Showing 1–39 of 39 results for author: Gupta, K d

Present and Future of AI in Renewable Energy Domain : A Comprehensive Survey

Authors: Abdur Rashid, Parag Biswas, Angona Biswas, MD Abdullah Al Nasim, Kishor Datta Gupta, Roy George

Abstract: Artificial intelligence (AI) has become a crucial instrument for streamlining processes in various industries, including electrical power systems, as a result of recent digitalization. Algorithms for artificial intelligence are data-driven models that are based on statistical learning theory and are used as a tool to take use of the data that the power system and its users generate. Initially, we… ▽ More Artificial intelligence (AI) has become a crucial instrument for streamlining processes in various industries, including electrical power systems, as a result of recent digitalization. Algorithms for artificial intelligence are data-driven models that are based on statistical learning theory and are used as a tool to take use of the data that the power system and its users generate. Initially, we perform a thorough literature analysis of artificial intelligence (AI) applications related to renewable energy (RE). Next, we present a thorough analysis of renewable energy factories and assess their suitability, along with a list of the most widely used and appropriate AI algorithms. Nine AI-based strategies are identified here to assist Renewable Energy (RE) in contemporary power systems. This survey paper comprises an extensive review of the several AI techniques used for renewable energy as well as a methodical analysis of the literature for the study of various intelligent system application domains across different disciplines of renewable energy. This literature review identifies the performance and outcomes of nine different research methods by assessing them, and it aims to distill valuable insights into their strengths and limitations. This study also addressed three main topics: using AI technology for renewable power generation, utilizing AI for renewable energy forecasting, and optimizing energy systems. Additionally, it explored AI's superiority over conventional models in controllability, data handling, cyberattack prevention, smart grid implementation, robotics- AI's significance in sha** the future of the energy industry. Furthermore, this article outlines future directions in the integration of AI for renewable energy. △ Less

Submitted 22 June, 2024; originally announced June 2024.

AI-Driven Approaches for Optimizing Power Consumption: A Comprehensive Survey

Authors: Parag Biswas, Abdur Rashid, Angona Biswas, Md Abdullah Al Nasim, Kishor Datta Gupta, Roy George

Abstract: Reduced environmental effect, lower operating costs, and a stable and sustainable energy supply for current and future generations are the main reasons why power optimization is important. Power optimization makes ensuring that energy is used more effectively, cutting down on waste and optimizing the utilization of resources.In today's world, power optimization and artificial intelligence (AI) int… ▽ More Reduced environmental effect, lower operating costs, and a stable and sustainable energy supply for current and future generations are the main reasons why power optimization is important. Power optimization makes ensuring that energy is used more effectively, cutting down on waste and optimizing the utilization of resources.In today's world, power optimization and artificial intelligence (AI) integration are essential to changing the way energy is produced, used, and distributed. Real-time monitoring and analysis of power usage trends is made possible by AI-driven algorithms and predictive analytics, which enable dynamic modifications to effectively satisfy demand. Efficiency and sustainability are increased when power consumption is optimized in different sectors thanks to the use of intelligent systems. This survey paper comprises an extensive review of the several AI techniques used for power optimization as well as a methodical analysis of the literature for the study of various intelligent system application domains across different disciplines of power consumption.This literature review identifies the performance and outcomes of 17 different research methods by assessing them, and it aims to distill valuable insights into their strengths and limitations. Furthermore, this article outlines future directions in the integration of AI for power consumption optimization. △ Less

Submitted 22 June, 2024; originally announced June 2024.

Gate voltage modulation of the superconducting state in a degenerate semiconductor

Authors: Bikash C. Barik, Himadri Chakraborti, Buddhadeb Pal, Aditya K. Jain, Swagata Bhunia, Sounak Samanta, Apurba Laha, Suddhasatta Mahapatra, K. Das Gupta

Abstract: In this work, we demonstrate that the modulation of carrier density can alter the superconducting transition temperature by up to $204$ mK in epitaxial Indium Nitride on Gallium Nitride, accounting for the $10$% of the transition temperature in ungated conditions. Our samples are likely free from strong localization effects and significant granularity, as indicated by $( k_{f l} \gg 1 )$, suggesti… ▽ More In this work, we demonstrate that the modulation of carrier density can alter the superconducting transition temperature by up to $204$ mK in epitaxial Indium Nitride on Gallium Nitride, accounting for the $10$% of the transition temperature in ungated conditions. Our samples are likely free from strong localization effects and significant granularity, as indicated by $( k_{f l} \gg 1 )$, suggesting that the primary determinant of the transition temperature in InN is carrier density, rather than disorder scattering. The observed behavior is consistent with BCS s-wave superconductivity, corroborated by the superconducting parameters we measured. Furthermore, we observed a $60$% bipolar suppression of the supercurrent in our experiments. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Comments: 6 pages, 5 figures, supplementary material attached. Comments are welcome

Low frequency resistance fluctuations in an ionic liquid gated channel probed by cross-correlation noise spectroscopy

Authors: Bikash C. Barik, Himadri Chakraborti, Aditya K. Jain, Buddhadeb Pal, H. E. Beere, D. A. Ritchie, K. Das Gupta

Abstract: A system in equilibrium keeps ``exploring" nearby states in the phase space and consequently, fluctuations can contain information, that the mean value does not. However, such measurements involve a fairly complex interplay of effects arising in the device and measurement electronics, that are non-trivial to disentangle. In this paper, we briefly analyse some of these issues and show the relevance… ▽ More A system in equilibrium keeps ``exploring" nearby states in the phase space and consequently, fluctuations can contain information, that the mean value does not. However, such measurements involve a fairly complex interplay of effects arising in the device and measurement electronics, that are non-trivial to disentangle. In this paper, we briefly analyse some of these issues and show the relevance of a two-amplifier cross-correlation technique for semiconductors and thin films commonly encountered. We show that by using home-built amplifiers costing less than $10$ USD/piece one can measure spectral densities as low as $\sim 10^{-18}-10^{-19}~ {\rm {V^2}{Hz^{-1}}}$. We apply this method to an ionic liquid gated Ga:ZnO channel and show that the glass transition of the ionic liquid brings about a change in the exponent of the low frequency resistance fluctuations. Our analysis suggests that a log-normal distribution of the Debye relaxation times of the fluctuations and an increased weight of the long timescale relaxations can give a semi-quantitative explanation of the observed change in the exponent. △ Less

Submitted 20 February, 2024; originally announced February 2024.

Comments: 6 pages, 5 figures, supplementary material attached. Comments are welcome

Online learning for X-ray, CT or MRI

Authors: Mosabbir Bhuiyan, MD Abdullah Al Nasim, Sarwar Saif, Dr. Kishor Datta Gupta, Md Jahangir Alam, Sajedul Talukder

Abstract: Medical imaging plays an important role in the medical sector in identifying diseases. X-ray, computed tomography (CT) scans, and magnetic resonance imaging (MRI) are a few examples of medical imaging. Most of the time, these imaging techniques are utilized to examine and diagnose diseases. Medical professionals identify the problem after analyzing the images. However, manual identification can be… ▽ More Medical imaging plays an important role in the medical sector in identifying diseases. X-ray, computed tomography (CT) scans, and magnetic resonance imaging (MRI) are a few examples of medical imaging. Most of the time, these imaging techniques are utilized to examine and diagnose diseases. Medical professionals identify the problem after analyzing the images. However, manual identification can be challenging because the human eye is not always able to recognize complex patterns in an image. Because of this, it is difficult for any professional to recognize a disease with rapidity and accuracy. In recent years, medical professionals have started adopting Computer-Aided Diagnosis (CAD) systems to evaluate medical images. This system can analyze the image and detect the disease very precisely and quickly. However, this system has certain drawbacks in that it needs to be processed before analysis. Medical research is already entered a new era of research which is called Artificial Intelligence (AI). AI can automatically find complex patterns from an image and identify diseases. Methods for medical imaging that uses AI techniques will be covered in this chapter. △ Less

Submitted 10 June, 2023; originally announced June 2023.

Comments: 14 pages, 17 figures, 1 table; Acceptance of the chapter for the Springer book "Data-driven approaches to medical imaging"

Introduction of Medical Imaging Modalities

Authors: S. K. M Shadekul Islam, MD Abdullah Al Nasim, Ismail Hossain, Dr. Md Azim Ullah, Dr. Kishor Datta Gupta, Md Monjur Hossain Bhuiyan

Abstract: The diagnosis and treatment of various diseases had been expedited with the help of medical imaging. Different medical imaging modalities, including X-ray, Computed Tomography (CT), Magnetic Resonance Imaging (MRI), Nuclear Imaging, Ultrasound, Electrical Impedance Tomography (EIT), and Emerging Technologies for in vivo imaging modalities is presented in this chapter, in addition to these modaliti… ▽ More The diagnosis and treatment of various diseases had been expedited with the help of medical imaging. Different medical imaging modalities, including X-ray, Computed Tomography (CT), Magnetic Resonance Imaging (MRI), Nuclear Imaging, Ultrasound, Electrical Impedance Tomography (EIT), and Emerging Technologies for in vivo imaging modalities is presented in this chapter, in addition to these modalities, some advanced techniques such as contrast-enhanced MRI, MR approaches for osteoarthritis, Cardiovascular Imaging, and Medical Imaging data mining and search. Despite its important role and potential effectiveness as a diagnostic tool, reading and interpreting medical images by radiologists is often tedious and difficult due to the large heterogeneity of diseases and the limitation of image quality or resolution. Besides the introduction and discussion of the basic principles, typical clinical applications, advantages, and limitations of each modality used in current clinical practice, this chapter also highlights the importance of emerging technologies in medical imaging and the role of data mining and search aiming to support translational clinical research, improve patient care, and increase the efficiency of the healthcare system. △ Less

Submitted 7 June, 2023; v1 submitted 1 June, 2023; originally announced June 2023.

Comments: 19 pages, 7 figures, 1 table; Acceptance of the chapter for the Springer book "Data-driven approaches to medical imaging"

Case Study-Based Approach of Quantum Machine Learning in Cybersecurity: Quantum Support Vector Machine for Malware Classification and Protection

Authors: Mst Shapna Akter, Hossain Shahriar, Sheikh Iqbal Ahamed, Kishor Datta Gupta, Muhammad Rahman, Atef Mohamed, Mohammad Rahman, Akond Rahman, Fan Wu

Abstract: Quantum machine learning (QML) is an emerging field of research that leverages quantum computing to improve the classical machine learning approach to solve complex real world problems. QML has the potential to address cybersecurity related challenges. Considering the novelty and complex architecture of QML, resources are not yet explicitly available that can pave cybersecurity learners to instill… ▽ More Quantum machine learning (QML) is an emerging field of research that leverages quantum computing to improve the classical machine learning approach to solve complex real world problems. QML has the potential to address cybersecurity related challenges. Considering the novelty and complex architecture of QML, resources are not yet explicitly available that can pave cybersecurity learners to instill efficient knowledge of this emerging technology. In this research, we design and develop QML-based ten learning modules covering various cybersecurity topics by adopting student centering case-study based learning approach. We apply one subtopic of QML on a cybersecurity topic comprised of pre-lab, lab, and post-lab activities towards providing learners with hands-on QML experiences in solving real-world security problems. In order to engage and motivate students in a learning environment that encourages all students to learn, pre-lab offers a brief introduction to both the QML subtopic and cybersecurity problem. In this paper, we utilize quantum support vector machine (QSVM) for malware classification and protection where we use open source Pennylane QML framework on the drebin215 dataset. We demonstrate our QSVM model and achieve an accuracy of 95% in malware classification and protection. We will develop all the modules and introduce them to the cybersecurity community in the coming days. △ Less

Submitted 31 May, 2023; originally announced June 2023.

Transfer learning and Local interpretable model agnostic based visual approach in Monkeypox Disease Detection and Classification: A Deep Learning insights

Authors: Md Manjurul Ahsan, Tareque Abu Abdullah, Md Shahin Ali, Fatematuj Jahora, Md Khairul Islam, Amin G. Alhashim, Kishor Datta Gupta

Abstract: The recent development of Monkeypox disease among various nations poses a global pandemic threat when the world is still fighting Coronavirus Disease-2019 (COVID-19). At its dawn, the slow and steady transmission of Monkeypox disease among individuals needs to be addressed seriously. Over the years, Deep learning (DL) based disease prediction has demonstrated true potential by providing early, che… ▽ More The recent development of Monkeypox disease among various nations poses a global pandemic threat when the world is still fighting Coronavirus Disease-2019 (COVID-19). At its dawn, the slow and steady transmission of Monkeypox disease among individuals needs to be addressed seriously. Over the years, Deep learning (DL) based disease prediction has demonstrated true potential by providing early, cheap, and affordable diagnosis facilities. Considering this opportunity, we have conducted two studies where we modified and tested six distinct deep learning models-VGG16, InceptionResNetV2, ResNet50, ResNet101, MobileNetV2, and VGG19-using transfer learning approaches. Our preliminary computational results show that the proposed modified InceptionResNetV2 and MobileNetV2 models perform best by achieving an accuracy ranging from 93% to 99%. Our findings are reinforced by recent academic work that demonstrates improved performance in constructing multiple disease diagnosis models using transfer learning approaches. Lastly, we further explain our model prediction using Local Interpretable Model-Agnostic Explanations (LIME), which play an essential role in identifying important features that characterize the onset of Monkeypox disease. △ Less

Submitted 14 November, 2022; v1 submitted 1 November, 2022; originally announced November 2022.

Comments: We have removed the picture of the children from Figure 1 as we found it not to be appropriate or necessarily important

Negative Selection Approach to support Formal Verification and Validation of BlackBox Models' Input Constraints

Authors: Abdul-Rauf Nuhu, Kishor Datta Gupta, Wendwosen Bellete Bedada, Mahmoud Nabil, Lydia Asrat Zeleke, Abdollah Homaifar, Edward Tunstel

Abstract: Generating unsafe sub-requirements from a partitioned input space to support verification-guided test cases for formal verification of black-box models is a challenging problem for researchers. The size of the search space makes exhaustive search computationally impractical. This paper investigates a meta-heuristic approach to search for unsafe candidate sub-requirements in partitioned input space… ▽ More Generating unsafe sub-requirements from a partitioned input space to support verification-guided test cases for formal verification of black-box models is a challenging problem for researchers. The size of the search space makes exhaustive search computationally impractical. This paper investigates a meta-heuristic approach to search for unsafe candidate sub-requirements in partitioned input space. We present a Negative Selection Algorithm (NSA) for identifying the candidates' unsafe regions within given safety properties. The Meta-heuristic capability of the NSA algorithm made it possible to estimate vast unsafe regions while validating a subset of these regions. We utilize a parallel execution of partitioned input space to produce safe areas. The NSA based on the prior knowledge of the safe regions is used to identify candidate unsafe region areas and the Marabou framework is then used to validate the NSA results. Our preliminary experimentation and evaluation show that the procedure finds candidate unsafe sub-requirements when validated with the Marabou framework with high precision. △ Less

Submitted 3 September, 2022; originally announced September 2022.

Mitigating shortage of labeled data using clustering-based active learning with diversity exploration

Authors: Xuyang Yan, Shabnam Nazmi, Biniam Gebru, Mohd Anwar, Abdollah Homaifar, Mrinmoy Sarkar, Kishor Datta Gupta

Abstract: In this paper, we proposed a new clustering-based active learning framework, namely Active Learning using a Clustering-based Sampling (ALCS), to address the shortage of labeled data. ALCS employs a density-based clustering approach to explore the cluster structure from the data without requiring exhaustive parameter tuning. A bi-cluster boundary-based sample query procedure is introduced to improv… ▽ More In this paper, we proposed a new clustering-based active learning framework, namely Active Learning using a Clustering-based Sampling (ALCS), to address the shortage of labeled data. ALCS employs a density-based clustering approach to explore the cluster structure from the data without requiring exhaustive parameter tuning. A bi-cluster boundary-based sample query procedure is introduced to improve the learning performance for classifying highly overlapped classes. Additionally, we developed an effective diversity exploration strategy to address the redundancy among queried samples. Our experimental results justified the efficacy of the ALCS approach. △ Less

Submitted 6 July, 2022; originally announced July 2022.

Comments: Accepted by the ICML 2022 Workshop on Adaptive Experimental Design and Active Learning in the Real World

Who is Responsible for Adversarial Defense?

Authors: Kishor Datta Gupta, Dipankar Dasgupta

Abstract: We have seen a surge in research aims toward adversarial attacks and defenses in AI/ML systems. While it is crucial to formulate new attack methods and devise novel defense strategies for robustness, it is also imperative to recognize who is responsible for implementing, validating, and justifying the necessity of these defenses. In particular, which components of the system are vulnerable to what… ▽ More We have seen a surge in research aims toward adversarial attacks and defenses in AI/ML systems. While it is crucial to formulate new attack methods and devise novel defense strategies for robustness, it is also imperative to recognize who is responsible for implementing, validating, and justifying the necessity of these defenses. In particular, which components of the system are vulnerable to what type of adversarial attacks, and the expertise needed to realize the severity of adversarial attacks. Also how to evaluate and address the adversarial challenges in order to recommend defense strategies for different applications. This paper opened a discussion on who should examine and implement the adversarial defenses and the reason behind such efforts. △ Less

Submitted 27 June, 2021; originally announced June 2021.

Comments: Accepted for poster presentation in ICML 2021 workshop "Challenges in Deploying and monitoring Machine Learning Systems"

Negative Selection Algorithm Research and Applications in the last decade: A Review

Authors: Kishor Datta Gupta, Dipankar Dasgupta

Abstract: The Negative selection Algorithm (NSA) is one of the important methods in the field of Immunological Computation (or Artificial Immune Systems). Over the years, some progress was made which turns this algorithm (NSA) into an efficient approach to solve problems in different domain. This review takes into account these signs of progress during the last decade and categorizes those based on differen… ▽ More The Negative selection Algorithm (NSA) is one of the important methods in the field of Immunological Computation (or Artificial Immune Systems). Over the years, some progress was made which turns this algorithm (NSA) into an efficient approach to solve problems in different domain. This review takes into account these signs of progress during the last decade and categorizes those based on different characteristics and performances. Our study shows that NSA's evolution can be labeled in four ways highlighting the most notable NSA variations and their limitations in different application domains. We also present alternative approaches to NSA for comparison and analysis. It is evident that NSA performs better for nonlinear representation than most of the other methods, and it can outperform neural-based models in computation time. We summarize NSA's development and highlight challenges in NSA research in comparison with other similar models. △ Less

Submitted 13 May, 2021; originally announced May 2021.

Comments: Dataset and code: https://github.com/kishordgupta/OCC_DATASET and https://github.com/kishordgupta/pyod

Formation of tungsten carbide by focused ion beam process: A route to high magnetic field resilient patterned superconducting nanostructures

Authors: Himadri Chakraborti, Bhanu P Joshi, Chanchal K. Barman, Aditya K. Jain, Buddhadeb Pal, Bikash C. Barik, Tanmay Maiti, Rüdiger Schott, M. J. N. V. Prasad, S. Dhar, Hridis K. Pal, Aftab Alam, K. Das Gupta

Abstract: A scale for magnetic field resilience of a superconductor is set by the paramagnetic limit. Comparing the condensation energy of the Bardeen-Cooper-Schrieffer (BCS) singlet ground state with the paramagnetically polarised state suggests that for an applied field ${μ_0}H > 1.8~T_c$ (in SI), singlet pairing is not energetically favourable. Materials exceeding or approaching this limit are interestin… ▽ More A scale for magnetic field resilience of a superconductor is set by the paramagnetic limit. Comparing the condensation energy of the Bardeen-Cooper-Schrieffer (BCS) singlet ground state with the paramagnetically polarised state suggests that for an applied field ${μ_0}H > 1.8~T_c$ (in SI), singlet pairing is not energetically favourable. Materials exceeding or approaching this limit are interesting from fundamental and technological perspectives. This may be a potential indicator of triplet superconductivity, Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) pairing and other mechanisms involving topological aspects of surface states, and also allow Cooper pair injection at high magnetic fields. We have analysed the microscopic composition of such a material arising from an unexpected source. A microjet of an organo-metallic gas, $\rm {W[(CO)_6]}$ can be decomposed by gallium ion-beam, leaving behind a track of complex residue of gallium, tungsten and carbon with remarkable superconducting properties, like an upper critical field, $H_{c2} > 10~{\rm T} $, above its paramagnetic limit. We carried out Atomic probe tomography to establish the formation of nano-crystalline tungsten carbide (WC) in the tracks and the absence of free tungsten. Supporting calculations show for Ga distributed on the surface of WC, its s,p-orbitals enhance the density of states near the Fermi energy. The observed variation of $H_{c2}(T)$ does not show features typical of enhancement of critical field due to granularity. Our observations may be significant in the context of some recent theoretical calculation of the band structure of WC and experimental observation of superconductivity in WC-metal interface. △ Less

Submitted 30 March, 2022; v1 submitted 17 March, 2021; originally announced March 2021.

Comments: 6 pages, 3 figures, 59 References

Journal ref: Appl. Phys. Lett. 120, 132601 (2022)

Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs

Authors: A. Shetty, F. Sfigakis, W. Y. Mak, K. Das Gupta, B. Buonacorsi, M. C. Tam, H. S. Kim, I. Farrer, A. F. Croxall, H. E. Beere, A. R. Hamilton, M. Pepper, D. G. Austing, S. A. Studenikin, A. Sachrajda, M. E. Reimer, Z. R. Wasilewski, D. A. Ritchie, J. Baugh

Abstract: Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background i… ▽ More Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility loss, driven by an increase in surface charge density. Biased illuminations performed with positive applied gate voltages result in a mobility gain, whereas those performed with negative applied voltages result in a mobility loss. The magnitude of the mobility gain (loss) weakens with 2DEG depth, and is likely driven by a reduction (increase) in surface charge density. Remarkably, this mobility gain/loss is fully reversible by performing another biased illumination with the appropriate gate voltage, provided both n-type and p-type ohmic contacts are present. Experimental results are modeled with Boltzmann transport theory, and possible mechanisms are discussed. △ Less

Submitted 21 December, 2021; v1 submitted 28 December, 2020; originally announced December 2020.

Comments: 18 pages, 13 figures; one paragraph rephrased on page 8

Study of Different Deep Learning Approach with Explainable AI for Screening Patients with COVID-19 Symptoms: Using CT Scan and Chest X-ray Image Dataset

Authors: Md Manjurul Ahsan, Kishor Datta Gupta, Mohammad Maminur Islam, Sajib Sen, Md. Lutfar Rahman, Mohammad Shakhawat Hossain

Abstract: The outbreak of COVID-19 disease caused more than 100,000 deaths so far in the USA alone. It is necessary to conduct an initial screening of patients with the symptoms of COVID-19 disease to control the spread of the disease. However, it is becoming laborious to conduct the tests with the available testing kits due to the growing number of patients. Some studies proposed CT scan or chest X-ray ima… ▽ More The outbreak of COVID-19 disease caused more than 100,000 deaths so far in the USA alone. It is necessary to conduct an initial screening of patients with the symptoms of COVID-19 disease to control the spread of the disease. However, it is becoming laborious to conduct the tests with the available testing kits due to the growing number of patients. Some studies proposed CT scan or chest X-ray images as an alternative solution. Therefore, it is essential to use every available resource, instead of either a CT scan or chest X-ray to conduct a large number of tests simultaneously. As a result, this study aims to develop a deep learning-based model that can detect COVID-19 patients with better accuracy both on CT scan and chest X-ray image dataset. In this work, eight different deep learning approaches such as VGG16, InceptionResNetV2, ResNet50, DenseNet201, VGG19, MobilenetV2, NasNetMobile, and ResNet15V2 have been tested on two dataset-one dataset includes 400 CT scan images, and another dataset includes 400 chest X-ray images studied. Besides, Local Interpretable Model-agnostic Explanations (LIME) is used to explain the model's interpretability. Using LIME, test results demonstrate that it is conceivable to interpret top features that should have worked to build a trust AI framework to distinguish between patients with COVID-19 symptoms with other patients. △ Less

Submitted 24 July, 2020; originally announced July 2020.

Comments: This is a work in progress, it should not be relied upon without context to guide clinical practice or health-related behavior and should not be reported in news media as established information without consulting multiple experts in the field

CIDMP: Completely Interpretable Detection of Malaria Parasite in Red Blood Cells using Lower-dimensional Feature Space

Authors: Anik Khan, Kishor Datta Gupta, Deepak Venugopal, Nirman Kumar

Abstract: Predicting if red blood cells (RBC) are infected with the malaria parasite is an important problem in Pathology. Recently, supervised machine learning approaches have been used for this problem, and they have had reasonable success. In particular, state-of-the-art methods such as Convolutional Neural Networks automatically extract increasingly complex feature hierarchies from the image pixels. Whi… ▽ More Predicting if red blood cells (RBC) are infected with the malaria parasite is an important problem in Pathology. Recently, supervised machine learning approaches have been used for this problem, and they have had reasonable success. In particular, state-of-the-art methods such as Convolutional Neural Networks automatically extract increasingly complex feature hierarchies from the image pixels. While such generalized automatic feature extraction methods have significantly reduced the burden of feature engineering in many domains, for niche tasks such as the one we consider in this paper, they result in two major problems. First, they use a very large number of features (that may or may not be relevant) and therefore training such models is computationally expensive. Further, more importantly, the large feature-space makes it very hard to interpret which features are truly important for predictions. Thus, a criticism of such methods is that learning algorithms pose opaque black boxes to its users, in this case, medical experts. The recommendation of such algorithms can be understood easily, but the reason for their recommendation is not clear. This is the problem of non-interpretability of the model, and the best-performing algorithms are usually the least interpretable. To address these issues, in this paper, we propose an approach to extract a very small number of aggregated features that are easy to interpret and compute, and empirically show that we obtain high prediction accuracy even with a significantly reduced feature-space. △ Less

Submitted 5 July, 2020; originally announced July 2020.

Comments: Accepted in The 2020 International Joint Conference on Neural Networks (IJCNN 2020) At Glasgow (UK)

Determining Sequence of Image Processing Technique (IPT) to Detect Adversarial Attacks

Authors: Kishor Datta Gupta, Zahid Akhtar, Dipankar Dasgupta

Abstract: Develo** secure machine learning models from adversarial examples is challenging as various methods are continually being developed to generate adversarial attacks. In this work, we propose an evolutionary approach to automatically determine Image Processing Techniques Sequence (IPTS) for detecting malicious inputs. Accordingly, we first used a diverse set of attack methods including adaptive at… ▽ More Develo** secure machine learning models from adversarial examples is challenging as various methods are continually being developed to generate adversarial attacks. In this work, we propose an evolutionary approach to automatically determine Image Processing Techniques Sequence (IPTS) for detecting malicious inputs. Accordingly, we first used a diverse set of attack methods including adaptive attack methods (on our defense) to generate adversarial samples from the clean dataset. A detection framework based on a genetic algorithm (GA) is developed to find the optimal IPTS, where the optimality is estimated by different fitness measures such as Euclidean distance, entropy loss, average histogram, local binary pattern and loss functions. The "image difference" between the original and processed images is used to extract the features, which are then fed to a classification scheme in order to determine whether the input sample is adversarial or clean. This paper described our methodology and performed experiments using multiple data-sets tested with several adversarial attacks. For each attack-type and dataset, it generates unique IPTS. A set of IPTS selected dynamically in testing time which works as a filter for the adversarial attack. Our empirical experiments exhibited promising results indicating the approach can efficiently be used as processing for any AI model. △ Less

Submitted 7 July, 2020; v1 submitted 1 July, 2020; originally announced July 2020.

Journal ref: SN COMPUT. SCI. 2, 383 (2021)

Tunability of electrical and thermoelectrical properties of monolayer MoS$_2$ through oxygen passivation

Authors: Swarup Deb, Pritam Bhattacharyya, Poulab Chakrabarti, Himadri Chakraborti, Kantimay Das Gupta, Alok Shukla, Subhabrata Dhar

Abstract: Electric and thermoelectric properties of strictly monolayer MoS$_2$ films, which are grown using a novel micro-cavity based CVD growth technique, have been studied under diverse environmental and annealing conditions. Resistance of a thermoelectric device that is fabricated on a continuous monolayer MoS$_2$ layer using photolithography technique has been found to reduce by about six orders of mag… ▽ More Electric and thermoelectric properties of strictly monolayer MoS$_2$ films, which are grown using a novel micro-cavity based CVD growth technique, have been studied under diverse environmental and annealing conditions. Resistance of a thermoelectric device that is fabricated on a continuous monolayer MoS$_2$ layer using photolithography technique has been found to reduce by about six orders of magnitudes upon annealing in vacuum at 525 K. Seebeck coefficient of the layer also reduces by almost an order of magnitude upon annealing. When the sample is exposed to oxygen atmosphere, these parameters return to their previous values. In fact, it has been found that the electron concentration, mobility as well as the thermoelectric power of the material can be tuned by controlling the temperature of annealing and oxygen exposure. Once established, these values are maintained as long as the layer is not exposed to oxygen environment. This can offer a unique way to control do** in the material provided an effective encapsulation method is devised. Such control is an important step forward for device application. The effect has been attributed to the passivation of di-sulfur vacancy donors present in the MoS$_2$ film by physisorbed oxygen molecules. Band structural calculations using density functional theory have been carried out, results of which indeed validate this picture. △ Less

Submitted 7 March, 2020; originally announced March 2020.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. Applied 14, 034030 (2020)

A General Approach to Domain Adaptation with Applications in Astronomy

Authors: Ricardo Vilalta, Kinjal Dhar Gupta, Dainis Boumber, Mikhail M. Meskhi

Abstract: The ability to build a model on a source task and subsequently adapt such model on a new target task is a pervasive need in many astronomical applications. The problem is generally known as transfer learning in machine learning, where domain adaptation is a popular scenario. An example is to build a predictive model on spectroscopic data to identify Supernovae IA, while subsequently trying to adap… ▽ More The ability to build a model on a source task and subsequently adapt such model on a new target task is a pervasive need in many astronomical applications. The problem is generally known as transfer learning in machine learning, where domain adaptation is a popular scenario. An example is to build a predictive model on spectroscopic data to identify Supernovae IA, while subsequently trying to adapt such model on photometric data. In this paper we propose a new general approach to domain adaptation that does not rely on the proximity of source and target distributions. Instead we simply assume a strong similarity in model complexity across domains, and use active learning to mitigate the dependency on source examples. Our work leads to a new formulation for the likelihood as a function of empirical error using a theoretical learning bound; the result is a novel map** from generalization error to a likelihood estimation. Results using two real astronomical problems, Supernova Ia classification and identification of Mars landforms, show two main advantages with our approach: increased accuracy performance and substantial savings in computational cost. △ Less

Submitted 20 December, 2018; originally announced December 2018.

Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device

Authors: B. Zheng, A. F. Croxall, J. Waldie, K. Das Gupta, F. Sfigakis, I. Farrer, H. E. Beere, D. A. Ritchie

Abstract: We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. The Coulomb drag resistivity is a direct measure of the strength of the interlayer particle-particle interactions. We explore the strongly interactin… ▽ More We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. The Coulomb drag resistivity is a direct measure of the strength of the interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter $r_s$ up to 14). Our ambipolar device design allows comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions, and also shows the effects of the different effective masses of electrons and holes in GaAs. △ Less

Submitted 3 January, 2016; v1 submitted 27 November, 2015; originally announced November 2015.

Comments: 4 pages, 3 figures

Effect of parameter mismatch on the synchronization of strongly coupled self sustained oscillators

Authors: N. Chakrabarty, A. Jain, Nijil Lal C. K., K. Das Gupta, P. Parmananda

Abstract: In this paper we present an experimental setup and an associated mathematical model to study the synchronization of two self sustained strongly coupled mechanical oscillators (metronomes). The effects of a small detuning in the internal parameters, namely dam** and frequency, have been studied. Our experimental system is a pair of spring wound mechanical metronomes, coupled by placing them on a… ▽ More In this paper we present an experimental setup and an associated mathematical model to study the synchronization of two self sustained strongly coupled mechanical oscillators (metronomes). The effects of a small detuning in the internal parameters, namely dam** and frequency, have been studied. Our experimental system is a pair of spring wound mechanical metronomes, coupled by placing them on a common base, free to move along a horizontal direction. In our system the mass of the oscillating pendula form a significant fraction of the total mass of the system, leading to strong coupling of the oscillators. We modified the internal mechanism of the spring-wound "clockwork" slightly, such that the natural frequency and the internal dam** could be independently tuned. Stable synchronized and anti-synchronized states were observed as the difference in the parameters was varied. We designed a photodiode array based non-contact, non-magnetic position detection system driven by a microcontroller to record the instantaneous angular displacement of each oscillator and the small linear displacement of the base coupling the two. Our results indicate that such a system can be made to stabilize in both in-phase anti-phase synchronized state by tuning the parameter mismatch. Results from both numerical simulations and experimental observations are in qualitative agreement and are both reported in the present work. △ Less

Submitted 8 July, 2014; originally announced July 2014.

Comments: 9 pages, 12 figures

Landau level spin diode in a GaAs two dimensional hole system

Authors: O. Klochan, A. R. Hamilton, K. das Gupta, F. Sfigakis, H. E. Beere, D. A. Ritchie

Abstract: We have fabricated and characterized the Landau level spin diode in GaAs two dimensional hole system. We used the hole Landau level spin diode to probe the hyperfine coupling between the hole and nuclear spins and found no detectable net nuclear polarization, indicating that hole-nuclear spin flip-flop processes are suppressed by at least three orders of magnitude compared to GaAs electron systems… ▽ More We have fabricated and characterized the Landau level spin diode in GaAs two dimensional hole system. We used the hole Landau level spin diode to probe the hyperfine coupling between the hole and nuclear spins and found no detectable net nuclear polarization, indicating that hole-nuclear spin flip-flop processes are suppressed by at least three orders of magnitude compared to GaAs electron systems. △ Less

Submitted 15 June, 2014; originally announced June 2014.

Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

Authors: J. C. H. Chen, D. Q. Wang, O. Klochan, A. P. Micolich, K. Das Gupta, F. Sfigakis, D. A. Ritchie, D. Reuter, A. D. Wieck, A. R. Hamilton

Abstract: We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons (… ▽ More We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons ($μ_\textrm{peak}=4\times10^6\textrm{cm}^2/\textrm{Vs}$) and holes ($μ_\textrm{peak}=0.8\times10^6\textrm{cm}^2/\textrm{Vs}$) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory. △ Less

Submitted 3 April, 2012; originally announced April 2012.

Comments: related papers at http://www.phys.unsw.edu.au/qed

Journal ref: Applied Physics Letters 100, 052101 (2012)

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas

Authors: W. Y. Mak, F. Sfigakis, K. Das Gupta, O. Klochan, H. E. Beere, I. Farrer, J. P. Griffiths, G. A. C. Jones, A. R. Hamilton, D. A. Ritchie

Abstract: We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be… ▽ More We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV). △ Less

Submitted 16 March, 2013; v1 submitted 21 December, 2011; originally announced December 2011.

Comments: 4 pages, 4 figures; added figures, references, equations, and text; results/conclusions otherwise unchanged

Journal ref: Applied Physics Letters 102, 103507 (2013)

Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure

Authors: K. Das Gupta, A. F. Croxall, W. Y. Mak, H. E. Beere, C. A. Nicoll, I. Farrer, F. Sfigakis, D. A. Ritchie

Abstract: Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high densities. A loss of linear gateability is often associated with the highest mobilites, on account of a some residual hop** or parallel conduction in the doped… ▽ More Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high densities. A loss of linear gateability is often associated with the highest mobilites, on account of a some residual hop** or parallel conduction in the doped regions. We have developed a method of using fully undoped GaAs-AlGaAs quantum wells, where densities $\approx{6\times10^{11}\rm{cm}^{-2}}$ can be achieved while maintaining fully linear and non-hysteretic gateability. We use these devices to understand the possible mobility limiting mechanisms at very high densities. △ Less

Submitted 18 November, 2011; originally announced November 2011.

Comments: 4 pages, 3 eps figures

Distinguishing impurity concentrations in GaAs and AlGaAs, using very shallow undoped heterostructures

Authors: W. Y. Mak, K. Das Gupta, H. E. Beere, I. Farrer, F. Sfigakis, D. A. Ritchie

Abstract: We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structures and systematically studied the evolution of the mobility as a function of the depth of the 2DEG (from 300nm to 30nm). We demonstrate a way of extracting quantitative information about the background impurity concentra… ▽ More We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structures and systematically studied the evolution of the mobility as a function of the depth of the 2DEG (from 300nm to 30nm). We demonstrate a way of extracting quantitative information about the background impurity concentration in GaAs and AlGaAs, the interface roughness and the charge in the surface states from the data. This information is very useful from the perspective of molecular beam epitaxy (MBE) growth. It is difficult to fabricate such shallow high-mobility 2DEGs using modulation do** due to the need to have a large enough spacer layer to reduce scattering and switching noise from remote ionsied dopants. △ Less

Submitted 6 July, 2010; originally announced July 2010.

Comments: 4 pages, 5 eps figures

Journal ref: Applied Physics Letters 97, 242107 (2010)

Possible effect of collective modes in zero magnetic field transport in an electron-hole bilayer

Authors: A. F. Croxall, K. Das Gupta, C. A. Nicoll, H. E. Beere, I. Farrer, D. A. Ritchie, M. Pepper

Abstract: We report single layer resistivities of 2-dimensional electron and hole gases in an electron-hole bilayer with a 10nm barrier. In a regime where the interlayer interaction is stronger than the intralayer interaction, we find that an insulating state ($dρ/dT < 0$) emerges at $T\sim1.5{\rm K}$ or lower, when both the layers are simultaneously present. This happens deep in the $"$metallic" regime,… ▽ More We report single layer resistivities of 2-dimensional electron and hole gases in an electron-hole bilayer with a 10nm barrier. In a regime where the interlayer interaction is stronger than the intralayer interaction, we find that an insulating state ($dρ/dT < 0$) emerges at $T\sim1.5{\rm K}$ or lower, when both the layers are simultaneously present. This happens deep in the $"$metallic" regime, even in layers with $k_{F}l>500$, thus making conventional mechanisms of localisation due to disorder improbable. We suggest that this insulating state may be due to a charge density wave phase, as has been expected in electron-hole bilayers from the Singwi-Tosi-Land-Sjölander approximation based calculations of L. Liu {\it et al} [{\em Phys. Rev. B}, {\bf 53}, 7923 (1996)]. Our results are also in qualitative agreement with recent Path-Integral-Monte-Carlo simulations of a two component plasma in the low temperature regime [ P. Ludwig {\it et al}. {\em Contrib. Plasma Physics} {\bf 47}, No. 4-5, 335 (2007)] △ Less

Submitted 27 October, 2009; v1 submitted 17 December, 2008; originally announced December 2008.

Comments: 5 pages + 3 EPS figures (replaced with published version)

Journal ref: PRB 80, 125323 (2009)

On the Zero-Bias Anomaly in Quantum Wires

Authors: S. Sarkozy, F. Sfigakis, K. Das Gupta, I. Farrer, D. A. Ritchie, G. A. C. Jones, M. Pepper

Abstract: Undoped GaAs/AlGaAs heterostructures have been used to fabricate quantum wires in which the average impurity separation is greater than the device size. We compare the behavior of the Zero-Bias Anomaly against predictions from Kondo and spin polarization models. Both theories display shortcomings, the most dramatic of which are the linear electron-density dependence of the Zero-Bias Anomaly spin… ▽ More Undoped GaAs/AlGaAs heterostructures have been used to fabricate quantum wires in which the average impurity separation is greater than the device size. We compare the behavior of the Zero-Bias Anomaly against predictions from Kondo and spin polarization models. Both theories display shortcomings, the most dramatic of which are the linear electron-density dependence of the Zero-Bias Anomaly spin-splitting at fixed magnetic field B and the suppression of the Zeeman effect at pinch-off. △ Less

Submitted 6 October, 2008; originally announced October 2008.

Journal ref: Phys. Rev. B 79, 161307 (2009)

Low Temperature Transport in Undoped Mesoscopic Structures

Authors: S. Sarkozy, K. Das Gupta, C. Siegert, A. Ghosh, M. Pepper, I. Farrer, H. E. Beere, D. A. Ritchie, G. A. C. Jones

Abstract: Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified. Signature appearances of the scattering length scale arise in confined two dimensional regions, where the zero-bias anomaly (ZBA) is also observed. These result… ▽ More Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified. Signature appearances of the scattering length scale arise in confined two dimensional regions, where the zero-bias anomaly (ZBA) is also observed. These results explicitly outline the molecular beam epitaxy growth parameters necessary to obtain ultra low density large two dimensional regions as well as clean reproducible mesoscopic devices. △ Less

Submitted 17 July, 2008; originally announced July 2008.

Comments: 4 pages, 4 EPS figs

Anomalous Coulomb drag in electron-hole bilayers

Authors: A. F. Croxall, K. Das Gupta, C. A. Nicoll, M. Thangaraj, H. E. Beere, I. Farrer, D. A. Ritchie, M. Pepper

Abstract: We report Coulomb drag measurements on GaAs-AlGaAs electron-hole bilayers. The two layers are separated by a 10 or 25nm barrier. Below T$\approx$1K we find two features that a Fermi-liquid picture cannot explain. First, the drag on the hole layer shows an upturn, which may be followed by a downturn. Second, the effect is either absent or much weaker in the electron layer, even though the measure… ▽ More We report Coulomb drag measurements on GaAs-AlGaAs electron-hole bilayers. The two layers are separated by a 10 or 25nm barrier. Below T$\approx$1K we find two features that a Fermi-liquid picture cannot explain. First, the drag on the hole layer shows an upturn, which may be followed by a downturn. Second, the effect is either absent or much weaker in the electron layer, even though the measurements are within the linear response regime. Correlated phases have been anticipated in these, but surprisingly, the experimental results appear to contradict Onsager's reciprocity theorem. △ Less

Submitted 27 October, 2009; v1 submitted 1 July, 2008; originally announced July 2008.

Comments: 4 pages, 5 EPS figures (replaced with published version)

Journal ref: PRL 101, 246801 (2008)

Patterned backgating using single-sided mask aligners: application to density-matched electron-hole bilayers

Authors: A. F. Croxall, K. Das Gupta, C. A. Nicoll, M. Thangaraj, I. Farrer, D. A. Ritchie, M. Pepper

Abstract: We report our work on fabricating lithographically aligned patterned backgates on thin (50-60$μ$m) \Roman{roman3}-\Roman{roman5} semiconductor samples using {\it single sided mask aligners only}. Along with this we also present a way to photograph both sides of a thin patterned chip using inexpensive infra-red light emitting diodes (LED) and an inexpensive (consumer) digital camera. A robust met… ▽ More We report our work on fabricating lithographically aligned patterned backgates on thin (50-60$μ$m) \Roman{roman3}-\Roman{roman5} semiconductor samples using {\it single sided mask aligners only}. Along with this we also present a way to photograph both sides of a thin patterned chip using inexpensive infra-red light emitting diodes (LED) and an inexpensive (consumer) digital camera. A robust method of contacting both sides of a sample using an ultrasonic bonder is described. In addition we present a mathematical model to analyse the variation of the electrochemical potential through the doped layers and heterojunctions that are normally present in most GaAs based devices. We utilise the technique and the estimates from our model to fabricate an electron-hole bilayer device in which each layer is separately contacted and has tunable densities. The electron and hole layers are separated by barriers either 25 or 15nm wide. In both cases, the densities can be matched by using appropriate bias voltages. △ Less

Submitted 1 July, 2008; originally announced July 2008.

Comments: 7 pages, 8 EPS figures. Submitted to Journal of Applied Physics

Fabrication of closely spaced, independently contacted Electron-Hole bilayers in GaAs-AlGaAs heterostructures

Authors: J. A. Keogh, K. Das Gupta, H. E. Beere, D. A. Ritchie, M. Pepper

Abstract: We describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron gas (2DEG) that do not require annealing. Four terminal measurements on both layers (25nm apart) are possible. Measurements show a hole mobility… ▽ More We describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron gas (2DEG) that do not require annealing. Four terminal measurements on both layers (25nm apart) are possible. Measurements show a hole mobility $μ_{h}>10^{5}{\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ and an electron mobility $μ_{e}>10^{6}{\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ at 1.5K. Preliminary drag measurements made down to T=300mK indicate an enhancement of coulomb interaction over the values obtained from a static Random Phase Approximation (RPA) calculation. △ Less

Submitted 1 July, 2008; originally announced July 2008.

Comments: 4 pages, 4 EPS figures

Journal ref: APL 87, 202104 (2005)

Insulator superconductor transition on solid inert gas substrates

Authors: K. Das Gupta, Swati S. Soman, G. Sambandamurthy, N. Chandrasekhar

Abstract: We present observations of the insulator-superconductor transition in ultrathin films of Bi on solid xenon condensed on quartz and on Ge on quartz. The relative permeability $ε_{r}$ ranges from 1.5 for Xe to 15 for Ge. Though we find screening effects as expected, the I-S transition is robust, and unmodified by the substrate. The resistance separatrix is found to be close to $h/4e^2$ and the cro… ▽ More We present observations of the insulator-superconductor transition in ultrathin films of Bi on solid xenon condensed on quartz and on Ge on quartz. The relative permeability $ε_{r}$ ranges from 1.5 for Xe to 15 for Ge. Though we find screening effects as expected, the I-S transition is robust, and unmodified by the substrate. The resistance separatrix is found to be close to $h/4e^2$ and the crossover thickness close to 25 $Å$ for all substrates. I-V studies and Aslamazov-Larkin analyses indicate superconductivity is inhomogeneous. The transition is best described in terms of a percolation model. △ Less

Submitted 2 September, 2002; originally announced September 2002.

Comments: Submitted to LT23 Proceedings

Vortices and the mixed state of ultrathin Bi films

Authors: G. Sambandamurthy, K. Das Gupta, Swati S. Soman, N. Chandrasekhar

Abstract: Current-voltage (I-V) characteristics of quench condensed, superconducting, ultrathin Bi films in a magnetic field are reported. These show hysteresis for all films, grown both with and without thin Ge underlayers. Films on Ge underlayers, close to superconductor-insulator transition, show a peak in the critical current, indicating a structural transformation of the vortex solid. These underlaye… ▽ More Current-voltage (I-V) characteristics of quench condensed, superconducting, ultrathin Bi films in a magnetic field are reported. These show hysteresis for all films, grown both with and without thin Ge underlayers. Films on Ge underlayers, close to superconductor-insulator transition, show a peak in the critical current, indicating a structural transformation of the vortex solid. These underlayers, used to make the films more homogeneous, are found to be more effective in pinning the vortices. The upper critical fields ($B_{c2}$) of these films are determined from the resistive transitions in perpendicular magnetic field. The temperature dependence of the upper critical field is found to differ significantly from Ginzburg-Landau theory, after modifications for disorder. △ Less

Submitted 2 September, 2002; originally announced September 2002.

Comments: Submitted to LT23 Proceedings

Critical currents and vortex-unbinding transitions in quench-condensed ultrathin films of Bismuth and Tin

Authors: K. Das Gupta, Swati S. Soman, G. Sambandamurthy, N. Chandrasekhar

Abstract: We have investigated the I-V characteristics of strongly disordered ultra-thin films of {\it Bi} and {\it Sn} produced by quench-condensation. Our results show that both these sytems can be visualized as strongly disordered arrays of Josephson junctions. The experimentally observed I-V characteristics of these films is hysteretic, when the injected current is ramped from zero to critical current… ▽ More We have investigated the I-V characteristics of strongly disordered ultra-thin films of {\it Bi} and {\it Sn} produced by quench-condensation. Our results show that both these sytems can be visualized as strongly disordered arrays of Josephson junctions. The experimentally observed I-V characteristics of these films is hysteretic, when the injected current is ramped from zero to critical current and back. These are remarkably similar to the hysteretic I-V of an underdamped single junction. We show by computer simulations that hysteresis can persist in a very strongly disordered array. It is also possible to estimate the individual junction parameters ($R$, $C$ and $I_c$) from the experimental I-Vs of the film using this model. The films studied are in a regime where the Josephson-coupling energy is larger than the charging energy. We find that a simple relation $I_c(T)=I_c(0)(1-(T/T_c)^4)$ describes the temperature dependence of the critical current quite accurately for films with sheet resistance $\sim$ 500$Ω$ or lower. We also find evidence of a vortex-unbindi △ Less

Submitted 2 September, 2002; originally announced September 2002.

Comments: To appear in Phys Rev B, October 1 Issue

Effect of granularity on the insulator-superconductor transition in ultrathin Bi films

Authors: G. Sambandamurthy, K. Das Gupta, N. Chandrasekhar

Abstract: We have studied the insulator-superconductor transition (IST) by tuning the thickness in quench-condensed $Bi$ films. The resistive transitions of the superconducting films are smooth and can be considered to represent "homogeneous" films. The observation of an IST very close to the quantum resistance for pairs, $R_{\Box}^N \sim h/4e^2$ on several substrates supports this idea. The relevant leng… ▽ More We have studied the insulator-superconductor transition (IST) by tuning the thickness in quench-condensed $Bi$ films. The resistive transitions of the superconducting films are smooth and can be considered to represent "homogeneous" films. The observation of an IST very close to the quantum resistance for pairs, $R_{\Box}^N \sim h/4e^2$ on several substrates supports this idea. The relevant length scales here are the localization length, and the coherence length. However, at the transition, the localization length is much higher than the superconducting coherence length, contrary to expectation for a "homogeneous" transition. This suggests the invalidity of a purely fermionic model for the transition. Furthermore, the current-voltage characteristics of the superconducting films are hysteretic, and show the films to be granular. The relevant energy scales here are the Josephson coupling energy and the charging energy. However, Josephson coupling energies ($E_J$) and the charging energies ($E_c$) at the IST, they are found to obey the relation $E_J < E_c$. This is again contrary to expectation, for the IST in a granular or inhomogeneous, system. Hence, a purely bosonic picture of the transition is also inconsistent with our observations. We conclude that the IST observed in our experiments may be either an intermediate case between the fermioinc and bosonic mechanisms, or in a regime of charge and vortex dynamics for which a quantitative analysis has not yet been done. △ Less

Submitted 31 March, 2001; originally announced April 2001.

Comments: accepted in Physical Review B

Vortex dynamics and upper critical fields in ultrathin Bi films

Authors: G. Sambandamurthy, K. Das Gupta, N. Chandrasekhar

Abstract: Current-voltage (I-V) characteristics of quench condensed, superconducting, ultrathin $Bi$ films in a magnetic field are reported. These I-V's show hysteresis for all films, grown both with and without thin $Ge$ underlayers. Films on Ge underlayers, close to superconductor-insulator transition (SIT), show a peak in the critical current, indicating a structural transformation of the vortex solid… ▽ More Current-voltage (I-V) characteristics of quench condensed, superconducting, ultrathin $Bi$ films in a magnetic field are reported. These I-V's show hysteresis for all films, grown both with and without thin $Ge$ underlayers. Films on Ge underlayers, close to superconductor-insulator transition (SIT), show a peak in the critical current, indicating a structural transformation of the vortex solid (VS). These underlayers, used to make the films more homogeneous, are found to be more effective in pinning the vortices. The upper critical fields (B$_{c2}$) of these films are determined from the resistive transitions in perpendicular magnetic field. The temperature dependence of the upper critical field is found to differ significantly from Ginzburg-Landau theory, after modifications for disorder. △ Less

Submitted 18 April, 2001; v1 submitted 12 March, 2001; originally announced March 2001.

Comments: Phys Rev B, to be published Figure 6 replaced with correct figure

Possible robust insulator-superconductor transition on solid inert gas and other substrates

Authors: K. Das Gupta, G. Sambandamurthy, Swati S. Soman, N. Chandrasekhar

Abstract: We present observations of the insulator-superconductor transition in ultrathin films of Bi on amorphous quartz, quartz coated with Ge, and for the first time, solid xenon condensed on quartz. The relative permeability $ε_r$ ranges from 1.5 for Xe to 15 for Ge. Though we find screening effects as expected, the I-S transition is robust, and unmodified by the substrate. The resistance separatrix i… ▽ More We present observations of the insulator-superconductor transition in ultrathin films of Bi on amorphous quartz, quartz coated with Ge, and for the first time, solid xenon condensed on quartz. The relative permeability $ε_r$ ranges from 1.5 for Xe to 15 for Ge. Though we find screening effects as expected, the I-S transition is robust, and unmodified by the substrate. The resistance separatrix is found to be close to h/4e^2 and the crossover thickness close to $\rm 25 Å$ for all substrates. I-V studies and Aslamazov-Larkin analyses indicate superconductivity is inhomogeneous. The transition can be understood in terms of a percolation model. △ Less

Submitted 10 November, 2000; originally announced November 2000.

Comments: accepted in Physical Review B

Magnetoresistance and conductivity exponents of quench-condensed ultra-thin films of Bi

Authors: K. Das Gupta, G. Sambandamurthy, V. H. S. Moorthy, N. Chandrasekhar

Abstract: We have studied the magnetoresistance (MR) and evolution of conductivity with thickness of quench-condensed Bismuth films on substrates of various dielectric constants. Our results indicate a negative intial MR proportional to the square of the magnetic field. The conductance shows a power-law kind of dependence on thickness, with an exponent close to 1.33, characterisitic of a 2-D percolating s… ▽ More We have studied the magnetoresistance (MR) and evolution of conductivity with thickness of quench-condensed Bismuth films on substrates of various dielectric constants. Our results indicate a negative intial MR proportional to the square of the magnetic field. The conductance shows a power-law kind of dependence on thickness, with an exponent close to 1.33, characterisitic of a 2-D percolating system, only when the films are grown on a thin ($\sim 10${\rm Å} Germanium underlayer but not otherwise. △ Less

Submitted 2 October, 1999; originally announced October 1999.

Comments: 2 pages, 2 eps figures included