Showing 1–12 of 12 results for author: Guina, M

Telecom wavelength single-photon source based on InGaSb/AlGaSb quantum dot technology

Authors: Teemu Hakkarainen, Joonas Hilska, Arttu Hietalahti, Sanna Ranta, Markus Peil, Emmi Kantola, Abhiroop Chellu, Efsane Sen, Jussi-Pekka Penttinen, Mircea Guina

Abstract: Deterministic light sources capable of generating quantum states on-demand at wavelengths compatible with fiber optics and atmospheric transmission are essential for practical applications in quantum communication, photonic quantum computing, and quantum metrology. To this end, single-photon emission at 1500 nm is demonstrated from an InGaSb quantum dot (QD) grown by filling droplet-etched nanohol… ▽ More Deterministic light sources capable of generating quantum states on-demand at wavelengths compatible with fiber optics and atmospheric transmission are essential for practical applications in quantum communication, photonic quantum computing, and quantum metrology. To this end, single-photon emission at 1500 nm is demonstrated from an InGaSb quantum dot (QD) grown by filling droplet-etched nanoholes for the first time. The QD was embedded in a device structure comprising an antimony-based high refractive index contrast back-reflector designed for cryogenic operation and a solid immersion lens for improved photon extraction. The longitudinal optical (LO) phonon assisted excitation of the QD ground state and quasi-resonant excitation of the QD excited state is realized with a novel compact wavelength-tunable power-stabilized semiconductor laser. These direct approaches to exciting a single QD unlock access to its excitonic fine structure. The neutral exciton-biexciton structure exhibits a negative binding energy of 1.4 meV (2.6 nm) and a fine structure splitting of 24.1+/-0.4 ueV. Furthermore, spectrally pure/isolated emission from a charged single exciton state with a single-photon purity of 95 % is achieved with LO phonon assisted two-color excitation. These results represent a major step forward for the use of the novel antimonide-based QD emitters as deterministic quantum light sources in complex quantum secure networks exploiting the wavelength compatibility with standard telecom fibers. △ Less

Submitted 9 April, 2024; originally announced April 2024.

Comments: 12 pages, 4 figures, supplementary information

Multi-type quantum well semiconductor membrane external-cavity surface-emitting lasers (MECSELs) for widely tunable continuous wave operation

Authors: Patrik Rajala, Philipp Tatar-Mathes, Hoy-My Phung, Jesse Koskinen, Sanna Ranta, Mircea Guina, Hermann Kahle

Abstract: Membrane external-cavity surface-emitting lasers (MECSELs) are at the forefront of pushing the performance limits of vertically emitting semiconductor lasers. Their simple idea of using just a very thin (hundreds of nanometers to few microns) gain membrane opens up new possibilities through uniform double side optical pum** and superior heat extraction from the active area. Moreover, these advan… ▽ More Membrane external-cavity surface-emitting lasers (MECSELs) are at the forefront of pushing the performance limits of vertically emitting semiconductor lasers. Their simple idea of using just a very thin (hundreds of nanometers to few microns) gain membrane opens up new possibilities through uniform double side optical pum** and superior heat extraction from the active area. Moreover, these advantages of MECSELs enable more complex band gap engineering possibilities for the active region by the introduction of multiple types of quantum wells (QWs) to a single laser gain structure. In this paper, we present a new design strategy for laser gain structures with several types of QWs. The aim is to achieve broadband gain with relatively high power operation and potentially a flat spectral tuning range. The emphasis in our design is on ensuring sufficient gain over a wide wavelength range, having uniform pump absorption, and restricted carrier mobility between the different quantum wells during laser operation. A full-width half-maximum tuning range of > 70 nm (> 21.7 THz) with more than 125 mW of power through the entire tuning range at room temperature is demonstrated. △ Less

Submitted 11 September, 2023; originally announced September 2023.

Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes

Authors: Lucie Leguay, Abhiroop Chellu, Joonas Hilska, Esperanza Luna, Andrei Schliwa, Mircea Guina, Teemu Hakkarainen

Abstract: Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the development of deterministic sources of high-quality quantum states of light. Such non-classical light sources are essential for quantum information processing and quantum communication. QDs emitting in the telecom wavelengths are especially important for ensuring compatibility with optical fiber systems requ… ▽ More Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the development of deterministic sources of high-quality quantum states of light. Such non-classical light sources are essential for quantum information processing and quantum communication. QDs emitting in the telecom wavelengths are especially important for ensuring compatibility with optical fiber systems required to implement quantum communication networks. To this end, GaSb QDs fabricated by filling local-droplet etched nanoholes are emerging as a viable approach, yet the electronic properties of such nanostructures have not been studied in detail. In this article, an insight into the electronic structure and carrier dynamics in GaSb/AlGaSb QDs is provided through a systematic experimental analysis of their temperature-dependent photoluminescence behavior. A steady-state rate equation model is used to reveal the relevant energy barriers for thermally activated carrier capture and escape processes. Furthermore, results of detailed theoretical simulations of quantum-confined energy states using the multi-band k.p model and the effective mass method are presented. The purpose of the simulations is to reveal the direct and indirect energy states, carrier wavefunctions, and allowed optical transitions for GaSb QDs with different physical dimensions. △ Less

Submitted 29 August, 2023; originally announced August 2023.

Comments: Lucie Leguay and Abhiroop Chellu contributed equally to this work

Strain-free GaSb quantum dots as single-photon sources in the telecom S-band

Authors: Johannes Michl, Giora Peniakov, Andreas Pfenning, Joonas Hilska, Abhiroop Chellu, Andreas Bader, Mircea Guina, Sven Höfling, Teemu Hakkarainen, Tobias Huber-Loyola

Abstract: Creating single photons in the telecommunication wavelength range from semiconductor quantum dots (QDs) and interfacing them with spins of electrons or holes has been of high interest in recent years, with research mainly focusing on indium based QDs. However, there is not much data on the optical and spin properties of galliumantimonide (GaSb) QDs, despite it being a physically rich system with a… ▽ More Creating single photons in the telecommunication wavelength range from semiconductor quantum dots (QDs) and interfacing them with spins of electrons or holes has been of high interest in recent years, with research mainly focusing on indium based QDs. However, there is not much data on the optical and spin properties of galliumantimonide (GaSb) QDs, despite it being a physically rich system with an indirect to direct bandgap crossover in the telecom wavelength range. Here, we investigate the (quantum-) optical properties of GaSb quantum dots, which are fabricated by filling droplet-etched nanoholes in an aluminum-galliumantimonide (AlGaSb) matrix. We observe photoluminescence (PL) features from isolated and highly symmetric QDs that exhibit narrow linewidth in the telecom S-band and show an excitonic fine structure splitting of $ΔE=(12.0\pm0.5)μeV$. Moreover, we perform time-resolved measurements of the decay characteristics of an exciton and measure the second-order photon autocorrelation function of the charge complex to $g^{(2)}(0)=0.16\pm0.02$, revealing clear antibunching and thus proving the capability of this material platform to generate non-classical light. △ Less

Submitted 7 May, 2023; originally announced May 2023.

Widely tunable 2 $μ$m hybrid laser using GaSb semiconductor optical amplifiers and Si3N4 photonics integrated reflector

Authors: Nouman Zia, Samu-Pekka Ojanen, Jukka Viheriala, Eero Koivusalo, Joonas Hilska, Mircea Guina

Abstract: Tunable lasers emitting at a 2-3 $μ$m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si$_3$N$_4$ photonic integrated circuits offers an attractive platform. Herein, we exploit the low-loss features of Si$_3$N$_4$ waveguides and demonstrate a hybrid laser comprising a… ▽ More Tunable lasers emitting at a 2-3 $μ$m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si$_3$N$_4$ photonic integrated circuits offers an attractive platform. Herein, we exploit the low-loss features of Si$_3$N$_4$ waveguides and demonstrate a hybrid laser comprising a GaSb gain chip with an integrated tunable Si$_3$N$_4$ Vernier mirror. At room temperature, the laser exhibited a maximum output power of 15 mW and a tuning range of 80 nm (1937-2017 nm). The low-loss performance of several fundamental Si$_3$N$_4$ building blocks for photonic integrated circuits is also validated. More specifically, the single-mode waveguide exhibit transmission loss as low as 0.15 dB/cm, the 90$^\circ$ bend has 0.008 dB loss, and the 50/50 Y-branch has an insertion loss of 0.075 dB. △ Less

Submitted 3 November, 2022; originally announced November 2022.

Watt-level blue light for precision spectroscopy, laser cooling and trap** of strontium and cadmium atoms

Authors: Jonathan N. Tinsley, Satvika Bandarupally, Jussi-Pekka Penttinen, Shamaila Manzoor, Sanna Ranta, Leonardo Salvi, Mircea Guina, Nicola Poli

Abstract: High-power and narrow-linewidth laser light is a vital tool for atomic physics, being used for example in laser cooling and trap** and precision spectroscopy. Here we produce Watt-level laser radiation at 457.49 nm and 460.86 nm of respective relevance for the cooling transitions of cadmium and strontium atoms. This is achieved via the frequency doubling of a kHz-linewidth vertical-external-cavi… ▽ More High-power and narrow-linewidth laser light is a vital tool for atomic physics, being used for example in laser cooling and trap** and precision spectroscopy. Here we produce Watt-level laser radiation at 457.49 nm and 460.86 nm of respective relevance for the cooling transitions of cadmium and strontium atoms. This is achieved via the frequency doubling of a kHz-linewidth vertical-external-cavity surface-emitting laser (VECSEL), which is based on a novel gain chip design enabling lasing at > 2 W in the 915-928 nm region. Following an additional doubling stage, spectroscopy of the $^1S_0\to{}^1P_1$ cadmium transition at 228.89 nm is performed on an atomic beam, with all the transitions from all eight natural isotopes observed in a single continuous sweep of more than 4 GHz in the deep ultraviolet. The absolute value of the transition frequency of Cd-114 and the isotope shifts relative to this transition are determined, with values for some of these shifts provided for the first time △ Less

Submitted 24 April, 2021; originally announced April 2021.

Comments: 14 pages, 5 figures, 2 tables

Journal ref: Optics Express Vol. 29, Issue 16, pp. 25462-25476 (2021)

VECSEL systems for quantum information processing with trapped beryllium ions

Authors: S. C. Burd, J. -P. Penttinen, P. -Y. Hou, H. M. Knaack, S. Ranta, M. Mäki, E. Kantola, M. Guina, D. H. Slichter, D. Leibfried, A. C. Wilson

Abstract: Two vertical-external-cavity surface-emitting laser (VECSEL) systems producing ultraviolet (UV) radiation at 235 nm and 313 nm are demonstrated. The systems are suitable for quantum information processing applications with trapped beryllium ions. Each system consists of a compact, single-frequency, continuous-wave VECSEL producing high-power near-infrared light, tunable over tens of nanometers. On… ▽ More Two vertical-external-cavity surface-emitting laser (VECSEL) systems producing ultraviolet (UV) radiation at 235 nm and 313 nm are demonstrated. The systems are suitable for quantum information processing applications with trapped beryllium ions. Each system consists of a compact, single-frequency, continuous-wave VECSEL producing high-power near-infrared light, tunable over tens of nanometers. One system generates 2.4 W at 940 nm, using a gain mirror based on GaInAs/GaAs quantum wells, which is converted to 54 mW of 235 nm light for photoionization of neutral beryllium atoms. The other system uses a novel gain mirror based on GaInNAs/GaAs quantum-wells, enabling wavelength extension with manageable strain in the GaAs lattice. This system generates 1.6 W at 1252 nm, which is converted to 41 mW of 313 nm light that is used to laser cool trapped $^{9}$Be$^{+}$ ions and to implement quantum state preparation and detection. The 313 nm system is also suitable for implementing high-fidelity quantum gates, and more broadly, our results extend the capabilities of VECSEL systems for applications in atomic, molecular, and optical physics. △ Less

Submitted 19 March, 2020; originally announced March 2020.

Comments: 8 pages, 7 figures

Journal ref: JOSA B 40, 773 (2023)

Epitaxial phases of high Bi content GaSbBi alloys

Authors: Joonas Hilska, Eero Koivusalo, Janne Puustinen, Soile Suomalainen, Mircea Guina

Abstract: GaSbBi alloys have recently emerged as attractive materials for mid-infrared optoelectronics owing to strong band gap reduction enabled by Bi incorporation into the GaSb matrix. The fundamental understanding of the epitaxial process required to demonstrate high quality crystals is in an early-developmental phase. From this perspective, we report on the key role played by the Sb/Ga flux ratio in co… ▽ More GaSbBi alloys have recently emerged as attractive materials for mid-infrared optoelectronics owing to strong band gap reduction enabled by Bi incorporation into the GaSb matrix. The fundamental understanding of the epitaxial process required to demonstrate high quality crystals is in an early-developmental phase. From this perspective, we report on the key role played by the Sb/Ga flux ratio in controlling the structural quality and incorporation of high Bi content (up to 14.5 %-Bi), revealing three distinct epitaxial phases. The first phase (below stoichiometric Sb/Ga) exhibits Ga-Bi compound droplets, low crystal quality, and reduced Bi content. At the second phase (above stoichiometric Sb/Ga), the crystal exhibits smooth surfaces and excellent crystallinity with efficient Bi incorporation. The last phase corresponds to exceeding a Sb/Ga threshold that leads to reduced Bi incorporation, Bi droplets and degraded crystallinity. This threshold value that defines the optimal growth window is controlled by the temperature as well as the Bi/Ga ratio. Increasing temperature increases the threshold, albeit simultaneously reducing Bi incorporation. Conversely, increasing the Bi/Ga flux ratio increases Bi incorporation, while narrowing down and ultimately closing the window. This study provides a general framework enabling development of high quality GaSbBi heterostructures for emerging mid-infrared optoelectronics. △ Less

Submitted 9 January, 2019; originally announced January 2019.

Comments: 14 pages, 3 figures

Journal ref: J. Cryst. Growth 516 (2019) 67

Light-trap** enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off

Authors: F Cappelluti, D Kim, M van Eerden, AP Cédola, T Aho, G Bissels, F Elsehrawy, J Wu, H Liu, P Mulder, G Bauhuis, J Schermer, T Niemi, M Guina

Abstract: We report thin-film InAs/GaAs quantum dot (QD) solar cells with $n-i-p{+}$ deep junction structure and planar back reflector fabricated by epitaxial lift-off (ELO) of full 3-inch wafers. External quantum efficiency measurements demonstrate twofold enhancement of the QD photocurrent in the ELO QD cell compared to the wafer-based QD cell. In the GaAs wavelength range, the ELO QD cell perfectly prese… ▽ More We report thin-film InAs/GaAs quantum dot (QD) solar cells with $n-i-p{+}$ deep junction structure and planar back reflector fabricated by epitaxial lift-off (ELO) of full 3-inch wafers. External quantum efficiency measurements demonstrate twofold enhancement of the QD photocurrent in the ELO QD cell compared to the wafer-based QD cell. In the GaAs wavelength range, the ELO QD cell perfectly preserves the current collection efficiency of the baseline single-junction ELO cell. We demonstrate by full-wave optical simulations that integrating a micro-patterned diffraction grating in the ELO cell rearside provides more than tenfold enhancement of the near-infrared light harvesting by QDs. Experimental results are thoroughly discussed with the help of physics-based simulations to single out the impact of QD dynamics and defects on the cell photovoltaic behavior. It is demonstrated that non radiative recombination in the QD stack is the bottleneck for the open circuit voltage ($V_{oc}$) of the reported devices. More important, our theoretical calculations demonstrate that the $V_{oc}$ offest of 0.3 V from the QD ground state identified by \emph{Tanabe et al., 2012}, from a collection of experimental data of high quality III-V QD solar cells is a reliable - albeit conservative - metric to gauge the attainable $V_{oc}$ and to quantify the scope for improvement by reducing non radiative recombination. Provided that material quality issues are solved, we demonstrate - by transport and rigorous electromagnetic simulations - that light-trap** enhanced thin-film cells with twenty InAs/GaAs QD layers reach efficiency higher than 28\% under unconcentrated light, ambient temperature. If photon recycling can be fully exploited, 30\% efficiency is deemed to be feasible. △ Less

Submitted 25 May, 2018; originally announced May 2018.

Journal ref: Solar Energy Materials and Solar Cells, Volume 181, July 2018, Pages 83-92

Field emission from self-catalyzed GaAs nanowires

Authors: Filippo Giubileo, Antonio Di Bartolomeo, Laura Iemmo, Giuseppe Luongo, Maurizio Passacantando, Eero Koivusalo, Teemu V. Hakkarainen, Mircea Guina

Abstract: We report observation of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements are realized inside a scanning electron microscope chamber with nano-controlled tungsten tip functioning as anode. Experimental data are analyzed in the framework of Fowler-Nordheim theory. We demonstrate stable current up to 10$^{-7}$ A emitted from the tip of single nanowire, with field… ▽ More We report observation of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements are realized inside a scanning electron microscope chamber with nano-controlled tungsten tip functioning as anode. Experimental data are analyzed in the framework of Fowler-Nordheim theory. We demonstrate stable current up to 10$^{-7}$ A emitted from the tip of single nanowire, with field enhancement factor $β$ up to 112 at anode-cathode distance d=350 nm. A linear dependence of $β$ on the anode-cathode distance is experimentally found. We also show that the presence of a Ga catalyst droplet suppresses the emission of current from the nanowire tip. This allows detection of field emission from the nanowire sidewalls, which occurs with reduced field enhancement factor and stability. This study further extends the GaAs technology to vacuum electronics applications. △ Less

Submitted 14 September, 2017; originally announced September 2017.

Comments: Accepted for publication in Nanomaterials

Journal ref: Nanomaterials 7, Issue 9, 2017, Article number 275

Structural investigation of uniform ensembles of self-catalyzed GaAs nanowires fabricated by a lithography-free technique

Authors: Eero Koivusalo, Teemu Hakkarainen, Mircea Guina

Abstract: Structural analysis of self-catalyzed GaAs nanowires (NWs) grown on lithography-free oxide patterns is described with insight on their growth kinetics. Statistical analysis of templates and NWs in different phases of the growth reveals extremely high dimensional uniformity due to a combination of uniform nucleation sites, lack of secondary nucleation of NWs, and self-regulated growth under the eff… ▽ More Structural analysis of self-catalyzed GaAs nanowires (NWs) grown on lithography-free oxide patterns is described with insight on their growth kinetics. Statistical analysis of templates and NWs in different phases of the growth reveals extremely high dimensional uniformity due to a combination of uniform nucleation sites, lack of secondary nucleation of NWs, and self-regulated growth under the effect of nucleation antibunching. Consequently, we observed the first evidence of sub-Poissonian GaAs NW length distributions. The high phase purity of the NWs is demonstrated using complementary transmission electron microscopy (TEM) and high-resolution x-ray diffractometry (HR-XRD). It is also shown that, while NWs are to large extent defect-free with up to 2 um long twin-free zincblende segments, low temperature micro-photoluminescence spectroscopy reveals that the proportion of structurally disordered sections can be detected from their spectral properties. △ Less

Submitted 7 March, 2017; v1 submitted 16 January, 2017; originally announced January 2017.

Comments: 17 pages, 7 figures

VECSEL systems for generation and manipulation of trapped magnesium ions

Authors: Shaun C. Burd, David T. C. Allcock, Tomi Leinonen, Jussi-Pekka Penttinen, Daniel H. Slichter, Raghavendra Srinivas, Andrew C. Wilson, Robert Jördens, Mircea Guina, Dietrich Leibfried, David J. Wineland

Abstract: Experiments in atomic, molecular, and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power, and intensity stability. Vertical external-cavity surface-emitting lasers (VECSELs), when combined with nonlinear frequency conversion, can potentially replace many of the laser systems currently in use. Here we present and characteriz… ▽ More Experiments in atomic, molecular, and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power, and intensity stability. Vertical external-cavity surface-emitting lasers (VECSELs), when combined with nonlinear frequency conversion, can potentially replace many of the laser systems currently in use. Here we present and characterize VECSEL systems that can perform all laser-based tasks for quantum information processing experiments with trapped magnesium ions. For photoionization of neutral magnesium, 570.6$\,$nm light is generated with an intracavity frequency-doubled VECSEL containing a lithium triborate (LBO) crystal for second harmonic generation. External frequency doubling produces 285.3$\,$nm light for resonant interaction with the $^{1}S_{0}\leftrightarrow$ $^{1}P_{1}$ transition of neutral Mg. Using an externally frequency-quadrupled VECSEL, we implement Doppler cooling of $^{25}$Mg$^{+}$ on the 279.6$\,$nm $^{2}S_{1/2}\leftrightarrow$ $^{2}P_{3/2}$ cycling transition, repum** on the 280.4$\,$nm $^{2}S_{1/2}\leftrightarrow$ $^{2}P_{1/2}$ transition, coherent state manipulation, and resolved sideband cooling close to the motional ground state. Our systems serve as prototypes for applications in AMO requiring single-frequency, power-scalable laser sources at multiple wavelengths. △ Less

Submitted 10 June, 2016; originally announced June 2016.

Comments: 6 pages, 9 figures

Journal ref: Optica 3, 1294 (2016)