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MacroQueue: Automating Measurements in High-Dimensional Parameter Spaces
Authors:
Brad M. Goff,
Jay A. Gupta
Abstract:
Laboratory measurements often use several instruments to fully explore the relevant parameter space; such as, an external lock-in amplifier, an electromagnet, an RF generator, etc.. Ordinarily, these instruments have to be individually controlled and their parameters have to be manually recorded. MacroQueue enables effortless measurements throughout these high-dimensional parameter space systems.…
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Laboratory measurements often use several instruments to fully explore the relevant parameter space; such as, an external lock-in amplifier, an electromagnet, an RF generator, etc.. Ordinarily, these instruments have to be individually controlled and their parameters have to be manually recorded. MacroQueue enables effortless measurements throughout these high-dimensional parameter space systems. MacroQueue is a modular software designed for controlling and automating various laboratory equipment in sync without requiring coding ability. Currently, it includes functions to control the 3 major commercial scanning tunneling microscopes, CreaTec, RHK, and Scienta Omicron in combination with any other instruments that are a part of the systems. It can be extended to control any instrument that can be controlled via Python.
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Submitted 14 May, 2024;
originally announced June 2024.
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Observation of Skyrmion Bubbles in Multilayer [Pt/Co/Cu]n using spin-polarized STM
Authors:
Jacob J. Repicky,
Brad Goff,
Shuyu Cheng,
Roland K. Kawakami,
Jay A. Gupta
Abstract:
Magnetic multilayers are a promising platform for storage and logic devices based on skyrmion spin textures, due to the large materials phase space for tuning properties. Epitaxial superlattice structures of [Pt/Co/Cu]n thin films were grown by molecular beam epitaxy at room temperature. Spin-polarized scanning tunneling microscopy (SP-STM) of these samples was used to probe the connection between…
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Magnetic multilayers are a promising platform for storage and logic devices based on skyrmion spin textures, due to the large materials phase space for tuning properties. Epitaxial superlattice structures of [Pt/Co/Cu]n thin films were grown by molecular beam epitaxy at room temperature. Spin-polarized scanning tunneling microscopy (SP-STM) of these samples was used to probe the connection between surface structure and skyrmion morphology with nanoscale spatial resolution. Irregular-shaped skyrmion bubbles were observed, with effective diameters from 20-200 nm that are much larger than the nanoscale grain structure of the surface topography. Nucleation, annihilation, and motion of skyrmion bubbles could be driven using the stray field of the ferromagnetic tip in repeated imaging, and spin-polarized current/voltage pulses. Our detailed comparison of STM topography and differential conductance images shows that there are no surface defects or inhomogeneities at length scales that could account for the range in skyrmion bubble size or shape observed in the measurements.
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Submitted 1 June, 2023; v1 submitted 17 March, 2023;
originally announced March 2023.
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Scanning Tunneling Microscopy Study of Epitaxial Fe3GeTe2 Monolayers on Bi2Te3
Authors:
Brad M. Goff,
Alexander J. Bishop,
Wenyi Zhou,
Ryan Bailey-Crandell,
Katherine Robinson,
Roland K. Kawakami,
Jay A. Gupta
Abstract:
Introducing magnetism to the surface state of topological insulators, such as Bi2Te3, can lead to a variety of interesting phenomena. We use scanning tunneling microscopy (STM) to study a single quintuple layer (QL) of the van der Waals magnet Fe3GeTe2 (FGT) that is grown on Bi2Te3 via molecular beam epitaxy. STM topographic images show that the FGT grows as free-standing islands on Bi2Te3 and out…
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Introducing magnetism to the surface state of topological insulators, such as Bi2Te3, can lead to a variety of interesting phenomena. We use scanning tunneling microscopy (STM) to study a single quintuple layer (QL) of the van der Waals magnet Fe3GeTe2 (FGT) that is grown on Bi2Te3 via molecular beam epitaxy. STM topographic images show that the FGT grows as free-standing islands on Bi2Te3 and outwards from Bi2Te3 steps. Atomic resolution imaging shows atomic lattices of 390 +- 10 pm for FGT and 430 +- 10 pm for Bi2Te3, consistent with the respective bulk crystals. A moiré pattern is observed on FGT regions with a periodicity of 4.3 +- 0.4 nm that can be attributed solely to this lattice mismatch and thus indicates zero rotational misalignments. While most of the surface is covered by a single QL of the FGT, there are small double QL regions, as well as regions with distinct chemical terminations due to an incomplete QL. The most common partial QL surface termination is the FeGe layer, in which the top two atomic layers are missing. This termination has a distinctive electronic structure and a (sqrt3 x sqrt3)R30 reconstruction overlaid on the moiré pattern in STM images. Magnetic circular dichroism (MCD) measurements confirm these thin FGT films are ferromagnetic with TC ~190 K.
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Submitted 20 November, 2023; v1 submitted 17 March, 2023;
originally announced March 2023.
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An Atomically Tailored Chiral Magnet with Small Skyrmions at Room Temperature
Authors:
Tao Liu,
Camelia M. Selcu,
Binbin Wang,
Núria Bagués,
Po-Kuan Wu,
Timothy Q. Hartnett,
Shuyu Cheng,
Denis Pelekhov,
Roland A. Bennett,
Joseph Perry Corbett,
Jacob R. Repicky,
Brendan McCullian,
P. Chris Hammel,
Jay A. Gupta,
Mohit Randeria,
Prasanna V. Balachandran,
David W. McComb,
Roland K. Kawakami
Abstract:
Creating materials that do not exist in nature can lead to breakthroughs in science and technology. Magnetic skyrmions are topological excitations that have attracted great attention recently for their potential applications in low power, ultrahigh density memory. A major challenge has been to find materials that meet the dual requirement of small skyrmions stable at room temperature. Here we meet…
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Creating materials that do not exist in nature can lead to breakthroughs in science and technology. Magnetic skyrmions are topological excitations that have attracted great attention recently for their potential applications in low power, ultrahigh density memory. A major challenge has been to find materials that meet the dual requirement of small skyrmions stable at room temperature. Here we meet both these goals by develo** epitaxial FeGe films with excess Fe using atomic layer molecular beam epitaxy (MBE) far from thermal equilibrium. Our novel atomic layer design permits the incorporation of 20% excess Fe while maintaining a non-centrosymmetric crystal structure supported by theoretical calculations and necessary for stabilizing skyrmions. We show that the Curie temperature is well above room temperature, and that the skyrmions probed by topological Hall effect have sizes down to 15 nm as imaged by Lorentz transmission electron microscopy (LTEM) and magnetic force microscopy (MFM). Our results illustrate new avenues for creating artificial materials tailored at the atomic scale that can impact nanotechnology.
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Submitted 9 March, 2023;
originally announced March 2023.
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Kinetically-controlled epitaxial growth of Fe$_3$GeTe$_2$ van der Waals ferromagnetic films
Authors:
Wenyi Zhou,
Alexander J. Bishop,
Menglin Zhu,
Igor Lyalin,
Robert C. Walko,
Jay A. Gupta,
**woo Hwang,
Roland K. Kawakami
Abstract:
We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-deficient non-van der Waals phase (Fe$_3$Ge$_2$) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning…
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We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-deficient non-van der Waals phase (Fe$_3$Ge$_2$) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning transmission electron microscopy and scanning tunneling microscopy, we optimize the FGT films to have atomically smooth surfaces and abrupt interfaces with the Ge(111) substrate. The magnetic properties of our high quality material are confirmed through magneto-optic, magnetotransport, and spin-polarized STM studies. Importantly, this demonstrates how the interplay of energetics and kinetics can help tune the re-evaporation rate of chalcogen atoms and interdiffusion from the underlayer, which paves the way for future studies of van der Waals epitaxy.
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Submitted 8 February, 2022;
originally announced February 2022.
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Atomic scale visualization of topological spin textures in the chiral magnet MnGe
Authors:
Jacob Repicky,
Po-Kuan Wu,
Tao Liu,
Joseph Corbett,
Tiancong Zhu,
Adam Ahmed,
N. Takeuchi,
J. Guerrero-Sanchez,
Mohit Randeria,
Roland Kawakami,
Jay A. Gupta
Abstract:
Spin polarized scanning tunneling microscopy is used to directly image topological magnetic textures in thin films of MnGe, and to correlate the magnetism with structure probed at the atomic-scale. Our images indicate helical stripe domains, each characterized by a single wavevector Q, and their associated helimagnetic domain walls, in contrast to the 3Q magnetic state seen in the bulk. Combining…
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Spin polarized scanning tunneling microscopy is used to directly image topological magnetic textures in thin films of MnGe, and to correlate the magnetism with structure probed at the atomic-scale. Our images indicate helical stripe domains, each characterized by a single wavevector Q, and their associated helimagnetic domain walls, in contrast to the 3Q magnetic state seen in the bulk. Combining our surface measurements with micromagnetic modeling, we deduce the three-dimensional orientation of the helical wavevectors and gain detailed understanding of the structure of individual domain walls and their intersections. We find that three helical domains meet in two distinct ways to produce either a "target-like" or a "pi-like" topological spin texture, and correlate these with local strain on the surface. We further show that the target-like texture can be reversibly manipulated through either current/voltage pulsing or applied magnetic field, a promising step toward future applications.
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Submitted 3 August, 2020;
originally announced August 2020.
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Spin polarized STM imaging of nanoscale Néel skyrmions in an SrIrO3/SrRuO3 Perovskite Bilayer
Authors:
J. P. Corbett,
K. -Y. Meng,
J. J. Repicky,
J. Rowland,
A. S. Ahmed,
J. Guerrero-Sanchez,
F. Y. Yang,
J. A. Gupta
Abstract:
Spin-polarized scanning tunneling microscopy (SPSTM) was used to directly image nanoscale Néel skyrmions in a SrIrO3 / SrRuO3 bilayer system that are among the smallest reported to date in any system. Off-axis magnetron sputtering was used to cap epitaxial films of the oxide ferromagnet SRO with 2 unit cells of SrIrO3, intended to provide interfacial spin orbit coupling. Atomic resolution STM imag…
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Spin-polarized scanning tunneling microscopy (SPSTM) was used to directly image nanoscale Néel skyrmions in a SrIrO3 / SrRuO3 bilayer system that are among the smallest reported to date in any system. Off-axis magnetron sputtering was used to cap epitaxial films of the oxide ferromagnet SRO with 2 unit cells of SrIrO3, intended to provide interfacial spin orbit coupling. Atomic resolution STM imaging and tunneling spectroscopy were used to identify island-like SrIrO3 grains and small regions of bare SrRuO3. Isolated skyrmions were only observed in SrIrO3-covered regions of the film, and exhibited a distribution of sizes and shapes with an average diameter of 3 nm. We found that skyrmions must be fully contained within, but may be smaller than, any given SrIrO3 region. Additionally, skyrmions were observed on SrIrO3 islands of varying thickness without loss of SPSTM contrast, suggesting the magnetic texture lies within the SrIrO3 island rather than the underlying ferromagnetic SrRuO3. Density functional theory calculations suggest this could be due to a small induced magnetic moment associated with IrO layers in the SrIrO3 film.
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Submitted 12 July, 2020;
originally announced July 2020.
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Chemical Migration and Dipole Formation at van der Waals Interfaces between Magnetic Transition Metal Chalcogenides and Topological Insulators
Authors:
Brenton A. Noesges,
Tiancong Zhu,
Jacob J. Repicky,
Sisheng Yu,
Fenguan Yang,
Jay A. Gupta,
Roland K. Kawakami,
Leonard J. Brillson
Abstract:
Metal and magnetic overlayers alter the surface of the topological insulator (TI) bismuth selenide (Bi$_2$Se$_3$) through proximity effects but also by changing the composition and chemical structure of the Bi$_2$Se$_3$ sub-surface. The interface between Bi$_2$Se$_3$ and Mn metal or manganese selenide was explored using x-ray photoelectron spectroscopy (XPS) revealing chemical and electronic chang…
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Metal and magnetic overlayers alter the surface of the topological insulator (TI) bismuth selenide (Bi$_2$Se$_3$) through proximity effects but also by changing the composition and chemical structure of the Bi$_2$Se$_3$ sub-surface. The interface between Bi$_2$Se$_3$ and Mn metal or manganese selenide was explored using x-ray photoelectron spectroscopy (XPS) revealing chemical and electronic changes at the interface. Depositing Mn metal on Bi$_2$Se$_3$ without an external source of Se shows unexpected bonding within the Mn layer due to Mn-Se bonding as Se diffuses out of the Bi$_2$Se$_3$ layer into the growing Mn film. The Se out-diffusion is further evidenced by changes in Bi core levels within the Bi$_2$Se$_3$ layers indicating primarily Bi-Bi bonding over Bi-Se bonding. No out-diffusion of Se occurred when excess Se is supplied with Mn, indicating the importance of supplying enough chalcogen atoms with deposited metals. However, Bi$_2$Se$_3$ core level photoelectrons exhibited a rigid chemical shift toward higher binding energy after depositing a monolayer of MnSe$_{2-x}$, indicating a dipole within the overlayer. Stoichiometry calculations indicated that the monolayer forms MnSe preferentially over the transition metal dichalcogenide (TMD) phase MnSe$_2$, providing a consistent picture of the dipole formation in which a plane of Se anions sits above Mn cations. This study shows that chemical diffusion and dipole formation are important for Mn-Bi$_2$Se$_3$ and MnSe$_{2-x}$-Bi$_2$Se$_3$ and should be considered carefully for TMD/TI interfaces more generally.
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Submitted 12 April, 2020;
originally announced April 2020.
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Coherent Growth and Characterization of van der Waals 1T-VSe$_2$ Layers on GaAs(111)B Using Molecular Beam Epitaxy
Authors:
Tiancong Zhu,
Dante J. O'Hara,
Brenton A. Noesges,
Menglin Zhu,
Jacob J. Repicky,
Mark R. Brenner,
Leonard J. Brillson,
**woo Hwang,
Jay A. Gupta,
Roland K. Kawakami
Abstract:
We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectrosc…
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We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe$_2$ films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective cap** layer should be employed for device applications. This work demonstrates that VSe$_2$, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices.
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Submitted 11 April, 2020;
originally announced April 2020.
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Magnetic Properties and Electronic Structure of Magnetic Topological Insulator MnBi$_2$Se$_4$
Authors:
Tiancong Zhu,
Alexander J. Bishop,
Tong Zhou,
Menglin Zhu,
Dante J. O'Hara,
Alexander A. Baker,
Shuyu Cheng,
Robert C. Walko,
Jacob J. Repicky,
Jay A. Gupta,
Chris M. Jozwiak,
Eli Rotenberg,
**woo Hwang,
Igor Žutić,
Roland K. Kawakami
Abstract:
The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of…
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The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of multilayer trigonal MnBi$_2$Se$_4$ with alternating-layer molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) identify a well-ordered multilayer van der Waals (vdW) crystal with septuple-layer base units in agreement with the trigonal structure. Systematic thickness-dependent magnetometry studies illustrate the layered antiferromagnetic ordering as predicted by theory. Angle-resolved photoemission spectroscopy (ARPES) reveals the gapless Dirac-like surface state of MnBi$_2$Se$_4$, which demonstrates that MnBi$_2$Se$_4$ is a topological insulator above the magnetic ordering temperature. These systematic studies show that MnBi$_2$Se$_4$ is a promising candidate for exploring the rich topological phases of layered antiferromagnetic topological insulators.
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Submitted 17 March, 2020;
originally announced March 2020.
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Tunable tunnel barriers in a semiconductor via ionization of individual atoms
Authors:
Sara M. Mueller,
Dongjoon Kim,
Stephen R. McMillan,
Steven J. Tjung,
Jacob J. Repicky,
Stephen Gant,
Evan Lang,
Fedor Bergmann,
Kevin Werner,
Enam Chowdhury,
Aravind Asthagiri,
Michael E. Flatte,
Jay A. Gupta
Abstract:
We report scanning tunneling microscopy studies of individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ~100x. The spatial extent and magnitude of the tunneling effect are widely tunable by imaging conditions such as bias voltage, set current and photoillumination. We att…
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We report scanning tunneling microscopy studies of individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ~100x. The spatial extent and magnitude of the tunneling effect are widely tunable by imaging conditions such as bias voltage, set current and photoillumination. We attribute the effect to occupation of a (+/0) charge transition level, and switching of the associated adatom-induced band bending. The effect in STM topographic images is well reproduced by transport modeling of filling and emptying rates as a function of the tip position. STM atomic contrast and tunneling spectra are in good agreement with density functional theory calculations for In adatoms. The adatom ionization effect can extend to distances greater than 50 nm away, which we attribute to the low concentration and low binding energy of the residual donors in the undoped InSb crystal. These studies demonstrate how individual atoms can be used to sensitively control current flow in nanoscale devices.
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Submitted 15 June, 2020; v1 submitted 9 September, 2019;
originally announced September 2019.
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Exploring the legacy of big stargazing events
Authors:
Karen L. Masters,
Jennifer A. Gupta,
Wiktoria Kedziora
Abstract:
We assess the impact of annual large-scale stargazing events, following the success of Stargazing Live and based on our experiences running events in Portsmouth, UK
We assess the impact of annual large-scale stargazing events, following the success of Stargazing Live and based on our experiences running events in Portsmouth, UK
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Submitted 4 December, 2018;
originally announced December 2018.
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Surface Structures of Epitaxial B20 FeGe(-1-1-1) Thin Films via Scanning Tunneling Microscopy
Authors:
J. P. Corbett,
T. Zhu,
A. S. Ahmed,
S. J. Tjung,
J. J. Repicky,
T. Takeuchi,
R. K. Kawakami,
J. A. Gupta
Abstract:
We grew 20-100 nm thick films of B20 FeGe by molecular beam epitaxy and investigated the surface structures via scanning tunneling microscopy. We observed the atomic resolution of each of the four possible chemical layers in FeGe(-1-1-1). An average hexagonal surface unit cell is observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffra…
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We grew 20-100 nm thick films of B20 FeGe by molecular beam epitaxy and investigated the surface structures via scanning tunneling microscopy. We observed the atomic resolution of each of the four possible chemical layers in FeGe(-1-1-1). An average hexagonal surface unit cell is observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffraction resulting in a size of ~6.84 Å in agreement with the bulk expectation. Furthermore, the atomic resolution and registry across triple-layer step edges definitively determine the grain orientation as (111) or (-1-1-1). Further verification of the grain orientation is made by Ar+ sputtering FeGe(-1-1-1) surface allowing direct imaging of the subsurface layer.
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Submitted 2 July, 2018;
originally announced July 2018.
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STM and DFT studies of CO2 adsorption on Cu(100)-O surface
Authors:
Steven J. Tjung,
Qiang Zhang,
Jacob J. Repicky,
Simuck F. Yuk,
Xiaowa Nie,
Nancy M. Santagata,
Aravind Asthagiri,
Jay A. Gupta
Abstract:
We characterized CO2 adsorption and diffusion on the missing row reconstructed Cu(100)-O surface using a combination of scanning tunneling microscopy (STM) and density functional theory (DFT) calculations with dispersion. We deposited CO2 molecules in situ at 5K, which allowed us to unambiguously identify individual CO2 molecules and their adsorption sites. Based on a comparison of experimental an…
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We characterized CO2 adsorption and diffusion on the missing row reconstructed Cu(100)-O surface using a combination of scanning tunneling microscopy (STM) and density functional theory (DFT) calculations with dispersion. We deposited CO2 molecules in situ at 5K, which allowed us to unambiguously identify individual CO2 molecules and their adsorption sites. Based on a comparison of experimental and DFT-generated STM images, we find that the CO2 molecules sit in between the O atoms in the missing row reconstructed Cu(100)-O surface. The CO2 molecules are easily perturbed by the STM tip under typical imaging conditions, suggesting that the molecules are weakly bound to the surface. The calculated adsorption energy, vibrational modes, and diffusion barriers of the CO2 molecules also indicate weak adsorption, in qualitative agreement with the experiments. A comparison of tunneling spectroscopy and DFT-calculated density of states shows that the primary change near the Fermi level is associated with changes to the surface states with negligible contribution from the CO2 molecular states.
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Submitted 7 June, 2018;
originally announced June 2018.
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Topological Dirac Semimetal Na3Bi Films in the Ultrathin Limit via Alternating Layer Molecular Beam Epitaxy
Authors:
Igor V. Pinchuk,
Thaddeus J. Asel,
Andrew Franson,
Tiancong Zhu,
Yuan-Ming Lu,
Leonard J. Brillson,
Ezekiel Johnston-Halperin,
Jay A. Gupta,
Roland K. Kawakami
Abstract:
Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk band gap and generating the quantum spin Hall effect from a topological Dirac semimetal, though continuous films in the few nanometer regime have been difficult to realize. Here, we utilize alternating layer molecular beam epitaxy (MBE) to achieve uniform and continuous single crystal films of Na3Bi(0001) on insulatin…
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Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk band gap and generating the quantum spin Hall effect from a topological Dirac semimetal, though continuous films in the few nanometer regime have been difficult to realize. Here, we utilize alternating layer molecular beam epitaxy (MBE) to achieve uniform and continuous single crystal films of Na3Bi(0001) on insulating Al2O3(0001) substrates and demonstrate electrical transport on films with 3.8 nm thickness (4 unit cells). The high material quality is confirmed through in situ reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), x-ray diffraction (XRD), and x-ray photoelectron spectroscopy (XPS). In addition, these films are employed as seed layers for subsequent growth by codeposition, leading to atomic layer-by-layer growth as indicated by RHEED intensity oscillations. These material advances facilitate the pursuit of quantum phenomena in thin films of Dirac semimetals.
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Submitted 23 May, 2018; v1 submitted 17 May, 2018;
originally announced May 2018.
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Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit
Authors:
Dante J. O'Hara,
Tiancong Zhu,
Amanda H. Trout,
Adam S. Ahmed,
Yunqiu,
Luo,
Choong Hee Lee,
Mark R. Brenner,
Siddharth Rajan,
Jay A. Gupta,
David W. McComb,
Roland K. Kawakami
Abstract:
Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe$_x$) films grown by molecular beam epitaxy (MBE). Magnetic and structu…
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Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe$_x$) films grown by molecular beam epitaxy (MBE). Magnetic and structural characterization provides strong evidence that in the monolayer limit, the ferromagnetism originates from a vdW manganese diselenide (MnSe$_2$) monolayer, while for thicker films it could originate from a combination of vdW MnSe$_2$ and/or interfacial magnetism of $α$-MnSe(111). Magnetization measurements of monolayer MnSe$_x$ films on GaSe and SnSe$_2$ epilayers show ferromagnetic ordering with large saturation magnetization of ~ 4 Bohr magnetons per Mn, which is consistent with density functional theory calculations predicting ferromagnetism in monolayer 1T-MnSe$_2$. Growing MnSe$_x$ films on GaSe up to high thickness (~ 40 nm) produces $α$-MnSe(111), and an enhanced magnetic moment (~ 2x) compared to the monolayer MnSe$_x$ samples. Detailed structural characterization by scanning transmission electron microscopy (STEM), scanning tunneling microscopy (STM), and reflection high energy electron diffraction (RHEED) reveal an abrupt and clean interface between GaSe(0001) and $α$-MnSe(111). In particular, the structure measured by STEM is consistent with the presence of a MnSe$_2$ monolayer at the interface. These results hold promise for potential applications in energy efficient information storage and processing.
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Submitted 22 February, 2018;
originally announced February 2018.
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Crystalline hydrogenation of graphene by STM tip-induced field dissociation of H$_2$
Authors:
S. J. Tjung,
S. M. Hollen,
G. A. Gambrel,
N. M. Santagata,
E. Johnston-Halperin,
J. A. Gupta
Abstract:
We have developed a novel method for crystalline hydrogenation of graphene on the nanoscale. Molecular hydrogen was physisorbed at 5 K onto pristine graphene islands grown on Cu(111) in ultrahigh vacuum. Field emission local to the tip of a scanning tunneling microscope dissociates H$_2$ and results in hydrogenated graphene. At lower coverage, isolated point defects are found on the graphene and a…
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We have developed a novel method for crystalline hydrogenation of graphene on the nanoscale. Molecular hydrogen was physisorbed at 5 K onto pristine graphene islands grown on Cu(111) in ultrahigh vacuum. Field emission local to the tip of a scanning tunneling microscope dissociates H$_2$ and results in hydrogenated graphene. At lower coverage, isolated point defects are found on the graphene and are attributed to chemisorbed H on top and bottom surfaces. Repeated H$_2$ exposure and field emission yielded patches and then complete coverage of a crystalline $\sqrt{3}$ $\times$ $\sqrt{3}$ R30° phase, as well as less densely packed 3 $\times$ 3 and 4 $\times$ 4 structures. The hydrogenation can be reversed by imaging with higher bias voltage.
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Submitted 3 June, 2017; v1 submitted 31 December, 2016;
originally announced January 2017.
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Native defects in ultra-high vacuum grown graphene islands on Cu(111)
Authors:
S. M. Hollen,
S. J. Tjung,
K. R. Mattioli,
G. A. Gambrel,
N. M. Santagata,
E. Johnston-Halperin,
J. A. Gupta
Abstract:
We present a scanning tunneling microscopy (STM) study of native defects in graphene islands grown by ultra-high vacuum (UHV) decomposition of ethylene on Cu(111). We characterize these defects through a survey of their apparent heights, atomic-resolution imaging, and detailed tunneling spectroscopy. Bright defects that occur only in graphene regions are identified as C site point defects in the g…
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We present a scanning tunneling microscopy (STM) study of native defects in graphene islands grown by ultra-high vacuum (UHV) decomposition of ethylene on Cu(111). We characterize these defects through a survey of their apparent heights, atomic-resolution imaging, and detailed tunneling spectroscopy. Bright defects that occur only in graphene regions are identified as C site point defects in the graphene lattice and are most likely single C vacancies. Dark defect types are observed in both graphene and Cu regions, and are likely point defects in the Cu surface. We also present data showing the importance of bias and tip termination to the appearance of the defects in STM images and the ability to achieve atomic resolution. Finally, we present tunneling spectroscopy measurements probing the influence of point defects on the local electronic landscape of graphene islands.
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Submitted 19 May, 2015;
originally announced May 2015.
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Modification of electronic surface states by graphene islands on Cu(111)
Authors:
S. M. Hollen,
G. A. Gambrel,
S. J. Tjung,
N. M. Santagata,
E. Johnston-Halperin,
J. A. Gupta
Abstract:
We present a study of graphene/substrate interactions on UHV-grown graphene islands with minimal surface contamination using \emph{in situ} low-temperature scanning tunneling microscopy (STM). We compare the physical and electronic structure of the sample surface with atomic spatial resolution on graphene islands versus regions of bare Cu(111) substrate. We find that the Rydberg-like series of ima…
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We present a study of graphene/substrate interactions on UHV-grown graphene islands with minimal surface contamination using \emph{in situ} low-temperature scanning tunneling microscopy (STM). We compare the physical and electronic structure of the sample surface with atomic spatial resolution on graphene islands versus regions of bare Cu(111) substrate. We find that the Rydberg-like series of image potential states is shifted toward lower energy over the graphene islands relative to Cu(111), indicating a decrease in the local work function, and the resonances have a much smaller linewidth, indicating reduced coupling to the bulk. In addition, we show the dispersion of the occupied Cu(111) Shockley surface state is influenced by the graphene layer, and both the band edge and effective mass are shifted relative to bare Cu(111).
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Submitted 19 May, 2015;
originally announced May 2015.
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Blazar Compton efficiencies: Fermi, external photons and the Sequence
Authors:
J. A. Gupta,
I. W. A. Browne,
M. W. Peel
Abstract:
The Fermi-LAT survey provides a large sample of blazars selected on the strength of their inverse Compton emission. We cross-correlate the first Fermi-LAT catalogue with the CRATES radio catalogue and use this sample to investigate whether blazar gamma-ray luminosities are influenced by the availability of external photons to be up-scattered. Using the 8.4 GHz flux densities of their compact radio…
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The Fermi-LAT survey provides a large sample of blazars selected on the strength of their inverse Compton emission. We cross-correlate the first Fermi-LAT catalogue with the CRATES radio catalogue and use this sample to investigate whether blazar gamma-ray luminosities are influenced by the availability of external photons to be up-scattered. Using the 8.4 GHz flux densities of their compact radio cores as a proxy for their jet power, we calculate their Compton Efficiency parameters, which measure the ability of jets to convert power in the form of ultra-relativistic electrons into Compton gamma-rays. We find no clear differences in Compton efficiencies between BL Lac objects and FSRQs and no anti-correlation between Compton efficiency and synchrotron peak frequency. This suggests that the scattering of external photons is energetically unimportant compared to the synchrotron self-Compton process. These results contradict the predictions of the blazar sequence.
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Submitted 25 June, 2011;
originally announced June 2011.
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Transport properties of two laterally coupled vertical quantum dots in series with tunable inter-dot coupling
Authors:
T. Hatano,
S. Amaha,
T. Kubo,
S. Teraoka,
Y. Tokura,
J. A. Gupta,
D. G. Austing,
S. Tarucha
Abstract:
We describe the electronic properties of a double dot for which the lateral coupling between the two vertical dots can be controlled in-situ with a center gate voltage (Vc) and the current flows through the two dots in series. When Vc is large and positive, the two dots merge. As Vc is made less positive, two dots are formed whose coupling is reduced. We measure charging diagrams for positive and…
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We describe the electronic properties of a double dot for which the lateral coupling between the two vertical dots can be controlled in-situ with a center gate voltage (Vc) and the current flows through the two dots in series. When Vc is large and positive, the two dots merge. As Vc is made less positive, two dots are formed whose coupling is reduced. We measure charging diagrams for positive and negative source-drain voltages in the weak coupling regime and observe current rectification due to the Pauli spin blockade when the hyperfine interaction between the electrons and the nuclei is suppressed.
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Submitted 31 July, 2010;
originally announced August 2010.
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Quantum oscillations in the microwave magnetoabsorption of a 2D electron gas
Authors:
O. M. Fedorych,
M. Potemski,
S. A. Studenikin,
J. A. Gupta,
Z. R. Wasilewski,
I. A. Dmitriev
Abstract:
We report on the experimental observation of the quantum oscillations in microwave magnetoabsorption of a high-mobility two-dimensional electron gas induced by Landau quantization. Using original resonance-cavity technique, we observe two kinds of oscillations in the magnetoabsorption originating from inter-Landau-level and intra-Landau-level transitions. The experimental observations are in full…
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We report on the experimental observation of the quantum oscillations in microwave magnetoabsorption of a high-mobility two-dimensional electron gas induced by Landau quantization. Using original resonance-cavity technique, we observe two kinds of oscillations in the magnetoabsorption originating from inter-Landau-level and intra-Landau-level transitions. The experimental observations are in full accordance with theoretical predictions. Presented theory also explains why similar quantum oscillations are not observed in transmission and reflection experiments on high-mobility structures despite of very strong effect of microwaves on the dc resistance in the same samples.
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Submitted 2 June, 2010;
originally announced June 2010.
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The Survey of Extragalactic Nuclear Spectral Energies
Authors:
J. A. Gupta,
I. W. A. Browne,
B. M. Pazderska
Abstract:
We present the first results from the new Survey of Extragalactic Nuclear Spectral Energies (SENSE) sample of "blazars". The sample has been chosen with minimal selection effects and is therefore ideal to probe the intrinsic properties of the blazar population. We report evidence for negative cosmological evolution in this radio selected sample and give an outline of future work related to the S…
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We present the first results from the new Survey of Extragalactic Nuclear Spectral Energies (SENSE) sample of "blazars". The sample has been chosen with minimal selection effects and is therefore ideal to probe the intrinsic properties of the blazar population. We report evidence for negative cosmological evolution in this radio selected sample and give an outline of future work related to the SENSE sample.
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Submitted 5 October, 2009;
originally announced October 2009.
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Gate Adjustable Coherent Three and Four Level Mixing in a Vertical Quantum Dot Molecule
Authors:
C. Payette,
S. Amaha,
T. Hatano,
K. Ono,
J. A. Gupta,
G. C. Aers,
D. G. Austing,
S. V. Nair,
S. Tarucha
Abstract:
We study level mixing in the single particle energy spectrum of one of the constituent quantum dots in a vertical double quantum dot by performing magneto-resonant-tunneling spectroscopy. The device used in this study differs from previous vertical double quantum dot devices in that the single side gate is now split into four separate gates. Because of the presence of natural perturbations cause…
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We study level mixing in the single particle energy spectrum of one of the constituent quantum dots in a vertical double quantum dot by performing magneto-resonant-tunneling spectroscopy. The device used in this study differs from previous vertical double quantum dot devices in that the single side gate is now split into four separate gates. Because of the presence of natural perturbations caused by anharmonicity and anistrophy, applying different combinations of voltages to these gates allows us to alter the effective potential landscape of the two dots and hence influence the level mixing. We present here preliminary results from one three level crossing and one four level crossings high up in the energy spectrum of one of the probed quantum dots, and demonstrate that we are able to change significantly the energy dispersions with magnetic field in the vicinity of the crossing regions.
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Submitted 31 August, 2009;
originally announced August 2009.
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Incommensurability and atomic structure of c(2x2)N/Cu(100)
Authors:
T. Choi,
C. D. Ruggiero,
J. A. Gupta
Abstract:
We use a scanning tunneling microscope operating in a low temperature, ultrahigh vacuum environment to study the atomic structure of single layer films of Cu2N grown on Cu(100). The c(2x2) lattice of Cu2N is incommensurate, with a lattice constant of 3.72 +/- 0.02 angstrom that is 3% larger than the bare Cu(100) surface. This finding suggests that strain due to lattice mismatch contributes to se…
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We use a scanning tunneling microscope operating in a low temperature, ultrahigh vacuum environment to study the atomic structure of single layer films of Cu2N grown on Cu(100). The c(2x2) lattice of Cu2N is incommensurate, with a lattice constant of 3.72 +/- 0.02 angstrom that is 3% larger than the bare Cu(100) surface. This finding suggests that strain due to lattice mismatch contributes to self assembly in this system. We find that the image contrast on Cu2N islands depends on bias voltage, which reconciles several interpretations in the literature. We assign features in these STM images to the Cu, N and hollow sites in the Cu2N lattice with the aid of co-adsorbed CO molecules. This atomic registry allows us to characterize four different defects on Cu2N, which influence the sticking coefficient and electronic coupling of adsorbates.
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Submitted 21 May, 2008;
originally announced May 2008.
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Two level anti-crossings high up in the single-particle energy spectrum of a quantum dot
Authors:
C. Payette,
D. G. Austing,
G. Yu,
J. A. Gupta,
S. V. Nair,
B. Partoens,
S. Amaha,
S. Tarucha
Abstract:
We study the evolution with magnetic field of the single-particle energy levels high up in the energy spectrum of one dot as probed by the ground state of the adjacent dot in a weakly coupled vertical quantum dot molecule. We find that the observed spectrum is generally well accounted for by the calculated spectrum for a two-dimensional elliptical parabolic confining potential, except in several…
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We study the evolution with magnetic field of the single-particle energy levels high up in the energy spectrum of one dot as probed by the ground state of the adjacent dot in a weakly coupled vertical quantum dot molecule. We find that the observed spectrum is generally well accounted for by the calculated spectrum for a two-dimensional elliptical parabolic confining potential, except in several regions where two or more single-particle levels approach each other. We focus on two two-level crossing regions which show unexpected anti-crossing behavior and contrasting current dependences. Within a simple coherent level mixing picture, we can model the current carried through the coupled states of the probed dot provided the intrinsic variation with magnetic field of the current through the states (as if they were uncoupled) is accounted for by an appropriate interpolation scheme.
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Submitted 4 October, 2007;
originally announced October 2007.
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Magnetic field induced effects in the high source-drain bias current of weakly coupled vertical quantum dot molecules
Authors:
D. G. Austing,
C. Payette,
G. Yu,
J. A. Gupta
Abstract:
We report on the basic properties of recently observed magnetic field resonance, induced time dependent oscillation, and hysteresis effects in the current flowing through two weakly coupled vertical quantum dots at high source-drain bias (up to a few tens of mV). These effects bare some similarity to those reported in the N=2 spin-blockade regime, usually for weak in-plane magnetic field, of qua…
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We report on the basic properties of recently observed magnetic field resonance, induced time dependent oscillation, and hysteresis effects in the current flowing through two weakly coupled vertical quantum dots at high source-drain bias (up to a few tens of mV). These effects bare some similarity to those reported in the N=2 spin-blockade regime, usually for weak in-plane magnetic field, of quantum dot molecules and attributed to hyperfine coupling, except here the measurements are conducted outside of the spin-blockade regime and the out-of-plane magnetic field is up to ~6 T.
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Submitted 3 October, 2007;
originally announced October 2007.
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Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors
Authors:
B. A. Piot,
D. K. Maude,
M. Henini,
Z. R. Wasilewski,
J. A. Gupta,
K. J. Friedland,
R. Hey,
K. H. Ploog,
U. Gennser,
A. Cavanna,
D. Mailly,
R. Airey,
G. Hill
Abstract:
In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a magnetic-field-induced Stoner transition. In this work, we extend the analysis to investigate the influence of the single-particle Zeeman energy on the quantum Hall ferromagnet a…
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In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a magnetic-field-induced Stoner transition. In this work, we extend the analysis to investigate the influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors. The single-particle Zeeman energy is tuned through the application of an additional in-plane magnetic field. Both the evolution of the spin polarization of the system and the critical magnetic field for spin splitting are well described as a function of the tilt angle of the sample in the magnetic field.
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Submitted 1 May, 2007;
originally announced May 2007.
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Frequency quenching of microwave induced resistance oscillations in a high mobility two-dimensional electron gas
Authors:
S. A. Studenikin,
A. S. Sachrajda,
J. A. Gupta,
Z. R. Wasilewski,
O. M. Fedorych,
M. Byszewski,
D. K. Maude,
M. Potemski,
M. Hilke,
L. N. Pfeiffer,
K. W. West
Abstract:
The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs/AlGaAs structures to explore the limits at which these oscillations can be observed. It is found that in dc transport experiments at frequencies above 120 GHz, MIROs start to quench, while above 230 GHz, they completely disappear. The results will need to b…
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The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs/AlGaAs structures to explore the limits at which these oscillations can be observed. It is found that in dc transport experiments at frequencies above 120 GHz, MIROs start to quench, while above 230 GHz, they completely disappear. The results will need to be understood theoretically but are qualitatively discussed within a model in which forced electronic charge oscillations (plasmons) play an intermediate role in the interaction process between the radiation and the single-particle electron excitations between Landau levels.
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Submitted 19 November, 2007; v1 submitted 3 February, 2006;
originally announced February 2006.
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Local environment of Nitrogen in GaN{y}As{1-y} epilayers on GaAs (001) studied using X-ray absorption near edge spectroscopy
Authors:
J. A. Gupta,
M. W. C. Dharma-wardana,
A. Jürgensen,
E. D. Crozier,
J. J. Rehr,
M. Prange
Abstract:
X-ray absorption near-edge spectroscopy (XANES) is used to study the N environment in bulk GaN and in GaN{y}As{1-y} epilayers on GaAs (001), for y \~5%. Density-functional optimized structures were used to predict XANES via multiple-scattering theory. We obtain striking agreement for pure GaN. An alloy model with nitrogen pairs on Ga accurately predicts the threshold energy, the width of the XAN…
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X-ray absorption near-edge spectroscopy (XANES) is used to study the N environment in bulk GaN and in GaN{y}As{1-y} epilayers on GaAs (001), for y \~5%. Density-functional optimized structures were used to predict XANES via multiple-scattering theory. We obtain striking agreement for pure GaN. An alloy model with nitrogen pairs on Ga accurately predicts the threshold energy, the width of the XANES ``white line'', and features above threshold, for the given X-ray polarization. The presence of N-pairs may point to a role for molecular N_2 in epitaxial growth kinetics.
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Submitted 20 October, 2004;
originally announced October 2004.
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Spin dynamics in semiconductor nanocrystals
Authors:
J. A. Gupta,
D. D. Awschalom,
Al. L. Efros,
A. V. Rodina
Abstract:
Time-resolved Faraday rotation is used to study both transverse and longitudinal spin relaxation in chemically-synthesized CdSe nanocrystals (NCs) 22-80 Angstroms in diameter. The precession of optically-injected spins in a transverse magnetic field occurs at distinct frequencies whose assignment to electron and exciton spins is developed through systematic studies of the size-dependence and the…
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Time-resolved Faraday rotation is used to study both transverse and longitudinal spin relaxation in chemically-synthesized CdSe nanocrystals (NCs) 22-80 Angstroms in diameter. The precession of optically-injected spins in a transverse magnetic field occurs at distinct frequencies whose assignment to electron and exciton spins is developed through systematic studies of the size-dependence and theoretical calculations. It is shown that the transverse spin lifetime is limited by inhomogeneous dephasing to a degree that cannot be accounted for by the NC size distribution alone. Longitudinal spin relaxation in these NCs occurs on several distinct timescales ranging from 100 ps-10 microseconds and exhibits markedly different dependencies on temperature and field in comparison to transverse spin relaxation.
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Submitted 10 April, 2002;
originally announced April 2002.
