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Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants
Authors:
A. Shirkhorshidian,
N. C. Bishop,
J. Dominguez,
R. K. Grubbs,
J. R. Wendt,
M. P. Lilly,
M. S. Carroll
Abstract:
We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the point contact transport indicative of transport through the Sb donors. We fit the differential conductance to a r…
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We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the point contact transport indicative of transport through the Sb donors. We fit the differential conductance to a rectangular tunnel barrier model with a linear barrier height dependence on source-drain voltage and non-linear dependence on gate bias. Effects such as Fowler-Nordheim (FN) tunneling and image charge barrier lowering (ICBL) are considered. Barrier heights and widths are estimated for the entire range of relevant biases. The barrier heights at the locations of some of the resonances for the implanted tunnel barrier are between 15-20 meV, which are consistent with transport through shallow partially hybridized Sb donors. The dependence of width and barrier height on gate voltage is found to be linear over a wide range of gate bias in the split gate geometry but deviates considerably when the barrier becomes large and is not described completely by standard 1D models such as FN or ICBL effects.
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Submitted 14 January, 2015;
originally announced January 2015.
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Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
Authors:
E. P. Nordberg,
H. L. Stalford,
R. Young,
G. A. Ten Eyck,
K. Eng,
L. A. Tracy,
K. D. Childs,
J. R. Wendt,
R. K. Grubbs,
J. Stevens,
M. P. Lilly,
M. A. Eriksson,
M. S. Carroll
Abstract:
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between t…
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Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between the dot and a nearby lead. We extract the coupling capacitance between the charge sensor and the quantum dot, and we show that it agrees well with a 3D capacitance model of the integrated sensor and quantum dot system.
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Submitted 18 September, 2009;
originally announced September 2009.
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Enhancement mode double top gated MOS nanostructures with tunable lateral geometry
Authors:
E. P. Nordberg,
G. A. Ten Eyck,
H. L. Stalford,
R. P. Muller,
R. W. Young,
K. Eng,
L. A. Tracy,
K. D. Childs,
J. R. Wendt,
R. K. Grubbs,
J. Stevens,
M. P. Lilly,
M. A. Eriksson,
M. S. Carroll
Abstract:
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect…
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We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect densities (i.e. interface traps and fixed oxide charge) are measured for critical process steps, and we correlate low disorder behavior with a quantitative defect density. This work provides quantitative guidance that has not been previously established about defect densities for which Si quantum dots do not exhibit parasitic dot formation. These devices make use of a double-layer gate stack in which many regions, including the critical gate oxide, were fabricated in a fully-qualified CMOS facility.
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Submitted 11 September, 2009; v1 submitted 19 June, 2009;
originally announced June 2009.
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Dielectric properties and lattice dynamics of Ca-doped K$_{0.95}$Li$_{0.05}$TaO$_{3}$
Authors:
S. Wakimoto,
G. A. Samara,
R. K. Grubbs,
E. L. Venturini,
L. A. Boatner,
G. Xu,
G. Shirane,
S. -H. Lee
Abstract:
Relaxor behavior and lattice dynamics have been studied for a single crystal of K$_{1-x}$Li$_x$TaO$_3$ $(x=0.05)$, where a small amount of a Ca impurity ($\sim 15$~ppm) was incorporated. The dielectric measurements revealed Debye-like relaxations with Arrhenius activation energies of 80 and 240 meV that are assigned to Li$^+$ dipoles and the Li$^+$-Li$^+$ dipolar pairs, respectively. In the neut…
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Relaxor behavior and lattice dynamics have been studied for a single crystal of K$_{1-x}$Li$_x$TaO$_3$ $(x=0.05)$, where a small amount of a Ca impurity ($\sim 15$~ppm) was incorporated. The dielectric measurements revealed Debye-like relaxations with Arrhenius activation energies of 80 and 240 meV that are assigned to Li$^+$ dipoles and the Li$^+$-Li$^+$ dipolar pairs, respectively. In the neutron scattering results, diffuse scattering ridges appear around the nuclear Bragg peaks below $\sim 150$ K and phonon line broadening features start to appear at even higher temperatures suggesting that polar nano-regions (PNR's) start to form at these temperatures. These results are supported by the dielectric data that reveal relaxor behavior starting at $\sim 200$ K on cooling. From analyses of the diffuse intensities, the displacements include a uniform phase shift of all of the atoms in addition to the atomic displacements corresponding to a polarization vector of the transverse optic soft ferroelectric mode, a finding that is analogous to that in the prototypical relaxor material Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$.
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Submitted 3 August, 2006;
originally announced August 2006.
