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Polarization spontaneous and piezo: fundamentals and their implementation in ab initio calculations
Authors:
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Jacek Piechota,
Izabella Grzegory,
Eva Monroy,
Agata Kaminska,
Stanislaw Krukowski
Abstract:
Fundamental properties of spontaneous and piezo polarization are reformulated and critically reviewed. It was demonstrated that Landau definition of polarization as a dipole density could be used to the infinite systems. The difference between the bulk polarization and surface polarity are distinguished thus creating clear identification of both components. The local model of spontaneous polarizat…
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Fundamental properties of spontaneous and piezo polarization are reformulated and critically reviewed. It was demonstrated that Landau definition of polarization as a dipole density could be used to the infinite systems. The difference between the bulk polarization and surface polarity are distinguished thus creating clear identification of both components. The local model of spontaneous polarization was created and used to calculate spontaneous polarization as the electric dipole density. It was shown that the proposed local model correctly predicts c-axis spontaneous polarization values of the nitride wurtzite semiconductors. It was also shown that the proposed model predicts zero polarization in the plane perpendicular to the c-axis, in accordance with symmetry requirements. In addition, the model results are in accordance with polarization equal to zero for zinc blende lattice. These data confirm the basic correctness of the proposed model. The spontaneous polarization values obtained for all wurtzite III nitrides (BN, AlN, GaN and InN) are in basic agreement with the earlier calculations using Berry phase and slab models of Bernardini et al. {Bernardini et al. Phys Rev B 56 (2001) R10024 & 63 (2001) 193201} but not with Dreyer et al. {Dreyer et al. Phys. Rev X 6 (2016) 021038}. Wurtzite nitride superlattices ab initio calculations were performed to derive polarization-induced fields in the coherently strained lattices showing good agreement with the polarization values. The strained superlattice data were used to determine the piezoelectric parameters of wurtzite nitrides obtaining the values that were in basic agreement with the earlier data. Zinc blende superlattices were also modeled using ab initio calculations showing results that are in agreement with the absence of polarization of all nitrides in zinc blende symmetry.
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Submitted 1 July, 2024;
originally announced July 2024.
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Coulomb contribution to Shockley-Read-Hall (SRH) recombination
Authors:
Konrad Sakowski,
Pawel Strak,
Pawel Kempisty,
Jacek Piechota,
Izabella Grzegory,
Piotr Perlin,
Eva Monroy,
Agata Kaminska,
Stanislaw Krukowski
Abstract:
Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates.…
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Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that in the typical semiconductor device or semiconductor medium, the SRH recombination cannot be neglected at low temperatures. The SRH is more effective in the case of low doped semiconductors. Effective screening by mobile carrier density could reduce the effect, leading to SRH rate increase.
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Submitted 26 January, 2024; v1 submitted 18 October, 2023;
originally announced October 2023.
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Macrosteps dynamics and the growth of crystals and epitaxial layers
Authors:
Stanislaw Krukowski,
Konrad Sakowski,
Paweł Strak,
Paweł Kempisty,
Jacek Piechota,
Izabella Grzegory
Abstract:
Step pattern stability of the vicinal surfaces during growth was analyzed using various surface kinetic models. It was shown that standard analysis of the vicinal surfaces provides no indication on the possible step coalescence and therefore could not be used to elucidate macrostep creation during growth. A scenario of the instability, leading go macrostep creation was based on the dynamics of the…
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Step pattern stability of the vicinal surfaces during growth was analyzed using various surface kinetic models. It was shown that standard analysis of the vicinal surfaces provides no indication on the possible step coalescence and therefore could not be used to elucidate macrostep creation during growth. A scenario of the instability, leading go macrostep creation was based on the dynamics of the step train. The critical is step motion at the rear of the train which leads to double and multiple step creation. The condition is that the step density ratio in and out of the train lower than 2 prevents double step formation irrespective of the kinetics. For higher step density ratio low density of the step promotes single step stability. Fast step kinetics from lower terrace stabilizes the single steps slow (high barrier) is promoting step coalescence. The incorporation kinetics from upper terrace role is close to neutral. The creation of double step creates slow the step in front to accelerate and catch the previous double step while those behind catch up the double step creating multistep structure. The multistep are not mobile as the alimentation leads to emission of single step which moves forward. The final structure consist of macrosteps and superterraces with the number of single steps moving forward. Thus the single step motion is essential crystal growth mode despite the presence of the macrosteps. The macrostep are prone to creation of the overhangs which results from surface dynamics coupling to im**ement from the mother phase. The angular preferential access of the bulk material to the macrostep edge, leads to diffusive instability. Therefore it is expected that harmful influence of the macrosteps by creation of inclusions and dislocation is stronger during growth from the liquid phase.
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Submitted 11 January, 2023; v1 submitted 22 March, 2022;
originally announced March 2022.
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Polarization do** ab initio verification of the concept charge conservation and nonlocality
Authors:
Ashfaq Ahmad,
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Jacek Piechota,
Yoshihiro Kangawa,
Izabella Grzegory,
Michal Leszczynski,
Zbigniew R. Zytkiewicz,
Grzegorz Muziol,
Eva Monroy,
Stanislaw Krukowski,
Agata Kaminska
Abstract:
In this work, we study the emergence of polarization do** in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allo…
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In this work, we study the emergence of polarization do** in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allows obtaining technically viable mobile charge density for optoelectronic devices without impurity do** (donors or acceptors). Therefore, it provides an additional tool for the device designer, with the potential to attain high conductivities: high carrier concentrations can be obtained even in materials with high dopant ionization energies, and the mobility is not limited by scattering at ionized impurities.
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Submitted 22 March, 2022; v1 submitted 2 June, 2021;
originally announced June 2021.
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The new insight into gallium nitride (GaN) melting under pressure
Authors:
Sylwester Porowski,
Bogdan Sadovyi,
Stanislaw Gierlotka,
Sylwester J. Rzoska,
Izabella Grzegory,
Igor Petrusha,
Vladimir Turkevich,
Denys Stratiichuk
Abstract:
Results solving the long standing puzzle regarding the phase diagram and the pressure evolution of the melting temperature Tm(P) of gallium nitride (GaN), the most promising semiconducting material for innovative modern electronic applications, are presented. The analysis is based on (i) studies of the decomposition curve in P-T plane up to challenging P equal 9 GPa, (ii) novel method enabling Tm(…
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Results solving the long standing puzzle regarding the phase diagram and the pressure evolution of the melting temperature Tm(P) of gallium nitride (GaN), the most promising semiconducting material for innovative modern electronic applications, are presented. The analysis is based on (i) studies of the decomposition curve in P-T plane up to challenging P equal 9 GPa, (ii) novel method enabling Tm(P) determination despite the earlier decomposition, and (iii) the pressure invariant parameterization of Tm(P) curve, showing the reversal melting for P greater-than 22 GPa. This is linked to a possible fluid-fluid crossover under extreme pressures and temperatures. The importance of results for the development of GaN based technologies is indicated.
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Submitted 14 August, 2014;
originally announced August 2014.
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Properties of metal-insulator transition and electron spin relaxation in GaN:Si
Authors:
A. Wolos,
Z. Wilamowski,
M. Piersa,
W. Strupinski,
B. Lucznik,
I. Grzegory,
S. Porowski
Abstract:
We investigate properties of do**-induced metal-insulator transition in GaN:Si by means of electron spin resonance and Hall effect. While increasing the do** concentration, Si-related bands are formed below the bottom of the GaN conduction band. The D0 band of single-occupied Si donor sites is centered 27 meV below the bottom of the GaN conduction band, the D- band of double-occupied Si states…
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We investigate properties of do**-induced metal-insulator transition in GaN:Si by means of electron spin resonance and Hall effect. While increasing the do** concentration, Si-related bands are formed below the bottom of the GaN conduction band. The D0 band of single-occupied Si donor sites is centered 27 meV below the bottom of the GaN conduction band, the D- band of double-occupied Si states at 2.7 meV below the bottom of the GaN conduction band. Strong dam** of the magnetic moment occurs due to filling of the D- states at Si concentrations approaching the metal-insulator transition. Simultaneously, shortening of electron spin relaxation time due to limited electron lifetime in the single-occupied D0 band is observed. The metal-insulator transition occurs at the critical concentration of uncompensated donors equal to about 1.6 * 10^18 cm^-3. Electronic states in metallic samples beyond the metal-insulator transition demonstrate non-magnetic character of double-occupied states.
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Submitted 22 December, 2010;
originally announced December 2010.
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Rashba field in GaN
Authors:
A. Wolos,
Z. Wilamowski,
C. Skierbiszewski,
A. Drabinska,
B. Lucznik,
I. Grzegory,
S. Porowski
Abstract:
We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large difference in spin-orbit coupling between bulk material and heterostructures. We observe coupled plasmon-cyclotron resonance from the two-dimensional electron gas, but no spin resonance, being consistent with large zero-field s…
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We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large difference in spin-orbit coupling between bulk material and heterostructures. We observe coupled plasmon-cyclotron resonance from the two-dimensional electron gas, but no spin resonance, being consistent with large zero-field spin splitting due to the Rashba field reported in literature. In contrast, small anisotropy of g-factor of GaN effective mass donors indicates rather weak Rashba spin-orbit coupling in bulk material, not exceed 400 Gauss, alpha_BIA < 4*10^-13 eVcm. Furthermore, we observe new kind of electron spin resonance in GaN, which we attribute to surface electron accumulation layer. We conclude that the sizable Rashba field in GaN/AlGaN heterostructures originates from properties of the interface.
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Submitted 22 December, 2010;
originally announced December 2010.
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Heat capacity of $α$-GaN: Isotope Effects
Authors:
R. K. Kremer,
M. Cardona,
E. Schmitt,
J. Blumm,
S. K. Estreicher,
M. Sanati,
M. Bockowski,
I. Grzegory,
T. Suski,
A. Jezowski
Abstract:
Until recently, the heat capacity of GaN had only been measured for polycrystalline powder samples. Semiempirical as well as \textit{first-principles} calculations have appeared within the past few years. We present in this article measurements of the heat capacity of hexagonal single crystals of GaN in the 20-1400K temperature range. We find that our data deviate significantly from the literatu…
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Until recently, the heat capacity of GaN had only been measured for polycrystalline powder samples. Semiempirical as well as \textit{first-principles} calculations have appeared within the past few years. We present in this article measurements of the heat capacity of hexagonal single crystals of GaN in the 20-1400K temperature range. We find that our data deviate significantly from the literature values for polycrystalline materials. The dependence of the heat capacity on the isotopic mass has also been investigated recently for monatomic crystals such as diamond, silicon, and germanium. Multi-atomic crystals are expected to exhibit a different dependence of these heat capacities on the masses of each of the isotopes present. These effects have not been investigated in the past. We also present \textit{first-principles} calculations of the dependence of the heat capacities of GaN, as a canonical binary material, on each of the Ga and N masses. We show that they are indeed different, as expected from the fact that the Ga mass affects mainly the acoustic, that of N the optic phonons. It is hoped that these calculations will encourage experimental measurements of the dependence of the heat capacity on isotopic masses in binary and more complex semiconductors.
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Submitted 21 March, 2005;
originally announced March 2005.
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MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure
Authors:
B. J. Kowalski,
I. A. Kowalik,
R. J. Iwanowski,
E. Lusakowska,
M. Sawicki,
J. Sadowski,
I. Grzegory,
S. Porowski
Abstract:
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the valence band states of MnAs and its changes due to increase of the layer thickness were revealed.
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the valence band states of MnAs and its changes due to increase of the layer thickness were revealed.
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Submitted 28 October, 2004; v1 submitted 5 August, 2004;
originally announced August 2004.
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Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies
Authors:
B. J. Kowalski,
I. A. Kowalik,
R. J. Iwanowski,
J. Sadowski,
J. Kanski,
B. A. Orlowski,
J. Ghijsen,
F. Mirabella,
E. Lusakowska,
P. Perlin,
S. Porowski,
I. Grzegory,
M. Leszczynski
Abstract:
The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, which can be ascribed to the presence of In in the layer, has been revealed. A clean (0001)-(1x1) surface was prepared by argon ion sputtering and annealing. Stability of chemical composition of the investigated surface…
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The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, which can be ascribed to the presence of In in the layer, has been revealed. A clean (0001)-(1x1) surface was prepared by argon ion sputtering and annealing. Stability of chemical composition of the investigated surface subjected to similar ion etching was proven by means of X-ray photoemission spectroscopy.
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Submitted 4 August, 2004;
originally announced August 2004.
