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Showing 1–3 of 3 results for author: Guziewicz, M

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  1. Observation of surface states on heavily indium doped SnTe(111), a superconducting topological crystalline insulator

    Authors: C. M. Polley, V. Jovic, T. -Y. Su, M. Saghir, D. Newby Jr., B. Kowalski, R. Jakiela, A. Barcz, M. Guziewicz, T. Balasubramanian, G. Balakrishnan, J. Laverock, K. E. Smith

    Abstract: The topological crystalline insulator tin telluride is known to host superconductivity when doped with indium (Sn$_{1-x}$In$_{x}$Te), and for low indium contents ($x=0.04$) it is known that the topological surface states are preserved. Here we present the growth, characterization and angle resolved photoemission spectroscopy analysis of samples with much heavier In do** (up to $x\approx0.4$), a… ▽ More

    Submitted 18 February, 2016; v1 submitted 16 August, 2015; originally announced August 2015.

    Journal ref: Phys. Rev. B 93, 075132 (2016)

  2. Nanocomposite NiO:Pd hydrogen sensors with sub-ppm detection limit and low operating temperature

    Authors: M. Kandyla, C. Chatzimanolis-Moustakas, M. Guziewicz, M. Kompitsas

    Abstract: We present results on the fabrication of chemiresistive nanocomposite NiO:Pd hydrogen sensors, which are able to detect hydrogen concentrations as low as 300 ppb in air, operating at temperatures in the 115-145 C range. Thin NiO films were deposited by radio frequency magnetron sputtering on silicon and quartz substrates and their structural and morphological properties were characterized. Pd nano… ▽ More

    Submitted 20 January, 2014; originally announced January 2014.

    Journal ref: Materials Letters 119, 51 (2014)

  3. Unidirectional Transmission of Electrons in a Magnetic Field Gradient

    Authors: G. Grabecki, J. Wrobel, K. Fronc, M. Aleszkiewicz, M. Guziewicz, E. Papis, E. Kaminska, A. Piotrowska, H. Shtrikman, T. Dietl

    Abstract: The work presents an experimental demonstration of time-reversal asymmetry of electron states propagating along boundary separating areas with opposite magnetic fields. For this purpose we have fabricated a hybrid ferromagnet-semiconductor device in form of a Hall cross with two ferromagnets deposited on top. The magnets generated two narrow magnetic barriers of opposite polarity in the active H… ▽ More

    Submitted 10 November, 2003; originally announced November 2003.

    Comments: 8 pages, 5 figures, presented at 11th Int. Conf. on Modulated Semiconductor Structures Nara, July 2003. To be published in Physica E

    Journal ref: Physica E 21, 451 (2004).