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A Compact Delay Model for OTS Devices
Authors:
M. M. Al Chawa,
R. Tetzlaff,
D. Bedau,
J. W. Reiner,
D. A. Stewart,
M. K. Grobis
Abstract:
This paper presents a novel compact delay model of Ovonic Threshold Switch (OTS) devices that works efficiently for circuit simulations. The internal state variable of the two terminal devices is estimated using a delay system that uses a few electrical components related to a suggested equivalent circuit of the device. Finally, we tested the proposed model against measured data from devices fabri…
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This paper presents a novel compact delay model of Ovonic Threshold Switch (OTS) devices that works efficiently for circuit simulations. The internal state variable of the two terminal devices is estimated using a delay system that uses a few electrical components related to a suggested equivalent circuit of the device. Finally, we tested the proposed model against measured data from devices fabricated by Western Digital Research.
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Submitted 12 May, 2024;
originally announced May 2024.
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A Compact Model of Threshold Switching Devices for Efficient Circuit Simulations
Authors:
Mohamad Moner Al Chawa,
Daniel Bedau,
Ahmet S. Demirkol,
James W. Reiner,
Derek A. Stewart,
Michael K. Grobis,
Ronald Tetzlaff
Abstract:
In this paper, we present a new compact model of threshold switching devices which is suitable for efficient circuit-level simulations. First, a macro model, based on a compact transistor based circuit, was implemented in LTSPICE. Then, a descriptive model was extracted and implemented in MATLAB, which is based on the macro model. This macro model was extended to develop a physical model that desc…
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In this paper, we present a new compact model of threshold switching devices which is suitable for efficient circuit-level simulations. First, a macro model, based on a compact transistor based circuit, was implemented in LTSPICE. Then, a descriptive model was extracted and implemented in MATLAB, which is based on the macro model. This macro model was extended to develop a physical model that describes the processes that occur during the threshold switching. The physical model derived comprises a delay structure with few electrical components adjacent to the second junction. The delay model incorporates an internal state variable, which is crucial to transform the descriptive model into a compact model and to parameterize it in terms of electrical parameters that represent the component's behavior. Finally, we applied our model by fitting measured i-v data of an OTS device manufactured by Western Digital Research.
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Submitted 3 August, 2023;
originally announced August 2023.
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Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices
Authors:
Kiumars Aryana,
John T. Gaskins,
Joyeeta Nag,
Derek A. Stewart,
Zhaoqiang Bai,
Saikat Mukhopadhyay,
John C. Read,
David H. Olson,
Eric R. Hoglund,
James M. Howe,
Ashutosh Giri,
Michael K. Grobis,
Patrick E. Hopkins
Abstract:
Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close…
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Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs.
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Submitted 10 November, 2020;
originally announced November 2020.
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Template-Assisted Direct Growth of 1Td/in$^2$ Bit Patterned Media
Authors:
En Yang,
Zuwei Liu,
Hitesh Arora,
Tsai-wei Wu,
Vipin Ayanoor-Vitikkate,
Detlef Spoddig,
Daniel Bedau,
Michael Grobis,
Bruce A. Gurney,
Thomas R. Albrecht,
Bruce Terris
Abstract:
We present a method for growing bit patterned magnetic recording media using directed growth of sputtered granular perpendicular magnetic recording media. The grain nucleation is templated using an epitaxial seed layer which contains Pt pillars separated by amorphous metal oxide. The scheme enables the creation of both templated data and servo regions suitable for high density hard disk drive oper…
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We present a method for growing bit patterned magnetic recording media using directed growth of sputtered granular perpendicular magnetic recording media. The grain nucleation is templated using an epitaxial seed layer which contains Pt pillars separated by amorphous metal oxide. The scheme enables the creation of both templated data and servo regions suitable for high density hard disk drive operation. We illustrate the importance of using a process that is both topographically and chemically driven to achieve high quality media.
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Submitted 16 June, 2016;
originally announced June 2016.
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Two-dimensional Decoding Algorithms and Recording Techniques for Bit Patterned Media Feasibility Demonstrations
Authors:
Yuri Obukhov,
Pierre-Olivier Jubert,
Daniel Bedau,
Michael Grobis
Abstract:
Recording experiments and decoding algorithms are presented for evaluating the bit-error-rate of state-of-the-art magnetic bitpatterned media. The recording experiments are performed with a static tester and conventional hard-disk-drive heads. As the reader dimensions are larger than the bit dimensions in both the down-track and the cross-track directions, a two-dimensional bit decoding algorithm…
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Recording experiments and decoding algorithms are presented for evaluating the bit-error-rate of state-of-the-art magnetic bitpatterned media. The recording experiments are performed with a static tester and conventional hard-disk-drive heads. As the reader dimensions are larger than the bit dimensions in both the down-track and the cross-track directions, a two-dimensional bit decoding algorithm is required. Two such algorithms are presented in details together with the methodology implemented to accurately retrieve island positions during recording. Using these techniques, a 1.6 Td/in$^2$ magnetic bit pattern media is demonstrated to support 2D bit error rates below 1e-2 under shingled magnetic recording conditions.
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Submitted 1 June, 2015;
originally announced June 2015.
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Bit Patterned Magnetic Recording: Theory, Media Fabrication, and Recording Performance
Authors:
Thomas R. Albrecht,
Hitesh Arora,
Vipin Ayanoor-Vitikkate,
Jean-Marc Beaujour,
Daniel Bedau,
David Berman,
Alexei L. Bogdanov,
Yves-Andre Chapuis,
Julia Cushen,
Elizabeth E. Dobisz,
Gregory Doerk,
He Gao,
Michael Grobis,
Bruce Gurney,
Weldon Hanson,
Olav Hellwig,
Toshiki Hirano,
Pierre-Olivier Jubert,
Dan Kercher,
Jeffrey Lille,
Zuwei Liu,
C. Mathew Mate,
Yuri Obukhov,
Kanaiyalal C. Patel,
Kurt Rubin
, et al. (6 additional authors not shown)
Abstract:
Bit Patterned Media (BPM) for magnetic recording provide a route to densities $>1 Tb/in^2$ and circumvents many of the challenges associated with conventional granular media technology. Instead of recording a bit on an ensemble of random grains, BPM uses an array of lithographically defined isolated magnetic islands, each of which stores one bit. Fabrication of BPM is viewed as the greatest challe…
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Bit Patterned Media (BPM) for magnetic recording provide a route to densities $>1 Tb/in^2$ and circumvents many of the challenges associated with conventional granular media technology. Instead of recording a bit on an ensemble of random grains, BPM uses an array of lithographically defined isolated magnetic islands, each of which stores one bit. Fabrication of BPM is viewed as the greatest challenge for its commercialization. In this article we describe a BPM fabrication method which combines e-beam lithography, directed self-assembly of block copolymers, self-aligned double patterning, nanoimprint lithography, and ion milling to generate BPM based on CoCrPt alloys. This combination of fabrication technologies achieves feature sizes of $<10 nm$, significantly smaller than what conventional semiconductor nanofabrication methods can achieve. In contrast to earlier work which used hexagonal close-packed arrays of round islands, our latest approach creates BPM with rectangular bitcells, which are advantageous for integration with existing hard disk drive technology. The advantages of rectangular bits are analyzed from a theoretical and modeling point of view, and system integration requirements such as servo patterns, implementation of write synchronization, and providing for a stable head-disk interface are addressed in the context of experimental results. Optimization of magnetic alloy materials for thermal stability, writeability, and switching field distribution is discussed, and a new method for growing BPM islands on a patterned template is presented. New recording results at $1.6 Td/in^2$ (teradot/inch${}^2$, roughly equivalent to $1.3 Tb/in^2$) demonstrate a raw error rate $<10^{-2}$, which is consistent with the recording system requirements of modern hard drives. Extendibility of BPM to higher densities, and its eventual combination with energy assisted recording are explored.
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Submitted 19 March, 2015;
originally announced March 2015.
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Dynamics of single-domain magnetic particles at elevated temperatures
Authors:
Michail Tzoufras,
Gregory J. Parker,
Michael K. Grobis
Abstract:
A stochastic differential equation that describes the dynamics of single-domain magnetic particles at any temperature is derived using a classical formalism. The deterministic terms recover existing theory and the stochastic process takes the form of a mean-reverting random walk. In the ferromagnetic state diffusion is predominantly angular and the relevant diffusion coefficient increases linearly…
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A stochastic differential equation that describes the dynamics of single-domain magnetic particles at any temperature is derived using a classical formalism. The deterministic terms recover existing theory and the stochastic process takes the form of a mean-reverting random walk. In the ferromagnetic state diffusion is predominantly angular and the relevant diffusion coefficient increases linearly with temperature before saturating at the Curie point ($T_c$). Diffusion in the macrospin magnitude, while vanishingly small at room temperature, increases sharply as the system approaches $T_c$. Beyond $T_c$, in the paramagnetic state, diffusion becomes isotropic and independent of temperature. The stochastic macrospin model agrees well with atomistic simulations.
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Submitted 20 April, 2015; v1 submitted 25 October, 2014;
originally announced October 2014.
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Nonsaturating Dephasing Time at Low Temperature in an Open Quantum Dot
Authors:
I. G. Rau,
S. Amasha,
M. Grobis,
R. M. Potok,
Hadas Shtrikman,
D. Goldhaber-Gordon
Abstract:
We report measurements of the electron dephasing time extracted from the weak localization (WL) correction to the average conductance in an open AlGaAs/GaAs quantum dot from 1 K to 13 mK. In agreement with theoretical predictions but in contrast with previous measurements in quantum dots, the extracted dephasing time does not saturate at the lowest temperatures. We find that the dephasing time fol…
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We report measurements of the electron dephasing time extracted from the weak localization (WL) correction to the average conductance in an open AlGaAs/GaAs quantum dot from 1 K to 13 mK. In agreement with theoretical predictions but in contrast with previous measurements in quantum dots, the extracted dephasing time does not saturate at the lowest temperatures. We find that the dephasing time follows an inverse linear power law with temperature. We determine that the extraction of the dephasing time from WL is applicable down to our lowest temperatures, but extraction from finite magnetic field conductance fluctuations is complicated by charging effects below 13 mK.
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Submitted 29 September, 2012;
originally announced October 2012.
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Spatially probed electron-electron scattering in a two-dimensional electron gas
Authors:
M. P. Jura,
M. Grobis,
M. A. Topinka,
L. N. Pfeiffer,
K. W. West,
D. Goldhaber-Gordon
Abstract:
Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beam's injection energy, and distance from the injection point. At low injection energies, we find electrons in the beam scatter by small-angles, as has been previously observed. At high injection energies, we find a surprising result: placing the…
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Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beam's injection energy, and distance from the injection point. At low injection energies, we find electrons in the beam scatter by small-angles, as has been previously observed. At high injection energies, we find a surprising result: placing the SGM tip where it back-scatters electrons increases the differential conductance through the system. This effect is explained by a non-equilibrium distribution of electrons in a localized region of 2DEG near the injection point. Our data indicate that the spatial extent of this highly non-equilibrium distribution is within ~1 micrometer of the injection point. We approximate the non-equilibrium region as having an effective temperature that depends linearly upon injection energy.
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Submitted 30 October, 2010;
originally announced November 2010.
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Coulomb Blockade in an Open Quantum Dot
Authors:
S. Amasha,
I. G. Rau,
M. Grobis,
R. M. Potok,
H. Shtrikman,
D. Goldhaber-Gordon
Abstract:
We report the observation of Coulomb blockade in a quantum dot contacted by two quantum point contacts each with a single fully-transmitting mode, a system previously thought to be well described without invoking Coulomb interactions. At temperatures below 50 mK we observe a periodic oscillation in the conductance of the dot with gate voltage that corresponds to a residual quantization of charge.…
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We report the observation of Coulomb blockade in a quantum dot contacted by two quantum point contacts each with a single fully-transmitting mode, a system previously thought to be well described without invoking Coulomb interactions. At temperatures below 50 mK we observe a periodic oscillation in the conductance of the dot with gate voltage that corresponds to a residual quantization of charge. From the temperature and magnetic field dependence, we infer the oscillations are Mesoscopic Coulomb Blockade, a type of Coulomb blockade caused by electron interference in an otherwise open system.
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Submitted 27 September, 2010;
originally announced September 2010.
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Electron interferometer formed with a scanning probe tip and quantum point contact
Authors:
M. P. Jura,
M. A. Topinka,
M. Grobis,
L. N. Pfeiffer,
K. W. West,
D. Goldhaber-Gordon
Abstract:
We show an electron interferometer between a quantum point contact (QPC) and a scanning gate microscope (SGM) tip in a two-dimensional electron gas. The QPC and SGM tip act as reflective barriers of a lossy cavity; the conductance through the system thus varies as a function of the distance between the QPC and SGM tip. We characterize how temperature, electron wavelength, cavity length, and reflec…
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We show an electron interferometer between a quantum point contact (QPC) and a scanning gate microscope (SGM) tip in a two-dimensional electron gas. The QPC and SGM tip act as reflective barriers of a lossy cavity; the conductance through the system thus varies as a function of the distance between the QPC and SGM tip. We characterize how temperature, electron wavelength, cavity length, and reflectivity of the QPC barrier affect the interferometer. We report checkerboard interference patterns near the QPC and, when injecting electrons above or below the Fermi energy, effects of dephasing.
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Submitted 19 September, 2010;
originally announced September 2010.
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Tuning fulleride electronic structure and molecular ordering via variable layer index
Authors:
Yayu Wang,
Ryan Yamachika,
Andre Wachowiak,
Michael Grobis,
Michael F. Crommie
Abstract:
C60 fullerides are uniquely flexible molecular materials that exhibit a rich variety of behavior, including superconductivity and magnetism in bulk compounds, novel electronic and orientational phases in thin films, and quantum transport in a single-C60 transistor. The complexity of fulleride properties stems from the existence of many competing interactions, such as electron-electron correlatio…
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C60 fullerides are uniquely flexible molecular materials that exhibit a rich variety of behavior, including superconductivity and magnetism in bulk compounds, novel electronic and orientational phases in thin films, and quantum transport in a single-C60 transistor. The complexity of fulleride properties stems from the existence of many competing interactions, such as electron-electron correlations, electron-vibration coupling, and intermolecular hop**. The exact role of each interaction is controversial due to the difficulty of experimentally isolating the effects of a single interaction in the intricate fulleride materials. Here we report a unique level of control of the material properties of KxC60 ultra-thin films through well-controlled atomic layer indexing and accurate do** concentrations. Using STM techniques, we observe a series of electronic and structural phase transitions as the fullerides evolve from two-dimensional monolayers to quasi-threedimensional multilayers in the early stages of layer-by-layer growth. These results demonstrate the systematic evolution of fulleride electronic structure and molecular ordering with variable KxC60 film layer index, and shed new light on creating novel molecular structures and devices.
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Submitted 3 December, 2007;
originally announced December 2007.
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Novel Orientational Ordering and Reentrant Metallicity in KxC60 Monolayers for 3 <= x <= 5
Authors:
Yayu Wang,
R. Yamachika,
A. Wachowiak,
M. Grobis,
K. H. Khoo,
D. H. Lee,
Steven G. Louie,
M. F. Crommie
Abstract:
We have performed local STM studies on potassium-doped C60 (KxC60) monolayers over a wide regime of the phase diagram. As K content increases from x = 3 to 5, KxC60 monolayers undergo metal-insulator-metal reentrant phase transitions and exhibit a variety of novel orientational orderings. The most striking new structure has a pinwheel-like 7-molecule unit cell in insulating K4+dC60. We propose t…
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We have performed local STM studies on potassium-doped C60 (KxC60) monolayers over a wide regime of the phase diagram. As K content increases from x = 3 to 5, KxC60 monolayers undergo metal-insulator-metal reentrant phase transitions and exhibit a variety of novel orientational orderings. The most striking new structure has a pinwheel-like 7-molecule unit cell in insulating K4+dC60. We propose that the driving mechanism for the orientational ordering in KxC60 is the lowering of electron kinetic energy through maximization of the overlap of neighboring molecular orbitals over the entire do** range x = 3 to 5. In the insulating and metallic phases this gives rise to orbital versions of the superexchange and double-exchange interactions respectively.
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Submitted 3 December, 2007;
originally announced December 2007.
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Universal Scaling in Non-equilibrium Transport Through a Single-Channel Kondo Dot
Authors:
M. Grobis,
I. G. Rau,
R. M. Potok,
H. Shtrikman,
D. Goldhaber-Gordon
Abstract:
Scaling laws and universality play an important role in our understanding of critical phenomena and the Kondo effect. Here we present measurements of non-equilibrium transport through a single-channel Kondo quantum dot at low temperature and bias. We find that the low-energy Kondo conductance is consistent with universality between temperature and bias and characterized by a quadratic scaling ex…
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Scaling laws and universality play an important role in our understanding of critical phenomena and the Kondo effect. Here we present measurements of non-equilibrium transport through a single-channel Kondo quantum dot at low temperature and bias. We find that the low-energy Kondo conductance is consistent with universality between temperature and bias and characterized by a quadratic scaling exponent, as expected for the spin-1/2 Kondo effect. The non-equilibrium Kondo transport measurements are well-described by a universal scaling function with two scaling parameters.
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Submitted 30 April, 2008; v1 submitted 16 October, 2007;
originally announced October 2007.
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Phase Separation and Charge Transfer in a K-doped C60 Monolayer on Ag(001)
Authors:
M. Grobis,
R. Yamachika,
A. Wachowiak,
Xinghua Lu,
M. F. Crommie
Abstract:
We have performed a scanning tunneling microscopy and spectroscopy study of potassium-doped C60 monolayers (KxC60) on Ag(001) in the regime of x ~ 1. Low temperature annealing (640 K) leads to the formation of two well-ordered KxC60 phases that exhibit differing levels of electron charge transfer. Further annealing (710 K) distills out the higher electron-doped phase from the lower electron-dope…
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We have performed a scanning tunneling microscopy and spectroscopy study of potassium-doped C60 monolayers (KxC60) on Ag(001) in the regime of x ~ 1. Low temperature annealing (640 K) leads to the formation of two well-ordered KxC60 phases that exhibit differing levels of electron charge transfer. Further annealing (710 K) distills out the higher electron-doped phase from the lower electron-doped phase, leaving behind a third C60 phase completely devoid of K. Spectroscopic measurements indicate that the electron-do** level of the higher electron-doped KC60 phase is anomalously large.
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Submitted 7 August, 2009; v1 submitted 10 October, 2007;
originally announced October 2007.
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Kondo Effect in Mesoscopic Quantum Dots
Authors:
M. Grobis,
I. G. Rau,
R. M. Potok,
D. Goldhaber-Gordon
Abstract:
A dilute concentration of magnetic impurities can dramatically affect the transport properties of an otherwise pure metal. This phenomenon, known as the Kondo effect, originates from the interactions of individual magnetic impurities with the conduction electrons. Nearly a decade ago, the Kondo effect was observed in a new system, in which the magnetic moment stems from a single unpaired spin in…
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A dilute concentration of magnetic impurities can dramatically affect the transport properties of an otherwise pure metal. This phenomenon, known as the Kondo effect, originates from the interactions of individual magnetic impurities with the conduction electrons. Nearly a decade ago, the Kondo effect was observed in a new system, in which the magnetic moment stems from a single unpaired spin in a lithographically defined quantum dot, or artificial atom. The discovery of the Kondo effect in artificial atoms spurred a revival in the study of Kondo physics, due in part to the unprecedented control of relevant parameters in these systems. In this review we discuss the physics, origins, and phenomenology of the Kondo effect in the context of recent quantum dot experiments.
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Submitted 17 November, 2006;
originally announced November 2006.
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Tuning Negative Differential Resistance in a Molecular Film
Authors:
M. Grobis,
A. Wachowiak,
R. Yamachika,
M. F. Crommie
Abstract:
We have observed tunable negative differential resistance (NDR) in scanning tunneling spectroscopy measurements of a double layer of C60 molecules on a metallic surface. Using a simple model we show that the observed NDR behavior is explained by voltage-dependent changes in the tunneling barrier height.
We have observed tunable negative differential resistance (NDR) in scanning tunneling spectroscopy measurements of a double layer of C60 molecules on a metallic surface. Using a simple model we show that the observed NDR behavior is explained by voltage-dependent changes in the tunneling barrier height.
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Submitted 31 March, 2005;
originally announced March 2005.
