-
Two-dimensional THz spectroscopy of nonlinear phononics in the topological insulator $\mathrm{MnBi}_2\mathrm{Te}_4$
Authors:
T. G. H. Blank,
K. A. Grishunin,
K. A. Zvezdin,
N. T. Hai,
J. C. Wu,
S. -H. Su,
J. -C. A. Huang,
A. K. Zvezdin,
A. V. Kimel
Abstract:
The interaction of a single-cycle THz electric field with the topological insulator $\mathrm{MnBi}_2\mathrm{Te}_4$ triggers strongly anharmonic lattice dynamics, promoting fully coherent energy transfer between the otherwise non-interacting Raman-active $E_g$ and infrared (IR)-active $E_u$ phononic modes. Two-dimensional (2D) THz spectroscopy combined with modeling based on the classical equations…
▽ More
The interaction of a single-cycle THz electric field with the topological insulator $\mathrm{MnBi}_2\mathrm{Te}_4$ triggers strongly anharmonic lattice dynamics, promoting fully coherent energy transfer between the otherwise non-interacting Raman-active $E_g$ and infrared (IR)-active $E_u$ phononic modes. Two-dimensional (2D) THz spectroscopy combined with modeling based on the classical equations of motion and symmetry analysis reveals the multi-stage process underlying the excitation of the Raman-active $E_g$ phonon. In this process, the THz electric field first prepares a coherent IR-active $E_u$ phononic state and subsequently interacts with this state to efficiently excite the $E_g$ phonon.
△ Less
Submitted 14 December, 2022;
originally announced December 2022.
-
Spin-flop led peculiar behavior of temperature-dependent anomalous Hall effect in Hf/Gd-Fe-Co
Authors:
Ramesh Chandra Bhatt,
Lin-Xiu Ye,
Ngo Trong Hai,
Jong-Ching Wu,
Te-ho Wu
Abstract:
Here we investigate the temperature dependence of anomalous Hall effect in Hf/GdFeCo/MgO sheet film and Hall bar device. The magnetic compensation temperature ($T_{comp}$) for the sheet film and device is found to be ~240 K and ~118 K, respectively. In sheet film, spin-flop** is witnessed at a considerably lower field, 0.6 T, close to $T_{comp}$. The AHE hysteresis loops in the sheet film have a…
▽ More
Here we investigate the temperature dependence of anomalous Hall effect in Hf/GdFeCo/MgO sheet film and Hall bar device. The magnetic compensation temperature ($T_{comp}$) for the sheet film and device is found to be ~240 K and ~118 K, respectively. In sheet film, spin-flop** is witnessed at a considerably lower field, 0.6 T, close to $T_{comp}$. The AHE hysteresis loops in the sheet film have a single loop whereas in the Hall bar device, hystereses consist of triple loops are observed just above the Tcomp. Moreover, the temperature-dependent anomalous Hall resistance ($R_\mathrm{AHE}$) responds unusually when a perpendicular magnetic field is applied while recording the $R_\mathrm{AHE}$. The zero-field $R_\mathrm{AHE}$ scan suggests the Hall signal generates solely from the FeCo moment. However, the behavior of 3 T-field $R_\mathrm{AHE}$ scan in which the $R_\mathrm{AHE}$ drops close to zero near the $T_{comp}$ seems to be following the net magnetization response of the device, is explained by considering the low field spin-flop** around the compensation temperature. The results presented here give important insight to understand the complex AHE behavior of ferrimagnets for their spintronic applications.
△ Less
Submitted 21 May, 2021; v1 submitted 12 April, 2021;
originally announced April 2021.
-
Sense current dependent coercivity and magnetization relaxation in Gd-Fe-Co Hall bar
Authors:
Ramesh Chandra Bhatt,
Chun-Ming Liao,
Lin-Xiu Ye,
Ngo Trong Hai,
Jong-Ching Wu,
Te-ho Wu
Abstract:
The understanding of the characteristics of a magnetic layer in a different environment is crucial for any spintronics application. Before practical applications, thorough scrutiny of such devices is compulsory. Here we study such a potential Hall device of MgO-capped Hf/GdFeCo bilayer (FeCo-rich) for magnetization relaxation around nucleation fields at different voltage probe line widths and dc s…
▽ More
The understanding of the characteristics of a magnetic layer in a different environment is crucial for any spintronics application. Before practical applications, thorough scrutiny of such devices is compulsory. Here we study such a potential Hall device of MgO-capped Hf/GdFeCo bilayer (FeCo-rich) for magnetization relaxation around nucleation fields at different voltage probe line widths and dc sensing currents. The device is characterized by anomalous Hall measurements in transverse and longitudinal Hall geometries for two different probe widths A (5 micrometer) and B (1 micrometer). The coercivities of the Hall loops (\r{ho}xy-H and Rxx-H) drop with increasing the sense current for both the probes. For probe B, the sharp and large drop in coercivity (\r{ho}xy-H loops) at comparatively lower sensing currents is observed, which is attributed to the negligible current shunting and presence of pinning site at B caused by the patterning process. The average domain wall velocities at various sensing currents for probe B are found to be smaller than probe A, from the transverse and longitudinal Hall geometry magnetization relaxation measurements, which agrees with pinning sites and Joule heating effect at probe B. The notch position in the pattern and the longitudinal Hall resistance curve peak shape suggest the domain wall propagation direction from probe B to probe A in the current channel. This study highlights the domain wall propagation at different nucleation fields, sensing currents, and the Hall probe aspect ratios.
△ Less
Submitted 25 November, 2020;
originally announced November 2020.
-
Modulation of anisotropic magnetoresistance by anomalous Hall signal and its application to real-time domain wall velocity measurement
Authors:
Ramesh Chandra Bhatt,
Yo-Yu Cheng,
Lin-Xiu Ye,
Ngo Trong Hai,
Jong-Ching Wu,
Te-ho Wu
Abstract:
We present here a way to modulate the anisotropic magnetoresistance (AMR) by anomalous Hall signal and thus measure the domain wall (DW) motion velocity at near-coercivity. We study the magnetization relaxation at the constant field in the longitudinal (Rxx) Hall geometry. We observed asymmetric Rxx peaks that appear at the DW pinning fields. This unusual magnetoresistance behavior is explained by…
▽ More
We present here a way to modulate the anisotropic magnetoresistance (AMR) by anomalous Hall signal and thus measure the domain wall (DW) motion velocity at near-coercivity. We study the magnetization relaxation at the constant field in the longitudinal (Rxx) Hall geometry. We observed asymmetric Rxx peaks that appear at the DW pinning fields. This unusual magnetoresistance behavior is explained by considering the AMR modulation by the anomalous Hall voltage. In the proposed method, using the magnetization relaxation, the real-time DW velocity measurement is much easier in comparison to the other microscopy methods. Moreover, the additional signal from anomalous Hall voltage makes this technique simpler and sensitive for DW velocity measurements, which can be useful for various spintronic sensing applications.
△ Less
Submitted 4 May, 2020;
originally announced May 2020.
