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Needle in a haystack: efficiently finding atomically defined quantum dots for electrostatic force microscopy
Authors:
José Bustamante,
Yoichi Miyahara,
Logan Fairgrieve-Park,
Kieran Spruce,
Patrick See,
Neil Curson,
Taylor Stock,
Peter Grutter
Abstract:
The ongoing development of single electron, nano and atomic scale semiconductor devices would benefit greatly from a characterization tool capable of detecting single electron charging events with high spatial resolution, at low temperature. In this work, we introduce a novel Atomic Force Microscope (AFM) instrument capable of measuring critical device dimensions, surface roughness, electrical sur…
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The ongoing development of single electron, nano and atomic scale semiconductor devices would benefit greatly from a characterization tool capable of detecting single electron charging events with high spatial resolution, at low temperature. In this work, we introduce a novel Atomic Force Microscope (AFM) instrument capable of measuring critical device dimensions, surface roughness, electrical surface potential, and ultimately the energy levels of quantum dots and single electron transistors in ultra miniaturized semiconductor devices. Characterization of nanofabricated devices with this type of instrument presents a challenge: finding the device. We therefore also present a process to efficiently find a nanometre size quantum dot buried in a $10 \times 10~\text{mm}^2$ silicon sample using a combination of optical positioning, capacitive sensors and AFM topography in vacuum.
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Submitted 20 March, 2024;
originally announced March 2024.
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Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface
Authors:
Megan Cowie,
Procopios C. Constantinou,
Neil J. Curson,
Taylor J. Z. Stock,
Peter Grutter
Abstract:
We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and amplitudes. These two-level systems lead to correlated carrier number and mobility fluctuations with a range of characteristic timescales; taken together as an ensemb…
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We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and amplitudes. These two-level systems lead to correlated carrier number and mobility fluctuations with a range of characteristic timescales; taken together as an ensemble, they give rise to a $1/f$ power spectral trend. Such individual defect fluctuations at the Si/SiO$_2$ interface impair the performance and reliability of nanoscale semiconductor devices, and will be a significant source of noise in semiconductor-based quantum sensors and computers. The fluctuations measured here are associated with a four-fold competition of rates, including slow two-state switching on the order of seconds and, in one state, fast switching on the order of nanoseconds which is associated with energy loss.
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Submitted 14 March, 2024; v1 submitted 11 March, 2024;
originally announced March 2024.
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Spatially resolved dielectric loss at the Si/SiO$_2$ interface
Authors:
Megan Cowie,
Taylor J. Z. Stock,
Procopios C. Constantinou,
Neil Curson,
Peter Grütter
Abstract:
The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic devices. Here, we study the electric susceptibility of the Si/SiO$_2$ interface with nm spatial resolution using frequency-modulated atomic force microscopy to m…
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The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic devices. Here, we study the electric susceptibility of the Si/SiO$_2$ interface with nm spatial resolution using frequency-modulated atomic force microscopy to measure a patterned dopant delta-layer buried 2 nm beneath the silicon native oxide interface. We show that surface charge organization timescales, which range from 1-150 ns, increase significantly around interfacial states. We conclude that dielectric loss under time-varying gate biases at MHz and sub-MHz frequencies in metal-insulator-semiconductor capacitor device architectures is highly spatially heterogeneous over nm length scales.
Supplemental GIFs can be found at https://doi.org/10.6084/m9.figshare.25546687
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Submitted 4 April, 2024; v1 submitted 23 June, 2023;
originally announced June 2023.
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Single-dopant band bending fluctuations in MoSe$_2$ measured with electrostatic force microscopy
Authors:
Megan Cowie,
Rikke Plougmann,
Zeno Schumacher,
Peter Grütter
Abstract:
In this work, we experimentally demonstrate two-state fluctuations in a metal-insulator-semiconductor (MIS) device formed out of a metallic atomic force microscopy tip, vacuum gap, and multilayer MoSe$_2$ sample. We show that noise in this device is intrinsically bias-dependent due to the bias-dependent surface potential, and does not require that the frequency or magnitude of individual dopant fl…
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In this work, we experimentally demonstrate two-state fluctuations in a metal-insulator-semiconductor (MIS) device formed out of a metallic atomic force microscopy tip, vacuum gap, and multilayer MoSe$_2$ sample. We show that noise in this device is intrinsically bias-dependent due to the bias-dependent surface potential, and does not require that the frequency or magnitude of individual dopant fluctuations are themselves bias-dependent. Finally, we measure spatial nonhomogeneities in band bending (charge reorganization) timescales.
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Submitted 15 June, 2022; v1 submitted 30 September, 2021;
originally announced September 2021.
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How high is a MoSe$_2$ monolayer?
Authors:
Rikke Plougmann,
Megan Cowie,
Yacine Benkirane,
Léonard Schué,
Zeno Schumacher,
Peter Grütter
Abstract:
Transition metal dichalcogenides (TMDCs) have attracted significant attention for optoelectronic, photovoltaic and photoelectrochemical applications. The properties of TMDCs are highly dependent on the number of stacked atomic layers, which is usually counted post-fabrication, using a combination of optical methods and atomic force microscopy (AFM) height measurements. Here, we use photoluminescen…
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Transition metal dichalcogenides (TMDCs) have attracted significant attention for optoelectronic, photovoltaic and photoelectrochemical applications. The properties of TMDCs are highly dependent on the number of stacked atomic layers, which is usually counted post-fabrication, using a combination of optical methods and atomic force microscopy (AFM) height measurements. Here, we use photoluminescence spectroscopy and three different AFM methods to demonstrate significant discrepancies in height measurements of exfoliated MoSe$_2$ flakes on SiO$_2$ depending on the method used. We highlight that overlooking effects from electrostatic forces, contaminants and surface binding can be misleading when measuring the height of a MoSe$_2$ flake. These factors must be taken into account as a part of the protocol for counting TMDC layers.
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Submitted 11 September, 2021;
originally announced September 2021.
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Charge carrier inversion in a doped thin film organic semiconductor island
Authors:
Zeno Schumacher,
Rasa Rejali,
Megan Cowie,
Andreas Spielhofer,
Yoichi Miyahara,
Peter Grutter
Abstract:
Inducing an inversion layer in organic semiconductors is a highly nontrivial, but critical, achievement for producing organic field-effect transistor (OFET) devices, which rely on the generation of inversion, accumulation, and depletion regimes for successful operation. In recent years, a major milestone was reached: an OFET was made to successfully operate in the inversion-mode for the first time…
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Inducing an inversion layer in organic semiconductors is a highly nontrivial, but critical, achievement for producing organic field-effect transistor (OFET) devices, which rely on the generation of inversion, accumulation, and depletion regimes for successful operation. In recent years, a major milestone was reached: an OFET was made to successfully operate in the inversion-mode for the first time. Here, we develop a pulsed bias technique to characterize the dopant type of any organic material system, without prior knowledge or characterization of the material in question. We use this technique on a pentacene/PTCDI heterostructure and thus deduce that pentacene is n-doped by impurities. Additionally, through tip-induced band-bending, we generate inversion, depletion, and accumulation regimes over a 20~nm radius, three monolayer thick n-doped pentacene island. Our findings demonstrate that nanometer-scale lateral extent and thickness are sufficient for an OFET device to operate in the inversion regime.
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Submitted 5 January, 2021; v1 submitted 4 August, 2020;
originally announced August 2020.
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Direct Imaging, Three-dimensional Interaction Spectroscopy, and Friction Anisotropy of Atomic-scale Ripples on MoS$_{2}$
Authors:
Omur E. Dagdeviren,
Ogulcan Acikgoz,
Peter Grutter,
Mehmet Z. Baykara
Abstract:
Theory predicts that two-dimensional (2D) materials may only exist in the presence of out-ofplane deformations on atomic length scales, frequently referred to as ripples. While such ripples can be detected via electron microscopy, their direct observation via surface-based techniques and characterization in terms of interaction forces and energies remain limited, preventing an unambiguous study of…
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Theory predicts that two-dimensional (2D) materials may only exist in the presence of out-ofplane deformations on atomic length scales, frequently referred to as ripples. While such ripples can be detected via electron microscopy, their direct observation via surface-based techniques and characterization in terms of interaction forces and energies remain limited, preventing an unambiguous study of their effect on mechanical characteristics, including but not limited to friction anisotropy. Here, we employ high-resolution atomic force microscopy to demonstrate the presence of atomic-scale ripples on supported samples of few-layer molybdenum disulfide (MoS$_{2}$). Three-dimensional force / energy spectroscopy is utilized to study the effect of ripples on the interaction landscape. Friction force microscopy reveals multiple symmetries for friction anisotropy, explained by studying rippled sample areas as a function of scan size. Our experiments contribute to the continuing development of a rigorous understanding of the nanoscale mechanics of 2D materials.
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Submitted 13 May, 2020;
originally announced May 2020.
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Growth and Elasticity of Mechanically-Created Neurites
Authors:
Madeleine Anthonisen,
Peter Grutter
Abstract:
Working in the framework of morphoelasticity, we develop a model of neurite growth in response to elastic deformation. We decompose the applied stretch into an elastic component and a growth component, and adopt an observationally-motivated model for the growth law. We then compute the best-fit model parameters by fitting to force-extension curves from measurements of constant-speed uniaxial defor…
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Working in the framework of morphoelasticity, we develop a model of neurite growth in response to elastic deformation. We decompose the applied stretch into an elastic component and a growth component, and adopt an observationally-motivated model for the growth law. We then compute the best-fit model parameters by fitting to force-extension curves from measurements of constant-speed uniaxial deformations of mechanically-induced neurites of rat hippocampal neurons. We find a time constant for the growth law of 0.009~s$^{-1}$, similar to the diffusion rate of actin in a cell. Our results characterize the kinematics of neurite growth and establish new limits on the growth rate of neurites.
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Submitted 11 December, 2019;
originally announced December 2019.
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Optical excitation of atomic force microscopy cantilever for accurate spectroscopic measurements
Authors:
Yoichi Miyahara,
Harrisonn Griffin,
Antoine Roy-Gobeil,
Ron Belyansky,
Hadallia Bergeron,
José Bustamante,
Peter Grutter
Abstract:
Reliable operation of frequency modulation mode atomic force microscopy (FM-AFM) depends on a clean resonance of an AFM cantilever. It is recognized that the spurious mechanical resonances which originate from various mechanical components in the microscope body are excited by a piezoelectric element that is intended for exciting the AFM cantilever oscillation and these spurious resonance modes ca…
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Reliable operation of frequency modulation mode atomic force microscopy (FM-AFM) depends on a clean resonance of an AFM cantilever. It is recognized that the spurious mechanical resonances which originate from various mechanical components in the microscope body are excited by a piezoelectric element that is intended for exciting the AFM cantilever oscillation and these spurious resonance modes cause the serious undesirable signal artifacts in both frequency shift and dissipation signals. We present an experimental setup to excite only the oscillation of the AFM cantilever in a fiber-optic interferometer system using optical excitation force. While the optical excitation force is provided by a separate laser light source with a different wavelength (excitation laser : λ = 1310 nm), the excitation laser light is still guided through the same single-mode optical fiber that guides the laser light (detection laser : λ = 1550 nm) used for the interferometric detection of the cantilever deflection. We present the details of the instrumentation and its performance. This setup allows us to eliminate the problems associated with the spurious mechanical resonances such as the apparent dissipation signal and the inaccuracy in the resonance frequency measurement.
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Submitted 25 October, 2019;
originally announced October 2019.
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Nanopore fabrication via tip-controlled local breakdown using an atomic force microscope
Authors:
Yuning Zhang,
Yoichi Miyahara,
Nassim Derriche,
Wayne Yang,
Khadija Yazda,
Zezhou Liu,
Peter Grutter,
Walter Reisner
Abstract:
The dielectric breakdown approach for forming nanopores has greatly accelerated the pace of research in solid-state nanopore sensing, enabling inexpensive formation of nanopores via a bench top setup. Here we demonstrate the potential of tip controlled dielectric breakdown (TCLB) to fabricate pores 100$\times$ faster, with high scalability and nanometre positioning precision. A conductive atomic f…
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The dielectric breakdown approach for forming nanopores has greatly accelerated the pace of research in solid-state nanopore sensing, enabling inexpensive formation of nanopores via a bench top setup. Here we demonstrate the potential of tip controlled dielectric breakdown (TCLB) to fabricate pores 100$\times$ faster, with high scalability and nanometre positioning precision. A conductive atomic force microscope (AFM) tip is brought into contact with a nitride membrane positioned above an electrolyte reservoir. Application of a voltage pulse at the tip leads to the formation of a single nanoscale pore. Pores are formed precisely at the tip position with a complete suppression of multiple pore formation. In addition, our approach greatly accelerates the electric breakdown process, leading to an average pore fabrication time on the order of 10 ms, at least 2 orders of magnitude shorter than achieved by classic dielectric breakdown approaches. With this fast pore writing speed we can fabricate over 300 pores in half an hour on the same membrane.
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Submitted 21 January, 2019;
originally announced January 2019.
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Amplitude dependence of resonance frequency and its consequences for scanning probe microscopy
Authors:
Omur E. Dagdeviren,
Yoichi Miyahara,
Aaron Mascaro,
Tyler Enright,
Peter Grütter
Abstract:
With recent advances in scanning probe microscopy (SPM), it is now routine to determine the atomic structure of surfaces and molecules while quantifying the local tip-sample interaction potentials. Such quantitative experiments are based on the accurate measurement of the resonance frequency shift due to the tip-sample interaction. Here, we experimentally show that the resonance frequency of oscil…
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With recent advances in scanning probe microscopy (SPM), it is now routine to determine the atomic structure of surfaces and molecules while quantifying the local tip-sample interaction potentials. Such quantitative experiments are based on the accurate measurement of the resonance frequency shift due to the tip-sample interaction. Here, we experimentally show that the resonance frequency of oscillating probes used for SPM experiments change systematically as a function of oscillation amplitude under typical operating conditions. This change in resonance frequency is not due to tip-sample interactions, but rather due to the cantilever strain or geometric effects and thus the resonance frequency being a function of the oscillation amplitude. Our numerical calculations demonstrate that the amplitude dependence of the resonance frequency is an additional yet overlooked systematic error source that can result nonnegligible errors in measured interaction potentials and forces. Our experimental results and complementary numerical calculations reveal that the frequency shift due to this amplitude dependence needs to be corrected even for experiments with active oscillation amplitude control to be able to quantify the tip-sample interaction potentials and forces with milli-electron volt and pico-Newton resolutions.
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Submitted 20 December, 2018;
originally announced December 2018.
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Eliminating the effect of acoustic noise on cantilever spring constant calibration
Authors:
Aaron Mascaro,
Yoichi Miyahara,
Omur E. Dagdeviren,
Peter Grutter
Abstract:
A common use for atomic force microscopy is to quantify local forces through tip-sample interactions between the probe tip and a sample surface. The accuracy of these measurements depends on the accuracy to which the cantilever spring constant is known. Recent work has demonstrated that the measured spring constant of a cantilever can vary up to a factor of two, even for the exact same cantilever…
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A common use for atomic force microscopy is to quantify local forces through tip-sample interactions between the probe tip and a sample surface. The accuracy of these measurements depends on the accuracy to which the cantilever spring constant is known. Recent work has demonstrated that the measured spring constant of a cantilever can vary up to a factor of two, even for the exact same cantilever measured by different users on different microscopes. Here we demonstrate that a standard method for calibrating the spring constant (using the oscillations due to thermal energy) is susceptible to ambient noise, which can alter the result significantly. We demonstrate a new step-by-step method to measure the spring constant by actively driving the cantilever to measure the resonance frequency and quality factor, giving results that are unaffected by acoustic noise. Our method can be performed rapidly on any atomic force microscope without any expensive additional hardware.
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Submitted 3 October, 2018;
originally announced October 2018.
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Calibration of the oscillation amplitude of electrically excited scanning probe microscopy sensors
Authors:
Omur E. Dagdeviren,
Yoichi Miyahara,
Aaron Mascaro,
Peter Grutter
Abstract:
Atomic force microscopy (AFM) is an analytical surface characterization tool which can reveal a sample's topography with high spatial resolution while simultaneously probing tip-sample interactions. Local measurement of chemical properties with high-resolution has gained much popularity in recent years with advances in dynamic AFM methodologies. A calibration factor is required to convert the elec…
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Atomic force microscopy (AFM) is an analytical surface characterization tool which can reveal a sample's topography with high spatial resolution while simultaneously probing tip-sample interactions. Local measurement of chemical properties with high-resolution has gained much popularity in recent years with advances in dynamic AFM methodologies. A calibration factor is required to convert the electrical readout to a mechanical oscillation amplitude in order to extract quantitative information about the surface. We propose a new calibration technique for the oscillation amplitude of electrically driven probes, which is based on measuring the electrical energy input to maintain the oscillation amplitude constant. We demonstrate the application of the new technique with quartz tuning fork including the qPlus configuration, while the same principle can be applied to other piezoelectric resonators such as length extension resonators, or piezoelectric cantilevers. The calibration factor obtained by this technique is found to be in agreement with using thermal noise spectrum method for capsulated, decapsulated tuning forks and tuning forks in the qPlus configuration.
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Submitted 5 September, 2018;
originally announced September 2018.
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Dissipation modulated Kelvin probe force microscopy method
Authors:
Yoichi Miyahara,
Peter Grutter
Abstract:
We review a new implementation of Kelvin probe force microscopy (KPFM) in which the dissipation signal of frequency modulation atomic force microscopy (FM-AFM) is used for dc bias voltage feedback (D-KPFM). The dissipation arises from an oscillating electrostatic force that is coherent with the tip oscillation, which is caused by applying the ac voltage between the tip and sample. The magnitude of…
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We review a new implementation of Kelvin probe force microscopy (KPFM) in which the dissipation signal of frequency modulation atomic force microscopy (FM-AFM) is used for dc bias voltage feedback (D-KPFM). The dissipation arises from an oscillating electrostatic force that is coherent with the tip oscillation, which is caused by applying the ac voltage between the tip and sample. The magnitude of the externally induced dissipation is found to be proportional to the effective dc bias voltage, which is the difference between the applied dc voltage and the contact potential difference. Two different implementations of D-KPFM are presented. In the first implementation, the frequency of the applied ac voltage, $f_\mathrm{el}$, is chosen to be the same as the tip oscillation ($f_\mathrm{el} = f_\mathrm{m}$: $1ω$D-KPFM). In the second one, the ac voltage frequency, $f_\mathrm{el}$, is chosen to be twice the tip oscillation frequency ($f_\mathrm{el}= 2 f_\mathrm{m}$: $2ω$D-KPFM). In $1ω$D-KPFM, the dissipation is proportional to the electrostatic force, which enables the use of a small ac voltage amplitude even down to $\approx 10$\,mV. In $2ω$D-KPFM, the dissipation is proportional to the electrostatic force gradient, which results in the same potential contrast as that obtained by FM-KPFM. D-KPFM features a simple implementation with no lock-in amplifier and faster scanning as it requires no low frequency modulation. The use of a small ac voltage amplitude in $1ω$D-KPFM is of great importance in characterizing of technically relevant materials in which their electrical properties can be disturbed by the applied electric field. $2ω$D-KPFM is useful when more accurate potential measurement is required. The operations in $1ω$ and $2ω$D-KPFM can be switched easily to take advantage of both features at the same location on a sample.
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Submitted 20 April, 2017;
originally announced April 2017.
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Force-gradient sensitive Kelvin probe force microscopy by dissipative electrostatic force modulation
Authors:
Yoichi Miyahara,
Peter Grutter
Abstract:
We report a Kelvin probe force microscopy (KPFM) implementation using the dissipation signal of a frequency modulation atomic force microscopy that is capable of detecting the gradient of electrostatic force rather than electrostatic force. It features a simple implementation and faster scanning as it requires no low frequency modulation. We show that applying a coherent ac voltage with two times…
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We report a Kelvin probe force microscopy (KPFM) implementation using the dissipation signal of a frequency modulation atomic force microscopy that is capable of detecting the gradient of electrostatic force rather than electrostatic force. It features a simple implementation and faster scanning as it requires no low frequency modulation. We show that applying a coherent ac voltage with two times the cantilever oscillation frequency induces the dissipation signal proportional to the electrostatic force gradient which depends on the effective dc bias voltage including the contact potential difference. We demonstrate the KPFM images of a MoS$_2$ flake taken with the present method is in quantitative agreement with that taken with the frequency modulated Kelvin probe force microscopy technique.
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Submitted 20 April, 2017; v1 submitted 28 February, 2017;
originally announced March 2017.
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Quantum state readout of individual quantum dots by electrostatic force detection
Authors:
Yoichi Miyahara,
Antoine Roy-Gobeil,
Peter Grutter
Abstract:
Electric charge detection by atomic force microscopy (AFM) with single- electron resolution (e-EFM) is a promising way to investigate the electronic level structure of individual quantum dots (QD). The oscillating AFM tip modulates the energy of the QDs, causing single electrons to tunnel between QDs and an electrode. The resulting oscillating electrostatic force changes the resonant frequency and…
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Electric charge detection by atomic force microscopy (AFM) with single- electron resolution (e-EFM) is a promising way to investigate the electronic level structure of individual quantum dots (QD). The oscillating AFM tip modulates the energy of the QDs, causing single electrons to tunnel between QDs and an electrode. The resulting oscillating electrostatic force changes the resonant frequency and dam** of the AFM cantilever, enabling electrometry with a single-electron sensitivity. Quantitative electronic level spectroscopy is possible by swee** the bias voltage. Charge stability diagram can be obtained by scanning the AFM tip around the QD. e-EFM technique enables to investigate individual colloidal nanoparticles and self- assembled QDs without nanoscale electrodes. e-EFM is a quantum electromechanical system where the back-action of a tunneling electron is detected by AFM; it can also be considered as a mechanical analog of admittance spectroscopy with a radio frequency resonator, which is emerging as a promising tool for quantum state readout for quantum computing. In combination with the topography imaging capability of the AFM, e-EFM is a powerful tool for investigating new nanoscale material systems which can be used as quantum bits.
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Submitted 26 October, 2016;
originally announced October 2016.
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The lower limit for time resolution in frequency modulation atomic force microscopy
Authors:
Zeno Schumacher,
Andreas Spielhofer,
Yoichi Miyahara,
Peter Grutter
Abstract:
Atomic force microscopy (AFM) routinely achieves structural information in the sub-nm length scale. Measuring time resolved properties on this length scale to understand kinetics at the nm scale remains an elusive goal. We present a general analysis of the lower limit for time resolution in AFM. Our finding suggests the time resolution in AFM is ultimately limited by the well-known thermal limit o…
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Atomic force microscopy (AFM) routinely achieves structural information in the sub-nm length scale. Measuring time resolved properties on this length scale to understand kinetics at the nm scale remains an elusive goal. We present a general analysis of the lower limit for time resolution in AFM. Our finding suggests the time resolution in AFM is ultimately limited by the well-known thermal limit of AFM and not as often proposed by the mechanical response time of the force sensing cantilever. We demonstrate a general pump-probe approach using the cantilever as a detector responding to the averaged signal. This method can be applied to any excitation signal such as electrical, thermal, magnetic or optical. Experimental implementation of this method allows us to measure a photocarrier decay time of ~1 ps in low temperature grown GaAs using a cantilever with a resonance frequency of 280 kHz.
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Submitted 8 September, 2016;
originally announced September 2016.
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Kelvin probe force microscopy by direct dissipative electrostatic force modulation
Authors:
Yoichi Miyahara,
Jessica Topple,
Zeno Schumacher,
Peter Grutter
Abstract:
We report a new experimental technique for Kelvin probe force microscopy (KPFM) using the dissipation signal of frequency modulation atomic force microscopy for bias voltage feedback. It features a simple implementation and faster scanning as it requires no low frequency modulation. The dissipation is caused by the oscillating electrostatic force that is coherent with the tip oscillation, which is…
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We report a new experimental technique for Kelvin probe force microscopy (KPFM) using the dissipation signal of frequency modulation atomic force microscopy for bias voltage feedback. It features a simple implementation and faster scanning as it requires no low frequency modulation. The dissipation is caused by the oscillating electrostatic force that is coherent with the tip oscillation, which is induced by a sinusoidally oscillating voltage applied between the tip and sample. We analyzed the effect of the phase of the oscillating force on the frequency shift and dissipation and found that the relative phase of 90$^\circ$ that causes only the dissipation is the most appropriate for KPFM measurements. The present technique requires a significantly smaller ac voltage amplitude by virtue of enhanced force detection due to the resonance enhancement and the use of fundamental flexural mode oscillation for electrostatic force detection. This feature will be of great importance in the electrical characterizations of technically relevant materials whose electrical properties are influenced by the externally applied electric field as is the case in semiconductor electronic devices.
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Submitted 24 August, 2015;
originally announced August 2015.
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Transient adhesion and conductance phenomena in initial nanoscale mechanical contacts between dissimilar metals
Authors:
William Paul,
David Oliver,
Yoichi Miyahara,
Peter Grütter
Abstract:
We report on transient adhesion and conductance phenomena associated with tip wetting in mechanical contacts produced by the indentation of a clean W(111) tip into a Au(111) surface. A combination of atomic force microscopy and scanning tunneling microscopy was used to carry out indentation and to image residual impressions in ultra-high vacuum. The ~7 nm radii tips used in these experiments were…
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We report on transient adhesion and conductance phenomena associated with tip wetting in mechanical contacts produced by the indentation of a clean W(111) tip into a Au(111) surface. A combination of atomic force microscopy and scanning tunneling microscopy was used to carry out indentation and to image residual impressions in ultra-high vacuum. The ~7 nm radii tips used in these experiments were prepared and characterized by field ion microscopy in the same instrument. The very first indentations of the tungsten tips show larger conductance and pull-off adhesive forces than subsequent indentations. After ~30 indentations to a depth of ~1.7 nm, the maximum conductance and adhesion forces reach steady-state values approximately 12x and 6x smaller than their initial value. Indentation of W(111) tips into Cu(100) was also performed to investigate the universality of tip wetting phenomena with a different substrate. We propose a model from contact mechanics considerations which quantitatively reproduces the observed decay rate of the conductance and adhesion drops with a 1/e decay constant of 9-14 indentation cycles. The results show that the surface composition of an indenting tip plays an important role in defining the mechanical and electrical properties of indentation contacts.
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Submitted 7 August, 2013; v1 submitted 5 August, 2013;
originally announced August 2013.
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FIM tips in SPM: Apex orientation and temperature considerations on atom transfer and diffusion
Authors:
William Paul,
David Oliver,
Yoichi Miyahara,
Peter Grütter
Abstract:
Atoms transferred to W(111) and W(110) tip apices from the Au(111) surface during tunneling and approach to mechanical contact experiments in STM are characterized in FIM at room temperature and at 158 K. The different activation energies for diffusion on the (111) and (110) tip planes and the experiment temperature are shown to be important factors controlling the extent of changes to the atomic…
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Atoms transferred to W(111) and W(110) tip apices from the Au(111) surface during tunneling and approach to mechanical contact experiments in STM are characterized in FIM at room temperature and at 158 K. The different activation energies for diffusion on the (111) and (110) tip planes and the experiment temperature are shown to be important factors controlling the extent of changes to the atomic structure of the tip. W(111) tips are much better suited to scanning probe studies which require the characterization of an atomically defined tip and subsequent verification of its integrity in FIM. The statistics of the observed spikes in the tunneling current when the tips are approached to Au(111) are interpreted using a simple model of adatoms diffusing through the STM junction.
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Submitted 3 August, 2013;
originally announced August 2013.
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Comment on 'Field ion microscopy characterized tips in noncontact atomic force microscopy: Quantification of long-range force interactions'
Authors:
William Paul,
Peter Grütter
Abstract:
A recent article by Falter et al. (Phys. Rev. B 87, 115412 (2013)) presents experimental results using field ion microscopy characterized tips in noncontact atomic force microscopy in order to characterize electrostatic and van der Waals long range forces. In the article, the tip radius was substantially underestimated at ~4.7 nm rather than ~8.1 nm due to subtleties in the application of the ring…
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A recent article by Falter et al. (Phys. Rev. B 87, 115412 (2013)) presents experimental results using field ion microscopy characterized tips in noncontact atomic force microscopy in order to characterize electrostatic and van der Waals long range forces. In the article, the tip radius was substantially underestimated at ~4.7 nm rather than ~8.1 nm due to subtleties in the application of the ring counting method. We point out where common errors in ring counting arise in order to benefit future experimental work in which the determination of tip radius by FIM is important.
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Submitted 1 August, 2013; v1 submitted 24 April, 2013;
originally announced April 2013.
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Adsorption of PTCDA and C60 on KBr(001): electrostatic interaction versus electronic hybridization
Authors:
Q. Jia,
W. Ji,
S. A. Burke,
H. J. Gao,
P. Grutter,
H. Guo
Abstract:
The adsorption of functional molecules on insulator surfaces is of great importance to molecular electronics. We present a systematical investigation of geometric and electronic properties of PTCDA and C60 on KBr(001) using DFT and non-contact atomic force microscopy. It was found that electrostatics is the primary interaction mechanism for PTCDA and C60 adsorbed on KBr. It was thus concluded that…
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The adsorption of functional molecules on insulator surfaces is of great importance to molecular electronics. We present a systematical investigation of geometric and electronic properties of PTCDA and C60 on KBr(001) using DFT and non-contact atomic force microscopy. It was found that electrostatics is the primary interaction mechanism for PTCDA and C60 adsorbed on KBr. It was thus concluded that alkali-halides is a competitive candidate to be adopted to support low polarizability molecules, such as PTCDA, in future electronics.
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Submitted 25 March, 2013;
originally announced March 2013.
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Implementation of atomically defined Field Ion Microscopy tips in Scanning Probe Microscopy
Authors:
William Paul,
Yoichi Miyahara,
Peter Grütter
Abstract:
The Field Ion Microscope (FIM) can be used to characterize the atomic configuration of the apex of sharp tips. These tips are well suited for Scanning Probe Microscopy (SPM) since they predetermine SPM resolution and electronic structure for spectroscopy. A protocol is proposed to preserve the atomic structure of the tip apex from etching due to gas impurities during the transfer period from FIM t…
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The Field Ion Microscope (FIM) can be used to characterize the atomic configuration of the apex of sharp tips. These tips are well suited for Scanning Probe Microscopy (SPM) since they predetermine SPM resolution and electronic structure for spectroscopy. A protocol is proposed to preserve the atomic structure of the tip apex from etching due to gas impurities during the transfer period from FIM to SPM, and estimations are made regarding the time limitations of such an experiment due to contamination by ultra-high vacuum (UHV) rest gases. While avoiding any current setpoint overshoot to preserve the tip integrity, we present results from approaches of atomically defined tungsten tips to the tunneling regime with Au(111), HOPG, and Si(111) surfaces at room temperature. We conclude from these experiments that adatom mobility and physisorbed gas on the sample surface limit the choice of surfaces for which the tip integrity is preserved in tunneling experiments at room temperature. The atomic structure of FIM tip apices is unchanged only after tunneling to the highly reactive Si(111) surface.
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Submitted 2 July, 2012;
originally announced July 2012.
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Scanning probe microscopy imaging of metallic nanocontacts
Authors:
D. Stöffler,
S. Fostner,
P. Grütter,
R. Hoffmann-Vogel
Abstract:
We show scanning probe microscopy measurements of metallic nanocontacts between controlled electromigration cycles. The nanowires used for the thinning process are fabricated by shadow evaporation. The highest resolution obtained using scanning force microscopy is about 3 nm. During the first few electromigration cycles the overall slit structure of the nanocontact is formed. The slit first passes…
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We show scanning probe microscopy measurements of metallic nanocontacts between controlled electromigration cycles. The nanowires used for the thinning process are fabricated by shadow evaporation. The highest resolution obtained using scanning force microscopy is about 3 nm. During the first few electromigration cycles the overall slit structure of the nanocontact is formed. The slit first passes along grain boundaries and then at a later stage vertically splits grains in the course of consuming them. We find that first the whole wire is heated and later during the thinning process as the slit forms the current runs over several smaller contacts which needs less power.
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Submitted 29 December, 2011;
originally announced December 2011.
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Low Temperature Electrostatic Force Microscopy of a Deep Two Dimensional Electron Gas using a Quartz Tuning Fork
Authors:
J. A. Hedberg,
A. Lal,
Y. Miyahara,
P. Grütter,
G. Gervais,
M. Hilke,
L. Pfeiffer,
K. W. West
Abstract:
Using an ultra-low temperature, high magnetic field scanning probe microscope, we have measured electric potentials of a deeply buried two dimensional electron gas (2DEG). Relying on the capacitive coupling between the 2DEG and a resonant tip/cantilever structure, we can extract electrostatic potential information of the 2DEG from the dynamics of the oscillator. We present measurements using a qua…
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Using an ultra-low temperature, high magnetic field scanning probe microscope, we have measured electric potentials of a deeply buried two dimensional electron gas (2DEG). Relying on the capacitive coupling between the 2DEG and a resonant tip/cantilever structure, we can extract electrostatic potential information of the 2DEG from the dynamics of the oscillator. We present measurements using a quartz tuning fork oscillator and a 2DEG with a cleaved edge overgrowth structure. The sensitivity of the quartz tuning fork as force sensor is demonstrated by observation of Shubnikov de Haas oscillations at a large tip-2DEG separation distance of more than 500 nm.
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Submitted 17 August, 2010;
originally announced August 2010.
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Dam** of a nanomechanical oscillator strongly coupled to a quantum dot
Authors:
Steven D. Bennett,
Lynda Cockins,
Yoichi Miyahara,
Peter Grütter,
Aashish A. Clerk
Abstract:
We present theoretical and experimental results on the mechanical dam** of an atomic force microscope cantilever strongly coupled to a self-assembled InAs quantum dot. When the cantilever oscillation amplitude is large, its motion dominates the charge dynamics of the dot which in turn leads to nonlinear, amplitude-dependent dam** of the cantilever. We observe highly asymmetric lineshapes of…
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We present theoretical and experimental results on the mechanical dam** of an atomic force microscope cantilever strongly coupled to a self-assembled InAs quantum dot. When the cantilever oscillation amplitude is large, its motion dominates the charge dynamics of the dot which in turn leads to nonlinear, amplitude-dependent dam** of the cantilever. We observe highly asymmetric lineshapes of Coulomb blockade peaks in the dam** that reflect the degeneracy of energy levels on the dot, in excellent agreement with our strong coupling theory. Furthermore, we predict that excited state spectroscopy is possible by studying the dam** versus oscillation amplitude, in analogy to varying the amplitude of an ac gate voltage.
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Submitted 1 October, 2009;
originally announced October 2009.
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Energy levels of few electron quantum dots imaged and characterized by atomic force microscopy
Authors:
Lynda Cockins,
Yoichi Miyahara,
Steven D. Bennett,
Aashish A. Clerk,
Peter Grutter,
Sergei Studenikin,
Philip Poole,
Andrew Sachrajda
Abstract:
Strong confinement of charges in few electron systems such as in atoms, molecules and quantum dots leads to a spectrum of discrete energy levels that are often shared by several degenerate quantum states. Since the electronic structure is key to understanding their chemical properties, methods that probe these energy levels in situ are important. We show how electrostatic force detection using a…
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Strong confinement of charges in few electron systems such as in atoms, molecules and quantum dots leads to a spectrum of discrete energy levels that are often shared by several degenerate quantum states. Since the electronic structure is key to understanding their chemical properties, methods that probe these energy levels in situ are important. We show how electrostatic force detection using atomic force microscopy reveals the electronic structure of individual and coupled self-assembled quantum dots. An electron addition spectrum in the Coulomb blockade regime, resulting from a change in cantilever resonance frequency and dissipation during tunneling events, shows one by one electron charging of a dot. The spectra show clear level degeneracies in isolated quantum dots, supported by the first observation of predicted temperature-dependent shifts of Coulomb blockade peaks. Further, by scanning the surface we observe that several quantum dots may reside on what topologically appears to be just one. These images of grouped weakly and strongly coupled dots allow us to estimate their relative coupling strengths.
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Submitted 30 September, 2009;
originally announced October 2009.
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Detection of Single Electron Charging in an Individual InAs Quantum Dot by Noncontact Atomic Force Microscopy
Authors:
Romain Stomp,
Yoichi Miyahara,
Sacha Schaer,
Qingfeng Sun,
Hong Guo,
Peter Grutter,
Sergei Studenikin,
Philip Poole,
Andy Sachrajda
Abstract:
Single electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were measured as a function of the tip-back electrode voltage and the resulting spectra show distinct jumps when the tip was positioned above the dot. The observed…
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Single electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were measured as a function of the tip-back electrode voltage and the resulting spectra show distinct jumps when the tip was positioned above the dot. The observed jumps in the frequency shift, with corresponding peaks in dissipation, are attributed to a single electron tunneling between the dot and the back electrode governed by Coulomb blockade effect, and are consistent with a model based on the free energy of the system. The observed phenomenon may be regarded as the ``force version'' of the Coulomb blockade effect.
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Submitted 11 January, 2005;
originally announced January 2005.
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I-V characteristics and differential conductance fluctuations of Au nanowires
Authors:
H. Mehrez,
Alex Wlasenko,
Brian Larade,
Jeremy Taylor,
Peter Grutter,
Hong Guo
Abstract:
Electronic transport properties of Au nano-structure are investigated using both experimental and theoretical analysis. Experimentally, stable Au nanowires were created using mechanically controllable break junction in air, and simultaneous current-voltage (I-V) and differential conductance $δI/δV$ data were measured. The atomic device scale structures are mechanically very stable up to bias vol…
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Electronic transport properties of Au nano-structure are investigated using both experimental and theoretical analysis. Experimentally, stable Au nanowires were created using mechanically controllable break junction in air, and simultaneous current-voltage (I-V) and differential conductance $δI/δV$ data were measured. The atomic device scale structures are mechanically very stable up to bias voltage $V_b\sim0.6V$ and have a life time of a few $minutes$. Facilitated by a shape function data analysis technique which finger-prints electronic properties of the atomic device, our data show clearly differential conductance fluctuations with an amplitude $>1%$ at room temperature, and a nonlinear I-V characteristics. To understand the transport features of these atomic scale conductors, we carried out {\it ab initio} calculations on various Au atomic wires. The theoretical results demonstrate that transport properties of these systems crucially depend on the electronic properties of the scattering region, the leads, and most importantly the interaction of the scattering region with the leads. For ideal, clean Au contacts, the theoretical results indicate a linear I-V behavior for bias voltage $V_b<0.5V$. When sulfur impurities exist at the contact junction, nonlinear I-V curves emerge due to a tunnelling barrier established in the presence of the S atom. The most striking observation is that even a single S atom can cause a qualitative change of the I-V curve from linear to nonlinear. A quantitatively favorable comparison between experimental data and theoretical results is obtained. We also report other results concerning quantum transport through Au atomic contacts.
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Submitted 8 June, 2001;
originally announced June 2001.
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Surface Relaxations, Current Enhancements, and Absolute Distances in High Resolution Scanning Tunneling Microscopy
Authors:
W. A. Hofer,
A. J. Fisher,
R. A. Wolkow,
P. Gruetter
Abstract:
We have performed the most realistic simulation to date of the operation of a scanning tunneling microscope. Probe-sample distances from beyond tunneling to actual surface contact are covered. We simultaneously calculate forces, atomic displacements, and tunneling currents, allowing quantitative comparison with experimental values. A distance regime below which the probe becomes unstable is iden…
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We have performed the most realistic simulation to date of the operation of a scanning tunneling microscope. Probe-sample distances from beyond tunneling to actual surface contact are covered. We simultaneously calculate forces, atomic displacements, and tunneling currents, allowing quantitative comparison with experimental values. A distance regime below which the probe becomes unstable is identified. It is shown that the real distance differs substantially from previous estimates because of large atomic displacements on the surface and at the probe-tip.
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Submitted 25 November, 2001; v1 submitted 26 June, 2001;
originally announced June 2001.
