Imaging Localized Variable Capacitance During Switching Processes in Silicon Diodes by Time-Resolved Electron Holography
Authors:
Tolga Wagner,
Hüseyin Çelik,
Dirk Berger,
Ines Häusler,
Michael Lehmann
Abstract:
Interference Gating or iGate is a unique method for ultrafast time-resolved electron holography in a transmission electron microscope enabling a spatiotemporal resolution in the nm and ns regime with a minimal technological effort. Here, iGate is used for the first image-based investigation of the local dynamics of the projected electric potential in the area of the space charge region of two diff…
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Interference Gating or iGate is a unique method for ultrafast time-resolved electron holography in a transmission electron microscope enabling a spatiotemporal resolution in the nm and ns regime with a minimal technological effort. Here, iGate is used for the first image-based investigation of the local dynamics of the projected electric potential in the area of the space charge region of two different general purpose silicon diodes during switching between unbiased and reverse biased condition with a temporal resolution of 25ns at a repetition rate of 3MHz. The obtained results for a focus-ion-beam-prepared ultrafast UG1A rectifier diode, which shows a decreasing capacitance with increasing reverse bias are in good agreement with an electric characterization of the macroscopic device as well as with theoretical expectations. For a severely modified 1N4007 device, however, time-resolved electron holography revealed a MOSCAP-like behavior with a rising capacitance in the area of the space charge region during the switching into reverse biased condition. Remarkably, a different behavior, dominated by the effective capacitance of the electrical setup, can be observed in the vacuum region outside both devices within the same measurements, clearly showing the benefits of localized dynamic potentiometry.
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Submitted 15 May, 2024; v1 submitted 14 May, 2024;
originally announced May 2024.
Charge-Trap**-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation
Authors:
R. Fontanini,
M. Segatto,
K. S. Nair,
M. Holzer,
F. Driussi,
I. Häusler,
C. T. Koch,
C. Dubourdieu,
V. Deshpande,
D. Esseni
Abstract:
In this work, we present a clear evidence, based on numerical simulations and experiments, that the polarization compensation due to trapped charge strongly influences the ON/ OFF ratio in Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric tunnel junctions (FTJs). Furthermore, we identify and explain compensation conditions that enable an optimal operation of FTJs. Our results provide both key physical i…
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In this work, we present a clear evidence, based on numerical simulations and experiments, that the polarization compensation due to trapped charge strongly influences the ON/ OFF ratio in Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric tunnel junctions (FTJs). Furthermore, we identify and explain compensation conditions that enable an optimal operation of FTJs. Our results provide both key physical insights and design guidelines for the operation of FTJs as multilevel synaptic devices.
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Submitted 4 September, 2023;
originally announced September 2023.
