Showing 1–5 of 5 results for author: Hafermann, M

Hyper-do** of Silicon for Plasmonics in the Telecommunication Range

Authors: Jura Rensberg, Angela Barreda, Kevin Wolf, Andreas Undisz, Jürgen Salfeld, Sebastian Geburt, Isabelle Staude, Carsten Ronning, Martin Hafermann

Abstract: We investigate hyper-do**, a promising approach to introduce a high concentration of impurities into silicon beyond its solid solubility limit, for its potential applications in near-infrared plasmonics. We systematically explore the incorporation of dopants into silicon using ion implantation and pulsed laser melting annealing processes. Reflectance spectra analysis shows an achievable plasma w… ▽ More We investigate hyper-do**, a promising approach to introduce a high concentration of impurities into silicon beyond its solid solubility limit, for its potential applications in near-infrared plasmonics. We systematically explore the incorporation of dopants into silicon using ion implantation and pulsed laser melting annealing processes. Reflectance spectra analysis shows an achievable plasma wavelength of around 1.5 $μ$m for dopant concentrations exceeding 4 at.%. Complex refractive index data for the doped silicon samples are extracted, revealing their potential for near-infrared plasmonic applications. Moreover, we propose a fabrication process that allows for the creation of hyper-doped silicon nanoparticles without the need for additional masking steps. Our research paves the way for designing CMOS-compatible plasmonic nanostructures operating in the telecommunication wavelength range. The study's findings offer significant insights into the utilization of hyper-doped silicon for advanced photonic and optoelectronic applications. △ Less

Submitted 17 May, 2024; originally announced May 2024.

Heavily doped zinc oxide with plasma frequencies in the telecommunication wavelength range

Authors: Alexander Koch, Hongyan Mei, Jura Rensberg, Martin Hafermann, Jad Salman, Chenghao Wan, Raymond Wambold, Daniel Blaschke, Heidemarie Schmidt, Jürgen Salfeld, Sebastian Geburt, Mikhail A. Kats, Carsten Ronning

Abstract: We demonstrate heavy and hyper do** of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post-implantation laser annealing. Ion implantation allows for the incorporation of impurities with nearly arbitrary concentrations, and the laser-annealing process enables dopant activation close to or beyond the solid-solubility limit of Ga in ZnO. We achieved… ▽ More We demonstrate heavy and hyper do** of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post-implantation laser annealing. Ion implantation allows for the incorporation of impurities with nearly arbitrary concentrations, and the laser-annealing process enables dopant activation close to or beyond the solid-solubility limit of Ga in ZnO. We achieved heavily doped ZnO:Ga with free-carrier concentrations of ~10^21 cm^(-3), resulting in a plasma wavelength of 1.02 um, which is substantially shorter than the telecommunication wavelength of 1.55 um. Thus, our approach enables the control of the plasma frequency of ZnO from the far infrared down to 1.02 um, providing a promising plasmonic material for applications in this regime. △ Less

Submitted 31 October, 2022; originally announced October 2022.

Comments: Main text + supplementary

A photonic integrated circuit based erbium-doped amplifier

Authors: Yang Liu, Zheru Qiu, Xinru Ji, Jijun He, Johann Riemensberger, Martin Hafermann, Rui Ning Wang, Junqiu Liu, Carsten Ronning, Tobias J. Kippenberg

Abstract: Erbium-doped fiber amplifiers have revolutionized long-haul optical communications and laser technology. Erbium ions could equally provide a basis for efficient optical amplification in photonic integrated circuits. However, this approach has thus far remained impractical due to insufficient output power. Here, we demonstrate a photonic integrated circuit based erbium amplifier reaching 145 mW out… ▽ More Erbium-doped fiber amplifiers have revolutionized long-haul optical communications and laser technology. Erbium ions could equally provide a basis for efficient optical amplification in photonic integrated circuits. However, this approach has thus far remained impractical due to insufficient output power. Here, we demonstrate a photonic integrated circuit based erbium amplifier reaching 145 mW output power and more than 30 dB small-signal gain -- on par with commercial fiber amplifiers and beyond state-of-the-art III-V heterogeneously integrated semiconductor amplifiers. We achieve this by applying ion implantation to recently emerged ultralow-loss Si3N4 photonic integrated circuits with meter-scale-length waveguides. We utilize the device to increase by 100-fold the output power of soliton microcombs, required for low-noise photonic microwave generation or as a source for wavelength-division multiplexed optical communications. Endowing Si3N4 photonic integrated circuits with gain enables the miniaturization of a wide range of fiber-based devices such as high-pulse-energy femtosecond mode-locked lasers. △ Less

Submitted 12 April, 2022; v1 submitted 5 April, 2022; originally announced April 2022.

Comments: 25 pages, 16 figures

Journal ref: Science, 376 (6599), 1309-1313 (2022)

Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams

Authors: Hongyan Mei, Alexander Koch, Chenghao Wan, Jura Rensberg, Zhen Zhang, Jad Salman, Martin Hafermann, Maximilian Schaal, Yuzhe Xiao, Raymond Wambold, Shriram Ramanathan, Carsten Ronning, Mikhail A. Kats

Abstract: We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable do** of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subs… ▽ More We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable do** of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, vanadium dioxide (VO2), locally modifying its insulator-to-metal transition (IMT) temperature by range of ~25 degrees C. Such area-selective modification of metal oxides by direct writing using a FIB provides a simple, mask-less route to the fabrication of optical structures, especially when multiple or continuous levels of do** or defect density are required. △ Less

Submitted 2 June, 2022; v1 submitted 3 February, 2022; originally announced February 2022.

Comments: Main text + supplementary. Updated manuscript with some more science

Fast recovery of ion-irradiation-induced defects in Ge2Sb2Te5 thin films at room temperature

Authors: Martin Hafermann, Robin Schock, Chenghao Wan, Jura Rensberg, Mikhail A. Kats, Carsten Ronning

Abstract: Phase-change materials serve a broad field of applications ranging from non-volatile electronic memory to optical data storage by providing reversible, repeatable, and rapid switching between amorphous and crystalline states accompanied by large changes in the electrical and optical properties. Here, we demonstrate how ion irradiation can be used to tailor disorder in initially crystalline Ge2Sb2T… ▽ More Phase-change materials serve a broad field of applications ranging from non-volatile electronic memory to optical data storage by providing reversible, repeatable, and rapid switching between amorphous and crystalline states accompanied by large changes in the electrical and optical properties. Here, we demonstrate how ion irradiation can be used to tailor disorder in initially crystalline Ge2Sb2Te5 (GST) thin films via the intentional creation of lattice defects. We found that continuous Ar ion irradiation at room temperature of GST films causes complete amorphization of GST when exceeding 0.6 (for rock-salt GST) and 3 (for hexagonal GST) displacements per atom (n_dpa). While the transition from rock-salt to amorphous GST is caused by progressive amorphization via the accumulation of lattice defects, several transitions occur in hexagonal GST upon ion irradiation. In hexagonal GST, the creation of point defects and small defect clusters leads to disordering of intrinsic vacancy layers (van der Waals gaps) that drives the electronic metal-insulator transition. Increasing disorder then induces a structural transition from hexagonal to rock-salt and then leads to amorphization. Furthermore, we observed different annealing behavior of defects for rock-salt and hexagonal GST. The higher amorphization threshold in hexagonal GST compared to rock-salt GST is caused by an increased defect-annealing rate, i.e., a higher resistance against ion-beam-induced disorder. Moreover, we observed that the recovery of defects in GST is on the time scale of seconds or less at room temperature. △ Less

Submitted 9 September, 2021; v1 submitted 2 September, 2021; originally announced September 2021.

Comments: Main text + supplementary. New version to slightly update the acknowledgements