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Current-driven domain wall dynamics in ferrimagnetic Ni-doped Mn4N films : very large domain wall velocities and reversal of motion direction across the magnetic compensation point
Authors:
Sambit Ghosh,
Taro Komori,
Ali Hallal,
Jose Peña Garcia,
Toshiki Gushi,
Taku Hirose,
Haruka Mitarai,
Hanako Okuno,
Jan Vogel,
Mairbek Chshiev,
Jean-Philippe Attané,
Laurent Vila,
Takashi Suemasu,
Stefania Pizzini
Abstract:
Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow develo** new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride…
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Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow develo** new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride (Mn4-xNixN) films, in which a fine adjustment of the Ni content allows setting the magnetic compensation at room temperature. The reduced magnetization, combined with the large spin polarization of conduction electrons, strongly enhances the STT so that domain wall velocities approaching 3000 m/s can be obtained for Ni compositions close to the compensation point. In addition, a reversal of the domain wall motion direction is observed when the magnetic compensation composition is crossed. This striking feature, related to the change of direction of the spin polarization with respect to that of the net magnetization, is clarified by ab initio band structure calculations.
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Submitted 11 March, 2021; v1 submitted 11 January, 2021;
originally announced January 2021.
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Mn4N ferrimagnetic thin films for sustainable spintronics
Authors:
T. Gushi,
M. Jovičević Klug,
J. Peña Garcia,
H. Okuno,
J. Vogel,
J. P. Attané,
T. Suemasu,
S. Pizzini,
L. Vila
Abstract:
Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxial…
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Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxially on SrTiO3 substrates possess remarkable properties, such as a perpendicular magnetisation, a very high extraordinary Hall angle (2%) and smooth domain walls, at the millimeter scale. Moreover, domain walls can be moved at record speeds by spin polarised currents, in absence of spin-orbit torques. This can be explained by the large efficiency of the adiabatic spin transfer torque, due to the conjunction of a reduced magnetisation and a large spin polarisation. Finally, we show that the application of gate voltages through the SrTiO3 substrates allows modulating the Mn4N coercive field with a large efficiency.
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Submitted 4 March, 2019; v1 submitted 21 January, 2019;
originally announced January 2019.
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Millimeter-sized magnetic domains in perpendicularly magnetized ferrimagnetic Mn4N thin films grown on SrTiO3
Authors:
Toshiki Gushi,
Laurent Vila,
Olivier Fruchart,
Alain Marty,
Stefania Pizzini,
Jan Vogel,
Fumiya Takata,
Akihito Anzai,
Kaoru Toko,
Takashi Suemasu,
Jean-Philippe Attané
Abstract:
The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N(10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001) substrates allows minimizing the misfit, and to obtain an improved crystalline quality, a sharper switching, a full remanence, a high anisotropy and remarkable millime…
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The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N(10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001) substrates allows minimizing the misfit, and to obtain an improved crystalline quality, a sharper switching, a full remanence, a high anisotropy and remarkable millimeter-sized magnetic domains, with straight and smooth domain walls. In a context of rising interest for current-induced domain wall motion in rare
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Submitted 31 October, 2018;
originally announced October 2018.
