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Buildup and dephasing of Floquet-Bloch bands on subcycle time scales
Authors:
S. Ito,
M. Schüler,
M. Meierhofer,
S. Schlauderer,
J. Freudenstein,
J. Reimann,
D. Afanasiev,
K. A. Kokh,
O. E. Tereshchenko,
J. Güdde,
M. A. Sentef,
U. Höfer,
R. Huber
Abstract:
Strong light fields have created spectacular opportunities to tailor novel functionalities of solids. Floquet-Bloch states can form under periodic driving of electrons and enable exotic quantum phases. On subcycle time scales, lightwaves can simultaneously drive intraband currents and interband transitions, which enable high-harmonic generation (HHG) and pave the way towards ultrafast electronics.…
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Strong light fields have created spectacular opportunities to tailor novel functionalities of solids. Floquet-Bloch states can form under periodic driving of electrons and enable exotic quantum phases. On subcycle time scales, lightwaves can simultaneously drive intraband currents and interband transitions, which enable high-harmonic generation (HHG) and pave the way towards ultrafast electronics. Yet, the interplay of intra- and interband excitations as well as their relation with Floquet physics have been key open questions as dynamical aspects of Floquet states have remained elusive. Here we provide this pivotal link by pioneering the ultrafast buildup of Floquet-Bloch bands with time- and angle-resolved photoemission spectroscopy. We drive surface states on a topological insulator with mid-infrared fields - strong enough for HHG - and directly monitor the transient band structure with subcycle time resolution. Starting with strong intraband currents, we observe how Floquet sidebands emerge within a single optical cycle; intraband acceleration simultaneously proceeds in multiple sidebands until high-energy electrons scatter into bulk states and dissipation destroys the Floquet bands. Quantum nonequilibrium calculations explain the simultaneous occurrence of Floquet states with intra- and interband dynamics. Our joint experiment-theory study opens up a direct time-domain view of Floquet physics and explores the fundamental frontiers of ultrafast band-structure engineering.
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Submitted 22 November, 2023;
originally announced November 2023.
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Coherent and incoherent excitation pathways in time-resolved photoemission orbital tomography of CuPc/Cu(001)-2O
Authors:
Alexa Adamkiewicz,
Miriam Raths,
Monja Stettner,
Marcel Theilen,
Lasse Münster,
Sabine Wenzel,
Mark Hutter,
Sergey Soubatch,
Christian Kumpf,
François C. Bocquet,
Robert Wallauer,
Frank Stefan Tautz,
Ulrich Höfer
Abstract:
Time-resolved photoemission orbital tomography (tr-POT) offers unique possibilities for tracing molecular electron dynamics. The recorded pump-induced changes of the angle-resolved photoemission intensities allow to characterize unoccupied molecular states in momentum space and to deduce the incoherent temporal evolution of their population. Here, we show for the example of CuPc/Cu(001)-2O that th…
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Time-resolved photoemission orbital tomography (tr-POT) offers unique possibilities for tracing molecular electron dynamics. The recorded pump-induced changes of the angle-resolved photoemission intensities allow to characterize unoccupied molecular states in momentum space and to deduce the incoherent temporal evolution of their population. Here, we show for the example of CuPc/Cu(001)-2O that the method also gives access to the coherent regime and that different excitation pathways can be disentangled by a careful analysis of the time-dependent change of the photoemission momentum pattern. In particular, we demonstrate by varying photon energy and polarization of the pump light, how the incoherent temporal evolution of the LUMO distribution can be distinguished from coherent contributions of the projected HOMO. Moreover, we report the selective excitation of molecules with a specific orientation at normal incidence by aligning the electric field of the pump light along the molecular axis.
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Submitted 22 November, 2023;
originally announced November 2023.
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Strongly coupled interface electronic states and interface phonon mode at GaP/Si(001)
Authors:
Gerson Mette,
Kunie Ishioka,
Steven Youngkin,
Wolfgang Stolz,
Kerstin Volz,
Ulrich Höfer
Abstract:
Ultrafast carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced reflectivity signal exhibits a resonant enhancement at pump-photon energies of 1.4 eV, which can be assigned to an optical transition between electronic interface states. The transient reflectivity is modulated by a cohe…
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Ultrafast carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced reflectivity signal exhibits a resonant enhancement at pump-photon energies of 1.4 eV, which can be assigned to an optical transition between electronic interface states. The transient reflectivity is modulated by a coherent oscillation at 2 THz, whose amplitude also becomes maximum at 1.4 eV. The observed resonant behavior of the phonon mode in combination with a characteristic wavelength-dependence of, both, its frequency and initial phase, strongly indicate that the 2-THz mode is a difference-combination mode of a GaP-like and a Si-like phonon at the heterointerface and that this second-order scattering process can be enhanced by a double resonance involving the interfacial electronic states.
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Submitted 7 May, 2023;
originally announced May 2023.
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Ultrafast electron dynamics in a topological surface state observed in two-dimensional momentum space
Authors:
J. Reimann,
K. Sumida,
M. Kakoki,
K. A. Kokh,
O. E. Tereshchenko,
A. Kimura,
J. Güdde,
U. Höfer
Abstract:
We study ultrafast population dynamics in the topological surface state of Sb$_2$Te$_3$ in two-dimensional momentum space with time- and angle-resolved two-photon photoemission. Linear polarized mid-infrared pump pulses are used to permit a direct optical excitation across the Dirac point. We show that this resonant excitation is strongly enhanced within the Dirac cone along three of the six…
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We study ultrafast population dynamics in the topological surface state of Sb$_2$Te$_3$ in two-dimensional momentum space with time- and angle-resolved two-photon photoemission. Linear polarized mid-infrared pump pulses are used to permit a direct optical excitation across the Dirac point. We show that this resonant excitation is strongly enhanced within the Dirac cone along three of the six $\barΓ$-$\bar{M}$ directions and results in a macroscopic photocurrent when the plane of incidence is aligned along a $\barΓ$-$\bar{K}$ direction. Our experimental approach makes it possible to disentangle the decay of transiently excited population and photocurent by elastic and inelastic electron scattering within the full Dirac cone in unprecedented detail. This is utilized to show that do** of Sb$_2$Te$_3$ by vanadium atoms strongly enhances inelastic electron scattering to lower energies, but only scarcely affects elastic scattering around the Dirac cone.
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Submitted 20 December, 2022;
originally announced December 2022.
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Separation of interface and substrate carrier dynamics at a heterointerface based on coherent optical phonons
Authors:
Kunie Ishioka,
Ethan Angerhoffer,
Christopher J. Stanton,
Gerson Mette,
Kerstin Volz,
Wolfgang Stolz,
Ulrich Höfer
Abstract:
Transient reflectivity spectroscopy is widely used to study ultrafast carrier- and phonon-dynamics in semiconductors. In their heterostructures, it is often not straightforward to distinguish contributions to the signal from the various layers. In this work, we perform transient reflectivity measurements on lattice-matched GaP/Si(001) using a near infrared pulse, to which GaP is transparent. The p…
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Transient reflectivity spectroscopy is widely used to study ultrafast carrier- and phonon-dynamics in semiconductors. In their heterostructures, it is often not straightforward to distinguish contributions to the signal from the various layers. In this work, we perform transient reflectivity measurements on lattice-matched GaP/Si(001) using a near infrared pulse, to which GaP is transparent. The pump laser pulse can generate coherent longitudinal optical (LO) phonons both in the GaP overlayer as well as in the Si substrate which have distinct frequencies. This enables us to track the amplitude of the respective signal contributions as a function of GaP layer thickness $d$. The Si phonon amplitude in the signal exhibits an oscillatory behavior with increasing $d$. This can be quantitatively explained by the interference of the probe light reflected at the air/GaP/Si heterointerface. Based on this knowledge, we can then separate the interface- and the substrate-contributions in the carrier-induced non-oscillatory transient reflectivity signal. The obtained interface signal provides evidence for ultrafast carrier injection from the Si substrate into the GaP overlayer. This is also corroborated by examining the deviation of the polarization-dependence of the GaP coherent optical phonon signal from that of the bulk semiconductor.
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Submitted 8 October, 2021;
originally announced October 2021.
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Ultrafast charge-transfer dynamics in twisted MoS$_2$/WSe$_2$ heterostructures
Authors:
J. E. Zimmermann,
M. Axt,
F. Mooshammer,
P. Nagler,
C. Schüller,
T. Korn,
U. Höfer,
G. Mette
Abstract:
Two-dimensional transition metal dichalcogenides (TMD) offer a unique platform for creating van-der-Waals heterojunctions with fascinating physical properties and promising applications in optoelectronics and valleytronics. Because of their typical type-II band alignment, photoexcited electrons and holes can separate via interfacial charge transfer. To understand the nature and the dynamics of thi…
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Two-dimensional transition metal dichalcogenides (TMD) offer a unique platform for creating van-der-Waals heterojunctions with fascinating physical properties and promising applications in optoelectronics and valleytronics. Because of their typical type-II band alignment, photoexcited electrons and holes can separate via interfacial charge transfer. To understand the nature and the dynamics of this charge transfer is of utmost importance for the design and efficiency of potential devices. However, systematic studies concerning the influence of the stacking angle on the charge transfer remain sparse. Here, we apply time- and polarization resolved second-harmonic imaging microscopy to investigate the charge-transfer dynamics for three MoS$_2$/WSe$_2$ heterostructures with different stacking angles at a previously unattainable time-resolution of $\approx$ 6 fs. For 1.70 eV excitation energy, electron transfer from WSe$_2$ to MoS$_2$ is found to depend considerably on the stacking angle with the fastest transfer time observed to be as short as 12 fs. At 1.85 eV excitation energy, ultrafast hole transfer from MoS$_2$ to hybridized states at the $Γ$-point or to the K-points of WSe$_2$ has to be considered. Surprisingly, the corresponding decay dynamics show only a minor stacking-angle dependence indicating that radiative recombination of indirect $Γ$-K excitons becomes the dominant decay route for all samples.
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Submitted 12 May, 2021;
originally announced May 2021.
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Tip-Induced $β$-Hydrogen Dissociation in an Alkyl Group Bound on Si(001)
Authors:
A. Adamkiewicz,
T. Bohamud,
M. Reutzel,
U. Höfer,
M. Dürr
Abstract:
Atomic-scale chemical modification of surface-adsorbed ethyl groups on Si(001) was induced and studied by means of scanning tunneling microscopy. Tunneling at sample bias > +1.5V leads to tip-induced C-H cleavage of a $β$-hydrogen of the covalently bound ethyl configuration. The reaction is characterized by the formation of an additional Si-H and a Si-C bond. The reaction probability shows a linea…
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Atomic-scale chemical modification of surface-adsorbed ethyl groups on Si(001) was induced and studied by means of scanning tunneling microscopy. Tunneling at sample bias > +1.5V leads to tip-induced C-H cleavage of a $β$-hydrogen of the covalently bound ethyl configuration. The reaction is characterized by the formation of an additional Si-H and a Si-C bond. The reaction probability shows a linear dependence on the tunneling current at 300 K; the reaction is largely suppressed at 50 K. The observed tip-induced surface reaction at room temperature is thus attributed to a one-electron excitation in combination with thermal activation.
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Submitted 30 March, 2021;
originally announced March 2021.
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Momentum-resolved observation of exciton formation dynamics in monolayer WS$_2$
Authors:
Robert Wallauer,
Raul Perea-Causin,
Lasse Münster,
Sarah Zajusch,
Samuel Brem,
Jens Güdde,
Katsumi Tanimura,
Kaiqiang Lin,
Rupert Huber,
Ermin Malic,
Ulrich Höfer
Abstract:
The dynamics of exciton formation in transition metal dichalcogenides is difficult to measure experimentally, since many momentum-indirect exciton states are not accessible to optical interband spectroscopy. Here, we combine a tuneable pump, high-harmonic probe laser source with a 3D momentum imaging technique to map photoemitted electrons from monolayer WS$_2$. This provides momentum-, energy- an…
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The dynamics of exciton formation in transition metal dichalcogenides is difficult to measure experimentally, since many momentum-indirect exciton states are not accessible to optical interband spectroscopy. Here, we combine a tuneable pump, high-harmonic probe laser source with a 3D momentum imaging technique to map photoemitted electrons from monolayer WS$_2$. This provides momentum-, energy- and time-resolved access to excited states on an ultrafast timescale. The high temporal resolution of the setup allows us to trace the early-stage exciton dynamics on its intrinsic timescale and observe the formation of a momentum-forbidden dark K$Σ$ exciton a few tens of femtoseconds after optical excitation. By tuning the excitation energy we manipulate the temporal evolution of the coherent excitonic polarization and observe its influence on the dark exciton formation. The experimental results are in excellent agreement with a fully microscopic theory, resolving the temporal and spectral dynamics of bright and dark excitons in WS$_2$.
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Submitted 28 May, 2021; v1 submitted 21 December, 2020;
originally announced December 2020.
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Ultrafast dynamics of photocurrents in surface states of 3D topological insulators
Authors:
Jens Güdde,
Ulrich Höfer
Abstract:
This article reviews experimental work on the ultrafast electron dynamics in the topological surface state (TSS) of three-dimensional (3D) topological insulators (TIs) observed with time- and angle-resolved two-photon photoemission (2PPE). The focus is laid on the generation of ultrafast photocurrents and the time-resolved observation of their decay. 2PPE not only allow to unambiguously relate the…
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This article reviews experimental work on the ultrafast electron dynamics in the topological surface state (TSS) of three-dimensional (3D) topological insulators (TIs) observed with time- and angle-resolved two-photon photoemission (2PPE). The focus is laid on the generation of ultrafast photocurrents and the time-resolved observation of their decay. 2PPE not only allow to unambiguously relate the photocurrents to the spin-polarized electronic surface states. Probing of the asymmetric momentum distribution of the electrons carrying the current makes it possible to study the microscopic scattering processes that governs the unusual electron transport in the time domain. Ultrashort mid-infrared pump pulses permit not only a direct optical excitation of the TSS in Sb$_2$Te$_3$ but also lead to a strong asymmetry of the TSS population in momentum space. Two-dimensional band map** of the TSS shows that this asymmetry is in fact representative for a macroscopic photocurrent while the helicity-dependence of the photocurrent is found to be small. The time-resolved observation of the photocurrent decay reveals a huge mean free path of the electrons in the TSS.
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Submitted 8 December, 2020; v1 submitted 27 October, 2020;
originally announced October 2020.
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Tracing orbital images on ultrafast time scales
Authors:
Robert Wallauer,
Miriam Raths,
Klaus Stallberg,
Lasse Münster,
Dominik Brandstetter,
Xiaosheng Yang,
Jens Güdde,
Peter Puschnig,
Serguei Soubatch,
Christian Kumpf,
Francois C. Bocquet,
Frank Stefan Tautz,
Ulrich Höfer
Abstract:
Frontier orbitals, i.e., the highest occupied and lowest unoccupied orbitals of a molecule, generally determine molecular properties, such as chemical bonding and reactivities. Consequently, there has been a lot of interest in measuring them, despite the fact that, strictly speaking, they are not quantum-mechanical observables. Yet, with photoemission tomography a powerful technique has recently b…
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Frontier orbitals, i.e., the highest occupied and lowest unoccupied orbitals of a molecule, generally determine molecular properties, such as chemical bonding and reactivities. Consequently, there has been a lot of interest in measuring them, despite the fact that, strictly speaking, they are not quantum-mechanical observables. Yet, with photoemission tomography a powerful technique has recently been introduced by which the electron distribution in orbitals of molecules adsorbed at surfaces can be imaged in momentum space. This has even been used for the identification of reaction intermediates in surface reactions. However, so far it has been impossible to follow an orbital's momentum-space dynamics in time, for example through an excitation process or a chemical reaction. Here, we report a key step in this direction: we combine time-resolved photoemission employing high laser harmonics and a recently developed momentum microscope to establish a tomographic, femtosecond pump-probe experiment of unoccupied molecular orbitals. Specifically, we measure the full momentum-space distribution of transiently excited electrons. Because in molecules this momentum-space distribution is closely linked to orbital shapes, our experiment offers the extraordinary possibility to observe ultrafast electron motion in time and space. This enables us to connect their excited states dynamics to specific real-space excitation pathways.
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Submitted 6 October, 2020;
originally announced October 2020.
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Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(001) heterointerfaces
Authors:
Kunie Ishioka,
Andreas Beyer,
Wolfgang Stolz,
Kerstin Volz,
Hrvoje Petek,
Ulrich Höfer,
Christopher J. Stanton
Abstract:
Thin GaP films can be grown on an exact Si(001) substrate with nearly perfect lattice match. We perform all-optical pump-probe measurements to investigate the ultrafast electron-phonon coupling at the buried interface of GaP/Si. Above-bandgap excitation with a femtosecond laser pulse can induce coherent longitudinal optical (LO) phonons both in the GaP opverlayer and in the Si substrate. The coupl…
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Thin GaP films can be grown on an exact Si(001) substrate with nearly perfect lattice match. We perform all-optical pump-probe measurements to investigate the ultrafast electron-phonon coupling at the buried interface of GaP/Si. Above-bandgap excitation with a femtosecond laser pulse can induce coherent longitudinal optical (LO) phonons both in the GaP opverlayer and in the Si substrate. The coupling of the GaP LO phonons with photoexcited plasma is reduced significantly with decreasing the GaP layer thickness from 56 to 16 nm due to the quasi-two-dimensional confinement of the plasma. The same laser pulse can also generate coherent longitudinal acoustic (LA) phonons in the form of a strain pulse. The strain induces not only a periodic modulation in the optical reflectivity as they propagate in the semiconductors, but also a sharp spike when it arrives at the GaP layer boundaries. The acoustic pulse induced at the GaP/Si interface is remarkably stronger than that at the Si surface, suggesting a possible application of the GaP/Si heterostructure as an opto-acoustic transducer. The amplitude and the phase of the reflectivity modulation varies with the GaP layer thickness, which can be understood in terms of the interference caused by the multiple acoustic pulses generated at the top surface and at the buried interface.
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Submitted 25 October, 2018;
originally announced October 2018.
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Perturbation of Exciton Aggregate Coupling by Optical Excitation in Crystalline Perfluoropentacene Films
Authors:
K. Kolata,
S. Marquardt,
N. W. Rosemann,
A. Mager,
A. Hansmann,
U. Höfer,
R. Berger,
T. Breuer,
G. Witte,
S. Chatterjee
Abstract:
Carrier multiplication by singlet exciton fission enhances photovoltaic conversion efficiencies in organic solids. This decay of one singlet exciton into two triplet states promises to overcome the Shockley-Queisser limit as up to two electrons may be harvested per absorbed photon. Intermolecular coupling is deemed mandatory for both, singlet exciton fission and a band-like transport. Such a coupl…
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Carrier multiplication by singlet exciton fission enhances photovoltaic conversion efficiencies in organic solids. This decay of one singlet exciton into two triplet states promises to overcome the Shockley-Queisser limit as up to two electrons may be harvested per absorbed photon. Intermolecular coupling is deemed mandatory for both, singlet exciton fission and a band-like transport. Such a coupling is manifested, $e.g.$, by the Davydov-splitting of the lowest-energy exciton transition in crystalline organic solids. For the model system perfluoropentacene, the corresponding transitions in the experimental, polarisation-resolved absorption spectra are identified by theoretical calculations based on the concept of H- and J- aggregation. Optical injection into the first vibronic progression of the fundamental exciton transitions significantly perturbs the higher-energy transitions that are associated to H-type aggregates of the $S_0 \rightarrow S_3$ transition during and following efficient singlet exciton fission. These findings underline the necessity for efficient carrier extraction as triplet accumulation may be detrimental to both, singlet exciton fission and any potentially band like transport. More generally, our observations indicate that electronic excitations can perturb the electronic band structure in organic crystals and highlight their correlated nature by potentially distorting the lattice.
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Submitted 15 December, 2016;
originally announced December 2016.
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Sub-picosecond acoustic pulses at buried GaP/Si interfaces
Authors:
Kunie Ishioka,
Avinash Rustagi,
Andreas Beyer,
Wolfgang Stolz,
Kerstin Volz,
Ulrich Hoefer,
Hrvoje Petek,
Christopher J. Stanton
Abstract:
We report on the optical generation and detection of ultrashort acoustic pulses that propagate in three-dimensional semiconductor crystals. Photoexcitaiton of lattice-matched GaP layers grown on Si(001) gives rise to a sharp spike in transient reflectivity due to the acoustic pulse generated at the GaP/Si interface and detected at the GaP surface and vice versa. The extremely short width of the re…
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We report on the optical generation and detection of ultrashort acoustic pulses that propagate in three-dimensional semiconductor crystals. Photoexcitaiton of lattice-matched GaP layers grown on Si(001) gives rise to a sharp spike in transient reflectivity due to the acoustic pulse generated at the GaP/Si interface and detected at the GaP surface and vice versa. The extremely short width of the reflectivity spike, 0.5 ps, would translate to a spatial extent of 3 nm or 10 atomic bilayers, which is comparable with the width of the intermixing layer at the GaP/Si interface. The reflectivity signals are also modified by quasi-periodic Brillouin oscillations of GaP and Si arising from the acoustic pulses during the propagation in the crystals. The present results demonstrate the potential application of the simple optical pump-probe scheme in the nondestructive evaluation of the buried semiconductor interface quality.
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Submitted 27 July, 2017; v1 submitted 4 December, 2016;
originally announced December 2016.
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Ultrafast Energy- and Momentum-resolved Surface Dirac Photocurrents in the Topological Insulator Sb$_2$Te$_3$
Authors:
Kenta Kuroda,
J. Reimann,
K. A. Kokh,
O. E. Tereshchenko,
A. Kimura,
J. Güdde,
U. Höfer
Abstract:
We present energy-momentum map** of surface Dirac photocurrent in the topological insulator Sb$_2$Te$_3$ by means of time- and angle-resolved two-photon photoemission spectroscopy combined with polarization-variable mid-infrared pulse laser. It is demonstrated that the direct optical transition from the occupied to the unoccupied part of the surface Dirac-cone permits the linear and circular pho…
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We present energy-momentum map** of surface Dirac photocurrent in the topological insulator Sb$_2$Te$_3$ by means of time- and angle-resolved two-photon photoemission spectroscopy combined with polarization-variable mid-infrared pulse laser. It is demonstrated that the direct optical transition from the occupied to the unoccupied part of the surface Dirac-cone permits the linear and circular photogalvanic effect which thereby enables us to coherently control the surface electric-current by laser polarization. Moreover, the surface current map** directly visualizes ultrafast current dynamics in the Dirac cone in the time domain. We unravel the ultrafast intraband relaxation dynamics of the inelastic scattering and momentum scattering separately. Our observations pave the pathway for coherent optical control over surface Dirac electrons in topological insulators.
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Submitted 13 November, 2016;
originally announced November 2016.
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Direct Characterization of Band Bending in GaP/Si(001) Heterostructures with Hard X-ray Photoelectron Spectroscopy
Authors:
Martin Schmid,
Kunie Ishioka,
Andreas Beyer,
Benedikt P. Klein,
Claudio K. Krug,
Malte Sachs,
Hrvoje Petek,
Christopher J. Stanton,
Wolfgang Stolz,
Kerstin Volz,
J. Michael Gottfried,
Ulrich Höfer
Abstract:
We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. Depth profiles of the local binding energies for the core levels are obtained by measuring the photoemission spectra at different incident photon energies between 3 and 7 keV and analyzing them with simple numerical model…
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We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. Depth profiles of the local binding energies for the core levels are obtained by measuring the photoemission spectra at different incident photon energies between 3 and 7 keV and analyzing them with simple numerical models. The obtained depth profiles are in quantitative agreement with the band bending determinations for the same samples in a previous coherent phonon spectroscopic study. Our results demonstrate the applicability of the HAXPES with varying incident photon energy to characterize the electric potential profiles at buried semiconductor heterointerfaces.
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Submitted 11 November, 2016;
originally announced November 2016.
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Second-harmonic generation as probe for structural and electronic properties of buried GaP/Si(001) interfaces
Authors:
K. Brixius,
A. Beyer,
J. Güdde,
M. Dürr,
W. Stolz,
K. Volz,
U. Höfer
Abstract:
Optical second-harmonic generation is demonstrated to be a sensitive probe of the buried interface between the lattice matched semiconductors gallium phosphide and silicon with (001) orientation. Rotational anisotropy measurements of SHG from GaP/Si show a strong isotropic component of the response not present for pure Si(001) or GaP(001). The strength of the overlaying anisotropic response direct…
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Optical second-harmonic generation is demonstrated to be a sensitive probe of the buried interface between the lattice matched semiconductors gallium phosphide and silicon with (001) orientation. Rotational anisotropy measurements of SHG from GaP/Si show a strong isotropic component of the response not present for pure Si(001) or GaP(001). The strength of the overlaying anisotropic response directly correlates with the quality of the interface as determined by atomically resolved scanning transmission electron microscopy.Optical second-harmonic generation is demonstrated to be a sensitive probe of the buried interface between the lattice matched semiconductors gallium phosphide and silicon with (001) orientation. Rotational anisotropy measurements of SHG from GaP/Si show a strong isotropic component of the response not present for pure Si(001) or GaP(001). The strength of the overlaying anisotropic response directly correlates with the quality of the interface as determined by atomically resolved scanning transmission electron microscopy. Systematic comparison of samples fabricated with different growth modes in metal organic vapor phase epitaxy reveals that the anisotropy for different polarization combinations can be used as a selective fingerprint for the occurrence of anti-phase domains and twins. This all-optical technique can be applied as an {\it in-situ} and non-invasive monitor even during growth. Systematic comparison of samples fabricated with different growth modes in metal organic vapor phase epitaxy reveals that the anisotropy for different polarization combinations can be used as a selective fingerprint for the occurrence of anti-phase domains and twins. This all-optical technique can be applied as an {\it in-situ} and non-invasive monitor even during growth.
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Submitted 31 October, 2018; v1 submitted 4 November, 2016;
originally announced November 2016.
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Model potential for the description of metal/organic interface states
Authors:
N. Armbrust,
F. Schiller,
J. Güdde,
U. Höfer
Abstract:
We present an analytical one-dimensional model potential for the description of electronic interface states that form at the interface between a metal surface and flat-lying adlayers of $π$-conjugated organic molecules. The model utilizes graphene as a universal representation of these organic adlayers. It predicts the energy position of the interface state as well as the overlap of its wave funct…
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We present an analytical one-dimensional model potential for the description of electronic interface states that form at the interface between a metal surface and flat-lying adlayers of $π$-conjugated organic molecules. The model utilizes graphene as a universal representation of these organic adlayers. It predicts the energy position of the interface state as well as the overlap of its wave function with the bulk metal without free fitting parameters. We show that the interface state's energy depends systematically on the bond distance between the carbon backbone of the adayers and the metal. The general applicability and robustness of the model is demonstrated by a comparison of the calculated energies with numerous experimental results for a number of flat-lying organic molecules on different closed-packed metal surfaces that cover a large range of bond distances.
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Submitted 26 October, 2016;
originally announced October 2016.
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Chemoselective Reactivity of Bifunctional Cyclooctynes on Si(001)
Authors:
Marcel Reutzel,
Niels Münster,
Marcus A. Lipponer,
Christian Länger,
Ulrich Höfer,
Ulrich Koert,
Michael Dürr
Abstract:
Controlled organic functionalization of silicon surfaces as integral part of semiconductor technology offers new perspectives for a wide range of applications. The high reactivity of the silicon dangling bonds, however, presents a major hindrance for the first basic reaction step of such a functionalization, i.e., the chemoselective attachment of bifunctional organic molecules on the pristine sili…
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Controlled organic functionalization of silicon surfaces as integral part of semiconductor technology offers new perspectives for a wide range of applications. The high reactivity of the silicon dangling bonds, however, presents a major hindrance for the first basic reaction step of such a functionalization, i.e., the chemoselective attachment of bifunctional organic molecules on the pristine silicon surface. We overcome this problem by employing cyclooctyne as the major building block of our strategy. Functionalized cyclooctynes are shown to react on Si(001) selectively via the strained cyclooctyne triple bond while leaving the side groups intact. The achieved selectivity originates from the distinctly different adsorption dynamics of the separate functionalities: A direct adsorption pathway is demonstrated for cyclooctyne as opposed to the vast majority of other organic functional groups. The latter ones react on Si(001) via a metastable intermediate which makes them effectively unreactive in competition with the direct pathway of cyclooctyne's strained triple bond.
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Submitted 2 September, 2016;
originally announced September 2016.
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Second-harmonic imaging microscopy for time-resolved investigations of transition metal dichalcogenides
Authors:
J. E. Zimmermann,
B. Li,
J. Hone,
U. Höfer,
G. Mette
Abstract:
Two-dimensional transition metal dichalcogenides (TMDC) have shown promise for various applications in optoelectronics and so-called valleytronics. Their operation and performance strongly depend on the stacking of individual layers. Here, optical second-harmonic generation (SHG) in imaging mode is shown to be a versatile tool for systematic time-resolved investigations of TMDC monolayers and hete…
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Two-dimensional transition metal dichalcogenides (TMDC) have shown promise for various applications in optoelectronics and so-called valleytronics. Their operation and performance strongly depend on the stacking of individual layers. Here, optical second-harmonic generation (SHG) in imaging mode is shown to be a versatile tool for systematic time-resolved investigations of TMDC monolayers and heterostructures in consideration of the material's structure. Large sample areas can be probed without the need of any map** or scanning. By means of polarization dependent measurements, the crystalline orientation of monolayers or the stacking angles of heterostructures can be evaluated for the whole field of view. Pump-probe experiments then allow to correlate observed transient changes of the second-harmonic response with the underlying structure. The corresponding time-resolution is virtually limited by the pulse duration of the used laser. As an example, polarization dependent and time-resolved measurements on mono- and multilayer MoS$_2$ flakes grown on a SiO$_2$/Si(001) substrate are presented.
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Submitted 17 April, 2020; v1 submitted 11 August, 2016;
originally announced August 2016.
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Adsorption geometry and the interface states: The relaxed and compressed phases of NTCDA/Ag(111)
Authors:
P. Jakob,
N. L. Zaitsev,
A. Namgalies,
R. Tonner,
I. A. Nechaev,
F. S. Tautz,
U. Höfer,
D. Sanchez-Portal
Abstract:
The theoretical modelling of metal-organic interfaces represents a formidable challenge, especially in consideration of the delicate balance of various interaction mechanisms and the large size of involved molecular species. In the present study, the energies of interface states, which are known to display a high sensitivity to the adsorption geometry and electronic structure of the deposited mole…
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The theoretical modelling of metal-organic interfaces represents a formidable challenge, especially in consideration of the delicate balance of various interaction mechanisms and the large size of involved molecular species. In the present study, the energies of interface states, which are known to display a high sensitivity to the adsorption geometry and electronic structure of the deposited molecular species, have been used to test the suitability and reliability of current theoretical approaches. Two well-ordered overlayer structures (relaxed and compressed monolayer) of NTCDA on Ag(111) have been investigated using two-photon-photoemission to derive precise interface state energies for these closely related systems. The experimental values are reproduced by our DFT calculations using different treatments of dispersion interactions (optB88, PBE-D3) and basis set approaches (localized numerical atomic orbitals, plane waves) with remarkable accuracy. This underlines the trustworthiness regarding the description of geometric and electronic properties.
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Submitted 9 September, 2016; v1 submitted 3 August, 2016;
originally announced August 2016.
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Intrinsic coherent acoustic phonons in indirect band gap semiconductors Si and GaP
Authors:
Kunie Ishioka,
Avinash Rustagi,
Ulrich Hoefer,
Hrvoje Petek,
Christopher J. Stanton
Abstract:
We report on the intrinsic optical generation and detection of coherent acoustic phonons at (001)-oriented bulk Si and GaP without metallic phonon transducer structures. Photoexcitation by a 3.1-eV laser pulse generates a normal strain pulse within the $\sim$100-nm penetration depth in both semiconductors. The subsequent propagation of the strain pulse into the bulk is detected with a delayed opti…
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We report on the intrinsic optical generation and detection of coherent acoustic phonons at (001)-oriented bulk Si and GaP without metallic phonon transducer structures. Photoexcitation by a 3.1-eV laser pulse generates a normal strain pulse within the $\sim$100-nm penetration depth in both semiconductors. The subsequent propagation of the strain pulse into the bulk is detected with a delayed optical probe as a periodic modulation of the optical reflectivity. Our theoretical model explains quantitatively the generation of the acoustic pulse via the deformation potential electron-phonon coupling and detection in terms of the spatially and temporally dependent photoelastic effect for both semiconductors. Comparison with our theoretical model reveals that the experimental strain pulses have finite build-up times of 1.2 and 0.4 ps for GaP and Si, which are comparable with the time required for the photoexcited electrons to transfer to the lowest X valley through intervalley scattering. The deformation potential coupling related to the acoustic pulse generation for GaP is estimated to be twice as strong as that for Si from our experiments, in agreement with a previous theoretical prediction.
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Submitted 27 July, 2017; v1 submitted 2 August, 2016;
originally announced August 2016.
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Intervalley scattering in MoS$_2$ imaged by two-photon photoemission with a high-harmonic probe
Authors:
Robert Wallauer,
Johannes Reimann,
Nico Armbrust,
Jens Güdde,
Ulrich Höfer
Abstract:
We report on the direct map** of electron transfer in the momentum space of bulk MoS$_2$ by means of time- and angle-resolved two-photon photoemission with a high-harmonic probe. For this purpose, we have combined a high-repetition rate high-harmonic source with tunable femtosecond pump pulses and a 3D ($k_x, k_y, E$) electron spectrometer. We show that optical excitation slightly above the A ex…
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We report on the direct map** of electron transfer in the momentum space of bulk MoS$_2$ by means of time- and angle-resolved two-photon photoemission with a high-harmonic probe. For this purpose, we have combined a high-repetition rate high-harmonic source with tunable femtosecond pump pulses and a 3D ($k_x, k_y, E$) electron spectrometer. We show that optical excitation slightly above the A exciton resonance results in an immediate occupation of the conduction band at $\overline{K}$ followed by an ultrafast transfer ($< 50$~fs) to the conduction band minimum at $\overlineΣ$. Both signals, at $\overline{K}$ and $\overlineΣ$, do not vanish over the observed period of 400~fs. The technique described here enables direct access to the charge transfer dynamics in $k$-space and allows the study of decay times and decay channels in various systems with dependence on the excess energy or helicity of the excitation.
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Submitted 13 October, 2016; v1 submitted 18 July, 2016;
originally announced July 2016.
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Adsorption geometry and electronic properties of flat-lying monolayers of tetracene on the Ag(111) surface
Authors:
N. L. Zaitsev,
I. A. Nechaev,
U. Höfer,
E. V. Chulkov
Abstract:
The geometrical and electronic properties of the monolayer (ML) of tetracene (Tc) molecules on Ag(111) are systematically investigated by means of DFT calculations with the use of localized basis set. The bridge and hollow adsorption positions of the molecule in the commensurate $γ$-Tc/Ag(111) are revealed to be the most stable and equally favorable irrespective to the approximation chosen for the…
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The geometrical and electronic properties of the monolayer (ML) of tetracene (Tc) molecules on Ag(111) are systematically investigated by means of DFT calculations with the use of localized basis set. The bridge and hollow adsorption positions of the molecule in the commensurate $γ$-Tc/Ag(111) are revealed to be the most stable and equally favorable irrespective to the approximation chosen for the exchange-correlation functional. The binding energy is entirely determined by the long-range dispersive interaction. The former lowest unoccupied orbital remains being unoccupied in the case of $γ$-Tc/Ag(111) as well as in the $α$-phase with increased coverage. The unit cell of the $α$-phase with point-on-line registry was adapted for calculations based on the available experimental data and the computed structures of the $γ$-phase. The calculated position of the Tc/Ag(111) interface state is found to be noticeably dependent on the lattice constant of the substrate, however its energy shift with respect to the Shockley surface state of the unperturbed clean side of the slab is sensitive only to the adsorption distance and in good agreement with the experimentally measured energy shift.
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Submitted 25 May, 2016;
originally announced May 2016.
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Spectroscopy and Dynamics of a Two-Dimensional Electron Gas on top of Ultrathin Helium Films on Cu(111)
Authors:
Nico Armbrust,
Jens Güdde,
Ulrich Höfer,
Sarah Kossler,
Peter Feulner
Abstract:
Electrons in image-potential states on the surface of bulk helium represent a unique model system of a two-dimensional electron gas. Here, we investigate their properties in the extreme case of reduced film thickness: a monolayer of helium physisorbed on a single-crystalline (111)-oriented Cu surface. For this purpose we have utilized a customized setup for time-resolved two-photon photoemission (…
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Electrons in image-potential states on the surface of bulk helium represent a unique model system of a two-dimensional electron gas. Here, we investigate their properties in the extreme case of reduced film thickness: a monolayer of helium physisorbed on a single-crystalline (111)-oriented Cu surface. For this purpose we have utilized a customized setup for time-resolved two-photon photoemission (2PPE) at very low temperatures under ultra-high vacuum conditions. We demonstrate that the highly polarizable metal substrate increases the binding energy of the first (n = 1) image-potential state by more than two orders of magnitude as compared to the surface of liquid helium. An electron in this state is still strongly decoupled from the metal surface due to the large negative electron affinity of helium and we find that even one monolayer of helium increases its lifetime by one order of magnitude compared to the bare Cu(111) surface.
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Submitted 25 May, 2016;
originally announced May 2016.
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Generation of Transient Photocurrents in the Topological Surface State of Sb$_{2}$Te$_{3}$ by Direct Optical Excitation with Mid-Infrared Pulses
Authors:
K. Kuroda,
J. Reimann,
J. Güdde,
U. Höfer
Abstract:
We combine tunable mid-infrared (MIR) pump pulses with time- and angle-resolved two-photon photoemission to study ultrafast photoexcitation of the topological surface state (TSS) of Sb$_{2}$Te$_{3}$. It is revealed that MIR pulses permit a direct excitation of the unoccupied TSS owing to an optical coupling across the Dirac point. The novel optical coupling provokes asymmetric transient population…
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We combine tunable mid-infrared (MIR) pump pulses with time- and angle-resolved two-photon photoemission to study ultrafast photoexcitation of the topological surface state (TSS) of Sb$_{2}$Te$_{3}$. It is revealed that MIR pulses permit a direct excitation of the unoccupied TSS owing to an optical coupling across the Dirac point. The novel optical coupling provokes asymmetric transient populations of the TSS at ${\pm}k_{||}$, which mirrors a macroscopic photoexcited electric surface current. By observing the decay of the asymmetric population, we directly demonstrate the dynamics of the long-lived photocurrent and its protection against backscattering. Our discovery promises important advantages of photoexcitation by MIR pulses for spintronic applications.
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Submitted 26 January, 2016; v1 submitted 2 November, 2015;
originally announced November 2015.
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Inelastic Decay of Electrons in the Shockley-type Metal-Organic Interface States
Authors:
S. S. Tsirkin,
N. L. Zaitsev,
I. A. Nechaev,
R. Tonner,
U. Hoefer,
E. V. Chulkov
Abstract:
We present a theoretical study of lifetimes of interface states (IS) on metal-organic interfaces PTCDA/Ag(111), NTCDA/Ag(111), PFP/Ag(111), and PTCDA/Ag(100), describing and explaining the recent experimental data. By means of unfolding the band structure of one of the interfaces under study onto the Ag(111) Brillouin zone we demonstrate, that the Brillouin zone folding upon organic monolayer depo…
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We present a theoretical study of lifetimes of interface states (IS) on metal-organic interfaces PTCDA/Ag(111), NTCDA/Ag(111), PFP/Ag(111), and PTCDA/Ag(100), describing and explaining the recent experimental data. By means of unfolding the band structure of one of the interfaces under study onto the Ag(111) Brillouin zone we demonstrate, that the Brillouin zone folding upon organic monolayer deposition plays a minor role in the phase space for electron decay, and hence weakly affects the resulting lifetimes. The presence of the unoccupied molecular states below the IS gives a small contribution to the IS decay rate mostly determined by the change of the phase space of bulk states upon the energy shift of the IS. The calculated lifetimes follow the experimentally observed trends. In particular, we explain the trend of the unusual increase of the IS lifetimes with rising temperature.
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Submitted 27 July, 2015;
originally announced July 2015.
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Resolubility of Image-Potential Resonances
Authors:
Ulrich Höfer,
Pedro M. Echenique
Abstract:
A theory of image-potential states is presented for the general case where these surface electronic states are resonant with a bulk continuum. The theory extends the multiple scattering approach of Echenique and Pendry into the strong coupling regime while retaining independence from specific forms of surface and bulk potentials. The theory predicts the existence of a well-resolved series of reson…
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A theory of image-potential states is presented for the general case where these surface electronic states are resonant with a bulk continuum. The theory extends the multiple scattering approach of Echenique and Pendry into the strong coupling regime while retaining independence from specific forms of surface and bulk potentials. The theory predicts the existence of a well-resolved series of resonances for arbitrary coupling strengths. Surprisingly, distinct image-potential resonances are thus expected to exist on almost any metal surface, even in the limiting case of jellium.
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Submitted 14 July, 2015;
originally announced July 2015.
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Formation of image-potential states at the graphene/metal interface
Authors:
N. Armbrust,
J. Güdde,
U. Höfer
Abstract:
The formation of image-potential states at the interface between a graphene layer and a metal surface is studied by means of model calculations. An analytical one-dimensional model-potential for the combined system is constructed and used to calculate energies and wave functions of the image-potential states at the Gamma-point as a function of the graphene-metal distance. It is demonstrated how th…
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The formation of image-potential states at the interface between a graphene layer and a metal surface is studied by means of model calculations. An analytical one-dimensional model-potential for the combined system is constructed and used to calculate energies and wave functions of the image-potential states at the Gamma-point as a function of the graphene-metal distance. It is demonstrated how the double series of image-potential states of free-standing graphene evolves into interfacial states that interact with both surfaces at intermediate distances and finally into a single series of states resembling those of a clean metal surface covered by a monoatomic spacer layer. The model quantitatively reproduces experimental data available for graphene/Ir(111) and graphene/Ru(0001), systems which strongly differ in interaction strength and therefore adsorption distance. Moreover, it provides a clear physical explanation for the different binding energy and lifetime of the first (n=1) image-potential state in the valley and hill areas of the strongly corrugated moire superlattice of graphene/Ru(0001).
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Submitted 25 September, 2015; v1 submitted 10 July, 2015;
originally announced July 2015.
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Energy Shift and Wavefunction Overlap of Metal-Organic Interface-States
Authors:
M. Marks,
N. L. Zaitsev,
B. Schmidt,
C. H. Schwalb,
A. Schöll,
I. A. Nechaev,
P. M. Echenique,
E. V. Chulkov,
U. Höfer
Abstract:
The properties of Shockley-type interface states between $π$-conjugated organic molecular layers and metal surfaces are investigated by time-resolved two-photon photoemission experiments and density functional theory. For perylene- and naphthalene-tetracarboxylic acid dianhydride (PTCDA and NTCDA) adsorbed on Ag(111), a common mechanism of formation of the interface state from the partly occupied…
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The properties of Shockley-type interface states between $π$-conjugated organic molecular layers and metal surfaces are investigated by time-resolved two-photon photoemission experiments and density functional theory. For perylene- and naphthalene-tetracarboxylic acid dianhydride (PTCDA and NTCDA) adsorbed on Ag(111), a common mechanism of formation of the interface state from the partly occupied surface state of the bare Ag(111) is revealed. The energy position is found to be strongly dependent on the distance of the molecular carbon rings from the metal and their surface density. Bending of the carboxyl groups enhances the molecular overlap of the interface state.
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Submitted 19 July, 2011;
originally announced July 2011.
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Highly site-specific H2 adsorption on vicinal Si(001) surfaces
Authors:
P. Kratzer,
E. Pehlke,
M. Scheffler,
M. B. Raschke,
U. Hofer
Abstract:
Experimental and theoretical results for the dissociative adsorption of H_2 on vicinal Si(001) surfaces are presented. Using optical second-harmonic generation, sticking probabilities at the step sites are found to exceed those on the terraces by up to six orders of magnitude. Density functional theory calculations indicate the presence of direct adsorption pathways for monohydride formation but…
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Experimental and theoretical results for the dissociative adsorption of H_2 on vicinal Si(001) surfaces are presented. Using optical second-harmonic generation, sticking probabilities at the step sites are found to exceed those on the terraces by up to six orders of magnitude. Density functional theory calculations indicate the presence of direct adsorption pathways for monohydride formation but with a dramatically lowered barrier for step adsorption due to an efficient rehybridization of dangling orbitals.
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Submitted 17 November, 1998;
originally announced November 1998.
