Chemical control of the charge state of nitrogen-vacancy centers in diamond
Authors:
M. V. Hauf,
B. Grotz,
B. Naydenov,
M. Dankerl,
S. Pezzagna,
J. Meijer,
F. Jelezko,
J. Wrachtrup,
M. Stutzmann,
F. Reinhard,
J. A. Garrido
Abstract:
We investigate the effect of surface termination on the charge state of nitrogen vacancy centers, which have been ion-implanted few nanometers below the surface of diamond. We find that, when changing the surface termination from oxygen to hydrogen, previously stable NV- centers convert into NV0 and, subsequently, into an unknown non-fluorescent state. This effect is found to depend strongly on th…
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We investigate the effect of surface termination on the charge state of nitrogen vacancy centers, which have been ion-implanted few nanometers below the surface of diamond. We find that, when changing the surface termination from oxygen to hydrogen, previously stable NV- centers convert into NV0 and, subsequently, into an unknown non-fluorescent state. This effect is found to depend strongly on the implantation dose. Simulations of the electronic band structure confirm the dissappearance of NV- in the vicinity of the hydrogen-terminated surface. The band bending, which induces a p-type surface conductive layer leads to a depletion of electrons in the nitrogen vacancies close to the surface. Therefore, hydrogen surface termination provides a chemical way for the control of the charge state of nitrogen-vacancy centers in diamond. Furthermore, it opens the way to an electrostatic control of the charge state with the use of an external gate electrode.
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Submitted 15 December, 2010; v1 submitted 23 November, 2010;
originally announced November 2010.
