last decade. However, much less attention has been given to the impact of the ferroelectric transition on its electronic structure, and in particular on its bulk states. Here, we investigate the low-energy electronic structure of $α$-SnTe with ARPES and follow the evolution of the bulk-state Rashba splitting as a function of temperature, across its ferroelectric critical temperature of about $T_c\sim 110$ K. Unexpectedly, we observe a persistent band splitting up to room temperature, which is consistent with an order-disorder contribution to the phase transition that requires the presence of fluctuating local dipoles above $T_c$. We conclude that no topological surface state can occur at the (111) surface of SnTe, at odds with recent literature.
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Submitted 31 August, 2023;
originally announced August 2023.
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Altermagnetic lifting of Kramers spin degeneracy
Authors:
J. Krempaský,
L. Šmejkal,
S. W. D'Souza,
M. Hajlaoui,
G. Springholz,
K. Uhlířová,
F. Alarab,
P. C. Constantinou,
V. Strokov,
D. Usanov,
W. R. Pudelko,
R. González-Hernández,
A. Birk Hellenes,
Z. Jansa,
H. Reichlová,
Z. Šobáň,
R. D. Gonzalez Betancourt,
P. Wadley,
J. Sinova,
D. Kriegner,
J. Minár,
J. H. Dil,
T. Jungwirth
Abstract:
Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal…
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Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal symmetry-breaking mechanisms. The first one refers to time-reversal symmetry breaking by magnetization of ferromagnets, and tends to be strong due to the non-relativistic exchange-coupling origin. The second mechanism applies to crystals with broken inversion symmetry, and tends to be comparatively weaker as it originates from the relativistic spin-orbit coupling. A recent theory work based on spin-symmetry classification has identified an unconventional magnetic phase, dubbed altermagnetic, that allows for lifting the Kramers spin degeneracy without net magnetization and inversion-symmetry breaking. Here we provide the confirmation using photoemission spectroscopy and ab initio calculations. We identify two distinct unconventional mechanisms of lifted Kramers spin degeneracy generated by the altermagnetic phase of centrosymmetric MnTe with vanishing net magnetization. Our observation of the altermagnetic lifting of the Kramers spin degeneracy can have broad consequences in magnetism. It motivates exploration and exploitation of the unconventional nature of this magnetic phase in an extended family of materials, ranging from insulators and semiconductors to metals and superconductors, that have been either identified recently or perceived for many decades as conventional antiferromagnets.
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Submitted 21 August, 2023;
originally announced August 2023.
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Observation of Weyl and Dirac fermions at smooth topological Volkov-Pankratov heterojunctions
Authors:
J. Bermejo-Ortiz,
G. Krizman,
R. Jakiela,
Z. Khosravizadeh,
M. Hajlaoui,
G. Bauer,
G. Springholz,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Weyl and Dirac relativistic fermions are ubiquitous in topological matter. Their relativistic character enables high energy physics phenomena like the chiral anomaly to occur in solid state, which allows to experimentally probe and explore fundamental relativistic theories. Here we show that on smooth interfaces between a trivial and a topological material, massless Weyl and massive Dirac fermions…
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Weyl and Dirac relativistic fermions are ubiquitous in topological matter. Their relativistic character enables high energy physics phenomena like the chiral anomaly to occur in solid state, which allows to experimentally probe and explore fundamental relativistic theories. Here we show that on smooth interfaces between a trivial and a topological material, massless Weyl and massive Dirac fermions intrinsically coexist. The emergence of the latter, known as Volkov-Pankratov states, is directly revealed by magneto-optical spectroscopy, evidencing that their energy spectrum is perfectly controlled by the smoothness of topological interface. Simultaneously, we reveal the optical absorption of the zero-energy chiral Weyl state, whose wavefunction is drastically transformed when the topological interface is smooth. Artificial engineering of the topology profile thus provides a novel textbook system to explore the rich relativistic energy spectra in condensed matter heterostructures.
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Submitted 19 July, 2022;
originally announced July 2022.
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Extremely low energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/GaAlAs heterostructures
Authors:
Mahdi Hajlaoui,
Stefano Ponzoni,
Michael Deppe,
Tobias Henksmeier,
Donat Josef As,
Dirk Reuter,
Thomas Zentgraf,
Claus Michael Schneider,
Mirko Cinchetti
Abstract:
Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their electronic structure. So far, the most commonly used experimental techniques for this purpose have been all-optical spectroscopy methods that, however, ar…
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Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their electronic structure. So far, the most commonly used experimental techniques for this purpose have been all-optical spectroscopy methods that, however, are generally averaged in momentum space. Additional information can be gained by angle-resolved photoelectron spectroscopy (ARPES), which measures the electronic structure with momentum resolution. Here we report on the use of extremely low energy ARPES (photon energy $\sim$ 7 eV) to increase its depth sensitivity and access buried QW states, located at 3 nm and 6 nm below the surface of cubic-GaN/AlN and GaAs/AlGaAs heterostructures, respectively. We find that the QW states in cubic-GaN/AlN can indeed be observed, but not their energy dispersion because of the high surface roughness. The GaAs/AlGaAs QW states, on the other hand, are buried too deep to be detected by extremely low energy ARPES. Since the sample surface is much flatter, the ARPES spectra of the GaAs/AlGaAs show distinct features in momentum space, which can be reconducted to the band structure of the topmost surface layer of the QW structure. Our results provide important information about the samples' properties required to perform extremely low energy ARPES experiments on electronic states buried in semiconductor heterostructures.
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Submitted 11 May, 2021;
originally announced May 2021.
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Surface effects on the Mott-Hubbard transition in archetypal V$_2$O$_3$
Authors:
G. Lantz,
M. Hajlaoui,
E. Papalazarou,
V. L. R. Jacques,
A. Mazzotti,
M. Marsi,
S. Lupi,
M. Amati,
L. Gregoratti,
L. Si,
Z. Zhong,
K. Held
Abstract:
We present an experimental and theoretical study exploring surface effects on the evolution of the metal-insulator transition in the model Mott-Hubbard compound Cr-doped V$_2$O$_3$. We find a microscopic domain formation that is clearly affected by the surface crystallographic orientation. Using scanning photoelectron microscopy and X-ray diffraction, we find that surface defects act as nucleation…
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We present an experimental and theoretical study exploring surface effects on the evolution of the metal-insulator transition in the model Mott-Hubbard compound Cr-doped V$_2$O$_3$. We find a microscopic domain formation that is clearly affected by the surface crystallographic orientation. Using scanning photoelectron microscopy and X-ray diffraction, we find that surface defects act as nucleation centers for the formation of domains at the temperature-induced isostructural transition and favor the formation of microscopic metallic regions. A density functional theory plus dynamical mean field theory study of different surface terminations shows that the surface reconstruction with excess vanadyl cations leads to doped, and hence more metallic surface states, explaining our experimental observations.
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Submitted 8 July, 2015;
originally announced July 2015.
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Tuning a Schottky barrier in a photoexcited topological insulator with transient Dirac cone electron-hole asymmetry
Authors:
M. Hajlaoui,
E. Papalazarou,
J. Mauchain,
L. Perfetti,
A. Taleb-Ibrahimi,
F. Navarin,
M. Monteverde,
P. Auban-Senzier,
C. R. Pasquier,
N. Moisan,
D. Boschetto,
M. Neupane,
M. Z. Hasan,
T. Durakiewicz,
Z. Jiang,
Y. Xu,
I. Miotkowski,
Y. P. Chen,
S. Jia,
H. W. Ji,
R. J. Cava,
M. Marsi
Abstract:
The advent of Dirac materials has made it possible to realize two dimensional gases of relativistic fermions with unprecedented transport properties in condensed matter. Their photoconductive control with ultrafast light pulses is opening new perspectives for the transmission of current and information. Here we show that the interplay of surface and bulk transient carrier dynamics in a photoexcite…
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The advent of Dirac materials has made it possible to realize two dimensional gases of relativistic fermions with unprecedented transport properties in condensed matter. Their photoconductive control with ultrafast light pulses is opening new perspectives for the transmission of current and information. Here we show that the interplay of surface and bulk transient carrier dynamics in a photoexcited topological insulator can control an essential parameter for photoconductivity - the balance between excess electrons and holes in the Dirac cone. This can result in a strongly out of equilibrium gas of hot relativistic fermions, characterized by a surprisingly long lifetime of more than 50 ps, and a simultaneous transient shift of chemical potential by as much as 100 meV. The unique properties of this transient Dirac cone make it possible to tune with ultrafast light pulses a relativistic nanoscale Schottky barrier, in a way that is impossible with conventional optoelectronic materials.
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Submitted 24 November, 2013;
originally announced November 2013.
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Ultrafast surface carrier dynamics in the topological insulator Bi2Te3
Authors:
M. Hajlaoui,
E. Papalazarou,
J. Mauchain,
G. Lantz,
N. Moisan,
D. Boschetto,
Z. Jiang,
I. Miotkowski,
Y. P. Chen,
A. Taleb-Ibrahimi,
L. Perfetti,
M. Marsi
Abstract:
We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi$_2$Te$_3$ following a femtosecond laser excitation. Using time and angle resolved photoelectron spectroscopy, we provide a direct real-time visualisation of the transient carrier population of both the surface states and the bulk conduction band. We find that the thermalization of the surface sta…
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We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi$_2$Te$_3$ following a femtosecond laser excitation. Using time and angle resolved photoelectron spectroscopy, we provide a direct real-time visualisation of the transient carrier population of both the surface states and the bulk conduction band. We find that the thermalization of the surface states is initially determined by interband scattering from the bulk conduction band, lasting for about 0.5 ps; subsequently, few ps are necessary for the Dirac cone non-equilibrium electrons to recover a Fermi-Dirac distribution, while their relaxation extends over more than 10 ps. The surface sensitivity of our measurements makes it possible to estimate the range of the bulk-surface interband scattering channel, indicating that the process is effective over a distance of 5 nm or less. This establishes a correlation between the nanoscale thickness of the bulk charge reservoir and the evolution of the ultrafast carrier dynamics in the surface Dirac cone.
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Submitted 20 June, 2012;
originally announced June 2012.
