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Fluctuation-mediated spin-orbit torque enhancement in the noncollinear antiferromagnet Mn3Ni0.35Cu0.65N
Authors:
Arnab Bose,
Tom G. Saunderson,
Aga Shahee,
Lichuan Zhang,
Tetsuya Hajiri,
Adithya Rajan,
Dongwook Go,
Hidefumi Asano,
Udo Schwingenschlögl,
Aurelien Manchon,
Yuriy Mokrousov,
Mathias Kläui
Abstract:
The role of spin fluctuations near magnetic phase transitions is crucial for generating various exotic phenomena, including anomalies in the extraordinary Hall effect, excess spin-current generation through the spin-Hall effect (SHE), and enhanced spin-pum**, amongst others. In this study, we experimentally investigate the temperature dependence of spin-orbit torques (SOTs) generated by Mn3Ni0.3…
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The role of spin fluctuations near magnetic phase transitions is crucial for generating various exotic phenomena, including anomalies in the extraordinary Hall effect, excess spin-current generation through the spin-Hall effect (SHE), and enhanced spin-pum**, amongst others. In this study, we experimentally investigate the temperature dependence of spin-orbit torques (SOTs) generated by Mn3Ni0.35Cu0.65N (MNCN), a member of the noncollinear antiferromagnetic family that exhibits unconventional magnetotransport properties. Our work uncovers a strong and nontrivial temperature dependence of SOTs, peaking near the Néel temperature of MNCN, which cannot be explained by conventional intrinsic and extrinsic scattering mechanisms of the SHE. Notably, we measure a maximum SOT efficiency of 30%, which is substantially larger than that of commonly studied nonmagnetic materials such as Pt. Theoretical calculations confirm a negligible SHE and a strong orbital Hall effect that can explain the observed SOTs. We propose a previously unidentified mechanism wherein fluctuating antiferromagnetic moments trigger the generation of substantial orbital currents near the Néel temperature due to the emergence of scalar spin chirality. Our findings present an approach for enhancing SOTs, which holds promise for magnetic memory applications by leveraging antiferromagnetic spin fluctuations to amplify both orbital and spin currents.
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Submitted 29 January, 2024;
originally announced January 2024.
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Revealing the higher-order spin nature of the Hall effect in non-collinear antiferromagnet $\mathrm{Mn_3Ni_{0.35}Cu_{0.65}N}$
Authors:
Adithya Rajan,
Tom G. Saunderson,
Fabian R. Lux,
Rocío Yanes Díaz,
Hasan M. Abdullah,
Arnab Bose,
Beatrice Bednarz,
Jun-Young Kim,
Dongwook Go,
Tetsuya Hajiri,
Gokaran Shukla,
Olena Gomonay,
Yugui Yao,
Wanxiang Feng,
Hidefumi Asano,
Udo Schwingenschlögl,
Luis López-Díaz,
Jairo Sinova,
Yuriy Mokrousov,
Aurélien Manchon,
Mathias Kläui
Abstract:
Ferromagnets generate an anomalous Hall effect even without the presence of a magnetic field, something that conventional antiferromagnets cannot replicate but noncollinear antiferromagnets can. The anomalous Hall effect governed by the resistivity tensor plays a crucial role in determining the presence of time reversal symmetry and the topology present in the system. In this work we reveal the co…
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Ferromagnets generate an anomalous Hall effect even without the presence of a magnetic field, something that conventional antiferromagnets cannot replicate but noncollinear antiferromagnets can. The anomalous Hall effect governed by the resistivity tensor plays a crucial role in determining the presence of time reversal symmetry and the topology present in the system. In this work we reveal the complex origin of the anomalous Hall effect arising in noncollinear antiferromagnets by performing Hall measurements with fields applied in selected directions in space with respect to the crystalline axes. Our coplanar magnetic field geometry goes beyond the conventional perpendicular field geometry used for ferromagnets and allows us to suppress any magnetic dipole contribution. It allows us to map the in-plane anomalous Hall contribution and we demonstrate a 120$^\circ$ symmetry which we find to be governed by the octupole moment at high fields. At low fields we subsequently discover a surprising topological Hall-like signature and, from a combination of theoretical techniques, we show that the spins can be recast into dipole, emergent octupole and noncoplanar effective magnetic moments. These co-existing orders enable magnetization dynamics unachievable in either ferromagnetic or conventional collinear antiferromagnetic materials.
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Submitted 21 April, 2023;
originally announced April 2023.
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Spin-Orbit Torque Switching of Noncollinear Antiferromagnetic Antiperovskite Manganese Nitride Mn$_3$GaN
Authors:
T. Hajiri,
K. Matsuura,
K. Sonoda,
E. Tanaka,
K. Ueda,
H. Asano
Abstract:
Noncollinear antiferromagnets have promising potential to replace ferromagnets in the field of spintronics as high-density devices with ultrafast operation. To take full advantage of noncollinear antiferromagnets in spintronics applications, it is important to achieve efficient manipulation of noncollinear antiferromagnetic spin. Here, using the anomalous Hall effect as an electrical signal of the…
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Noncollinear antiferromagnets have promising potential to replace ferromagnets in the field of spintronics as high-density devices with ultrafast operation. To take full advantage of noncollinear antiferromagnets in spintronics applications, it is important to achieve efficient manipulation of noncollinear antiferromagnetic spin. Here, using the anomalous Hall effect as an electrical signal of the triangular magnetic configuration, spin-orbit torque switching with no external magnetic field is demonstrated in noncollinear antiferromagnetic antiperovskite manganese nitride Mn$_3$GaN at room temperature. The pulse-width dependence and subsequent relaxation of Hall signal behavior indicate that the spin-orbit torque plays a more important role than the thermal contribution due to pulse injection. In addition, multistate memristive switching with respect to pulse current density was observed. The findings advance the effective control of noncollinear antiferromagnetic spin, facilitating the use of such materials in antiferromagnetic spintronics and neuromorphic computing applications.
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Submitted 21 July, 2021;
originally announced July 2021.
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Scaling the electrical current switching of exchange bias in fully-epitaxial antiferromagnet/ferromagnet bilayers
Authors:
T. Hajiri,
H. Goto,
H. Asano
Abstract:
While the electrical current manipulation of antiferromagnets (AFMs) has been demonstrated, the extent of the studied AFM materials has been limited with few systematic experiments and a poor understanding. We compare the electrical current switching of the exchange-bias field ($H_{ex}$) in AFM-Mn$_3A$N/ferromagnet-Co$_3$FeN bilayers. An applied pulse current can manipulate $H_{ex}$ with respect t…
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While the electrical current manipulation of antiferromagnets (AFMs) has been demonstrated, the extent of the studied AFM materials has been limited with few systematic experiments and a poor understanding. We compare the electrical current switching of the exchange-bias field ($H_{ex}$) in AFM-Mn$_3A$N/ferromagnet-Co$_3$FeN bilayers. An applied pulse current can manipulate $H_{ex}$ with respect to the current density and FM layer magnetization, which shifts exponentially as a function of the current density. We found that the saturation current density and exponential decay constant $τ$ increase with the local moment of AFM Mn atoms. Our results highlight the effect of the AFM local moment to electrical current switching of $H_{ex}$, although it has a near-zero net magnetization, and may provide a facile way to explore the electrical current manipulation of AFM materials.
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Submitted 16 June, 2020;
originally announced July 2020.
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Epitaxial growth and orientation-dependent anomalous Hall effect of noncollinear antiferromagnetic Mn$_3$Ni$_{0.35}$Cu$_{0.65}$N films
Authors:
R. Miki,
K. Zhao,
T. Hajiri,
P. Gegenwart,
H. Asano
Abstract:
We report the growth of noncollinear antiferromagnetic (AFM) Mn$_3$Ni$_{0.35}$Cu$_{0.65}$N films and the orientation-dependent anomalous Hall effect (AHE) of (001) and (111) films due to nonzero Berry curvature. We found that post-annealing at 500$^\circ$C can significantly improve the AHE signals, though using the appropriate post-annealing conditions is important. The AHE and magnetization loops…
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We report the growth of noncollinear antiferromagnetic (AFM) Mn$_3$Ni$_{0.35}$Cu$_{0.65}$N films and the orientation-dependent anomalous Hall effect (AHE) of (001) and (111) films due to nonzero Berry curvature. We found that post-annealing at 500$^\circ$C can significantly improve the AHE signals, though using the appropriate post-annealing conditions is important. The AHE and magnetization loops show sharp flip** at the coercive field in (111) films, while (001) films are hard to saturate by a magnetic field. The anomalous Hall conductivity of (111) films is an order of magnitude larger than that of (001) films. The present results provide not only a better understanding of the AHE in Mn$_3X$N systems but also further opportunities to study the unique phenomena related to noncollinear AFM.
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Submitted 5 March, 2020;
originally announced March 2020.
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Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$
Authors:
T Hajiri,
L. Baldrati,
R. Lebrun,
M. Filianina,
A. Ross,
N. Tanahashi,
M. Kuroda,
W. L. Gan,
T. O. Menteş,
F. Genuzio,
A. Locatelli,
H Asano,
M. Kläui
Abstract:
We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO$_3$(110) align in the plane of the film. Angularly dependent magne…
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We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO$_3$(110) align in the plane of the film. Angularly dependent magnetoresistance measurements show that SmFeO$_3$/Ta bilayers exhibit a positive SMR, in contrast to the negative SMR expected in previously studied collinear AFMs. The SMR amplitude increases linearly with increasing external magnetic field at higher magnetic field, suggesting that field-induced canting of the AFM spins plays an important role. In contrast, around the coercive field, no detectable SMR signal is observed, indicating that SMR of AFM and canting magnetization components cancel out. Below 50~K, the SMR amplitude increases sizably by a factor of two as compared to room temperature, which likely correlates with the long-range ordering of the Sm ions. Our results show that the SMR is a sensitive technique for non-equilibrium spin system of non-collinear AFM systems.
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Submitted 11 July, 2019;
originally announced July 2019.
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Electrical current switching of the noncollinear antiferromagnet Mn$_3$GaN
Authors:
T. Hajiri,
S. Ishino,
K. Matsuura,
H. Asano
Abstract:
We report electrical current switching of noncollinear antiferromagnetic (AFM) Mn$_3$GaN/Pt bilayers at room temperature. The Hall resistance of these bilayers can be manipulated by applying a pulse current of $1.5\times10^6$~A/cm$^2$, whereas no significant change is observed up to $\sim10^8$~A/cm$^2$ in Mn$_3$GaN single films, indicating that the Pt layer plays an important role. In comparison w…
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We report electrical current switching of noncollinear antiferromagnetic (AFM) Mn$_3$GaN/Pt bilayers at room temperature. The Hall resistance of these bilayers can be manipulated by applying a pulse current of $1.5\times10^6$~A/cm$^2$, whereas no significant change is observed up to $\sim10^8$~A/cm$^2$ in Mn$_3$GaN single films, indicating that the Pt layer plays an important role. In comparison with ferrimagnetic Mn$_3$GaN/Pt bilayers, a lower electrical current switching of noncollinear AFM Mn$_3$GaN is demonstrated, with a critical current density two orders of magnitude smaller. Our results highlight that a combination of a noncollinear AFM antiperovskite nitride and a spin-torque technique is a good platform of AFM spintronics.
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Submitted 11 July, 2019;
originally announced July 2019.
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Anomalous Hall effect in non-collinear antiferromagnetic antiperovskite Mn$_{3}$Ni$_{1-x}$Cu$_{x}$N
Authors:
K. Zhao,
T. Hajiri,
H. Chen,
R. Miki,
H. Asano,
P. Gegenwart
Abstract:
We report the anomalous Hall effect (AHE) in antiperovskite Mn$_{3}$NiN with substantial do** of Cu on the Ni site (i.e. Mn$_{3}$Ni$_{1-x}$Cu$_{x}$N), which stabilizes a noncollinear antiferromagnetic (AFM) order compatible with the AHE. Observed on both sintered polycrystalline pieces and single crystalline films, the AHE does not scale with the net magnetization, contrary to the conventional f…
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We report the anomalous Hall effect (AHE) in antiperovskite Mn$_{3}$NiN with substantial do** of Cu on the Ni site (i.e. Mn$_{3}$Ni$_{1-x}$Cu$_{x}$N), which stabilizes a noncollinear antiferromagnetic (AFM) order compatible with the AHE. Observed on both sintered polycrystalline pieces and single crystalline films, the AHE does not scale with the net magnetization, contrary to the conventional ferromagnetic case. The existence of the AHE is explained through symmetry analysis based on the $Γ_{\rm 4g}$ AFM order in Cu doped Mn$_{3}$NiN. DFT calculations of the intrinsic contribution to the AHE reveal the non-vanishing Berry curvature in momentum space due to the noncollinear magnetic order. Combined with other attractive properties, antiperovskite Mn$_{3}$AN system offers great potential in AFM spintronics.
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Submitted 11 April, 2019;
originally announced April 2019.
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Change of Fermi surface states related with two different $T_{\rm c}$-raising mechanisms in iron pnictide superconductor
Authors:
A. Takemori,
T. Hajiri,
S. Miyasaka,
Z. H. Tin,
T. Adachi,
S. Ideta,
K. Tanaka,
M. Matsunami,
S. Tajima
Abstract:
Evolution of Fermi surface (FS) states of NdFeAs$_{1-x}$P$_x$O$_{0.9}$F$_{0.1}$ single crystals with As/P substitution has been investigated. The critical temperature $T_{\rm c}$ and the power law exponent ($n$) of temperature-dependent resistivity ($ρ(T) = ρ_0 + AT^n$) show a clear correlation above $x=$0.2, suggesting that $T_{\rm c}$ is enhanced with increasing bosonic fluctuation in the same t…
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Evolution of Fermi surface (FS) states of NdFeAs$_{1-x}$P$_x$O$_{0.9}$F$_{0.1}$ single crystals with As/P substitution has been investigated. The critical temperature $T_{\rm c}$ and the power law exponent ($n$) of temperature-dependent resistivity ($ρ(T) = ρ_0 + AT^n$) show a clear correlation above $x=$0.2, suggesting that $T_{\rm c}$ is enhanced with increasing bosonic fluctuation in the same type of FS state. Around $x=$0.2, all the transport properties show anomalies, indicating that $x$$\sim$0.2 is the critical composition of drastic FS change. The angle resolved photoemission spectroscopy has more directly revealed the distinct change of FS around $x=$0.2, that one hole FS disappears at Brillouin zone center and the other FS with propeller like shape appears at zone corner with decreasing $x$. These results are indicative of the existence of two types of FS state with different nesting conditions that are related with two $T_{\rm c}$-rising mechanisms in this system.
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Submitted 10 September, 2018; v1 submitted 30 August, 2018;
originally announced August 2018.
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Electromagnetic effects induced by time-dependent axion field
Authors:
Katsuhisa Taguchi,
Tatsushi Imaeda,
Tetsuya Hajiri,
Takuya Shiraishi,
Yukio Tanaka,
Naoya Kitajima,
Tatsuhiro Naka
Abstract:
We studied the dynamics of the so-called $θ$-term, which exists in topological materials and is related to a hypothetical field predicted by Peccei-Quinn in particle physics, in a magnetic superlattice constructed using a topological insulator and two ferromagnetic insulators, where the ferromagnetic insulators had perpendicular magnetic anisotropies and different magnetic coercive fields. We exam…
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We studied the dynamics of the so-called $θ$-term, which exists in topological materials and is related to a hypothetical field predicted by Peccei-Quinn in particle physics, in a magnetic superlattice constructed using a topological insulator and two ferromagnetic insulators, where the ferromagnetic insulators had perpendicular magnetic anisotropies and different magnetic coercive fields. We examined a way to drive the dynamics of the $θ$-term in the magnetic superlattice through changing the inversion symmetry (from an anti-parallel to a parallel magnetic configuration) using an external magnetic field. As a result, we found that unconventional electromagnetic fields, which are magnetic field-induced charge currents and vice versa, are generated by the nonzero dynamics of the $θ$-term.
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Submitted 5 June, 2018;
originally announced June 2018.
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Large-gap magnetic topological heterostructure formed by subsurface incorporation of a ferromagnetic layer
Authors:
Toru Hirahara,
Sergey V. Eremeev,
Tetsuroh Shirasawa,
Yuma Okuyama,
Takayuki Kubo,
Ryosuke Nakanishi,
Ryota Akiyama,
Akari Takayama,
Tetsuya Hajiri,
Shin-ichiro Ideta,
Masaharu Matsunami,
Kazuki Sumida,
Koji Miyamoto,
Yasumasa Takagi,
Kiyohisa Tanaka,
Taichi Okuda,
Toshihiko Yokoyama,
Shin-ichi Kimura,
Shuji Hasegawa,
Evgueni V. Chulkov
Abstract:
Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on do** magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the…
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Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on do** magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the gap opening is due to the time-reversal symmetry breaking or not. Furthermore, the realization of the QAHE has been limited to low temperatures. Here we have succeeded in generating a massive Dirac cone in a MnBi2Se4 /Bi2Se3 heterostructure which was fabricated by self-assembling a MnBi2Se4 layer on top of the Bi2Se3 surface as a result of the co-deposition of Mn and Se. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the fabricated MnBi2Se4 /Bi2Se3 heterostructure shows ferromagnetism up to room temperature and a clear Dirac-cone gap opening of ~100 meV without any other significant changes in the rest of the band structure. It can be considered as a result of the direct interaction of the surface Dirac cone and the magnetic layer rather than a magnetic proximity effect. This spontaneously formed self-assembled heterostructure with a massive Dirac spectrum, characterized by a nontrivial Chern number C = -1, has a potential to realize the QAHE at significantly higher temperatures than reported up to now and can serve as a platform for develo** future " topotronics" devices.
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Submitted 6 September, 2017;
originally announced September 2017.
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Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers
Authors:
T. Hajiri,
M. Matsushita,
Y. Z. Ni,
H. Asano
Abstract:
We report the magnetotransport properties of ferromagnet (FM)/antiferromagnet (AFM) Fe$_2$CrSi/Ru$_2$MnGe epitaxial bilayers using current-in-plane configurations. Above the critical thickness of the Ru$_2$MnGe layer to induce exchange bias, symmetric and asymmetric curves were observed in response to the direction of FM magnetocrystalline anisotropy. Because each magnetoresistance curve showed fu…
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We report the magnetotransport properties of ferromagnet (FM)/antiferromagnet (AFM) Fe$_2$CrSi/Ru$_2$MnGe epitaxial bilayers using current-in-plane configurations. Above the critical thickness of the Ru$_2$MnGe layer to induce exchange bias, symmetric and asymmetric curves were observed in response to the direction of FM magnetocrystalline anisotropy. Because each magnetoresistance curve showed full and partial AFM rotation, the magnetoresistance curves imply the impact of the Fe$_2$CrSi magnetocrystalline anisotropy to govern the AFM rotation. The maximum magnitude of the angular-dependent resistance-change ratio of the bilayers is more than an order of magnitude larger than that of single-layer Fe$_2$CrSi films, resulting from the reorientation of AFM spins via the FM rotation. These results highlight the essential role of controlling the AFM rotation and reveal a facile approach to detect the AFM moment even in current-in-plane configurations in FM/AFM bilayers.
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Submitted 22 March, 2017; v1 submitted 4 March, 2017;
originally announced March 2017.
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Anomalous Superconducting-Gap Structure of Slightly Overdoped Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$
Authors:
T. Hajiri,
T. Ito,
M. Matsunami,
B. H. Min,
Y. S. Kwon,
S. Kimura
Abstract:
We observed the anisotropic superconducting-gap (SC-gap) structure of a slightly overdoped superconductor, Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ ($x=0.1$), using three-dimensional (3D) angle-resolved photoemission spectroscopy. Two hole Fermi surfaces (FSs) observed at the Brillouin zone center and an inner electron FS at the zone corner showed a nearly isotropic SC gap in 3D momentum space. Howeve…
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We observed the anisotropic superconducting-gap (SC-gap) structure of a slightly overdoped superconductor, Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ ($x=0.1$), using three-dimensional (3D) angle-resolved photoemission spectroscopy. Two hole Fermi surfaces (FSs) observed at the Brillouin zone center and an inner electron FS at the zone corner showed a nearly isotropic SC gap in 3D momentum space. However, the outer electron FS showed an anisotropic SC gap with nodes or gap minima around the M and A points. The different anisotropies obtained the SC gap between the outer and inner electron FSs cannot be expected from all theoretical predictions with spin fluctuation, orbital fluctuation, and both competition. Our results provide a new insight into the SC mechanisms of iron pnictide superconductors.
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Submitted 19 August, 2014;
originally announced August 2014.
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Polarization-Dependent Three-Dimensional Angle-Resolved Photoemission Spectroscopy of BaFe$_{1.8}$Co$_{0.2}$As$_{2}$
Authors:
Tetsuya Hajiri,
Takahiro Ito,
Masaharu Matsunami,
Byeong Hun Min,
Yong Seung Kwon,
Shin-ichi Kimura
Abstract:
We performed polarization- and photon-energy-dependent angle-resolved photoemission spectroscopy of a slightly overdoped iron pnictide superconductor, BaFe$_{1.8}$Co$_{0.2}$As$_{2}$, to clarify the three-dimensional electronic structure including its orbital characters at the Brillouin zone center. Two hole Fermi surfaces (FSs) with $d_{xz/yz}$ and $d_{xy/x^2-y^2}$ orbitals were observed but…
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We performed polarization- and photon-energy-dependent angle-resolved photoemission spectroscopy of a slightly overdoped iron pnictide superconductor, BaFe$_{1.8}$Co$_{0.2}$As$_{2}$, to clarify the three-dimensional electronic structure including its orbital characters at the Brillouin zone center. Two hole Fermi surfaces (FSs) with $d_{xz/yz}$ and $d_{xy/x^2-y^2}$ orbitals were observed but $d_{z^2}$ hole FS, which has nodes according to a theory of the spin-fluctuation superconductivity mechanism, did not appear. These results suggest that no node will appear at hole FSs at the zone center.
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Submitted 20 November, 2013;
originally announced November 2013.
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Strong Correlation Effects of A-site Ordered Perovskite CaCu3Ti4O12 revealed by Angle-Resolved Photoemission Spectroscopy
Authors:
H. J. Im,
M. Tsunekawa,
T. Sakurada,
M. Iwataki,
K. Kawata,
T. Watanabe,
K. Takegahara,
H. Miyazaki,
M. Matsunami,
T. Hajiri,
S. Kimura
Abstract:
We report angle-resolved photoemission spectroscopy (ARPES) results of A-site ordered perovskite CaCu$_3$Ti$_4$O$_{12}$. We have observed the clear band dispersions, which are shifted to the higher energy by 1.7 eV and show the band narrowing around 2 eV in comparison with the local density approximation calculations. In addition, the high energy multiplet structures of Cu 3$d^8$ final-states have…
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We report angle-resolved photoemission spectroscopy (ARPES) results of A-site ordered perovskite CaCu$_3$Ti$_4$O$_{12}$. We have observed the clear band dispersions, which are shifted to the higher energy by 1.7 eV and show the band narrowing around 2 eV in comparison with the local density approximation calculations. In addition, the high energy multiplet structures of Cu 3$d^8$ final-states have been found around 8 - 13 eV. These results reveal that CaCu$_3$Ti$_4$O$_{12}$ is a Mott-type insulator caused by the strong correlation effects of the Cu 3$d$ electrons well hybridized with O 2$p$ states. Unexpectedly, there exist a very small spectral weight at the Fermi level in the insulator phase, indicating the existence of isolated metallic states.
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Submitted 25 June, 2013; v1 submitted 19 March, 2013;
originally announced March 2013.
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Magnetic origin of high-energy kink structure in heavily electron-doped Li$_{1+x}$FeAs
Authors:
T. Hajiri,
T. Ito,
R. Niwa,
S. Hirate,
M. Matsunami,
B. H. Min,
Y. S. Kwon,
S. Kimura
Abstract:
We report the origin of a high-energy kink structure of heavily electron-doped nonsuperconducting Li$_{1+x}$FeAs observed by three-dimensional angle-resolved photoemission spectroscopy. The $d_{xy}$ orbital at the center of the Brillouin zone is strongly renormalized, indicating stronger electron correlation, exceeding that of stoichiometric LiFeAs despite the fact that the orbital characters of a…
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We report the origin of a high-energy kink structure of heavily electron-doped nonsuperconducting Li$_{1+x}$FeAs observed by three-dimensional angle-resolved photoemission spectroscopy. The $d_{xy}$ orbital at the center of the Brillouin zone is strongly renormalized, indicating stronger electron correlation, exceeding that of stoichiometric LiFeAs despite the fact that the orbital characters of all bands remain unchanged. Two types of kink structure on the $d_{yz}$ band were identified: an isotropic kink at the binding energy of 20 meV, and another kink located at 100 meV observed only in the (110) direction. The higher-energy kink is considered to originate from a magnetic interaction, because the peak energy is consistent with that of a spin excitation.
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Submitted 30 January, 2013; v1 submitted 28 December, 2012;
originally announced December 2012.
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Strongly hybridized electronic structure of YbAl2: An angle-resolved photoemission study
Authors:
M. Matsunami,
T. Hajiri,
H. Miyazaki,
M. Kosaka,
S. Kimura
Abstract:
We report the electronic structure of a prototypical valence fluctuation system, YbAl2, using angle-resolved photoemission spectroscopy. The observed band dispersions and Fermi surfaces are well described in terms of band structure calculations based on local density approximation. Strong hybridization between the conduction and 4f bands is identified on the basis of the periodic Anderson model. T…
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We report the electronic structure of a prototypical valence fluctuation system, YbAl2, using angle-resolved photoemission spectroscopy. The observed band dispersions and Fermi surfaces are well described in terms of band structure calculations based on local density approximation. Strong hybridization between the conduction and 4f bands is identified on the basis of the periodic Anderson model. The evaluated small mass enhancement factor and the high Kondo temperature qualitatively agree with those obtained from thermodynamic measurements. Such findings suggest that the strong hybridization suppresses band renormalization and is responsible for the valence fluctuations in YbAl2.
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Submitted 30 April, 2013; v1 submitted 27 October, 2012;
originally announced October 2012.
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Optical study of charge instability in CeRu2Al10 in comparison with CeOs2Al10 and CeFe2Al10
Authors:
Shin-ichi Kimura,
Takuya Iizuka,
Hidetoshi Miyazaki,
Tetsuya Hajiri,
Masaharu Matsunami,
Tatsuya Mori,
Akinori Irizawa,
Yuji Muro,
Junpei Ka**o,
Toshiro Takabatake
Abstract:
The anisotropic electronic structure responsible for the antiferromagnetic transition in CeRu$_2$Al$_{10}$ at the unusually high temperature of $T_0$ = 28 K was studied using optical conductivity spectra, Ce 3d X-ray photoemission spectra, and band calculation. It was found that the electronic structure in the $ac$ plane is that of a Kondo semiconductor, whereas that along the b axis has a nesting…
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The anisotropic electronic structure responsible for the antiferromagnetic transition in CeRu$_2$Al$_{10}$ at the unusually high temperature of $T_0$ = 28 K was studied using optical conductivity spectra, Ce 3d X-ray photoemission spectra, and band calculation. It was found that the electronic structure in the $ac$ plane is that of a Kondo semiconductor, whereas that along the b axis has a nesting below 32 K (slightly higher than $T_0$). These characteristics are the same as those of CeOs$_2$Al$_{10}$ [S. Kimura {\it et al.}, Phys. Rev. Lett. 106, 056404 (2011).]. The $c$-$f$ hybridization intensities between the conduction and $4f$ electrons of CeRu$_2$Al$_{10}$ and CeOs$_2$Al$_{10}$ are weaker than that of CeFe$_2$Al$_{10}$, showing no magnetic ordering. These results suggest that the electronic structure with one-dimensional weak $c$-$f$ hybridization along the b axis combined with two-dimensional strong hybridization in the $ac$ plane causes charge-density wave (CDW) instability, and the CDW state then induces magnetic ordering.
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Submitted 24 August, 2011;
originally announced August 2011.
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Momentum-Dependent Hybridization Gap and dispersive in-gap state of The Kondo Semiconductor SmB6
Authors:
Hidetoshi Miyazaki,
Tetsuya Hajiri,
Takahiro Ito,
Satoru Kunii,
Shin-ichi Kimura
Abstract:
We report the temperature-dependent three-dimensional angle-resolved photoemission spectra of the Kondo semiconductor SmB$_6$. We found a difference in the temperature dependence of the peaks at the X and $Γ$ points, due to hybridization between the Sm 5d conduction band and the nearly localized Sm 4f state. The peak intensity at the X point has the same temperature dependence as the valence trans…
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We report the temperature-dependent three-dimensional angle-resolved photoemission spectra of the Kondo semiconductor SmB$_6$. We found a difference in the temperature dependence of the peaks at the X and $Γ$ points, due to hybridization between the Sm 5d conduction band and the nearly localized Sm 4f state. The peak intensity at the X point has the same temperature dependence as the valence transition below 120 K, while that at the $Γ$ point is consistent with the magnetic excitation at Q=(0.5,0.5,0.5) below 30 K. This suggests that the hybridization with the valence transition mainly occurs at the X point, and the initial state of the magnetic excitation is located at the $Γ$ point.
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Submitted 21 August, 2012; v1 submitted 17 June, 2011;
originally announced June 2011.
