-
Magnetic evolution of Cr$_2$Te$_3$ epitaxially grown on graphene with post-growth annealing
Authors:
Quentin Guillet,
Hervé Boukari,
Fadi Choueikani,
Philippe Ohresser,
Abdelkarim Ouerghi,
Florie Mesple,
Vincent T. Renard,
Jean-François Jacquot,
Denis Jalabert,
Céline Vergnaud,
Frédéric Bonell,
Alain Marty,
Matthieu Jamet
Abstract:
Two-dimensional and van der Waals ferromagnets are ideal platform to study low dimensional magnetism and proximity effects in van der Waals heterostructures. Their ultimate two dimensional character offers also the opportunity to easily adjust their magnetic properties using strain or electric fields. Among 2D ferromagnets, the Cr$_{1+x}$Te$_2$ compounds with $x$=0-1 are very promising because the…
▽ More
Two-dimensional and van der Waals ferromagnets are ideal platform to study low dimensional magnetism and proximity effects in van der Waals heterostructures. Their ultimate two dimensional character offers also the opportunity to easily adjust their magnetic properties using strain or electric fields. Among 2D ferromagnets, the Cr$_{1+x}$Te$_2$ compounds with $x$=0-1 are very promising because their magnetic properties depend on the amount of self-intercalated Cr atoms between pure CrTe$_2$ layers and the Curie temperature (T$_C$) can reach room temperature for certain compositions. Here, we investigate the evolution of the composition, structural and magnetic properties of thin Cr$_{1.33}$Te$_2$ (Cr$_2$Te$_3$) films epitaxially grown on graphene upon annealing. We observe a transition above 450°C from the Cr$_{1.33}$Te$_2$ phase with perpendicular magnetic anisotropy and a T$_C$ of 180 K to a composition close to Cr$_{1.39}$Te$_2$ with in-plane magnetic anisotropy and a T$_C$ of 240-250 K. This phase remains stable up to 650°C above which a pure Cr film starts to form. This work demonstrates the complex interplay between intercalated Cr, lattice parameters and magnetic properties in Cr$_{1+x}$Te$_2$ compounds.
△ Less
Submitted 9 May, 2024;
originally announced May 2024.
-
Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials
Authors:
Quentin Guillet,
Libor Vojacek,
Djordje Dosenovic,
Fatima Ibrahim,
Herve Boukari,
**g Li,
Fadi Choueikani,
Philippe Ohresser,
Abdelkarim Ouerghi,
Florie Mesple,
Vincent Renard,
Jean-Francois Jacquot,
Denis Jalabert,
Hanako Okuno,
Mairbek Chshiev,
Celine Vergnaud,
Frederic Bonell,
Alain Marty,
Matthieu Jamet
Abstract:
Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA a…
▽ More
Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA and TC might be adjusted in ultrathin films by engineering composition, strain, or applying an electric field. In this work, we demonstrate the molecular beam epitaxy (MBE) growth of vdW heterostructures of five-monolayer quasi-freestanding Cr2Te3 on three classes of 2D materials: graphene (semimetal), WSe2 (semiconductor) and Bi2Te3 (topological insulator). By combining structural and chemical analysis down to the atomic level with ab initio calculations, we confirm the single crystalline character of Cr2Te3 films on the 2D materials with sharp vdW interfaces. They all exhibit PMA and TC close to the bulk Cr2Te3 value of 180 K. Ab initio calculations confirm this PMA and show how its strength depends on strain. Finally, Hall measurements reveal a strong anomalous Hall effect, which changes sign at a given temperature. We theoretically explain this effect by a sign change of the Berry phase close to the Fermi level. This transition temperature depends on the 2D material in proximity, notably as a consequence of charge transfer. MBE-grown Cr2Te3/2D material bilayers constitute model systems for the further development of spintronic devices combining PMA, large spin-orbit coupling and sharp vdW interface.
△ Less
Submitted 6 March, 2023;
originally announced March 2023.
-
Influence of magnetic domain walls on all-optical magnetic toggle switching in a ferrimagnetic GdFe film
Authors:
Rahil Hosseinifar,
Evangelos Golias,
Ivar Kumberg,
Quentin Guillet,
Karl Frischmuth,
Sangeeta Thakur,
Mario Fix,
Manfred Albrecht,
Florian Kronast,
Wolfgang Kuch
Abstract:
We present a microscopic magnetic domain imaging study of single-shot all-optical magnetic toggle switching of a ferrimagnetic Gd$_{26}$Fe$_{74}$ film with out-of-plane easy axis of magnetization by x-ray magnetic circular dichroism photoelectron emission microscopy. Individual linearly polarized laser pulses of 800 nm wavelength and 100 fs duration above a certain threshold fluence reverse the sa…
▽ More
We present a microscopic magnetic domain imaging study of single-shot all-optical magnetic toggle switching of a ferrimagnetic Gd$_{26}$Fe$_{74}$ film with out-of-plane easy axis of magnetization by x-ray magnetic circular dichroism photoelectron emission microscopy. Individual linearly polarized laser pulses of 800 nm wavelength and 100 fs duration above a certain threshold fluence reverse the sample magnetization, independent of the magnetization direction, the so-called toggle switching. Local deviations from this deterministic behavior close to magnetic domain walls are studied in detail. Reasons for nondeterministic toggle switching are related to extrinsic effects, caused by pulse-to-pulse variations of the exciting laser system, and to intrinsic effects related to the magnetic domain structure of the sample. The latter are, on the one hand, caused by magnetic domain wall elasticity, which leads to a reduction of the domain-wall length at sharp tipped features. These features appear after the optical switching at positions where the line of constant threshold fluence in the Gaussian footprint of the laser pulse comes close to an already-existing domain wall. On the other hand, we identify the presence of laser-induced domain-wall motion in the toggle-switching event as a further cause for local deviations from purely deterministic toggle switching.
△ Less
Submitted 2 January, 2022; v1 submitted 6 July, 2021;
originally announced July 2021.
-
Ultrafast optically induced ferromagnetic state in an elemental antiferromagnet
Authors:
E. Golias,
I. Kumberg,
I. Gelen,
S. Thakur,
J. Gördes,
R. Hosseinifar,
Q. Guillet,
J. K. Dewhurst,
S. Sharma,
C. Schüßler-Langeheine,
N. Pontius,
W. Kuch
Abstract:
We present evidence for an ultrafast optically induced ferromagnetic alignment of antiferromagnetic Mn in Co/Mn multilayers. We observe the transient ferromagnetic signal at the arrival of the pump pulse at the Mn L$_3$ resonance using x-ray magnetic circular dichroism in reflectivity. The timescale of the effect is comparable to the duration of the excitation and occurs before the magnetization i…
▽ More
We present evidence for an ultrafast optically induced ferromagnetic alignment of antiferromagnetic Mn in Co/Mn multilayers. We observe the transient ferromagnetic signal at the arrival of the pump pulse at the Mn L$_3$ resonance using x-ray magnetic circular dichroism in reflectivity. The timescale of the effect is comparable to the duration of the excitation and occurs before the magnetization in Co is quenched. Theoretical calculations point to the imbalanced population of Mn unoccupied states caused by the Co interface for the emergence of this transient ferromagnetic state.
△ Less
Submitted 12 February, 2021; v1 submitted 29 June, 2020;
originally announced June 2020.
