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Unexplored reactivity of (Sn)2- Oligomers with transition metals in low-temperature solid-state reactions
Authors:
Shunsuke Sasaki,
Melanie Lesault,
Elodie Grange,
Etienne Janod,
Benoît Corraze,
Sylvian Cadars,
Maria Teresa Caldes,
Catherine Guillot-Deudon,
Stéphane Jobic,
Laurent Cario
Abstract:
Chalcogenides (Q = S, Se, Te), one of the most important family of materials in solid-state chemistry, differ from oxides by their ability to form covalently-bonded (Qn)2- oligomers. Each chalcogen atom within such entity fulfills the octet rule by sharing electrons with other chalcogen atoms but some antibonding levels are vacant. This makes these oligomers particularly suited for redox reactions…
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Chalcogenides (Q = S, Se, Te), one of the most important family of materials in solid-state chemistry, differ from oxides by their ability to form covalently-bonded (Qn)2- oligomers. Each chalcogen atom within such entity fulfills the octet rule by sharing electrons with other chalcogen atoms but some antibonding levels are vacant. This makes these oligomers particularly suited for redox reactions in solid state, namely towards elemental metals with a low redox potential that may be oxidized. We recently used this strategy to design, at low temperature and in an orientated manner, materials with 2D infinite layers through the topochemical insertion of copper into preformed precursors containing (S2)2- and/or (Se2)2- dimers (i.e. La2O2S2, Ba2F2S2 and LaSe2). Herein we extend the validity of the concept to the redox activity of (S2)2- and (S3)2- oligomers towards 3d transition metal elements (Cu, Ni, Fe) and highlight the strong relationship between the structures of the precursors, BaS2 and BaS3, and the products, BaCu2S2, BaCu4S3, BaNiS2 and BaFe2S3. Clearly, beyond the natural interest for the chemical reactivity of oligomers to generate compounds, this soft chemistry route may conduct to the rational conception of materials with a predicted crystal structure.
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Submitted 7 January, 2019;
originally announced January 2019.
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Evidence for a spinon Fermi surface in the triangular S=1 quantum spin liquid Ba$_3$NiSb$_2$O$_9$
Authors:
B. Fak,
S. Bieri,
E. Canevet,
L. Messio,
C. Payen,
M. Viaud,
C. Guillot-Deudon,
C. Darie,
J. Ollivier,
P. Mendels
Abstract:
Inelastic neutron scattering is used to study the low-energy magnetic excitations in the spin-1 triangular lattice of the 6H-B phase of Ba$_3$NiSb$_2$O$_9$. We study two powder samples: Ba$_3$NiSb$_2$O$_9$ synthesized under high pressure and Ba$_{2.5}$Sr$_{0.5}$NiSb$_2$O$_9$ in which chemical pressure stabilizes the 6H-B structure. The measured excitation spectra show broad gapless and nondispersi…
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Inelastic neutron scattering is used to study the low-energy magnetic excitations in the spin-1 triangular lattice of the 6H-B phase of Ba$_3$NiSb$_2$O$_9$. We study two powder samples: Ba$_3$NiSb$_2$O$_9$ synthesized under high pressure and Ba$_{2.5}$Sr$_{0.5}$NiSb$_2$O$_9$ in which chemical pressure stabilizes the 6H-B structure. The measured excitation spectra show broad gapless and nondispersive continua at characteristic wave vectors. Our data rules out most theoretical scenarios that have previously been proposed for this phase, and we find that it is well described by an exotic quantum spin liquid with three flavors of unpaired fermionic spinons, forming a large spinon Fermi surface.
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Submitted 1 February, 2017; v1 submitted 12 October, 2016;
originally announced October 2016.
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Universal electric-field-driven resistive transition in narrow-gap Mott insulators
Authors:
Pablo Stoliar,
Laurent Cario,
Etienne Janod,
Benoit Corraze,
Catherine Guillot-Deudon,
Sabrina Salmon-Bourmand,
Vincent Guiot,
Julien Tranchant,
Marcelo Rozenberg
Abstract:
One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott insulator-to-metal transition (IMT), which is driven by strong electronic correlation effects, holds the promise of a commutation speed set by a quantum transition, and with n…
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One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott insulator-to-metal transition (IMT), which is driven by strong electronic correlation effects, holds the promise of a commutation speed set by a quantum transition, and with negligible power dissipation. In this context, one possible route to control the Mott transition is to electrostatically dope the systems using strong dielectrics, in FET-like devices. Another possibility is through resistive switching, that is, to induce the insulator-to-metal transition by strong electric pulsing. This action brings the correlated system far from equilibrium, rendering the exact treatment of the problem a difficult challenge. Here, we show that existing theoretical predictions of the off-equilibrium manybody problem err by orders of magnitudes, when compared to experiments that we performed on three prototypical narrow gap Mott systems V2-xCrxO3, NiS2-xSex and GaTa4Se8, and which also demonstrate a striking universality of this Mott resistive transition (MRT). We then introduce and numerically study a model based on key theoretically known physical features of the Mott phenomenon in the Hubbard model. We find that our model predictions are in very good agreement with the observed universal MRT and with a non-trivial timedelay electric pulsing experiment, which we also report. Our study demonstrates that the MRT can be associated to a dynamically directed avalanche.
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Submitted 20 September, 2013;
originally announced September 2013.
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Singlet Ground State of the Quantum Antiferromagnet Ba3CuSb2O9
Authors:
J. A. Quilliam,
F. Bert,
E. Kermarrec,
C. Payen,
C. Guillot-Deudon,
P. Bonville,
C. Baines,
H. Luetkens,
P. Mendels
Abstract:
We present local probe results on the honeycomb lattice antiferromagnet Ba3CuSb2O9. Muon spin relaxation measurements in zero field down to 20 mK show unequivocally that there is a total absence of spin freezing in the ground state. Sb NMR measurements allow us to track the intrinsic susceptibility of the lattice, which shows a maximum at around 55 K and drops to zero in the low-temperature limit.…
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We present local probe results on the honeycomb lattice antiferromagnet Ba3CuSb2O9. Muon spin relaxation measurements in zero field down to 20 mK show unequivocally that there is a total absence of spin freezing in the ground state. Sb NMR measurements allow us to track the intrinsic susceptibility of the lattice, which shows a maximum at around 55 K and drops to zero in the low-temperature limit. The spin-lattice relaxation rate shows two characteristic energy scales, including a field-dependent crossover to exponential low-temperature behavior, implying gapped magnetic excitations.
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Submitted 27 July, 2012;
originally announced July 2012.
