Showing 1–15 of 15 results for author: Hader, J

Intrinsic Carrier Losses in Tellurium Due to Radiative and Auger Recombinations

Authors: Jörg Hader, Sven C. Liebscher, Jerome V. Moloney, Stephan W. Koch

Abstract: Fully microscopic many-body models based on inputs from first principle density functional theory are used to calculate the carrier losses due to radiative- and Auger-recombinations in bulk tellurium. It is shown that Auger processes dominate the losses for carrier densities in the range typical for applications as lasers. The Auger loss depends crucially on the energetic position of the $H_6$ val… ▽ More Fully microscopic many-body models based on inputs from first principle density functional theory are used to calculate the carrier losses due to radiative- and Auger-recombinations in bulk tellurium. It is shown that Auger processes dominate the losses for carrier densities in the range typical for applications as lasers. The Auger loss depends crucially on the energetic position of the $H_6$ valence bands. At cryogenic temperatures of 50$\,$K (100$\,$K) the Auger coefficient, $C$, varies by about six (three) orders of magnitude within the range of published distances between these bands and the valence bandedge. Values for $C$ at the high and low end of these ranges are found if the distance is smaller or larger than the bandgap, respectively. At room temperature the sensitivity is reduced to about a factor of four with $C$ values ranging between $0.4$ and $1.6\times 10^{-27}$cm$^6$s$^{-1}$. Here, radiative losses dominate for carrier densities up to about $10^{16}/$cm$^3$ with a loss coefficient $B\approx 10^{-11}$cm$^3$s$^{-1}$. The radiative losses are about two to three times lower than in typical bulk III-V materials for comparable wavelengths. △ Less

Submitted 10 August, 2022; originally announced August 2022.

Comments: 5 pages, 4 figures. Submitted to Applied Physics Letters on 07/27/2022

On the importance of electron-electron and electron-phonon scatterings and energy renormalizations during carrier relaxation in monolayer transition-metal dichalcogenides

Authors: J. Hader, J. Neuhaus, J. V. Moloney, S. W. Koch

Abstract: An $\it{ab \,\, initio}$ based fully microscopic many-body approach is used to study the carrier relaxation dynamics in monolayer transition-metal dichalcogenides. Bandstructures and wavefunctions as well as phonon energies and coupling matrix elements are calculated using density functional theory. The resulting dipole and Coulomb matrix elements are implemented in the Dirac-Bloch equations to ca… ▽ More An $\it{ab \,\, initio}$ based fully microscopic many-body approach is used to study the carrier relaxation dynamics in monolayer transition-metal dichalcogenides. Bandstructures and wavefunctions as well as phonon energies and coupling matrix elements are calculated using density functional theory. The resulting dipole and Coulomb matrix elements are implemented in the Dirac-Bloch equations to calculate carrier-carrier and carrier-phonon scatterings throughout the whole Brillouin zone. It is shown that carrier scatterings lead to a relaxation into hot quasi-Fermi distributions on a single femtosecond timescale. Carrier cool down and inter-valley transitions are mediated by phonon scatterings on a picosecond timescale. Strong, density-dependent energy renormalizations are shown to be valley-dependent. For MoTe$_2$, MoSe$_2$ and MoS$_2$ the change of energies with occupation is found to be about 50$\%$ stronger in the $Σ$ and $Λ$ side valleys than in the $K$ and $K'$ valleys. However, for realistic carrier densities, the materials always maintain their direct bandgap at the $K$ points of the Brillouin zone. △ Less

Submitted 21 April, 2022; v1 submitted 2 February, 2022; originally announced February 2022.

Comments: 10 pages, 8 figures

Microscopic Theory for the Incoherent Resonant and Coherent Off-Resonant Optical Response of Tellurium

Authors: S. C. Liebscher, M. K. Hagen, J. Hader, J. V. Moloney, S. W. Koch

Abstract: An $\it{ab \,\, initio}$ based fully microscopic approach is applied to study the nonlinear optical response of bulk Tellurium. The structural and electronic properties are calculated from first principles using the shLDA-1/2 method within density functional theory. The resulting bandstructure and dipole matrix elements serve as input for the quantum mechanical evaluation of the anisotropic linear… ▽ More An $\it{ab \,\, initio}$ based fully microscopic approach is applied to study the nonlinear optical response of bulk Tellurium. The structural and electronic properties are calculated from first principles using the shLDA-1/2 method within density functional theory. The resulting bandstructure and dipole matrix elements serve as input for the quantum mechanical evaluation of the anisotropic linear optical absorption spectra yielding results in excellent agreement with published experimental data. Assuming quasi-equilibrium carrier distributions in the conduction and valence bands, absorption/gain and spontaneous emission spectra are computed from the semiconductor Bloch and luminescence equations. For ultrafast intense off-resonant excitation, the generation of high-harmonics is evaluated and the emission spectra are calculated for samples of different thickness. △ Less

Submitted 19 August, 2021; originally announced August 2021.

Comments: 10 pages, 9 figures

Low-threshold operation of GaAs-based (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well lasers emitting in the O-band

Authors: Christian Fuchs, Imad Limame, Stefan Reinhard, Jannik Lehr, Jörg Hader, Jerome V. Moloney, Ada Bäumner, Stephan W. Koch, Wolfgang Stolz

Abstract: The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates for improved homogeneity while the growth process is carried out in a single run for an improved quality. Furthermore, the optical confinement factor is increas… ▽ More The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates for improved homogeneity while the growth process is carried out in a single run for an improved quality. Furthermore, the optical confinement factor is increased by increasing the aluminum concentration within the cladding layers to a value of 65%. The procedure is carried out for devices with emission wavelengths of 1.26 micrometer as well as 1.30 micrometer. Differential efficiencies as high as 58% and threshold current densities as low as 0.16 kA/cm^2 are observed in case of devices emitting at 1.26 micrometer at room temperature. Furthermore, excellent characteristic temperatures of T_0=(72 plus minus 5)K and T_1=(293 plus minus 16) K are recorded in the temperature range between 10 degree Celsius and 100 degree Celsius. Devices emitting at 1.30 micrometer exhibit differential efficiencies of 31% and threshold current densities of 0.50 kA/cm^2 at room temperature. Further improvements of these properties and wavelength extension schemes are briefly discssused. △ Less

Submitted 20 December, 2020; originally announced December 2020.

Temperature-dependent spectral properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructure lasers

Authors: Christian Fuchs, Ada Baeumner, Anja Brueggemann, Christian Berger, Christoph Moeller, Stefan Reinhard, Joerg Hader, Jerome V. Moloney, Stephan W. Koch, Wolfgang Stolz

Abstract: This paper discusses the temperature-dependent properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructures for laser applications based on theoretical modeling as well as experimental findings. A microscopic theory is applied to discuss band bending effects giving rise to the characteristic blue shift with increasing charge carrier density observed in type-II heterostructures. Further… ▽ More This paper discusses the temperature-dependent properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructures for laser applications based on theoretical modeling as well as experimental findings. A microscopic theory is applied to discuss band bending effects giving rise to the characteristic blue shift with increasing charge carrier density observed in type-II heterostructures. Furthermore, gain spectra for a W-quantum well heterostructure are calculated up to high charge carrier densities. At these high charge carrier densities, the interplay between multiple type-II transitions results in broad and flat gain spectra with a spectral width of approximately 160 nm. Furthermore, the temperature-dependent properties of broad-area edge-emitting lasers are analyzed using electroluminescence as well as laser characteristic measurements. A first indication for the theoretically predicted broad gain spectra is presented and the interplay between the temperature-dependent red shift and the charge carrier density-dependent blue shift is discussed. A combination of these effects results in a significant reduction of the temperature-induced red shift of the emission wavelengths and even negative shift rates of (-0.10 plusminus 0.04) nm/K are achieved. △ Less

Submitted 2 December, 2020; originally announced December 2020.

Extension of the LDA-1/2 method to the material class of bismuth containing III-V semiconductors

Authors: Sven C. Liebscher, Lars C. Bannow, Jörg Hader, Jerome V. Moloney, Stephan W. Koch

Abstract: The LDA-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative example of Ga(SbBi) with Bi concentrations below $10 \%$, it is shown that this method works very efficiently, especially due to its reasonably low demand on computer memory. The resulting bandstructure and wavefunctions are used to compute t… ▽ More The LDA-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative example of Ga(SbBi) with Bi concentrations below $10 \%$, it is shown that this method works very efficiently, especially due to its reasonably low demand on computer memory. The resulting bandstructure and wavefunctions are used to compute the interaction matrix elements that serve as input to microscopic calculations of the optical properties and intrinsic losses relevant for optoelectronic applications of dilute bismides. △ Less

Submitted 11 August, 2020; originally announced August 2020.

Mode-locking in vertical external-cavity surface-emitting lasers with type-II quantum-well configurations

Authors: I. Kilen, S. W. Koch, J. Hader, J. V. Moloney

Abstract: A microscopic study of mode-locked pulse generation is presented for vertical external-cavity surface-emitting lasers utilizing type-II quantum well configurations. The coupled Maxwell semiconductor Bloch equations are solved numerically where the type-II carrier replenishment is modeled via suitably chosen reservoirs. Conditions for stable mode-locked pulses are identified allowing for pulses in… ▽ More A microscopic study of mode-locked pulse generation is presented for vertical external-cavity surface-emitting lasers utilizing type-II quantum well configurations. The coupled Maxwell semiconductor Bloch equations are solved numerically where the type-II carrier replenishment is modeled via suitably chosen reservoirs. Conditions for stable mode-locked pulses are identified allowing for pulses in the \unit[100]{fs} range. Design strategies for type-II configurations are proposed that avoid potentially unstable pulse dynamics. △ Less

Submitted 2 April, 2019; originally announced April 2019.

Comments: Main paper with supplementary materials

Ultrafast band-gap renormalization and build-up of optical gain in monolayer MoTe$_2$

Authors: Lars Meckbach, Jörg Hader, Josefine Neuhaus, Ulrich Huttner, Johannes Steiner, Tineke Stroucken, Jerry V. Moloney, Stephan W. Koch

Abstract: The dynamics of band-gap renormalization and gain build-up in monolayer MoTe$_2$ is investigated by evaluating the non-equilibrium Dirac-Bloch equations with the incoherent carrier-carrier and carrier-phonon scattering treated via quantum-Boltzmann type scattering equations. For the case where an approximately $300$ fs-long high intensity optical pulse generates charge-carrier densities in the gai… ▽ More The dynamics of band-gap renormalization and gain build-up in monolayer MoTe$_2$ is investigated by evaluating the non-equilibrium Dirac-Bloch equations with the incoherent carrier-carrier and carrier-phonon scattering treated via quantum-Boltzmann type scattering equations. For the case where an approximately $300$ fs-long high intensity optical pulse generates charge-carrier densities in the gain regime, the strong Coulomb coupling leads to a relaxation of excited carriers on a few fs time scale. The pump-pulse generation of excited carriers induces a large band-gap renormalization during the time scale of the pulse. Efficient phonon coupling leads to a subsequent carrier thermalization within a few ps, which defines the time scale for the optical gain build-up energetically close to the low-density exciton resonance. △ Less

Submitted 4 February, 2020; v1 submitted 20 March, 2019; originally announced March 2019.

Comments: This is a post-peer-review version of an article published in Physical Review B

Journal ref: Phys. Rev. B 101, 075401 (2020)

Microscopic calculation of the optical properties and intrinsic losses in the methylammonium lead iodide perovskite system

Authors: Lars C. Bannow, Jörg Hader, Jerome V. Moloney, Stephan W. Koch

Abstract: For opto-electronic and photo-voltaic applications of perovskites, it is essential to know the optical properties and intrinsic losses of the used materials. A systematic microscopic analysis is presented for the example of methylammonium lead iodide where density functional theory is used to calculate the electronic band structure as well as the dipole and Coulomb matrix elements. These results s… ▽ More For opto-electronic and photo-voltaic applications of perovskites, it is essential to know the optical properties and intrinsic losses of the used materials. A systematic microscopic analysis is presented for the example of methylammonium lead iodide where density functional theory is used to calculate the electronic band structure as well as the dipole and Coulomb matrix elements. These results serve as input for a many-body quantum approach used to compute the absorption, photoluminescence, and the optical and Auger losses for a wide range of application conditions. To illustrate the theory, the excitonic properties of the material system are investigated and numerical results are presented for typical photo-voltaic operation conditions and for the elevated carrier densities needed for laser operation. △ Less

Submitted 26 October, 2018; originally announced October 2018.

Comments: 6 pages, 5 figures

Non-equilibrium dynamics in the dual-wavelength operation of Vertical external-cavity surface-emitting lasers

Authors: I. Kilen, J. Hader, S. W. Koch, J. V. Moloney

Abstract: Microscopic many-body theory coupled to Maxwell's equation is used to investigate dual-wavelength operation in vertical external-cavity surface-emitting lasers. The intrinsically dynamic nature of coexisting emission wavelengths in semiconductor lasers is associated with characteristic non-equilibrium carrier dynamics which causes significant deformations of the quasi-equilibrium gain and carrier… ▽ More Microscopic many-body theory coupled to Maxwell's equation is used to investigate dual-wavelength operation in vertical external-cavity surface-emitting lasers. The intrinsically dynamic nature of coexisting emission wavelengths in semiconductor lasers is associated with characteristic non-equilibrium carrier dynamics which causes significant deformations of the quasi-equilibrium gain and carrier inversion. Extended numerical simulations are employed to efficiently investigate the parameter space to identify the regime for two-wavelength operation. Using a frequency selective intracavity etalon, two families of modes are stabilized with dynamical interchange of the strongest emission peaks. For this operation mode, anti-correlated intensity noise is observed in agreement with the experiment. A method using effective frequency selective filtering is suggested for stabilization genuine dual-wavelength output. △ Less

Submitted 23 October, 2018; originally announced October 2018.

Comments: 15 pages, 7 figures

Valence band splitting in bulk dilute bismides

Authors: Lars C. Bannow, Stefan C. Badescu, Jörg Hader, Jerome V. Moloney, Stephan W. Koch

Abstract: The electronic structure of bulk GaAs$_{1-x}$Bi$_x$ systems for different atomic configurations and Bi concentrations is calculated using density functional theory. The results show a Bi-induced splitting between the light-hole and heavy-hole bands at the $Γ$-point. We find a good agreement between our calculated splittings and experimental data. The magnitude of the splitting strongly depends on… ▽ More The electronic structure of bulk GaAs$_{1-x}$Bi$_x$ systems for different atomic configurations and Bi concentrations is calculated using density functional theory. The results show a Bi-induced splitting between the light-hole and heavy-hole bands at the $Γ$-point. We find a good agreement between our calculated splittings and experimental data. The magnitude of the splitting strongly depends on the local arrangement of the Bi atoms but not on the uni-directional lattice constant of the supercell. The additional influence of external strain due to epitaxial growth on GaAs substrates is studied by fixing the in-plane lattice constants. △ Less

Submitted 28 September, 2017; originally announced September 2017.

Journal ref: Appl. Phys. Lett. 111, 182103 (2017)

An ab initio based approach to optical properties of semiconductor heterostructures

Authors: L. C. Bannow, P. Rosenow, P. Springer, E. W. Fischer, J. Hader, J. V. Moloney, R. Tonner, S. W. Koch

Abstract: A procedure is presented that combines density functional theory computations of bulk semiconductor alloys with the semiconductor Bloch equations, in order to achieve an ab initio based prediction of the optical properties of semiconductor alloy heterostructures. The parameters of an eight-band kp-Hamiltonian are fitted to the effective band structure of an appropriate alloy. The envelope function… ▽ More A procedure is presented that combines density functional theory computations of bulk semiconductor alloys with the semiconductor Bloch equations, in order to achieve an ab initio based prediction of the optical properties of semiconductor alloy heterostructures. The parameters of an eight-band kp-Hamiltonian are fitted to the effective band structure of an appropriate alloy. The envelope function approach is applied to model the quantum well using the kp-wave functions and eigenvalues as starting point for calculating the optical properties of the heterostructure. It is shown that Luttinger parameters derived from band structures computed with the TB09 density functional reproduce extrapolated values. The procedure is illustrated by computing the absorption spectra for a (AlGa)As/Ga(AsP)/(AlGa)As quantum well system with varying phosphide content in the active layer. △ Less

Submitted 4 April, 2017; originally announced April 2017.

Journal ref: Modelling Simul. Mater. Sci. Eng. 25, 065001 (2017)

Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures

Authors: S. Gies, M. J. Weseloh, C. Fuchs, W. Stolz, J. Hader, J. V. Moloney, S. W. Koch, W. Heimbrodt

Abstract: A series of (Ga,In)As/GaAs/Ga(As,Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k$\cdot$p method. This theory-experiment comparison reveals an unusual, temperature… ▽ More A series of (Ga,In)As/GaAs/Ga(As,Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k$\cdot$p method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga,In)As and Ga(As,Sb) quantum wells. △ Less

Submitted 12 October, 2016; originally announced October 2016.

Comments: 6 pages, 8 figures

Gain spectroscopy of a type-II VECSEL chip

Authors: Christian Lammers, Markus Stein, Christian Berger, Christoph Möller, Christian Fuchs, Antje Ruiz Perez, Arash Rahimi-Iman, Jörg Hader, Jerome Moloney, Wolfgang Stolz, Stephan W. Koch, Martin Koch

Abstract: Using optical pump-white light probe spectroscopy the gain dynamics is investigated for a VECSEL chip which is based on a type-II heterostructure. The active region the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by experimental spe… ▽ More Using optical pump-white light probe spectroscopy the gain dynamics is investigated for a VECSEL chip which is based on a type-II heterostructure. The active region the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by experimental spectra. The results show a gain buildup on the type-II chip which is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from reduced electron-hole scattering. △ Less

Submitted 18 August, 2016; originally announced August 2016.

Comments: 4 pages, 4 figures

Configuration Dependence of Band Gap Narrowing and Localization in Dilute GaAs_{1-x} Bi_x Alloys

Authors: Lars C. Bannow, Oleg Rubel, Phil Rosenow, Stefan C. Badescu, Jorg Hader, Jerome V. Moloney, Ralf Tonner, Stephan W. Koch

Abstract: Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of Eg has been found to be linear at low concentrations x and dominated by a valence band-defect level anticrossing between As and Bi occupied p levels. This de… ▽ More Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of Eg has been found to be linear at low concentrations x and dominated by a valence band-defect level anticrossing between As and Bi occupied p levels. This dependence breaks down at high concentrations where empirical models accounting only for the As-Bi interaction are not applicable. Predictive models for the valence band hybridization require a first-principle understanding which can be obtained by density functional theory with the main challenges being the proper description of Eg and the spin-orbit coupling. By using an efficient method to include these effects, it is shown here that at high concentrations Eg is modified mainly by a Bi-Bi p orbital interaction and by the large Bi atom-induced strain. This points to the role of different atomic configurations obtained by varying the experimental growth conditions in engineering arsenide band gaps, in particular for telecommunication laser technology. △ Less

Submitted 5 February, 2016; originally announced February 2016.

Comments: 22 pages, 10 Figures

Journal ref: Phys. Rev. B 93, 205202 (2016)