Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity
Authors:
Yana Grishchenko,
Josh Dawson,
Saptarsi Ghosh,
Abhiram Gundimeda,
Bogdan F. Spiridon,
Nivedita L. Raveendran,
Rachel A. Oliver,
Sohini Kar-Narayan,
Yonatan Calahorra
Abstract:
We studied the magnetic properties of ferromagnetic-semiconductor composites based on nickel and porous-GaN, motivated by the effort to couple magnetic and semiconductor functionality. Nickel-infiltrated and nickel-coated (laminated thin-film) porous GaN structures were fabricated by electrodeposition, and their magnetic properties were subsequently examined collectively, by vibrating sample magne…
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We studied the magnetic properties of ferromagnetic-semiconductor composites based on nickel and porous-GaN, motivated by the effort to couple magnetic and semiconductor functionality. Nickel-infiltrated and nickel-coated (laminated thin-film) porous GaN structures were fabricated by electrodeposition, and their magnetic properties were subsequently examined collectively, by vibrating sample magnetometry and on the nanoscale, by magnetic force microscopy. We successfully demonstrated the ability to realize nickel infiltrated porous GaN, where the magnetic properties were dominated by the infiltrated material without a measurable surface contribution. We found that the structure and magnetization of electrodeposited porous-GaN/Ni composites depended on GaN degree of porosity and the amount of deposited nickel. The magnetization evolves from a nearly isotropic response in the infiltrated structures, to a shape-anisotropy controlled magnetic thin-film behaviour. Furthermore, both infiltrated and thin-film nickel electrodeposited on porous GaN were found to have low (< 0.1%) strain and corresponding low coercivity: < 6.4 and < 2.4 kA/m for infiltrated and thin-film, correspondingly. The most likely cause for the lowered strain is increased compliance of the porous GaN compared to bulk. These results encourage deeper investigation of magnetic nanostructure property tuning and of magnetic property coupling to GaN and similar materials.
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Submitted 4 December, 2022; v1 submitted 4 February, 2021;
originally announced February 2021.
Growth of AlGaN under the conditions of significant gallium evaporation: phase separation and enhanced lateral growth
Authors:
I. O. Mayboroda,
A. A. Knizhnik,
Yu. V. Grishchenko,
I. S. Ezubchenko,
Maxim L. Zanaveskin,
M. Yu. Presniakov,
B. V. Potapkin,
V. A. Ilyin
Abstract:
Growth kinetics of AlGaN in NH3 MBE under significant Ga desorption was studied. It was found that the addition of gallium stimulates 2D growth and provides better morphology of films compared to pure AlN. The effect was experimentally observed at up to 98% desorption of the im**ing gallium. We found that, under the conditions of significant thermal desorption, larger amounts of gallium were ret…
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Growth kinetics of AlGaN in NH3 MBE under significant Ga desorption was studied. It was found that the addition of gallium stimulates 2D growth and provides better morphology of films compared to pure AlN. The effect was experimentally observed at up to 98% desorption of the im**ing gallium. We found that, under the conditions of significant thermal desorption, larger amounts of gallium were retained at lateral boundaries of 3D surface features than at flat terraces because of the higher binding energy of Ga atoms at specific surface defects. The selective accumulation of gallium resulted in an increase in lateral growth component through the formation of the Ga-enriched AlGaN phase at boundaries of 3D surface features. We studied temperature dependence of AlGaN growth rate and developed a kinetic model analytically describing this dependence. As the model was in good agreement with the experimental data, we used it to estimate the increase in the binding energy of Ga atoms at surface defects compared to terrace surface cites using data on the Ga content in different AlGaN phases. We also applied first-principles calculations to the thermodynamic analysis of stable configurations on the AlN surface and then used these surface configurations to compare the binding energy of Ga atom at terraces and steps. Both first-principles calculations and analytical estimations of the experimental results gave similar values of difference in binding energies; this value is 0.3 eV.
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Submitted 5 February, 2017;
originally announced February 2017.
