Showing 1–11 of 11 results for author: Grubišić-Čabo, A

Nano-ARPES investigation of twisted bilayer tungsten disulfide

Authors: Giovanna Feraco, Oreste De Luca, Przemysław Przybysz, Homayoun Jafari, Oleksandr Zheliuk, Ying Wang, Philip Schädlich, Pavel Dudin, José Avila, Jianting Ye, Thomas Seyller, Paweł Dąbrowski, Paweł Kowalczyk, Jagoda Sławińska, Petra Rudolf, Antonija Grubišić-Čabo

Abstract: The diverse and intriguing phenomena observed in twisted bilayer systems, such as graphene and transition metal dichalcogenides, prompted new questions about the emergent effects that they may host. However, the practical challenge of realizing these structures on a scale large enough for spectroscopic investigation, remains a significant hurdle, resulting in a scarcity of direct measurements of t… ▽ More The diverse and intriguing phenomena observed in twisted bilayer systems, such as graphene and transition metal dichalcogenides, prompted new questions about the emergent effects that they may host. However, the practical challenge of realizing these structures on a scale large enough for spectroscopic investigation, remains a significant hurdle, resulting in a scarcity of direct measurements of the electronic band structure of twisted transition metal dichalcogenide bilayers. Here we present a systematic nanoscale angle-resolved photoemission spectroscopy investigation of bulk, single layer, and twisted bilayer WS2 with a small twist angle of 4.4°. The experimental results are compared with theoretical calculations based on density functional theory along the high-symmetry directions Γ-K and Γ-M. Surprisingly, the electronic band structure measurements suggest a structural relaxation occurring at 4.4° twist angle, and formation of large, untwisted bilayer regions. △ Less

Submitted 7 December, 2023; originally announced December 2023.

Comments: 23 pages, 11 figures

Quasi-free-standing AA-stacked bilayer graphene induced by calcium intercalation of the graphene-silicon carbide interface

Authors: Antonija Grubišić-Čabo, Jimmy C. Kotsakidis, Yuefeng Yin, Anton Tadich, Matthew Haldon, Sean Solari, John Riley, Eric Huwald, Kevin M. Daniels, Rachael L. Myers-Ward, Mark T. Edmonds, Nikhil Medhekar, D. Kurt Gaskill, Michael S. Fuhrer

Abstract: We study quasi-freestanding bilayer graphene on silicon carbide intercalated by calcium. The intercalation, and subsequent changes to the system, were investigated by low-energy electron diffraction, angle-resolved photoemission spectroscopy (ARPES) and density-functional theory (DFT). Calcium is found to intercalate only at the graphene-SiC interface, completely displacing the hydrogen terminatin… ▽ More We study quasi-freestanding bilayer graphene on silicon carbide intercalated by calcium. The intercalation, and subsequent changes to the system, were investigated by low-energy electron diffraction, angle-resolved photoemission spectroscopy (ARPES) and density-functional theory (DFT). Calcium is found to intercalate only at the graphene-SiC interface, completely displacing the hydrogen terminating SiC. As a consequence, the system becomes highly n-doped. Comparison to DFT calculations shows that the band dispersion, as determined by ARPES, deviates from the band structure expected for Bernal-stacked bilayer graphene. Instead, the electronic structure closely matches AA-stacked bilayer graphene on Ca-terminated SiC, indicating a spontaneous transition from AB- to AA-stacked bilayer graphene following calcium intercalation of the underlying graphene-SiC interface. △ Less

Submitted 4 November, 2023; originally announced November 2023.

Comments: 14 pages, 3 figures

Increasing the Rate of Magnesium Intercalation Underneath Epitaxial Graphene on 6H-SiC(0001)

Authors: Jimmy C. Kotsakidis, Marc Currie, Antonija Grubišić-Čabo, Anton Tadich, Rachael L. Myers-Ward, Matthew DeJarld, Kevin M. Daniels, Chang Liu, Mark T. Edmonds, Amadeo L. Vázquez de Parga, Michael S. Fuhrer, D. Kurt Gaskill

Abstract: Magnesium intercalated 'quasi-freestanding' bilayer graphene on 6H-SiC(0001) (Mg-QFSBLG) has many favorable properties (e.g., highly n-type doped, relatively stable in ambient conditions). However, intercalation of Mg underneath monolayer graphene is challenging, requiring multiple intercalation steps. Here, we overcome these challenges and subsequently increase the rate of Mg intercalation by las… ▽ More Magnesium intercalated 'quasi-freestanding' bilayer graphene on 6H-SiC(0001) (Mg-QFSBLG) has many favorable properties (e.g., highly n-type doped, relatively stable in ambient conditions). However, intercalation of Mg underneath monolayer graphene is challenging, requiring multiple intercalation steps. Here, we overcome these challenges and subsequently increase the rate of Mg intercalation by laser patterning (ablating) the graphene to form micron-sized discontinuities. We then use low energy electron diffraction to verify Mg-intercalation and conversion to Mg-QFSBLG, and X-ray photoelectron spectroscopy to determine the Mg intercalation rate for patterned and non-patterned samples. By modeling Mg intercalation with the Verhulst equation, we find that the intercalation rate increase for the patterned sample is 4.5$\pm$1.7. Since the edge length of the patterned sample is $\approx$5.2 times that of the non-patterned sample, the model implies that the increased intercalation rate is proportional to the increase in edge length. Moreover, Mg intercalation likely begins at graphene discontinuities in pristine samples (not step edges or flat terraces), where the 2D-like crystal growth of Mg-silicide proceeds. Our laser patterning technique may enable the rapid intercalation of other atomic or molecular species, thereby expanding upon the library of intercalants used to modify the characteristics of graphene, or other 2D materials and heterostructures. △ Less

Submitted 27 July, 2023; originally announced July 2023.

Comments: 24 pages, 4 figures

Journal ref: Advanced Materials Interfaces 8.23 (2021): 2101598

An efficient low-density grating setup for monochromatization of XUV ultrafast light sources

Authors: Qinda Guo, Maciej Dendzik, Magnus H. Berntsen, Antonija Grubišić-Čabo, Cong Li, Wanyu Chen, Yang Wang, Oscar Tjernberg

Abstract: Ultrafast light sources have become an indispensable tool to access and understand transient phenomenon in material science. However, a simple and easy-to-implement method for harmonic selection, with high transmission efficiency and pulse duration conservation, is still a challenge. Here we showcase and compare two approaches for selecting the desired harmonic from a high harmonic generation sour… ▽ More Ultrafast light sources have become an indispensable tool to access and understand transient phenomenon in material science. However, a simple and easy-to-implement method for harmonic selection, with high transmission efficiency and pulse duration conservation, is still a challenge. Here we showcase and compare two approaches for selecting the desired harmonic from a high harmonic generation source while achieving the above goals. The first approach is the combination of extreme ultraviolet spherical mirrors with transmission filters and the second approach uses a normal-incidence spherical grating. Both solutions target time- and angle-resolved photoemission spectroscopy with photon energies in the 10-20 eV range but are relevant for other experimental techniques as well. The two approaches for harmonic selection are characterized in terms of focusing quality, efficiency, and temporal broadening. It is demonstrated that a focusing grating is able to provide much higher transmission as compared to the mirror+filter approach (3.3 times higher for 10.8 eV and 12.9 times higher for 18.1 eV), with only a slight temporal broadening (6.8% increase) and a somewhat larger spot size (~30% increase). Overall, our study establishes an experimental perspective on the trade-off between a single grating normal incidence monochromator design and the use of filters. As such, it provides a basis for selecting the most appropriate approach in various fields where an easy-to-implement harmonic selection from high harmonic generation is needed. △ Less

Submitted 13 October, 2022; originally announced October 2022.

In-situ exfoliation method of large-area 2D materials

Authors: Antonija Grubišić-Čabo, Matteo Michiardi, Charlotte E. Sanders, Marco Bianchi, Davide Curcio, Dibya Phuyal, Magnus H. Berntsen, Qinda Guo, Maciej Dendzik

Abstract: The success in studying 2D materials inherently relies on producing samples of large area, and high quality enough for the experimental conditions. Because their 2D nature surface sensitive techniques such as photoemission spectroscopy , tunneling microscopy and electron diffraction, that work in ultra high vacuum (UHV) environment are prime techniques that have been employed with great success in… ▽ More The success in studying 2D materials inherently relies on producing samples of large area, and high quality enough for the experimental conditions. Because their 2D nature surface sensitive techniques such as photoemission spectroscopy , tunneling microscopy and electron diffraction, that work in ultra high vacuum (UHV) environment are prime techniques that have been employed with great success in unveiling new properties of 2D materials but it requires samples to be free of adsorbates. The technique that most easily and readily yields 2dmaterials of highest quality is indubitably mechanical exfoliation from bulk grown samples, however as this technique is traditionally done in dedicated environment, the transfer of these samples into UHV setups requires some form of surface cleaning that tempers with the sample quality. In this article, we report on a simple and general method of \textit{in-situ} mechanical exfoliation directly in UHV that yields large-area single-layered films. By employing standard UHV cleaning techniques and by purpusedly exploiting the chemical affinity between the substrate and the sample we could yield large area exfoliation of transition metal dichalcogenides. Multiple transition metal dichalcogenides, both metallic and semiconducting, are exfoliated \textit{in-situ} onto Au and Ag, and Ge. Exfoliated flakes are found to be sub-milimeter size with excellent crystallinity and purity, as evidenced by angle-resolved photoemission spectroscopy, atomic force microscopy and low-energy electron diffraction. In addition, we demonstrate exfoliation of air-sensitive 2D materials and possibility of controlling the substrate-2D material twist angle. △ Less

Submitted 29 September, 2022; originally announced September 2022.

Journal ref: Adv. Sci. 2023, 2301243

A narrow bandwidth extreme ultra-violet light source for time- and angle-resolved photoemission spectroscopy

Authors: Qinda Guo, Maciej Dendzik, Antonija Grubišić-Čabo, Magnus H. Berntsen, Cong Li, Wanyu Chen, Bharti Matta, Ulrich Starke, Björn Hessmo, Jonas Weissenrieder, Oscar Tjernberg

Abstract: Here we present a high repetition rate, narrow band-width, extreme ultraviolet (XUV) photon source for time- and angle-resolved photoemission spectroscopy (tr-ARPES). The narrow band width pulses $ΔE=9, 14, 18$ meV for photon energies $hν=10.8, 18.1, 25.3$ eV are generated through High Harmonic Generation (HHG) using ultra-violet (UV) drive pulses with relatively long pulse lengths (461 fs). The H… ▽ More Here we present a high repetition rate, narrow band-width, extreme ultraviolet (XUV) photon source for time- and angle-resolved photoemission spectroscopy (tr-ARPES). The narrow band width pulses $ΔE=9, 14, 18$ meV for photon energies $hν=10.8, 18.1, 25.3$ eV are generated through High Harmonic Generation (HHG) using ultra-violet (UV) drive pulses with relatively long pulse lengths (461 fs). The HHG setup employs an annuluar drive beam in a tight focusing geometry at a repetition rate of 250 kHz. Photon energy selection is provided by a series of selectable multilayer bandpass mirrors and thin film filters, thus avoiding any time broadening introduced by single grating monochromators. A two stage optical-parametric amplifier provides $< 100$ fs tunable pump pulses from 0.65 $μ$m to 9 $μ$m. The narrow bandwidth performance of the light source is demonstrated through ARPES measurements on a series of quantum materials including the high-temperature superconductor Bi-2212, WSe$_2$ and graphene. △ Less

Submitted 1 May, 2022; v1 submitted 28 January, 2022; originally announced January 2022.

Journal ref: Structural Dynamics 9.2 (2022): 024304

Low Temperature Growth of Graphene on Semiconductor

Authors: Håkon I. Røst, Rajesh K. Chellappan, Frode S. Strand, Antonija Grubišić-Čabo, Benjamen P. Reed, Mauricio J. Prieto, Liviu C. Tǎnase, Lucas de Souza Caldas, Thipusa Wongpinij, Chanan Euaruksakul, Thomas Schmidt, Anton Tadich, Bruce C. C. Cowie, Zheshen Li, Simon P. Cooil, Justin W. Wells

Abstract: The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around $450-500^\circ\text{C}$. From the chemical r… ▽ More The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around $450-500^\circ\text{C}$. From the chemical reaction between SiC and thin films of Fe or Ru, $\text{sp}^{3}$ carbon is liberated from the SiC crystal and converted to $\text{sp}^{2}$ carbon at the surface. The quality of the graphene is demonstrated using angle-resolved photoemission spectroscopy and low-energy electron diffraction. Furthermore, the orientation and placement of the graphene layers relative to the SiC substrate is verified using angle-resolved absorption spectroscopy and energy-dependent photoelectron spectroscopy, respectively. With subsequent thermal treatments to higher temperatures, a steerable diffusion of the metal layers into the bulk SiC is achieved. The result is graphene supported on magnetic silicide or optionally, directly on semiconductor, at temperatures ideal for further large-scale processing into graphene based device structures. △ Less

Submitted 27 November, 2020; originally announced November 2020.

Comments: 10 pages, 4 figures, 51 references

Crossover from 2D ferromagnetic insulator to wide bandgap quantum anomalous Hall insulator in ultra-thin MnBi2Te4

Authors: Chi Xuan Trang, Qile Li, Yuefeng Yin, **woong Hwang, Golrokh Akhgar, Iolanda Di Bernardo, Antonija Grubišić-Čabo, Anton Tadich, Michael S. Fuhrer, Sung- Kwan Mo, Nikhil Medhekar, Mark T. Edmonds

Abstract: Intrinsic magnetic topological insulators offer low disorder and large magnetic bandgaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the Quantum Anomalous Hall (QAH) effect and axion insulator phases have been realised. These observations occur at temperatures significantly lower than the Neel temperature o… ▽ More Intrinsic magnetic topological insulators offer low disorder and large magnetic bandgaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the Quantum Anomalous Hall (QAH) effect and axion insulator phases have been realised. These observations occur at temperatures significantly lower than the Neel temperature of bulk MnBi2Te4, and measurement of the magnetic energy gap at the Dirac point in ultra-thin MnBi2Te4 has yet to be achieved. Critical to achieving the promise of this system is a direct measurement of the layer-dependent energy gap and verifying whether the gap is magnetic in the QAH phase. Here we utilise temperature dependent angle-resolved photoemission spectroscopy to study epitaxial ultra-thin MnBi2Te4. We directly observe a layer dependent crossover from a 2D ferromagnetic insulator with a bandgap greater than 780 meV in one septuple layer (1 SL) to a QAH insulator with a large energy gap (>100 meV) at 8 K in 3 and 5 SL MnBi2Te4. The QAH gap is confirmed to be magnetic in origin, as it abruptly diminishes with increasing temperature above 8 K. The direct observation of a large magnetic energy gap in the QAH phase of few-SL MnBi2Te4 is promising for further increasing the operating temperature of QAH materials. △ Less

Submitted 16 March, 2021; v1 submitted 13 September, 2020; originally announced September 2020.

Journal ref: ACS Nano 2021, 15, 8, 13444-13452

Magnesium-intercalated graphene on SiC: highly n-doped air-stable bilayer graphene at extreme displacement fields

Authors: Antonija Grubišić-Čabo, Jimmy C. Kotsakidis, Yuefeng Yin, Anton Tadich, Matthew Haldon, Sean Solari, Iolanda di Bernardo, Kevin M. Daniels, John Riley, Eric Huwald, Mark T. Edmonds, Rachael Myers-Ward, Nikhil V. Medhekar, D. Kurt Gaskill, Michael S. Fuhrer

Abstract: We use angle-resolved photoemission spectroscopy to investigate the electronic structure of bilayer graphene at high n-do** and extreme displacement fields, created by intercalating epitaxial monolayer graphene on silicon carbide with magnesium to form quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide. Angle-resolved photoemission spectroscopy reveals that upon magnesiu… ▽ More We use angle-resolved photoemission spectroscopy to investigate the electronic structure of bilayer graphene at high n-do** and extreme displacement fields, created by intercalating epitaxial monolayer graphene on silicon carbide with magnesium to form quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide. Angle-resolved photoemission spectroscopy reveals that upon magnesium intercalation, the single massless Dirac band of epitaxial monolayer graphene is transformed into the characteristic massive double-band Dirac spectrum of quasi-freestanding bilayer graphene. Analysis of the spectrum using a simple tight binding model indicates that magnesium intercalation results in an n-type do** of 2.1 $\times$ 10$^{14}$ cm$^{-2}$, creates an extremely high displacement field of 2.6 V/nm, opening a considerable gap of 0.36 eV at the Dirac point. This is further confirmed by density-functional theory calculations for quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide, which show a similar do** level, displacement field and bandgap. Finally, magnesium-intercalated samples are surprisingly robust to ambient conditions; no significant changes in the electronic structure are observed after 30 minutes exposure in air. △ Less

Submitted 27 August, 2020; v1 submitted 6 May, 2020; originally announced May 2020.

Comments: 46 pages including supporting information, 4 figures in the main paper and 9 figures in the supporting information

Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer - SiC(0001) Interface

Authors: Jimmy C. Kotsakidis, Antonija Grubišić-Čabo, Yuefeng Yin, Anton Tadich, Rachael L. Myers-Ward, Matthew Dejarld, Shojan P. Pavunny, Marc Currie, Kevin M. Daniels, Chang Liu, Mark T. Edmonds, Nikhil V. Medhekar, D. Kurt Gaskill, Amadeo L. Vazquez de Parga, Michael S. Fuhrer

Abstract: The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been reported. Here, we use low energy electron diffraction, x-ray photoelectron spectroscopy, secondary electron cut-off photoemission and scanning tunneling microscopy… ▽ More The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been reported. Here, we use low energy electron diffraction, x-ray photoelectron spectroscopy, secondary electron cut-off photoemission and scanning tunneling microscopy to elucidate the physical and electronic structure of both Ca- and Mg-intercalated epitaxial graphene on 6H-SiC(0001). We find that Ca intercalates underneath the buffer layer and bonds to the Si-terminated SiC surface, breaking the C-Si bonds of the buffer layer i.e. 'freestanding' the buffer layer to form Ca-intercalated quasi-freestanding bilayer graphene (Ca-QFSBLG). The situation is similar for the Mg-intercalation of epitaxial graphene on SiC(0001), where an ordered Mg-terminated reconstruction at the SiC surface and Mg bonds to the Si-terminated SiC surface are formed, resulting in Mg-intercalated quasi-freestanding bilayer graphene (Mg-QFSBLG). Ca-intercalation underneath the buffer layer has not been considered in previous studies of Ca-intercalated epitaxial graphene. Furthermore, we find no evidence that either Ca or Mg intercalates between graphene layers. However, we do find that both Ca-QFSBLG and Mg-QFSBLG exhibit very low workfunctions of 3.68 and 3.78 eV, respectively, indicating high n-type do**. Upon exposure to ambient conditions, we find Ca-QFSBLG degrades rapidly, whereas Mg-QFSBLG remains remarkably stable. △ Less

Submitted 13 July, 2020; v1 submitted 3 April, 2020; originally announced April 2020.

Comments: 58 pages, 10 figures, 4 tables. Revised text and figures

Electronic bandstructure of in-plane ferroelectric van der Waals $β'-In_{2}Se_{3}$

Authors: James L. Collins, Chutian Wang, Anton Tadich, Yuefeng Yin, Changxi Zheng, Jack Hellerstedt, Antonija Grubišić-Čabo, Shujie Tang, Sung-Kwan Mo, John Riley, Eric Huwald, Nikhil V. Medhekar, Michael S. Fuhrer, Mark T. Edmonds

Abstract: Layered indium selenides ($In_{2}Se_{3}$) have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the $α$ and $β$' phases, respectively. In this work, we utilise angle-resolved photoelectron spectroscopy to directly measure the electronic bandstructure of $β'-In_{2}Se_{3}$, and compare to hybrid density functional theory (DFT) calculations. In agreement with DFT,… ▽ More Layered indium selenides ($In_{2}Se_{3}$) have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the $α$ and $β$' phases, respectively. In this work, we utilise angle-resolved photoelectron spectroscopy to directly measure the electronic bandstructure of $β'-In_{2}Se_{3}$, and compare to hybrid density functional theory (DFT) calculations. In agreement with DFT, we find the band structure is highly two-dimensional, with negligible dispersion along the c-axis. Due to n-type do** we are able to observe the conduction band minima, and directly measure the minimum indirect (0.97 eV) and direct (1.46 eV) bandgaps. We find the Fermi surface in the conduction band is characterized by anisotropic electron pockets with sharp in-plane dispersion about the $\overline{M}$ points, yielding effective masses of 0.21 $m_{0}$ along $\overline{KM}$ and 0.33 $m_{0}$ along $\overline{ΓM}$. The measured band structure is well supported by hybrid density functional theory calculations. The highly two-dimensional (2D) bandstructure with moderate bandgap and small effective mass suggest that $β'-In_{2}Se_{3}$ is a potentially useful new van der Waals semiconductor. This together with its ferroelectricity makes it a viable material for high-mobility ferroelectric-photovoltaic devices, with applications in non-volatile memory switching and renewable energy technologies. △ Less

Submitted 17 February, 2020; v1 submitted 14 October, 2019; originally announced October 2019.

Comments: 19 pages, 4 + 1 figures; typos corrected;added references; updated figures & discussion to reflect changes in model