Two-dimensional superconductivity induced by high-mobility carrier do** in LaTiO3/SrTiO3 hetero-structures
Authors:
J. Biscaras,
N. Bergeal,
S. Hurand,
C. Grossetete,
A. Rastogi,
R. C. Budhani,
D. LeBoeuf,
C. Proust,
J. Lesueur
Abstract:
In this letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers : a majority of low-mobility carriers always present, and a few high-mobility ones that can be injected by electrostatic do**. The calculation of the electrons spatial d…
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In this letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers : a majority of low-mobility carriers always present, and a few high-mobility ones that can be injected by electrostatic do**. The calculation of the electrons spatial distribution in the confinement potential shows that the high-mobility electrons responsible for superconductivity set at the edge of the gas whose extension can be tuned by field effect.
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Submitted 4 June, 2012; v1 submitted 12 December, 2011;
originally announced December 2011.
