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Efficient electronic cooling above 2 K by niobium-based superconducting tunnel junctions
Authors:
J. Hätinen,
A. Ronzani,
R. P. Loreto,
E. Mykkänen,
A. Kemppinen,
K. Viisanen,
T. Rantanen,
J. Geisor,
J. Lehtinen,
M. Ribeiro,
J-P. Kaikkonen,
O. Prakash,
V. Vesterinen,
W. Förbom,
E. T. Mannila,
M. Kervinen,
J. Govenius,
M. Prunnila
Abstract:
Numerous applications, from industrial non-destructive imaging through ultra-sensitive photon counting to various implementations of solid-state quantum computers require low temperatures for their sensor and processor chips. Replacing the bulky cryo-liquid based cooling stages of cryo-enabled instruments by chip scale refrigeration is envisioned to disruptively reduce the system size similarly as…
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Numerous applications, from industrial non-destructive imaging through ultra-sensitive photon counting to various implementations of solid-state quantum computers require low temperatures for their sensor and processor chips. Replacing the bulky cryo-liquid based cooling stages of cryo-enabled instruments by chip scale refrigeration is envisioned to disruptively reduce the system size similarly as microprocessors did for computers. Chip scale cooling has been demonstrated with electronic refrigerators based on tunnel junctions in the sub-1 K temperature range. Here, we extend the operation temperature to above 2 K, thereby, bridging the gap between electronic and pulse tube refrigerators. We report on scalable Al-AlOx-Nb superconducting tunnel junction cooler technology that can deliver electronic cooling power of ~ mW/mm^2, which is enough to demonstrate significant electron temperature reduction of 0.82 K against the phonon bath at 2.4 K (34% relative cooling). Our work shows that the key material of integrated superconducting circuits (niobium) enables powerful cryogenic refrigerator technology. This result is a prerequisite for practical cryogenic chip scale refrigerators and, at the same time, it introduces a new electro-thermal tool for quantum heat transport experiments.
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Submitted 13 March, 2024;
originally announced March 2024.
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Thermal resistance in superconducting flip-chip assemblies
Authors:
Joel Hätinen,
Emma Mykkänen,
Klaara Viisanen,
Alberto Ronzani,
Antti Kemppinen,
Lassi Lehtisyrjä,
Janne S. Lehtinen,
Mika Prunnila
Abstract:
Cryogenic microsystems that utilize different 3D integration techniques are being actively developed, e.g., for the needs of quantum technologies. 3D integration can introduce opportunities and challenges to the thermal management of low temperature devices. In this work, we investigate sub-1 K inter-chip thermal resistance of a flip-chip bonded assembly, where two silicon chips are interconnected…
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Cryogenic microsystems that utilize different 3D integration techniques are being actively developed, e.g., for the needs of quantum technologies. 3D integration can introduce opportunities and challenges to the thermal management of low temperature devices. In this work, we investigate sub-1 K inter-chip thermal resistance of a flip-chip bonded assembly, where two silicon chips are interconnected by compression bonding via indium bumps. The total thermal contact area between the chips is 0.306 mm$^2$ and we find that the temperature dependence of the inter-chip thermal resistance follows the power law of $αT^{-3}$, with $α= 7.7-15.4$ K$^4$$μ$m$^2$/nW. The $T^{-3}$ relation indicates phononic interfacial thermal resistance, which is supported by the vanishing contribution of the electrons to the thermal conduction, due to the superconducting interconnections. Such a thermal resistance value can introduce a thermalization bottleneck in particular at cryogenic temperatures. This can be detrimental for some applications, yet it can also be harnessed. We provide an example of both cases by estimating the parasitic overheating of a cryogenic flip-chip assembly operated under various heat loads as well as simulate the performance of solid-state junction microrefrigerators utilizing the observed thermal isolation.
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Submitted 10 October, 2023; v1 submitted 2 March, 2023;
originally announced March 2023.
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Scalable on-chip multiplexing of silicon single and double quantum dots
Authors:
Heorhii Bohuslavskyi,
Alberto Ronzani,
Joel Hätinen,
Arto Rantala,
Andrey Shchepetov,
Panu Koppinen,
Mika Prunnila,
Janne S. Lehtinen
Abstract:
The scalability of the quantum processor technology is elemental factor in reaching fault-tolerant quantum computing. Owing to the maturity of microelectronics, quantum bits (qubits) realized with spins in silicon quantum dots are considered among the most promising technologies for building scalable quantum computers. However, several challenges need to be solved to realize quantum-dot-based quan…
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The scalability of the quantum processor technology is elemental factor in reaching fault-tolerant quantum computing. Owing to the maturity of microelectronics, quantum bits (qubits) realized with spins in silicon quantum dots are considered among the most promising technologies for building scalable quantum computers. However, several challenges need to be solved to realize quantum-dot-based quantum processors. In this respect, ultra-low-power on-chip cryogenic classical complementary metal oxide semiconductor (CMOS) electronics for control, read-out, and interfacing of the qubits is an important milestone. We report scalable interfacing of tunable electron and hole quantum dots embedded in a 64-channel cryogenic multiplexer, which has less-than-detectable static power dissipation. Our integrated hybrid quantum-dot CMOS technology provides a plausible route to scalable interfacing of a large number of quantum dot devices, enabling variability analysis and quantum dot qubit geometry optimization, which are prerequisites for building large-scale silicon-based quantum computers. We analyze charge noise and obtain state-of-the-art addition energies and gate lever arms in electron and hole quantum dots. The demonstrated electrostatically-defined quantum dots and cryogenic transistors with sharp turning-on transfer characteristics, made by harnessing a CMOS process that utilizes a conventional doped-Poly-Si/SiO2/Si MOS stack, constitute a promising platform for spin qubits monolithically integrated with cryo-CMOS electronics.
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Submitted 30 December, 2023; v1 submitted 25 August, 2022;
originally announced August 2022.
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Qubit-compatible substrates with superconducting through-silicon vias
Authors:
K. Grigoras,
N. Yurttagül,
J. -P. Kaikkonen,
E. T. Mannila,
P. Eskelinen,
D. P. Lozano,
H. -X. Li,
M. Rommel,
D. Shiri,
N. Tiencken,
S. Simbierowicz,
A. Ronzani,
J. Hätinen,
D. Datta,
V. Vesterinen,
L. Grönberg,
J. Biznárová,
A. Fadavi Roudsari,
S. Kosen,
A. Osman,
M. Prunnila,
J. Hassel,
J. Bylander,
J. Govenius
Abstract:
We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the ar…
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We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips, and is a first step toward more complex quantum devices with three-dimensional integration.
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Submitted 8 November, 2022; v1 submitted 25 January, 2022;
originally announced January 2022.
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Cascaded superconducting junction refrigerators: optimization and performance limits
Authors:
A. Kemppinen,
A. Ronzani,
E. Mykkänen,
J. Hätinen,
J. S. Lehtinen,
M. Prunnila
Abstract:
We demonstrate highly transparent silicon-vanadium and silicon-aluminum tunnel junctions with relatively low sub-gap leakage current and discuss how a trade-off typically encountered between transparency and leakage affects their refrigeration performance. We theoretically investigate cascaded superconducting tunnel junction refrigerators with two or more refrigeration stages. In particular, we de…
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We demonstrate highly transparent silicon-vanadium and silicon-aluminum tunnel junctions with relatively low sub-gap leakage current and discuss how a trade-off typically encountered between transparency and leakage affects their refrigeration performance. We theoretically investigate cascaded superconducting tunnel junction refrigerators with two or more refrigeration stages. In particular, we develop an approximate method that takes into account self-heating effects but still allows us to optimize the cascade a single stage at a time. We design a cascade consisting of energy-efficient refrigeration stages, which makes cooling of, e.g., quantum devices from above 1 K to below 100 mK a realistic experimental target.
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Submitted 5 August, 2021; v1 submitted 29 September, 2020;
originally announced September 2020.
