Tuning of the Quantum-Confined Stark Effect in Wurtzite $[000\bar{1}]$ Group-III-Nitride Nanostructures by the Internal-Field-Guarded-Active-Region Design
Authors:
S. Schlichting,
G. M. O. Hönig,
J. Müßener,
P. Hille,
T. Grieb,
J. Teubert,
J. Schörmann,
M. R. Wagner,
A. Rosenauer,
M. Eickhoff,
A. Hoffmann,
G. Callsen
Abstract:
Recently, we suggested an unconventional approach [the so-called Internal-Field-Guarded-Active-Region Design (IFGARD)] for the elimination of the crystal polarization field induced quantum confined Stark effect (QCSE) in polar semiconductor heterostructures. And in this work, we demonstrate by means of micro-photoluminescence techniques the successful tuning as well as the elimination of the QCSE…
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Recently, we suggested an unconventional approach [the so-called Internal-Field-Guarded-Active-Region Design (IFGARD)] for the elimination of the crystal polarization field induced quantum confined Stark effect (QCSE) in polar semiconductor heterostructures. And in this work, we demonstrate by means of micro-photoluminescence techniques the successful tuning as well as the elimination of the QCSE in strongly polar $[000\bar{1}]$ wurtzite GaN/AlN nanodiscs while reducing the exciton life times by more than two orders of magnitude. The IFGARD based elimination of the QCSE is independent of any specific crystal growth procedures. Furthermore, the cone-shaped geometry of the utilized nanowires (which embeds the investigated IFGARD nanodiscs) facilitates the experimental differentiation between quantum confinement- and QCSE-induced emission energy shifts. Due to the IFGARD, both effects become independently adaptable.
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Submitted 21 July, 2017;
originally announced July 2017.
Shielding electrostatic fields in polar semiconductor nanostructures
Authors:
G. M. O. Hönig,
S. Westerkamp,
A. Hoffmann,
G. Callsen
Abstract:
Modern opto-electronic devices are based on semiconductor heterostructures employing the process of electron-hole pair annihilation. In particular polar materials enable a variety of classic and even quantum light sources, whose on-going optimisation endeavours challenge generations of researchers. However, the key challenge - the inherent electric crystal polarisation of such materials - remains…
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Modern opto-electronic devices are based on semiconductor heterostructures employing the process of electron-hole pair annihilation. In particular polar materials enable a variety of classic and even quantum light sources, whose on-going optimisation endeavours challenge generations of researchers. However, the key challenge - the inherent electric crystal polarisation of such materials - remains unsolved and deteriorates the electron-hole pair annihilation rate. Here, our approach introduces a sequence of reverse interfaces to compensate these polarisation effects, while the polar, natural crystal growth direction is maintained provoking a boost in device performance. Former research approaches like growth on less-polar crystal planes or even the stabilization of unnatural phases never reached industrial maturity. In contrast, our solution allows the adaptation of all established industrial processes, while the polarisation becomes adjustable; even across zero. Hence, our approach marks the onset of an entire class of ultra-fast and efficient devices based on any polar material.
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Submitted 22 February, 2016;
originally announced February 2016.
